Semiconductor device and method for forming the same
    5.
    发明授权
    Semiconductor device and method for forming the same 有权
    半导体装置及其形成方法

    公开(公告)号:US08750069B2

    公开(公告)日:2014-06-10

    申请号:US14155289

    申请日:2014-01-14

    申请人: SK Hynix Inc.

    发明人: Jung Sam Kim

    摘要: A method for forming a semiconductor device is disclosed. An anti-fuse is formed at a buried bit line such that the area occupied by the anti-fuse is smaller than that of a conventional planar-gate-type anti-fuse, and a breakdown efficiency of an insulation film is increased. This results in an increase in reliability and stability of the semiconductor device. A semiconductor device includes a line pattern formed over a semiconductor substrate, a device isolation film formed at a center part of the line pattern, a contact part formed at both sides of the line pattern, configured to include an oxide film formed over the line pattern, and a bit line formed at a bottom part between the line patterns, and connected to the contact part.

    摘要翻译: 公开了一种用于形成半导体器件的方法。 在掩埋位线处形成反熔丝,使得由反熔丝占据的面积小于常规平面栅型反熔丝的面积,并且提高绝缘膜的击穿效率。 这导致半导体器件的可靠性和稳定性的增加。 半导体器件包括形成在半导体衬底上的线图案,形成在线图案的中心部分处的器件隔离膜,形成在线图案的两侧的接触部分,被配置为包括形成在线图案上的氧化膜 以及形成在线图案之间的底部处并且连接到接触部分的位线。