Abstract:
Provided is an infrared optical sensor including a substrate, a channel layer on the substrate, optical absorption structures dispersed and disposed on the channel layer, and electrodes disposed on the substrate, and disposed on both sides of the channel layer, wherein the channel layer and the optical absorption structures include transition metal dichalcogenides.
Abstract:
The present invention relates to a method of fabricating a nanowire and graphene-sheet hybrid structure, and a transparent electrode employing the same, in which a hybrid structure, in which a graphene sheet is attached on surfaces of nanowires, is fabricated by fabricating a line pattern, in which nanowires are aligned in a longitudinal direction, by using an electro-spinning method, and then additionally employing a dipping method of dipping the line pattern in a graphene sheet dispersed solution, and the fabricated hybrid structure is applied to the transparent electrode. Accordingly, a crosslinking portion is increased by decreasing a distance between nanowires present inside the line pattern to improve a conductive property of a nanowire metal line. Further, the nanowire with a relative uniform density is present within the fabricated line pattern, so that when the line pattern is fabricated on the entire substrate, it is possible to achieve a uniform distribution of nanowires over a large area. Further, the surfaces of the nanowires are covered by the graphene sheet by adopting the dipping process of dipping the nanowire line pattern in a dispersion solution in which the graphene sheet is evenly dispersed, thereby preventing oxidation of the nanowire due to a contact with air during a thermal treatment process.
Abstract:
Disclosed is an optical detector. The optical detector includes: a first dielectric layer; a graphene optical transmission line formed on the first dielectric layer; a graphene optical detector formed on the first dielectric layer and configured to detect light transmitted along the graphene optical transmission line; electric wires formed on the graphene optical detector; metal pads positioned at both ends of the graphene optical detector and connected with the electric wires; and a second dielectric layer formed on the graphene optical transmission line, in which the graphene optical detector detects an intensity of light incident in a horizontal direction with respect to a surface of the graphene optical transmission line.
Abstract:
Provided are a meta-material and a method of fabricating the same. the metal-material may include a substrate, a metal layer on the substrate, and an active gain medium layer on the metal layer. The active gain medium layer and the metal layer may be configured to define hole patterns that may be periodically arranged to have a space smaller than a wavelength of an ultraviolet light, such that the active gain medium layer and the metal layer exhibit a negative refractive index in a wavelength region of the ultraviolet light.
Abstract:
Provided is a temperature-pressure complex sensor with an anti-radiation property including a first sensing material which is a porous conductive film, and second sensing materials which are dispersedly disposed on a surface of the first sensing material. The second sensing materials may include a conductive structure having a two-dimensional crystal structure, and nanoparticles having a radiation shielding property which are disposed between crystal layers of the conductive structure.
Abstract:
Provided herein is a gas sensor that includes a substrate, an insulating layer provided on the substrate, a first active layer disposed on the insulating layer, a second active layer which is disposed on the insulating layer and undergoes heterojunction with a portion of the first active layer, a first electrode and a second electrode which are disposed on the first active layer and are spaced apart from each other at a predetermined interval, and a third electrode and a fourth electrode which are disposed on the second active layer and are spaced apart from each other at a predetermined interval. The first active layer and the second active layer include different materials.
Abstract:
A graphene device is manufactured by forming on a substrate a pattern with a material that contains carbon, and growing graphene on the substrate where the pattern is formed.
Abstract:
Disclosed is a method of manufacturing a junction electronic device by disposing 2-Dimensional (2D) materials at desired positions by chemically exfoliating the 2D materials, and the method includes: forming a pattern by surface-treating a surface of a substrate; transferring a 2D material by spraying a liquid solution, in which 2D material flakes are dissolved, onto the substrate on which the pattern is formed; forming first electrodes at both sides of the 2D material disposed on the substrate; forming a dielectric layer on the first electrodes; and forming a second electrode on the dielectric layer.
Abstract:
A method of transferring graphene is provided. A method of transferring graphene in accordance with an exemplary embodiment of the present invention may include forming a graphene layer by composing graphene and a base layer, depositing a self-assembled monolayer on the graphene layer, and separating a combination layer comprising the self-assembled monolayer and the graphene layer from the base layer.
Abstract:
Provided is a method for fabricating a strain-pressure complex sensor and a sensor fabricated thereby. This method includes coating a fabric with a graphene oxide; reducing the graphene oxide coated with the fabric to form a graphene; disposing carbon nanotubes on the fabric coated with the graphene; and connecting an electrode to the fabric.