公开(公告)号：US4752747A

公开(公告)日：1988-06-21

申请号：US916801

申请日：1986-10-08

申请人： Edoardo Botti ,  Aldo Torazzina ,  Bruno Murari

发明人： Edoardo Botti ,  Aldo Torazzina ,  Bruno Murari

IPC分类号： H03F1/02 ,  H03F3/187 ,  H03F3/30

CPC分类号： H03F1/0222 ,  H03F3/187 ,  H03F3/3081 ,  H03F2200/411 ,  H03F2200/504

摘要： A device for increasing the power output of a low-tension operated amplifier which is connected to a standard impedance loudspeaker and is powered at a voltage level which, in the presence of an audio signal, consists of the DC operating voltage for the set and an overlapping variable voltage which is proportional to the audio signal input to the amplifier.Thus, a high dynamic range is afforded for the output signal from the amplifer directed to the loudspeaker.

摘要翻译： 一种用于增加低压操作放大器的功率输出的装置，其连接到标准阻抗扬声器并且在存在音频信号的情况下由电压的DC工作电压组成的电压电平供电，以及 与输入到放大器的音频信号成比例的重叠可变电压。 因此，提供了高动态范围，用于来自放大器的输出信号指向扬声器。

公开(公告)号：US4682197A

公开(公告)日：1987-07-21

申请号：US812109

申请日：1985-12-23

申请人： Flavio Villa ,  Bruno Murari ,  Franco Bertotti ,  Aldo Torazzina ,  Fabrizio Stefani

发明人： Flavio Villa ,  Bruno Murari ,  Franco Bertotti ,  Aldo Torazzina ,  Fabrizio Stefani

IPC分类号： H01L21/8222 ,  H01L21/331 ,  H01L27/02 ,  H01L27/06 ,  H01L27/082 ,  H01L27/102 ,  H01L29/73 ,  H01L29/72 ,  H01L23/52 ,  H01L27/10 ,  H01L29/08

CPC分类号： H01L27/0211 ,  H01L27/1024

摘要： This integrated semiconductor device aims at drastic reduction of the direct secondary breakdown phenomena and has a plurality of side-by-side elementary transistors forming an interdigited structure. To reduce the thermal interaction between the elementary transistors, the latter are spaced apart from one another by a distance approximately equal to the width of one elementary transistor and are driven by current sources. Spacing apart reduces electrothermal interaction. Further, in order to minimize the device area requirements, the space between any two adjacent elementary transistors is made to accommodate drive transistors operating as current sources, or the elementary transistors of the complementary stage where the device forms a class B output stage, the two output transistors whereof are alternatively switched on.

摘要翻译： 该集成半导体器件旨在大大减少直接二次击穿现象，并且具有形成交叉结构的多个并排基本晶体管。 为了减小基本晶体管之间的热相互作用，后者彼此间隔开大约等于一个基本晶体管的宽度的距离，并由电流源驱动。 间距减少电热相互作用。 此外，为了最小化器件面积要求，使任何两个相邻基本晶体管之间的空间适合作为电流源工作的驱动晶体管，或者是器件形成B类输出级的补充级的基本晶体管， 输出晶体管交替接通。

公开(公告)号：US5101170A

公开(公告)日：1992-03-31

申请号：US602106

申请日：1990-10-22

申请人： Aldo Torazzina ,  Bruno Murari

发明人： Aldo Torazzina ,  Bruno Murari

IPC分类号： H03F1/02 ,  H03G3/20 ,  H03G3/30

CPC分类号： H03G3/3026 ,  H03F1/0277 ,  H03F2200/468

摘要： A first non-inverting amplifier unit and a second inverting amplifier unit are driven by a single input signal; their outputs are connected across a load, directly and via a series capacitor, respectively. A circuit disables the second amplifier when the input signal is lower than a preset threshold level.

公开(公告)号：US07463454B2

公开(公告)日：2008-12-09

申请号：US11818659

申请日：2007-06-14

申请人： Ubaldo Mastromatteo ,  Bruno Murari ,  Paolo Ferrari ,  Simone Sassolini

发明人： Ubaldo Mastromatteo ,  Bruno Murari ,  Paolo Ferrari ,  Simone Sassolini

IPC分类号： G11B5/56

CPC分类号： B81B3/0021 ,  H02N1/006

摘要： A micro-electro-mechanical device formed by a body of semiconductor material having a thickness and defining a mobile part and a fixed part. The mobile part is formed by a mobile platform, supporting arms extending from the mobile platform to the fixed part, and by mobile electrodes fixed to the mobile platform. The fixed part has fixed electrodes facing the mobile electrodes, a first biasing region fixed to the fixed electrodes, a second biasing region fixed to the supporting arms, and an insulation region of insulating material extending through the entire thickness of the body. The insulation region insulates electrically at least one between the first and the second biasing regions from the rest of the fixed part.

摘要翻译： 由具有厚度并限定可移动部分和固定部分的半导体材料体形成的微电子机械装置。 可移动部分由移动平台，从移动平台延伸到固定部分的支撑臂，以及固定到移动平台的移动电极形成。 固定部分具有面向移动电极的固定电极，固定到固定电极的第一偏置区域，固定到支撑臂的第二偏压区域以及延伸穿过主体整个厚度的绝缘材料的绝缘区域。 绝缘区域在第一和第二偏压区域之间至少一个与固定部件的其余部分绝缘。

公开(公告)号：US07208339B2

公开(公告)日：2007-04-24

申请号：US11063483

申请日：2005-02-22

申请人： Bruno Murari ,  Ubaldo Mastromatteo ,  Paolo Ferrari

发明人： Bruno Murari ,  Ubaldo Mastromatteo ,  Paolo Ferrari

IPC分类号： H01L21/00

CPC分类号： G02B27/0994

摘要： A micromachined device made of semiconductor material is formed by: a semiconductor body; an intermediate layer set on top of the semiconductor body; and a substrate, set on top of the intermediate layer. A cavity extends in the intermediate layer and is delimited laterally by bottom fixed regions, at the top by the substrate, and at the bottom by the semiconductor body. The bottom fixed regions form fixed electrodes, which extend in the intermediate layer towards the inside of the cavity. An oscillating element is formed in the substrate above the cavity and is separated from top fixed regions through trenches, which extend throughout the thickness of the substrate. The oscillating element is formed by an oscillating platform set above the cavity, and by mobile electrodes, which extend towards the top fixed regions in a staggered way with respect to the fixed electrodes. The fixed electrodes and mobile electrodes are thus comb-fingered in plan view but formed on different levels.

摘要翻译： 由半导体材料制成的微机械加工装置由半导体本体形成， 设置在半导体本体顶部的中间层; 以及设置在中间层顶部的基板。 空腔在中间层中延伸并且由底部固定区域在顶部限定，在顶部由衬底限定，并且在底部由半导体本体限定。 底部固定区域形成固定电极，其在中间层中延伸到空腔的内部。 振荡元件形成在空腔上方的衬底中，并且通过沟槽与顶部固定区域分离，其延伸贯穿衬底的厚度。 振荡元件由设置在空腔上方的振荡平台和通过相对于固定电极以交错方式朝着顶部固定区域延伸的移动电极形成。 因此，固定电极和移动电极在平面图中梳理，但形成在不同的水平上。

公开(公告)号：US06529140B1

公开(公告)日：2003-03-04

申请号：US09085887

申请日：1998-05-27

申请人： Herbert Sax ,  Bruno Murari ,  Flavio Villa ,  Benedetto Vigna ,  Paolo Ferrari

发明人： Herbert Sax ,  Bruno Murari ,  Flavio Villa ,  Benedetto Vigna ,  Paolo Ferrari

IPC分类号： G08C1906

CPC分类号： G01V3/081 ,  G01D5/145

摘要： A bi-dimensional position sensor that can be advantageously used in the turn system controlled from the steering wheel of a vehicle. The sensor includes a permanent magnet fixed to a control lever so as to move in a plane along first and second directions and to rotate about a third direction orthogonal to the preceding ones. The permanent magnet is movable with respect to an integrated device including a first group of sensor elements arranged spaced along the first direction, a second group of sensor elements arranged spaced along the second direction and a third group of sensor elements detecting the angular position of the permanent magnet. Electronics integrated with the sensor elements generate a code associated with each position which the permanent magnet may assume and generate a control signal corresponding to the desired function.

摘要翻译： 一种二维位置传感器，其可以有利地用于从车辆的方向盘控制的转向系统中。 传感器包括固定到控制杆的永久磁铁，以沿着第一和第二方向在平面内移动并围绕与前述正交的第三方向旋转。 永磁体可相对于包括沿着第一方向间隔布置的第一组传感器元件的集成装置移动，第二组传感器元件沿着第二方向间隔布置，第三组传感器元件检测第二组传感器元件的角位置 永久磁铁 与传感器元件集成的电子产生与永磁体可以采取的每个位置相关联的代码，并产生对应于期望功能的控制信号。

公开(公告)号：US06496997B1

公开(公告)日：2002-12-24

申请号：US09357441

申请日：1999-07-20

申请人： Bruno Murari ,  Benedetto Vigna ,  Paolo Ferrari

发明人： Bruno Murari ,  Benedetto Vigna ,  Paolo Ferrari

IPC分类号： B08B700

CPC分类号： H02N1/004 ,  G11B21/02

摘要： An electrostatic cleaning structure of a hard disk driver is formed by a plurality of concentric conductive regions to which biasing pulse trains are supplied. Each biased conductive region generates an electric field attracting any dielectric particle. The pulse trains supplied to immediately adjacent conductive regions are phase-shifted by a predetermined time and in a direction linked to a desired direction of removal for the electrostatic particles. Voltage pulses sent to each conductive region are delayed with respect to voltage pulses sent to an immediately preceding conductive region in the direction of desired removal, and are advanced with respect the voltage pulses sent to an immediately successive conductive region.

摘要翻译： 硬盘驱动器的静电清洁结构由供给偏压脉冲串的多个同心导电区域形成。 每个偏置的导电区域产生吸引任何电介质颗粒的电场。 提供给紧邻的导电区域的脉冲串相对于静电颗粒的期望的去除方向相互偏移预定的时间。 发送到每个导电区域的电压脉冲相对于在所需去除方向上发送到紧邻在前的导电区域的电压脉冲而被延迟，并且相对于发送到紧邻的导电区域的电压脉冲前进。

公开(公告)号：US06487000B2

公开(公告)日：2002-11-26

申请号：US09925847

申请日：2001-08-08

申请人： Ubaldo Mastromatteo ,  Bruno Murari

发明人： Ubaldo Mastromatteo ,  Bruno Murari

IPC分类号： G02B2600

CPC分类号： H02N1/004 ,  B81B3/0051 ,  B81B2201/045 ,  B81B2203/051 ,  B81B2203/058 ,  F16H21/02 ,  G02B26/0841 ,  G02B26/0866

摘要： A microelectromechanical structure, usable in an optical switch for directing a light beam towards one of two light guide elements, including: a mirror element, rotatably movable; an actuator, which can translate; and a motion conversion assembly, arranged between the mirror element and the actuator. The motion conversion assembly includes a projection integral with the mirror element and elastic engagement elements integral with the actuator and elastically loaded towards the projection. The elastic engagement elements are formed by metal plates fixed to the actuator at one of their ends and engaging the projection with an abutting edge countershaped with respect to the projection.

摘要翻译： 一种微机电结构，可用于将光束引向两个光导元件中的一个的光学开关中，包括：反射镜元件，可旋转地移动; 可以翻译的执行器; 以及布置在镜元件和致动器之间的运动转换组件。 运动转换组件包括与镜子元件一体的突起和与致动器成一体的弹性接合元件，并朝向突起弹性加载。 弹性接合元件由金属板形成，金属板在它们的一端固定到致动器，并且与突起接合，并且相对于突起相对地配置有邻接边缘。

公开(公告)号：US06423938B1

公开(公告)日：2002-07-23

申请号：US09662984

申请日：2000-09-15

申请人： Bruno Murari ,  Ubaldo Mastromatteo ,  Benedetto Vigna

发明人： Bruno Murari ,  Ubaldo Mastromatteo ,  Benedetto Vigna

IPC分类号： H05B100

CPC分类号： H01L24/81 ,  H01L23/345 ,  H01L24/98 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16148 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81234 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2224/05599

摘要： A method for the electrical and/or mechanical interconnection of components of a microelectronic system includes at least one first component and at least one second component to be connected, and at least one local Joule-effect micro-heater is incorporated in one of the first and second components at a respective soldering point therebetween. The method includes supplying electrical energy to the micro-heater to utilize the heat produced therefrom by the Joule effect to solder the first and second components at the respective soldering point.

摘要翻译： 用于微电子系统的部件的电和/或机械互连的方法包括至少一个第一部件和要连接的至少一个第二部件，并且至少一个局部焦耳效应微加热器被并入第一部件 和在它们之间的相应焊接点处的第二部件。 该方法包括向微加热器提供电能以利用焦耳效应产生的热量来在相应焊接点处焊接第一和第二部件。

公开(公告)号：USRE36472E

公开(公告)日：1999-12-28

申请号：US405435

申请日：1995-03-16

申请人： Sandro Storti ,  Bruno Murari ,  Franco Consiglieri

发明人： Sandro Storti ,  Bruno Murari ,  Franco Consiglieri

IPC分类号： H02H9/04 ,  H02H11/00 ,  H02P7/00 ,  H02H3/18

CPC分类号： H02H11/002 ,  H02P7/04 ,  H02H9/047

摘要： The additional voltage drop across a guard diode against supply polarity inversion in an integrated bridge circuit for driving an external load and employing two high-side NPN power switches driven by two PNP transistors, all monolithically integrated using a junction-type isolation technique, is substantially eliminated by connecting the emitters of the two PNP drive transistors directly to the positive rail, i.e. to the anode of the guard diode. Integrated PNP transistors are per se intrinsically protected against polarity inversion and when so connected permit to reduce the overall voltage drop across the driving bridge circuit. Using a Zener diode as the guard diode and a second Zener diode connected in opposition to the first Zener between the cathode thereof and the negative supply rail an additional spike protection of the circuit's components is implemented.

摘要翻译： 在用于驱动外部负载的集成电路电路中的保护二极管附近的额外电压降与采用由两个PNP晶体管驱动的两个高侧NPN功率开关的所有单极集成的结合型隔离技术基本相同 通过将两个PNP驱动晶体管的发射极直接连接到正轨，即保护二极管的阳极来消除。 集成的PNP晶体管本质上保护不受极性反转，当连接时允许减小驱动桥电路两端的整体电压降。 使用齐纳二极管作为保护二极管，以及在其阴极和负电源导轨之间与第一齐纳二极管相对的第二齐纳二极管，实现电路部件的附加尖峰保护。