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37 条记录 (耗时 0.027 秒)

    Dithiobenzoate 4,5-dicyano-1,3-(dithiolidene-2-yl)methylene
    4.
    发明授权
    Dithiobenzoate 4,5-dicyano-1,3-(dithiolidene-2-yl)methylene 失效
    二硫代苯甲酸酯4,5-二氰基-1,3-（二亚硫基亚基-2-基）亚甲基

    公开(公告)号：US4312991A

    公开(公告)日：1982-01-26

    申请号：US38050

    申请日：1979-05-10

    申请人： Edward M. Engler ,  Vishnubhai V. Patel ,  Robert R. Schumaker

    发明人： Edward M. Engler ,  Vishnubhai V. Patel ,  Robert R. Schumaker

    IPC分类号： C07D339/06 ,  C07D339/08 ,  C07D345/00 ,  C07D409/04 ,  C07D409/14 ,  C07D495/04

    CPC分类号： C07D345/00 ,  C07D339/08 ,  C07D495/04

    摘要： The invention is directed to novel heterofulvalene geminal dithiolate compounds and their selenium and tellurium analogs having the general formula ##STR1## Wherein X is selected from S, Se and Te. R is selected from hydrogen, alkyl, aryl, or together form a ring of carbon atoms, cyano and dithiocarbonate groups and R.sup.1 is selected from alkali, alkaline earth and transition metals, alkyl, aryl, cyclic and heterocyclic groups.A novel method for preparing these compounds is also provided.

    摘要翻译： 本发明涉及新颖的异源异戊二烯双硫醇化合物及其具有通式为“IMAGE”的硒和碲类似物，其中X选自S，Se和Te。 R选自氢，烷基，芳基或一起形成碳原子的环，氰基和二硫代碳酸酯基，R 1选自碱金属，碱土金属和过渡金属，烷基，芳基，环状和杂环基。 还提供了一种制备这些化合物的新方法。

    Tetraselenofulvalene, dithiodiselenofulvalene and the TCNQ salts thereof
    5.
    发明授权
    Tetraselenofulvalene, dithiodiselenofulvalene and the TCNQ salts thereof 失效
    四硫代富瓦烯，二硫代硒代富瓦烯及其TCNQ盐

    公开(公告)号：US4028346A

    公开(公告)日：1977-06-07

    申请号：US477553

    申请日：1974-06-10

    申请人： Edward M. Engler ,  Vishnubhai V. Patel

    发明人： Edward M. Engler ,  Vishnubhai V. Patel

    IPC分类号： C07D339/06 ,  C07D343/00 ,  C07D345/00 ,  H01B1/12 ,  C07D421/04

    CPC分类号： C07D345/00 ,  C07D343/00

    摘要： Organic molecules can be coupled via their selenocarbonyl derivatives. Generally, the synthesis can be described by the following reaction equation: ##STR1## where C can be a cyclic or heterocyclic organic compound and R can be alkoxy, phenoxy or phenyl, preferably CH.sub.3 O, C.sub.2 H.sub.5 O, C.sub.6 H.sub.5 O, C.sub.6 H.sub.5 and the like. The reaction is usually carried out in a refluxing solvent, the choice of the solvent being determined by the stability and by the ease of coupling of a particular substrate. Groups that tend to stabilize the selenocarbonyl require higher boiling solvents and longer refluxing times. Aromatic solvents, such as benzene or toluene are well-suited for the coupling reaction. In some cases, refluxing the substrate in the alkoxy-phosphorus base as solvent may be advantageous. This new coupling procedure permits the synthesis of the hitherto unknown compounds: tetraselenofulvalene (TSeF), the selenium analogue of tetrathiofulvalene (TTF), and diselenodithiofulvalene (DSeDTF). Highly conducting charge transfer salts of tetraselenofulvalene and diselenodithiofulvalene with tetracyano-p-quinodimethane have also been prepared. The materials of this invention are useful in the organic electronic devices described in copending application Ser. no. 450,541 to Arieh Aviram et al. and assigned to the same assignee as is the present application.

    摘要翻译： 有机分子可以通过其硒羰基衍生物偶联。 通常，合成可以通过以下反应式描述：

    Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the same
    9.
    发明授权
    Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the same 有权
    具有改善SiCOH电介质界面强度的结构及其制备方法

    公开(公告)号：US07067437B2

    公开(公告)日：2006-06-27

    申请号：US10662022

    申请日：2003-09-12

    申请人： Daniel C. Edelstein ,  Alfred Grill ,  Vishnubhai V. Patel ,  Darryl D. Restaino

    发明人： Daniel C. Edelstein ,  Alfred Grill ,  Vishnubhai V. Patel ,  Darryl D. Restaino

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834

    摘要： A semiconductor device structure and method for manufacture includes a substrate having a top first layer; a second thin transition layer located on top of the first layer; and, a third layer located on top of the transition layer, wherein the second thin transition layer provides strong adhesion and cohesive strength between the first and third layers of the structure. Additionally, a semiconductor device structure and method for manufacture includes an insulating structure comprising a multitude of dielectric and conductive layers with respective transition bonding layers disposed to enhance interfacial strength among the different layers. Further, an electronic device structure incorporates layers of insulating and conductive materials as intralevel or interlevel dielectrics in a back-end-of-the-line (“BEOL”) wiring structure in which the interfacial strength between different pairs of dielectric films is enhanced by a thin intermediate transition bonding layer.

    摘要翻译： 半导体器件结构和制造方法包括具有顶部第一层的衬底; 位于所述第一层顶部的第二薄过渡层; 以及位于所述过渡层顶部的第三层，其中所述第二薄过渡层在所述结构的所述第一和第三层之间提供强粘合力和内聚强度。 此外，半导体器件结构和制造方法包括绝缘结构，其包括多个介电层和导电层，其中设置有各自的过渡键合层以增强不同层之间的界面强度。 此外，电子器件结构包括绝缘和导电材料层，作为后端线（“BEOL”）布线结构中的层间或层间电介质，其中不同对的介电膜之间的界面强度由 薄的中间过渡粘合层。