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    POLISHING AGENT AND METHOD FOR POLISHING SUBSTRATE USING THE POLSHING AGENT
    6.
    发明申请
    POLISHING AGENT AND METHOD FOR POLISHING SUBSTRATE USING THE POLSHING AGENT 有权
    抛光剂和使用抛光剂抛光底物的方法

    公开(公告)号：US20110039475A1

    公开(公告)日：2011-02-17

    申请号：US12988898

    申请日：2009-04-22

    申请人： Yousuke Hoshi ,  Daisuke Ryuzaki ,  Naoyuki Koyama ,  Shigeru Nobe

    发明人： Yousuke Hoshi ,  Daisuke Ryuzaki ,  Naoyuki Koyama ,  Shigeru Nobe

    IPC分类号： B24B29/00 ,  C09K3/14

    CPC分类号： C09G1/02 ,  B24B37/044 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/76224

    摘要： Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.

    摘要翻译： 公开了一种抛光剂，其包括：水; 四价金属氢氧化物颗粒; 和添加剂，其中所述添加剂含有阳离子聚合物和阳离子多糖中的至少一种。 本发明可以提供一种抛光剂，其能够在平坦化绝缘膜的CMP技术中以高速抛光较少的抛光缺陷并且具有高的氧化硅膜和阻挡膜的抛光速率比的抛光剂 。 本发明还可以提供用于储存抛光剂的抛光剂组，以及使用该研磨剂研磨基材的方法。

    Polishing slurry for CMP and polishing method
    10.
    发明申请
    Polishing slurry for CMP and polishing method 审中-公开
    抛光浆料用于CMP和抛光方法

    公开(公告)号：US20070117394A1

    公开(公告)日：2007-05-24

    申请号：US11545787

    申请日：2006-10-11

    申请人： Takashi Shinoda ,  Shigeru Nobe ,  Takafumi Sakurada ,  Yoshikazu Oomori ,  Tadahiro Kimura

    发明人： Takashi Shinoda ,  Shigeru Nobe ,  Takafumi Sakurada ,  Yoshikazu Oomori ,  Tadahiro Kimura

    IPC分类号： H01L21/66 ,  H01L21/461

    CPC分类号： C09G1/02 ,  C23F3/04 ,  H01L21/30625 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/7684 ,  H01L21/76865

    摘要： The invention provides polishing slurry for CMP for suppressing corrosion of wiring lines of a conductive substance, or for suppressing bimetallic corrosion of a barrier conductor and conductive substance, by suppressing electrons from being transferred at near the boundaries between a barrier conductor and a conductive substance such as copper. The invention provides polishing slurry for CMP for polishing at least a conductor layer and a conductive substance layer in contact with the conductor layer, wherein the absolute value of the potential difference between the conductive substance and the conductor at 50±5° C. is 0.25 V or less in the polishing slurry when a positive electrode and a negative electrode of a potentiometer are connected to the conductive substance and the conductor, respectively. The polishing slurry for CMP preferably comprises at least one compound selected from heterocyclic compounds containing any one of hydroxyl group, carbonyl group, carboxyl group, amino group, amide group and sulfinyl group, and containing at least one of nitrogen and sulfur atoms.

    摘要翻译： 本发明提供了通过抑制电子在阻挡导体和导电物质之间的边界附近转移而抑制导电物质的布线的腐蚀或抑制阻挡导体和导电物质的双金属腐蚀的CMP抛光浆料，例如 作为铜。 本发明提供了用于CMP的抛光浆料，用于至少对与导体层接触的导体层和导电物质层进行抛光，其中在50±5℃下导电物质与导体之间的电位差的绝对值为0.25 当电位计的正电极和负电极分别连接到导电物质和导体时，抛光浆料中的V或更小。 用于CMP的抛光浆料优选包含至少一种选自含有羟基，羰基，羧基，氨基，酰胺基和亚磺酰基中的任何一种的杂环化合物并且含有氮和硫原子中的至少一个的化合物。