摘要:
A pair of edges that are located at ends as viewed in the widthwise direction of a design pattern are recognized. On the basis of the edge direction in which the paired edges are recognized, edge points on the design pattern are detected as sub-pixels. The widthwise dimension of the design pattern is calculated on the basis of the edge points. In addition, the widthwise dimension of a circuit pattern is calculated at the same position as the widthwise dimension of the design pattern. On the basis of the calculated widthwise dimensions, the semiconductor wafer circuit pattern is checked.
摘要:
According to one embodiment, a pattern characteristic detection apparatus for a photomask includes a detection-data creating portion, a reference-data creating portion, an extracting portion, a first area-setting portion, a detecting portion and an collecting portion. The detection-data creating portion is configured to create detection data on the basis of an optical image of a pattern formed on a photomask. The reference-data creating portion is configured to create reference data of the pattern. The extracting portion is configured to extract a pattern for pattern characteristic detection and positional information of the extracted pattern. The first area-setting portion is configured to set an area where pattern characteristics are to be detected, and configured to extract a target pattern. The detecting portion is configured to detect pattern characteristics of the target pattern within the area. In addition, the collecting portion is configured to collect the detected pattern characteristics.
摘要:
According to one embodiment, a pattern characteristic detection apparatus for a photomask includes a detection-data creating portion, a reference-data creating portion, an extracting portion, a first area-setting portion, a detecting portion and an collecting portion. The detection-data creating portion is configured to create detection data on the basis of an optical image of a pattern formed on a photomask. The reference-data creating portion is configured to create reference data of the pattern. The extracting portion is configured to extract a pattern for pattern characteristic detection and positional information of the extracted pattern. The first area-setting portion is configured to set an area where pattern characteristics are to be detected, and configured to extract a target pattern. The detecting portion is configured to detect pattern characteristics of the target pattern within the area. In addition, the collecting portion is configured to collect the detected pattern characteristics.
摘要:
A pair of edges that are located at ends as viewed in the widthwise direction of a design pattern are recognized. On the basis of the edge direction in which the paired edges are recognized, edge points on the design pattern are detected as sub-pixels. The widthwise dimension of the design pattern is calculated on the basis of the edge points. In addition, the widthwise dimension of a circuit pattern is calculated at the same position as the widthwise dimension of the design pattern. On the basis of the calculated widthwise dimensions, the semiconductor wafer circuit pattern is checked.
摘要:
A method and system for imaging an object to be inspected and obtaining an optical image; creating a reference image from design pattern data; preparing an inspection recipe including one or more templates and parameter settings necessary for the inspection; checking the pattern and the template against each other, and selecting the reference image which corresponds to the template; detecting first and second edges in the selected reference image in accordance with the parameter setting using determined coordinates as a reference; detecting first and second edges in the optical image, this optical image corresponds to the selected reference image; and determining an inspection value by acquiring the difference between the line width of the optical image and the reference image using the first edge and second edge of the reference image and the first edge and second edges of the optical image.
摘要:
A method and system for imaging an object to be inspected and obtaining an optical image; creating a reference image from design pattern data; preparing an inspection recipe including one or more templates and parameter settings necessary for the inspection; checking the pattern and the template against each other, and selecting the reference image which corresponds to the template; detecting first and second edges in the selected reference image in accordance with the parameter setting using determined coordinates as a reference; detecting first and second edges in the optical image, this optical image corresponds to the selected reference image; and determining an inspection value by acquiring the difference between the line width of the optical image and the reference image using the first edge and second edge of the reference image and the first edge and second edges of the optical image.
摘要:
A pair of edges that are located at ends as viewed in the widthwise direction of a design pattern are recognized. On the basis of the edge direction in which the paired edges are recognized, edge points on the design pattern are detected as sub-pixels. The widthwise dimension of the design pattern is calculated on the basis of the edge points. In addition, the widthwise dimension of a circuit pattern is calculated at the same position as the widthwise dimension of the design pattern. On the basis of the calculated widthwise dimensions, the semiconductor wafer circuit pattern is checked.
摘要:
The difference data between the real patter data Sij, and a 5×5 window with a noticed pixel in the center and the design pattern data Rij obtained by the design pattern data of the window being shifted in a plurality of directions with respect to the design pattern data Rij is found by a shift direction operation section, and the design pattern data in the direction in which the total of the pixels is minimum is selected from the difference data by a selection section, the difference between the central pixels Sij, Qij of the selected design pattern data and the central pixels Sij, Qij of the windows of the real pattern data is found by a difference operation section, and the difference and a threshold are compared in a defect judgement section, and thereby the pattern inspection of the object is carried out.
摘要:
Developing roller comprising a conductive mandrel with at least an elastic conductive base layer and a charge providing layer. The base layer is located closer to the mandrel than the charge providing layer. The base layer is roughened before the charge providing layer is applied to the base layer.
摘要:
Urea and thiourea derivatives inhibit cell function of the chemokine receptor CCR-3. These compounds offer an effective means for treating a range of diseases thought to be mediated by the CCR-3 receptor. A variety of useful urea and thiourea derivatives can be synthesized using liquid and solid phase synthesis protocols.