公开(公告)号：US07157781B2

公开(公告)日：2007-01-02

申请号：US10425663

申请日：2003-04-30

申请人： Eishi Kawasaki ,  Hisanori Yokura ,  Kazuhiko Sugiura

发明人： Eishi Kawasaki ,  Hisanori Yokura ,  Kazuhiko Sugiura

IPC分类号： H01L29/84 ,  H01L21/00

CPC分类号： B81C1/00047 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2203/0145 ,  B81C2203/019 ,  G01L9/0042 ,  G01P15/0802 ,  G01P15/125

摘要： A semiconductor device having a membrane includes a semiconductor substrate, which has an active surface, and a membrane. A cavity is located between the active surface and the membrane and hermetically sealed. The membrane includes a first film, which has a through hole that extends through the first film, and a second film, which has been formed by reflowing a reflow layer made of a material that becomes viscous and reflows when heated. The through hole has been plugged by the second film.

摘要翻译： 具有膜的半导体器件包括具有活性表面的半导体衬底和膜。 空腔位于活性表面和膜之间并进行密封。 膜包括具有延伸穿过第一膜的通孔的第一膜和通过回流由加热时粘稠并回流的材料制成的回流层而形成的第二膜。 通孔已被第二个胶片堵住。

公开(公告)号：US20080202249A1

公开(公告)日：2008-08-28

申请号：US12010758

申请日：2008-01-29

申请人： Hisanori Yokura ,  Yoshihiko Isobe ,  Eishi Kawasaki

发明人： Hisanori Yokura ,  Yoshihiko Isobe ,  Eishi Kawasaki

IPC分类号： G01L9/04 ,  H01C17/28

CPC分类号： G01L9/0055 ,  G01K5/52 ,  G01L1/2293 ,  H01L2224/02166 ,  Y10T29/49103

摘要： A semiconductor pressure sensing apparatus includes a metallic stem having a diaphragm and a semiconductor sensor bonded to the diaphragm. The semiconductor sensor includes a gauge section and first and second bonding pads. The gauge section is configured to be deformed according to a deformation of the diaphragm. The first and second bonding pads are respectively connected to different positions of the gauge section so that an electrical resistance between the first and second bonding pads can change with a change in the deformation of the diaphragm. The gauge section is formed to a semiconductor layer of an silicon-on-insulator substrate. The semiconductor sensor is directly bonded to the diaphragm by activating contact surfaces between the semiconductor sensor and the diaphragm.

摘要翻译： 一种半导体压力感测装置，包括具有隔膜的金属杆和结合到隔膜的半导体传感器。 半导体传感器包括测量部分和第一和第二接合焊盘。 仪表部分被配置为根据隔膜的变形而变形。 第一和第二接合焊盘分别连接到量规部分的不同位置，使得第一和第二接合焊盘之间的电阻随着隔膜变形的改变而改变。 测量部分形成为绝缘体上硅衬底的半导体层。 通过激活半导体传感器和隔膜之间的接触表面，半导体传感器直接接合到隔膜。

公开(公告)号：US07644623B2

公开(公告)日：2010-01-12

申请号：US12010758

申请日：2008-01-29

申请人： Hisanori Yokura ,  Yoshihiko Isobe ,  Eishi Kawasaki

发明人： Hisanori Yokura ,  Yoshihiko Isobe ,  Eishi Kawasaki

IPC分类号： G01L9/04

CPC分类号： G01L9/0055 ,  G01K5/52 ,  G01L1/2293 ,  H01L2224/02166 ,  Y10T29/49103

摘要： A semiconductor pressure sensing apparatus includes a metallic stem having a diaphragm and a semiconductor sensor bonded to the diaphragm. The semiconductor sensor includes a gauge section and first and second bonding pads. The gauge section is configured to be deformed according to a deformation of the diaphragm. The first and second bonding pads are respectively connected to different positions of the gauge section so that an electrical resistance between the first and second bonding pads can change with a change in the deformation of the diaphragm. The gauge section is formed to a semiconductor layer of an silicon-on-insulator substrate. The semiconductor sensor is directly bonded to the diaphragm by activating contact surfaces between the semiconductor sensor and the diaphragm.

摘要翻译： 一种半导体压力感测装置，包括具有隔膜的金属杆和结合到隔膜的半导体传感器。 半导体传感器包括测量部分和第一和第二接合焊盘。 仪表部分被配置为根据隔膜的变形而变形。 第一和第二接合焊盘分别连接到量规部分的不同位置，使得第一和第二接合焊盘之间的电阻随着隔膜变形的改变而改变。 测量部分形成为绝缘体上硅衬底的半导体层。 通过激活半导体传感器和隔膜之间的接触表面，半导体传感器直接接合到隔膜。

公开(公告)号：US07821085B2

公开(公告)日：2010-10-26

申请号：US12385848

申请日：2009-04-21

申请人： Shigenori Suzuki ,  Hisanori Yokura ,  Kenichi Yokoyama ,  Tetsuo Fujii ,  Kazuhiko Sugiura

发明人： Shigenori Suzuki ,  Hisanori Yokura ,  Kenichi Yokoyama ,  Tetsuo Fujii ,  Kazuhiko Sugiura

IPC分类号： H01L27/14 ,  H01L29/82 ,  H01L29/84

CPC分类号： B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C2203/0118 ,  G01C19/56 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semiconductor layer, and has a P conductive type; and multiple electrodes, which are separated from each other. The first support substrate, the first insulation film and the first semiconductor layer have the P conductive type. The physical quantity is detected based on a capacitance between the plurality of electrodes, and the electrodes are disposed in the first semiconductor layer.

摘要翻译： 物理量传感器包括：传感器基板，其包括依次堆叠的第一支撑基板，第一绝缘膜和第一半导体层; 盖基板，包括设置在第一半导体层上的第二支撑基板，并具有P导电型; 以及彼此分离的多个电极。 第一支撑基板，第一绝缘膜和第一半导体层具有P导电型。 基于多个电极之间的电容来检测物理量，并且电极设置在第一半导体层中。

公开(公告)号：US20100155865A1

公开(公告)日：2010-06-24

申请号：US12654002

申请日：2009-12-08

申请人： Kazuhiko Sugiura ,  Tetsuo Fujii ,  Hisanori Yokura

发明人： Kazuhiko Sugiura ,  Tetsuo Fujii ,  Hisanori Yokura

IPC分类号： H01L29/84 ,  H01L21/78

CPC分类号： B81C1/00134 ,  B81B2207/095 ,  B81C1/00269 ,  B81C1/00301 ,  H01L2224/48463 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105

摘要： A semiconductor device includes a sensor portion, a cap portion, and an ion-implanted layer. The sensor portion has a sensor structure at a surface portion of a surface. The cap portion has first and second surfaces opposite to each other and includes a through electrode. The surface of the sensor portion is joined to the first surface of the cap portion such that the sensor structure is sealed between the sensor portion and the cap portion. The ion-implanted layer is located on the second surface of the cap portion. The through electrode extends from the first surface to the second surface and is exposed through the ion-implanted layer.

摘要翻译： 半导体器件包括传感器部分，帽部分和离子注入层。 传感器部分在表面的表面部分具有传感器结构。 盖部具有彼此相对的第一和第二表面，并且包括通孔。 传感器部分的表面与盖部分的第一表面接合，使得传感器结构被密封在传感器部分和盖部分之间。 离子注入层位于帽部的第二表面上。 通孔从第一表面延伸到第二表面，并通过离子注入层暴露。

公开(公告)号：US20090261430A1

公开(公告)日：2009-10-22

申请号：US12385848

申请日：2009-04-21

申请人： Shigenori Suzuki ,  Hisanori Yokura ,  Kenichi Yokoyama ,  Tetsuo Fujii ,  Kazuhiko Sugiura

发明人： Shigenori Suzuki ,  Hisanori Yokura ,  Kenichi Yokoyama ,  Tetsuo Fujii ,  Kazuhiko Sugiura

IPC分类号： H01L29/84 ,  H01L21/30

CPC分类号： B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C2203/0118 ,  G01C19/56 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semiconductor layer, and has a P conductive type; and multiple electrodes, which are separated from each other. The first support substrate, the first insulation film and the first semiconductor layer have the P conductive type. The physical quantity is detected based on a capacitance between the plurality of electrodes, and the electrodes are disposed in the first semiconductor layer.

摘要翻译： 物理量传感器包括：传感器基板，其包括依次堆叠的第一支撑基板，第一绝缘膜和第一半导体层; 盖基板，包括设置在第一半导体层上的第二支撑基板，并具有P导电型; 以及彼此分离的多个电极。 第一支撑基板，第一绝缘膜和第一半导体层具有P导电型。 基于多个电极之间的电容来检测物理量，并且电极设置在第一半导体层中。

公开(公告)号：US20120049381A1

公开(公告)日：2012-03-01

申请号：US13287188

申请日：2011-11-02

申请人： Tetsuo FUJII ,  Akitoshi Yamanaka ,  Hisanori Yokura

发明人： Tetsuo FUJII ,  Akitoshi Yamanaka ,  Hisanori Yokura

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： G01P15/125 ,  B81B7/007 ,  B81B2207/097 ,  G01C19/5719 ,  G01C19/5783 ,  G01P15/0802 ,  G01P2015/0814 ,  H01L23/481 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/16 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13009 ,  H01L2224/13011 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/2518 ,  H01L2224/45144 ,  H01L2224/48 ,  H01L2224/48463 ,  H01L2224/80001 ,  H01L2224/81805 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10157 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.

摘要翻译： 半导体器件包括：传感器，包括在传感器的第一侧上的传感器结构和围绕传感器结构的外围元件; 以及盖，其覆盖所述传感器结构并具有结合到所述传感器的第一侧的第二侧。 盖包括在盖的第二面上的第一布线层。 第一布线层跨越周边元件。 传感器还包括传感器侧连接部分，盖子还包括帽侧连接部分。 传感器侧连接部分接合到盖侧连接部分。 传感器侧连接部和盖侧连接部中的至少一方提供共晶合金，使得传感器侧连接部和盖侧连接部彼此接合。

公开(公告)号：US07387024B2

公开(公告)日：2008-06-17

申请号：US11061448

申请日：2005-02-22

申请人： Toshikazu Itakura ,  Hisanori Yokura

发明人： Toshikazu Itakura ,  Hisanori Yokura

IPC分类号： G01N27/22 ,  G01R27/26

CPC分类号： G01N27/223

摘要： A capacitive type humidity sensor includes: a semiconductor substrate; a plurality of humidity devices having a capacitance variable in accordance with a humidity; a standard capacitance device having a standard capacitance, a capacitance change of which in accordance with the humidity is smaller than that of the capacitance of each humidity device; and a CV converter circuit for converting a capacitance difference between the capacitance of each humidity device and the standard capacitance of the standard capacitance device to a signal voltage. The humidity devices, the standard capacitance device and the CV converter circuit are disposed on one side of the substrate.

摘要翻译： 电容式湿度传感器包括：半导体衬底; 多个湿度装置，其具有根据湿度可变的电容; 具有标准电容的标准电容器件，根据湿度的电容变化小于每个湿度器件的电容的电容值; 以及用于将每个湿度装置的电容和标准电容装置的标准电容之间的电容差转换为信号电压的CV转换器电路。 湿度装置，标准电容装置和CV转换器电路设置在基板的一侧。

公开(公告)号：US07154094B2

公开(公告)日：2006-12-26

申请号：US11007277

申请日：2004-12-09

申请人： Hisanori Yokura ,  Takahiko Yoshida

发明人： Hisanori Yokura ,  Takahiko Yoshida

IPC分类号： G01J5/02

CPC分类号： G01J3/26 ,  G02B26/001

摘要： A Fabri-Perot filter includes: a substrate; a first mirror disposed on the substrate; and a movable mirror unit facing the first mirror with a gap therebetween. The movable mirror unit is movable toward the first mirror in a case where a predetermined voltage is applied between the first mirror and the movable mirror unit so that the gap is changeable. The filter is capable of transmitting an infrared light having a predetermined wavelength corresponding to the gap. The movable mirror unit includes a center portion and a periphery portion, which is deformable easier than the center portion.

摘要翻译： Fabri-Perot过滤器包括：基底; 设置在基板上的第一反射镜; 以及面对第一反射镜的可移动镜单元，其间具有间隙。 在第一反射镜和可动反射镜单元之间施加预定电压使得间隙可变的情况下，可动镜单元可朝向第一反射镜移动。 滤光器能够传输具有与间隙对应的预定波长的红外光。 可动镜单元包括中心部分和周边部分，其比中心部分易变形。

公开(公告)号：US08497557B2

公开(公告)日：2013-07-30

申请号：US12754036

申请日：2010-04-05

申请人： Masaya Tanaka ,  Tetsuo Fujii ,  Hisanori Yokura

发明人： Masaya Tanaka ,  Tetsuo Fujii ,  Hisanori Yokura

IPC分类号： H01L29/84

CPC分类号： B81B7/0041 ,  B81C2203/019 ,  H01L23/3121 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, and a sealing member. The first semiconductor substrate has a surface and includes a sensing portion on the surface side. The sensing portion has a movable portion. The first semiconductor substrate and the second semiconductor substrate are bonded together to form a stacked substrate. The stacked substrate defines a hermetically sealed space for accommodating the sensing portion between the first and second semiconductor substrates. The stacked substrate further defines a recess extending between the first semiconductor substrate and the second semiconductor substrate to penetrate an interface between the first semiconductor substrate and the second semiconductor substrate. The sealing member is located in the recess.

摘要翻译： 半导体器件包括第一半导体衬底，第二半导体衬底和密封构件。 第一半导体衬底具有表面并且在表面侧包括感测部分。 感测部分具有可移动部分。 将第一半导体衬底和第二半导体衬底接合在一起以形成堆叠衬底。 堆叠的衬底限定用于在第一和第二半导体衬底之间容纳感测部分的气密密封空间。 堆叠的衬底还限定了在第一半导体衬底和第二半导体衬底之间延伸的凹部，以穿透第一半导体衬底和第二半导体衬底之间的界面。 密封件位于凹槽中。