公开(公告)号：US07611966B2

公开(公告)日：2009-11-03

申请号：US11123675

申请日：2005-05-05

申请人： Eric J. Li ,  Sergei L. Voronov ,  Christopher L. Rumer

发明人： Eric J. Li ,  Sergei L. Voronov ,  Christopher L. Rumer

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/0622 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/268

摘要： A method is described for laser scribing or dicing portions of a workpiece using multi-source laser systems. In one embodiment, a first laser melts portions of the workpiece prior to a second laser ablating the portions of the workpiece.

摘要翻译： 描述了使用多源激光系统的工件的激光划线或切割部分的方法。 在一个实施例中，在第二激光烧蚀工件的部分之前，第一激光熔化部分工件。

公开(公告)号：US07169687B2

公开(公告)日：2007-01-30

申请号：US10980943

申请日：2004-11-03

申请人： Eric J. Li ,  Sergei L. Voronov ,  Christopher L. Rumer

发明人： Eric J. Li ,  Sergei L. Voronov ,  Christopher L. Rumer

IPC分类号： H01L21/00

CPC分类号： B23K26/0624 ,  B23K26/0622 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50

摘要： A method is described for laser scribing or dicing portions of a workpiece using multi-source laser systems. In one embodiment, a first laser uses multiphoton absorption to lower the ablation threshold of portions of the workpiece prior to a second laser ablating the portions of the workpiece. In an alternative embodiment, a first laser uses high energy single-photon absorption to lower the ablation threshold of portions of the workpiece prior to a second laser ablating the portions of the workpiece.

摘要翻译： 描述了使用多源激光系统的工件的激光划线或切割部分的方法。 在一个实施例中，第一激光器在第二激光烧蚀工件的部分之前，使用多光子吸收来降低部分工件的消融阈值。 在替代实施例中，第一激光器在第二激光烧蚀工件的部分之前使用高能单光子吸收来降低部分工件的消融阈值。

公开(公告)号：US07897486B2

公开(公告)日：2011-03-01

申请号：US11801465

申请日：2007-05-09

申请人： Eric J. Li ,  Daoqiang Lu ,  Christopher L. Rumer ,  Paul A. Koning ,  Darcy E. Fleming ,  Gudbjorg H. Oskarsdottir ,  Tiffany Byrne

发明人： Eric J. Li ,  Daoqiang Lu ,  Christopher L. Rumer ,  Paul A. Koning ,  Darcy E. Fleming ,  Gudbjorg H. Oskarsdottir ,  Tiffany Byrne

IPC分类号： H01L21/00

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L24/10 ,  H01L24/13 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1181 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/81011 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Formulations and processes for forming wafer coat layers are disclosed. In one embodiment, an organic surface protectant is incorporated into a wafer coat formulation deposited onto a semiconductor wafer prior to the laser scribe operation. Upon removal of the wafer coat layer, the organic surface protectant remains on the bumps and thereby prevents oxidation of the bumps between die prep and chip and attach. In an alternative embodiment, an ultraviolet light absorber is added to the wafer coat formulation to enhance the wafer coat layer's energy absorption and thereby improve the laser's ability to ablate the wafer coat layer. In an alternative embodiment, a conformal wafer coat layer is deposited on the wafer and die bumps, thereby reducing wafer coat layer thickness variations that can impact the laser scribing ability.

摘要翻译： 公开了用于形成晶片涂层的制剂和方法。 在一个实施方案中，在激光划线操作之前，将有机表面保护剂并入沉积到半导体晶片上的晶片涂层制剂中。 在去除晶片涂层时，有机表面保护剂保留在凸块上，从而防止芯片准备和芯片之间的凸起的氧化附着。 在替代实施例中，将紫外光吸收剂添加到晶片涂层配方中以增强晶片涂层的能量吸收，从而提高激光器烧蚀晶片涂层的能力。 在替代实施例中，保形晶片涂层沉积在晶片和模具凸起上，从而减少可能影响激光划线能力的晶片涂层厚度变化。

公开(公告)号：US08193072B2

公开(公告)日：2012-06-05

申请号：US12938281

申请日：2010-11-02

申请人： Eric J. Li ,  Daoqiang Lu ,  Christopher L. Rumer ,  Paul A. Koning ,  Darcy E. Fleming ,  Gudbjorg H. Oskarsdottir ,  Tiffany Byrne

发明人： Eric J. Li ,  Daoqiang Lu ,  Christopher L. Rumer ,  Paul A. Koning ,  Darcy E. Fleming ,  Gudbjorg H. Oskarsdottir ,  Tiffany Byrne

IPC分类号： H01L21/78

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L24/10 ,  H01L24/13 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1181 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/81011 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Formulations and processes for forming wafer coat layers are disclosed. In one embodiment, an organic surface protectant is incorporated into a wafer coat formulation deposited onto a semiconductor wafer prior to the laser scribe operation. Upon removal of the wafer coat layer, the organic surface protectant remains on the bumps and thereby prevents oxidation of the bumps between die prep and chip and attach. In an alternative embodiment, an ultraviolet light absorber is added to the wafer coat formulation to enhance the wafer coat layer's energy absorption and thereby improve the laser's ability to ablate the wafer coat layer. In an alternative embodiment, a conformal wafer coat layer is deposited on the wafer and die bumps, thereby reducing wafer coat layer thickness variations that can impact the laser scribing ability.

摘要翻译： 公开了用于形成晶片涂层的制剂和方法。 在一个实施方案中，在激光划线操作之前，将有机表面保护剂并入沉积到半导体晶片上的晶片涂层制剂中。 在去除晶片涂层时，有机表面保护剂保留在凸块上，从而防止芯片准备和芯片之间的凸起的氧化附着。 在替代实施例中，将紫外光吸收剂添加到晶片涂层配方中以增强晶片涂层的能量吸收，从而提高激光器烧蚀晶片涂层的能力。 在替代实施例中，保形晶片涂层沉积在晶片和模具凸起上，从而减少可能影响激光划线能力的晶片涂层厚度变化。

公开(公告)号：US20110059596A1

公开(公告)日：2011-03-10

申请号：US12938281

申请日：2010-11-02

申请人： Eric J. Li ,  Daoqiang Lu ,  Christopher L. Rumer ,  Paul A. Koning ,  Darcy E. Fleming ,  Gudbjorg H. Oskarsdottir ,  Tiffany Byrne

发明人： Eric J. Li ,  Daoqiang Lu ,  Christopher L. Rumer ,  Paul A. Koning ,  Darcy E. Fleming ,  Gudbjorg H. Oskarsdottir ,  Tiffany Byrne

IPC分类号： H01L21/78

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L24/10 ,  H01L24/13 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1181 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/81011 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Formulations and processes for forming wafer coat layers are disclosed. In one embodiment, an organic surface protectant is incorporated into a wafer coat formulation deposited onto a semiconductor wafer prior to the laser scribe operation. Upon removal of the wafer coat layer, the organic surface protectant remains on the bumps and thereby prevents oxidation of the bumps between die prep and chip and attach. In an alternative embodiment, an ultraviolet light absorber is added to the wafer coat formulation to enhance the wafer coat layer's energy absorption and thereby improve the laser's ability to ablate the wafer coat layer. In an alternative embodiment, a conformal wafer coat layer is deposited on the wafer and die bumps, thereby reducing wafer coat layer thickness variations that can impact the laser scribing ability.

摘要翻译： 公开了用于形成晶片涂层的制剂和方法。 在一个实施方案中，在激光划线操作之前，将有机表面保护剂并入沉积到半导体晶片上的晶片涂层制剂中。 在去除晶片涂层时，有机表面保护剂保留在凸块上，从而防止芯片准备和芯片之间的凸起的氧化附着。 在替代实施例中，将紫外光吸收剂添加到晶片涂层配方中以增强晶片涂层的能量吸收，从而提高激光器烧蚀晶片涂层的能力。 在替代实施例中，保形晶片涂层沉积在晶片和模具凸起上，从而减少可能影响激光划线能力的晶片涂层厚度变化。

公开(公告)号：US07279362B2

公开(公告)日：2007-10-09

申请号：US11097424

申请日：2005-03-31

申请人： Eric J. Li ,  Daoqiang Lu ,  Christopher L. Rumer ,  Paul A. Koning ,  Darcy E. Fleming ,  Gudbjorg H. Oskarsdottir ,  Tiffany Byrne

发明人： Eric J. Li ,  Daoqiang Lu ,  Christopher L. Rumer ,  Paul A. Koning ,  Darcy E. Fleming ,  Gudbjorg H. Oskarsdottir ,  Tiffany Byrne

IPC分类号： H01L21/00

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L24/10 ,  H01L24/13 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1181 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/81011 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Formulations and processes for forming wafer coat layers are disclosed. In one embodiment, an organic surface protectant is incorporated into a wafer coat formulation deposited onto a semiconductor wafer prior to the laser scribe operation. Upon removal of the wafer coat layer, the organic surface protectant remains on the bumps and thereby prevents oxidation of the bumps between die prep and chip and attach. In an alternative embodiment, an ultraviolet light absorber is added to the wafer coat formulation to enhance the wafer coat layer's energy absorption and thereby improve the laser's ability to ablate the wafer coat layer. In an alternative embodiment, a conformal wafer coat layer is deposited on the wafer and die bumps, thereby reducing wafer coat layer thickness variations that can impact the laser scribing ability.

公开(公告)号：US20130295763A1

公开(公告)日：2013-11-07

申请号：US13997992

申请日：2011-09-29

申请人： Eric J. Li

发明人： Eric J. Li

IPC分类号： H01L21/768

CPC分类号： H01L21/67132 ,  B32B43/006 ,  H01L21/67115 ,  H01L21/6836 ,  H01L21/76838 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381

摘要： Vacuum processing, such as a backside metallization (BSM) deposition, is performed on a taped wafer after a gas escape path is formed between a base film of the tape and the wafer frontside surface following backgrind. Venting provided by the gas escape path reduces formation of bubbles under the tape. The gas escape path may be provided, for example, by a selective pre-curing of tape adhesive, to breach an edge seal and place the wafer frontside surface internal to the edge seal in fluid communication with an environment external to the edge seal. With the thinned wafer supported by the pre-cured tape, BSM is then deposited while the wafer and tape are cooled, for example, via a cooled electrostatic chuck.

摘要翻译： 在带状基膜和背面研磨后的晶片正面之间形成气体逸出路径之后，在带状晶片上进行真空处理，例如背面金属化（BSM）沉积。 通过气体逸出路径提供的排气减少了胶带下面的气泡的形成。 气体逸出路径可以例如通过带式粘合剂的选择性预固化来提供，以破坏边缘密封并且将边缘密封件内部的晶片前侧表面与边缘密封件外部的环境流体连通。 利用由预固化带支撑的薄化晶片，然后在晶片和带被冷却时，例如经由冷却的静电卡盘沉积BSM。

公开(公告)号：US09390968B2

公开(公告)日：2016-07-12

申请号：US13997992

申请日：2011-09-29

申请人： Eric J. Li

发明人： Eric J. Li

IPC分类号： H01L21/768 ,  H01L21/683

CPC分类号： H01L21/67132 ,  B32B43/006 ,  H01L21/67115 ,  H01L21/6836 ,  H01L21/76838 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381

摘要： Vacuum processing, such as a backside metallization (BSM) deposition, is performed on a taped wafer after a gas escape path is formed between a base film of the tape and the wafer frontside surface following backgrind. Venting provided by the gas escape path reduces formation of bubbles under the tape. The gas escape path may be provided, for example, by a selective pre-curing of tape adhesive, to breach an edge seal and place the wafer frontside surface internal to the edge seal in fluid communication with an environment external to the edge seal. With the thinned wafer supported by the pre-cured tape, BSM is then deposited while the wafer and tape are cooled, for example, via a cooled electrostatic chuck.

摘要翻译： 在带状基膜和背面研磨后的晶片正面之间形成气体逸出路径之后，在带状晶片上进行真空处理，例如背面金属化（BSM）沉积。 通过气体逸出路径提供的排气减少了胶带下面的气泡的形成。 气体逸出路径可以例如通过带式粘合剂的选择性预固化来提供，以破坏边缘密封并且将边缘密封件内部的晶片前侧表面与边缘密封件外部的环境流体连通。 利用由预固化带支撑的薄化晶片，然后在晶片和带被冷却时，例如经由冷却的静电卡盘沉积BSM。

公开(公告)号：US09123732B2

公开(公告)日：2015-09-01

申请号：US13631612

申请日：2012-09-28

申请人： Sandeep B. Sane ,  Shankar Ganapathysubramanian ,  Jorge Sanchez ,  Leonel R. Arana ,  Eric J. Li ,  Nitin A. Deshpande ,  Jiraporn Seangatith ,  Poh Chieh Benny Poon

发明人： Sandeep B. Sane ,  Shankar Ganapathysubramanian ,  Jorge Sanchez ,  Leonel R. Arana ,  Eric J. Li ,  Nitin A. Deshpande ,  Jiraporn Seangatith ,  Poh Chieh Benny Poon

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00

CPC分类号： H01L24/32 ,  H01L23/562 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/89 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/3213 ,  H01L2224/32225 ,  H01L2224/32501 ,  H01L2224/32505 ,  H01L2224/73253 ,  H01L2224/81007 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/161 ,  H01L2924/16251 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/014

摘要： Die warpage is controlled for the assembly of thin dies. In one example, a device having a substrate on a back side and components in front side layers is formed. A backside layer is formed over the substrate, the layer resisting warpage of the device when the device is heated. The device is attached to a substrate by heating.

摘要翻译： 控制模具翘曲，用于组装薄模具。 在一个示例中，形成具有背面上的基板和在前侧层中的部件的装置。 背衬层形成在衬底上，该层在加热器件时抵抗器件翘曲。 该装置通过加热连接到基板。

公开(公告)号：US20080230911A1

公开(公告)日：2008-09-25

申请号：US11726284

申请日：2007-03-21

申请人： Eric J. Li

发明人： Eric J. Li

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L21/268 ,  H01L23/485 ,  H01L24/27 ,  H01L24/29 ,  H01L24/31 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/274 ,  H01L2224/83191 ,  H01L2224/83801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253

摘要： A semiconducting structure includes a thinned silicon substrate (110), a silicide layer (120) over the thinned silicon substrate, a metal layer (130) over the silicide layer, a solder interface layer (140) over the metal layer, and a cap layer (150) over the solder interface layer. The thinned silicon substrate is no thicker than approximately 500 micrometers. The silicide layer is formed using a rapid thermal processing procedure that locally heats the interface between the metal layer and the silicon substrate but causes no more than negligible thermal impact to other areas of the silicon wafer.

摘要翻译： 半导体结构包括薄化的硅衬底（110），薄化硅衬底上的硅化物层（120），硅化物层上的金属层（130），金属层上的焊料界面层（140）和帽 层（150）在焊料界面层上。 薄的硅衬底不超过约500微米。 使用快速热处理程序形成硅化物层，该方法局部加热金属层和硅衬底之间的界面，但是对硅晶片的其它区域造成不可忽视的热冲击。