公开(公告)号：US20240280362A1

公开(公告)日：2024-08-22

申请号：US18610609

申请日：2024-03-20

Applicant: FUJIFILM Corporation

Inventor： Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Kei YAMAMOTO ,  Satomi TAKAHASHI

IPC: G01B21/10 ,  G03F7/004 ,  G03F7/32

CPC classification number: G01B21/10 ,  G03F7/0045 ,  G03F7/325

Abstract: The present invention provides a method for testing a photosensitive composition and a method for producing a photosensitive composition that can easily test whether or not the photosensitive composition exhibits a predetermined LWR. The method for testing a photosensitive composition has a step 1 of using a reference photosensitive composition including an acid decomposable resin having a group that is decomposed by an action of an acid to generate a polar group and a photoacid generator, to form a resist film on a substrate, exposing the resist film, using a developer to perform a development treatment to form a resist pattern, and obtaining any one reference data selected from the group consisting of a line width or a space width of a line-shaped resist pattern, an opening diameter of an opening portion in the resist pattern, and a dot diameter of a dot-like resist pattern; a step 2 of using a photosensitive composition for measurement including components of the same types as types of components included in the reference photosensitive composition, to form a resist film on a substrate, exposing the resist film, using a developer to perform a development treatment to form a resist pattern, and obtaining measurement data of the resist pattern; and a step 3 of performing comparison between the reference data and the measurement data to determine whether or not an allowable range is satisfied, wherein the developer is an organic solvent-based developer including an aliphatic hydrocarbon solvent, an aromatic hydrocarbon, and at least one metal atom selected from the group consisting of Al, Fe, and Ni, and a mass ratio of a content of the aromatic hydrocarbon to a content of the metal atom in the developer is 5.0×104 to 2.0×1010.

公开(公告)号：US20230221644A1

公开(公告)日：2023-07-13

申请号：US18176150

申请日：2023-02-28

Applicant: FUJIFILM Corporation

Inventor： Naohiro TANGO ,  Kei YAMAMOTO

IPC: G03F7/11 ,  C08F220/28 ,  C08F220/38 ,  C08F220/24

CPC classification number: G03F7/11 ,  C08F220/24 ,  C08F220/281 ,  C08F220/282 ,  C08F220/387

Abstract: A method for producing a composition for forming a non-photosensitive upper layer film that is disposed on a workpiece and a photosensitive resist film, the production method includes cleaning a production device for a composition XA for forming a non-photosensitive upper layer film with a cleaning liquid to clean the production device until a concentration of a resin included in the cleaning liquid reaches 10 ppm by mass or less, discharging the cleaning liquid from the production device, and producing the composition XA for forming a non-photosensitive upper layer film using the production device. The cleaning, the discharging, and the producing are performed in this order.

公开(公告)号：US20210286263A1

公开(公告)日：2021-09-16

申请号：US17320364

申请日：2021-05-14

Applicant: FUJIFILM Corporation

Inventor： Naohiro TANGO ,  Masafumi KOJIMA ,  Minoru UEMURA ,  Akiyoshi GOTO ,  Michihiro SHIRAKAWA ,  Kei YAMAMOTO

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/039 ,  G03F7/20

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a resin A having polarity that increases by an action of an acid; one or more resins B selected from the group consisting of a resin B1 including a fluorine atom and having polarity that increases by the action of an acid, a resin B2 including a fluorine atom and having polarity that increases by the action of an alkali, and a resin B3 including a fluorine atom and having polarity that increases by any of an action of an acid and an action of an alkali; and a compound that generates an acid upon irradiation with actinic rays or radiation, in which the compound that generates an acid upon irradiation with actinic rays or radiation includes one or more selected from the group consisting of a compound (I) to a compound (III), provided that the resin B1 to the resin B3 include no repeating unit including an ion-bonding group.

公开(公告)号：US20170351179A1

公开(公告)日：2017-12-07

申请号：US15685630

申请日：2017-08-24

Applicant: FUJIFILM Corporation

Inventor： Akiyoshi GOTO ,  Naoki INOUE ,  Naohiro TANGO ,  Kei YAMAMOTO ,  Michihiro SHIRAKAWA

IPC: G03F7/11 ,  G03F7/16 ,  C09D133/10 ,  C09D133/14 ,  G03F7/32 ,  G03F7/20

Abstract: Provided are a composition for forming an upper layer film for a photoresist, including a polymer having a molecular weight distribution in which a peak area of a high-molecular-weight component having a weight-average molecular weight of 40,000 or more accounts for 0.1% or less with respect to the entire peak area in the molecular weight distribution, measured by the gel permeation chromatography.

公开(公告)号：US20140308605A1

公开(公告)日：2014-10-16

申请号：US14315661

申请日：2014-06-26

Applicant: FUJIFILM Corporation

Inventor： Junichi ITO ,  Hidenori TAKAHASHI ,  Shuhei YAMAGUCHI ,  Kei YAMAMOTO

IPC: G03F7/038

CPC classification number: G03F7/0388 ,  C08F220/18 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  H01L21/0274

Abstract: There is provided a pattern forming method comprising (i) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a resin capable of increasing the polarity by the action of an acid to decrease the solubility for an organic solvent-containing developer, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a solvent, and (D) a resin substantially free from a fluorine atom and a silicon atom and different from the resin (A), (ii) a step of exposing the film, and (iii) a step of performing development by using an organic solvent-containing developer to form a negative pattern.

Abstract translation: 提供了一种图案形成方法，其包括（i）通过使用光化学射线敏感或辐射敏感性树脂组合物形成膜的步骤，所述树脂组合物含有（A）能够通过酸的作用增加极性的树脂，以减少 对于含有机溶剂的显影剂的溶解度，（B）在用光化学射线或辐射照射时能够产生酸的化合物，（C）溶剂，（D）基本上不含氟原子和硅原子的树脂 并且不同于树脂（A），（ii）曝光膜的步骤，和（iii）通过使用含有机溶剂的显影剂进行显影以形成负图案的步骤。

公开(公告)号：US20220107561A1

公开(公告)日：2022-04-07

申请号：US17548595

申请日：2021-12-13

Applicant: FUJIFILM Corporation

Inventor： Keiyu OU ,  Naohiro TANGO ,  Kei YAMAMOTO ,  Kazuhiro MARUMO

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  C08F220/18 ,  C08F220/28 ,  C07C381/12 ,  C07C311/51 ,  C07C311/09 ,  C07C309/17 ,  C07D333/46 ,  C07D327/06 ,  C07C309/42 ,  C07C311/48 ,  C07D333/76 ,  C07D327/08

Abstract: A method for producing an actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention is a method for producing an actinic ray-sensitive or radiation-sensitive resin composition including at least a resin having a polarity that increases due to decomposition by the action of an acid, a compound that generates an acid upon irradiation with actinic rays or radiation, and a solvent, in which the compound that generates an acid upon irradiation with actinic rays or radiation includes one or more compounds selected from the group consisting of a compound (I) to (III) below, and the actinic ray-sensitive or radiation-sensitive resin composition is produced by mixing a first solution including the resin having a polarity that increases by the action of an acid and a first solvent with the one or more compounds selected from the group consisting of the compound (I) to (III).

公开(公告)号：US20210200097A1

公开(公告)日：2021-07-01

申请号：US17178218

申请日：2021-02-17

Applicant: FUJIFILM Corporation

Inventor： Hideaki TSUBAKI ,  Toru TSUCHIHASHI ,  Wataru NIHASHI ,  Kei YAMAMOTO

IPC: G03F7/32 ,  G03F7/075 ,  G03F7/095 ,  G03F7/039 ,  G03F7/004 ,  G03F7/11 ,  G03F7/038 ,  H01L21/304 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/40

Abstract: An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern and the occurrence of omission failure in a resist C/H pattern.
The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having an SP value of 16.3 MPa1/2 or less and a second organic solvent having an SP value of 17.1 MPa1/2 or more.

公开(公告)号：US20180217503A1

公开(公告)日：2018-08-02

申请号：US15937876

申请日：2018-03-28

Applicant: FUJIFILM Corporation

Inventor： Hideaki TSUBAKI ,  Toru TSUCHIHASHI ,  Wataru NIHASHI ,  Kei YAMAMOTO

IPC: G03F7/32 ,  G03F7/16 ,  G03F7/20 ,  G03F7/40 ,  H01L21/304 ,  G03F7/038 ,  G03F7/039 ,  G03F7/38

CPC classification number: G03F7/32 ,  G03F7/0043 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/095 ,  G03F7/11 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40 ,  H01L21/304

Abstract: An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern and the occurrence of omission failure in a resist C/H pattern.The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having an SP value of 16.3 MPa1/2 or less and a second organic solvent having an SP value of 17.1 MPa1/2 or more.

公开(公告)号：US20170199461A1

公开(公告)日：2017-07-13

申请号：US15470113

申请日：2017-03-27

Applicant: FUJIFILM Corporation

Inventor： Kei YAMAMOTO ,  Naohiro TANGO ,  Naoki INOUE ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO

IPC: G03F7/11 ,  G03F7/16 ,  G03F7/32 ,  C08F220/18 ,  C08F220/28 ,  H01L21/027 ,  G03F7/20 ,  G03F7/38 ,  G03F7/40 ,  G03F7/039 ,  G03F7/038 ,  G03F7/004 ,  G03F7/09

Abstract: The present invention has an object to provide a pattern forming method capable of providing good DOF and EL, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a hydrophobic resin.

公开(公告)号：US20160266488A1

公开(公告)日：2016-09-15

申请号：US15158848

申请日：2016-05-19

Applicant: FUJIFILM Corporation

Inventor： Masafumi KOJIMA ,  Akiyoshi GOTO ,  Akinori SHIBUYA ,  Keita KATO ,  Kei YAMAMOTO

IPC: G03F7/038 ,  G03F7/32 ,  G03F7/20

CPC classification number: G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/11 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (P) having a partial structure represented by General Formula (X), and a compound capable of generating an acid upon irradiation with actinic ray or radiation.

Abstract translation: 该活性光敏性或辐射敏感性树脂组合物含有：具有由通式（X）表示的部分结构的树脂（P）; 以及当用活性光或辐射照射时产生酸的化合物。