公开(公告)号：US11603457B2

公开(公告)日：2023-03-14

申请号：US16777160

申请日：2020-01-30

Applicant: FUJIFILM Corporation

Inventor： Masashi Ono ,  Masahiro Takata ,  Takeharu Tani

IPC: C08L33/10 ,  C08F2/50 ,  C08F20/06 ,  C08K5/57

Abstract: Provided is a curable composition including oxide particles that include at least indium and tin, and to which a ligand having a hydrocarbon group and a binding site to the oxide particles is bonded; and a polymerizable compound, in which a content of the oxide particles in the composition is 18 mass % or more with respect to a total solid content of the composition; and a cured product of the curable composition or a lens unit including the cured product.

公开(公告)号：US09673048B2

公开(公告)日：2017-06-06

申请号：US14571293

申请日：2014-12-16

Applicant: FUJIFILM CORPORATION

Inventor： Masashi Ono ,  Masahiro Takata ,  Toshiya Ideue ,  Atsushi Tanaka ,  Masayuki Suzuki

IPC: H01L27/12 ,  H01L29/66 ,  H01L31/032 ,  H01L21/02 ,  H01L29/26 ,  H01L29/786 ,  H01L27/146 ,  G01N23/04 ,  G01T1/24

CPC classification number: H01L21/02628 ,  G01N23/04 ,  G01T1/24 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L27/1225 ,  H01L27/1292 ,  H01L27/14632 ,  H01L27/14676 ,  H01L29/263 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L31/032

Abstract: A method of producing a thin film transistor includes: forming a gate electrode; forming a gate insulating film that contacts the gate electrode; forming, by a liquid phase method, an oxide semiconductor layer arranged facing the gate electrode with the gate insulating film provided therebetween, the oxide semiconductor layer including a first region and a second region, the first region being represented by In(a)Ga(b)Zn(c)O(d), the second region being represented by In(e)Ga(f)Zn(g)O(h), and the second region being located farther from the gate electrode than the first region; and forming a source electrode and a drain electrode that are arranged apart from each other and are capable of being conductively connected through the oxide semiconductor layer.

公开(公告)号：US09236454B2

公开(公告)日：2016-01-12

申请号：US13963061

申请日：2013-08-09

Applicant: FUJIFILM Corporation

Inventor： Masashi Ono ,  Masahiro Takata ,  Atsushi Tanaka ,  Masayuki Suzuki

IPC: H01L29/10 ,  H01L29/66 ,  H01L21/02 ,  H01L27/146 ,  H01L29/786 ,  C23C14/08 ,  C23C14/34 ,  C23C14/58 ,  G02F1/1333 ,  G02F1/1368

CPC classification number: H01L29/66969 ,  C23C14/08 ,  C23C14/3464 ,  C23C14/5806 ,  C23C14/5853 ,  G02F1/133305 ,  G02F2001/13685 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/14612 ,  H01L27/14658 ,  H01L27/14692 ,  H01L29/78693

Abstract: A method of fabricating a thin-film transistor, the method including: film-forming an active layer, that contains as a main component thereof an oxide semiconductor structured by O and at least two elements among In, Ga and Zn, in a film formation chamber into which at least oxygen is introduced, and b) heat treating the active layer at less than 300° C. in a dry atmosphere, wherein the film-forming a) and the heat treating are carried out such that, given that an oxygen partial pressure with respect to an entire pressure of an atmosphere within the film formation chamber in the film-forming is PO2depo (%), and an oxygen partial pressure with respect to an entire pressure of an atmosphere during the heat treating is PO2anneal (%), the oxygen partial pressure PO2anneal (%) at the time of the heat treating b) satisfies a relationship: −20/3PO2depo+40/3≦PO2anneal≦−800/43PO2depo+5900/43.

Abstract translation: 一种制造薄膜晶体管的方法，所述方法包括：成膜有源层，其以膜形成方式包含由O构成的氧化物半导体和In，Ga和Zn中的至少两种元素作为其主要成分 至少引入氧的室，以及b）在干燥气氛中在低于300℃下热处理活性层，其中成膜a）和热处理进行，使得如果氧气 相对于膜成膜室内的气氛的全部压力，成膜时的分压为PO2depo（％），相对于热处理时的气氛的整个压力的氧分压为PO 2·去甲（％） ，热处理时的氧分压PO2nneal（％）b）满足关系：-20 / 3PO2depo + 40/3＆nlE; PO2anneal＆NlE; -800 / 43PO2depo + 5900/43。

公开(公告)号：US09171942B2

公开(公告)日：2015-10-27

申请号：US14158461

申请日：2014-01-17

Applicant: FUJIFILM Corporation

Inventor： Fumihiko Mochizuki ,  Masahiro Takata ,  Masashi Ono ,  Atsushi Tanaka ,  Masayuki Suzuki

IPC: H01L21/31 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L27/146 ,  H01L21/02 ,  H01L27/148 ,  H01L27/32

CPC classification number: H01L29/66969 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/14614 ,  H01L27/14632 ,  H01L27/14659 ,  H01L27/14687 ,  H01L27/148 ,  H01L27/3262 ,  H01L29/7869

Abstract: There is provided a method of manufacturing a semiconductor element including: forming a semiconductor film of which a principal constituent is an oxide semiconductor; forming a first insulation film on a surface of the semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a second insulation film on a surface of the first insulation film, wherein a thickness of the first insulation film and a temperature of the heat treatment in the third step are adjusted such that, if the thickness of the first insulation film is represented by Z (nm), the heat treatment temperature is represented by T (° C.) and a diffusion distance of oxygen into the first insulation film and the semiconductor film is represented by L (nm), the relational expression 0

Abstract translation: 提供一种制造半导体元件的方法，包括：形成主要成分为氧化物半导体的半导体膜; 在所述半导体膜的表面上形成第一绝缘膜; 在氧化气氛中进行热处理; 以及在所述第一绝缘膜的表面上形成第二绝缘膜，其中调整所述第一绝缘膜的厚度和所述第三步骤中的热处理温度，使得如果所述第一绝缘膜的厚度被表示 通过Z（nm），热处理温度由T（℃）表示，并且氧进入第一绝缘膜的扩散距离，半导体膜由L（nm）表示，关系式0

公开(公告)号：US11107885B2

公开(公告)日：2021-08-31

申请号：US15850637

申请日：2017-12-21

Applicant: FUJIFILM Corporation

Inventor： Masashi Ono ,  Makoto Kikuchi ,  Atsushi Tanaka ,  Masayuki Suzuki ,  Yoshihiko Kanemitsu

IPC: H01L31/0352 ,  H01L29/24 ,  H01L33/26 ,  H01L29/786 ,  H01L33/06 ,  H01L29/06 ,  H01L31/0392 ,  H01L31/072 ,  B82Y30/00 ,  B82Y10/00 ,  H01L29/12 ,  H01L31/032 ,  H01L51/50

Abstract: A semiconductor film includes a cluster of semiconductor quantum dots each having a metal atom and ligands coordinating to respective semiconductor quantum dots, and the semiconductor quantum dots have an average shortest inter-dot distance of less than 0.45 nm. A solar cell, a light-emitting diode, a thin film transistor, and an electronic device include the semiconductor film.

公开(公告)号：US10465111B2

公开(公告)日：2019-11-05

申请号：US16409883

申请日：2019-05-13

Applicant: FUJIFILM Corporation

Inventor： Masashi Ono ,  Tsutomu Sasaki

IPC: C09K11/70 ,  C09K11/02 ,  B82Y40/00 ,  B82Y20/00

Abstract: An object of the present invention is to provide a core shell particle having high luminous efficacy and a narrow emission half-width; a method of producing the same; and a film formed of the core shell particle. The core shell particle of the present invention includes: a core which contains a Group III element and a Group V element; a first shell which covers at least a part of a surface of the core; a second shell which covers at least a part of the first shell; and a coordination molecule in at least a part of an outermost surface, in which at least oxygen is detected by X-ray photoelectron spectroscopy analysis, and a molar ratio of the oxygen to the Group III element contained in the core, which is acquired by X-ray photoelectron spectroscopy analysis, is 6.1 or less.

公开(公告)号：US11136497B2

公开(公告)日：2021-10-05

申请号：US15812413

申请日：2017-11-14

Applicant: FUJIFILM Corporation

Inventor： Masashi Ono

IPC: C09K11/08 ,  C09K11/56 ,  C09K11/02 ,  B82Y40/00 ,  C09K11/54 ,  C09K11/62 ,  C09K11/70 ,  H01L33/04 ,  H01L51/00 ,  B82Y20/00 ,  B82Y30/00 ,  H01L51/50

Abstract: An object of the present invention is to provide a multicore shell particle having excellent photostability; a nanoparticle dispersion liquid containing the multicore shell particle; and a film obtained by using the multicore shell particle. A multicore shell particle of the present invention includes a plurality of semiconductor cores; and a semiconductor shell A which contains the plurality of semiconductor cores.

公开(公告)号：US11072872B2

公开(公告)日：2021-07-27

申请号：US15976382

申请日：2018-05-10

Applicant: FUJIFILM Corporation

Inventor： Masashi Ono

IPC: C30B29/60 ,  C01G15/00 ,  C09K11/08 ,  B82Y40/00 ,  C09K11/70 ,  B82Y20/00 ,  C09K11/02 ,  C09K11/88 ,  C30B7/00 ,  H01L33/24 ,  H01S5/34

Abstract: An object of the present invention is to provide a core shell particle having high luminous efficacy and excellent durability; a method of producing the same; and a film obtained by using the core shell particle. The core shell particle of the present invention includes: a core which contains a Group III element and a Group V element; a first shell which covers at least a part of a surface of the core; and a second shell which covers at least a part of the first shell, in which at least a part of a surface of the core shell particle contains a metal-containing organic compound containing a metal element and a hydrocarbon group.

公开(公告)号：US10550323B2

公开(公告)日：2020-02-04

申请号：US16200596

申请日：2018-11-26

Applicant: FUJIFILM Corporation

Inventor： Masashi Ono

IPC: C09K11/70 ,  C01G15/00 ,  C09K11/08 ,  C09K11/02 ,  H01L33/08 ,  C09K11/56 ,  H01L33/06 ,  H01L31/0384 ,  H01L51/42 ,  C01B25/08 ,  B82Y20/00 ,  B82Y40/00

Abstract: An object of the present invention is to provide a core shell particle having high luminous efficacy and excellent durability; a method of producing the same; and a film formed of the core shell particle. The core shell particle of the present invention includes: a core which contains a Group III element and a Group V element; a first shell which covers at least a part of a surface of the core; and a second shell which covers at least a part of the first shell, in which the core shell particle includes a protective layer containing a metal oxide that covers at least a part of the second shell, and at least a part of a surface of the protective layer includes coordination molecules.

公开(公告)号：US10519369B2

公开(公告)日：2019-12-31

申请号：US16409881

申请日：2019-05-13

Applicant: FUJIFILM Corporation

Inventor： Masashi Ono ,  Tsutomu Sasaki

IPC: C09K11/70 ,  C01B25/08

Abstract: An object of the present invention is to provide a core shell particle having high luminous efficacy and a narrow emission half-width; a method of producing the same; and a film formed of the core shell particle. The core shell particle of the present invention includes: a core which contains a Group III element and a Group V element; a first shell which covers at least a part of a surface of the core; a second shell which covers at least a part of the first shell; and a coordination molecule in at least a part of an outermost surface, in which at least silicon is detected by X-ray photoelectron spectroscopy analysis, and a molar ratio of the silicon to the Group III element contained in the core, which is acquired by X-ray photoelectron spectroscopy analysis, is 3.1 or less.