Method of manufacturing semiconductor quantum dot and semiconductor quantum dot

    公开(公告)号:US10947112B2

    公开(公告)日:2021-03-16

    申请号:US16137504

    申请日:2018-09-20

    Abstract: There is provided a method of manufacturing a semiconductor quantum dot including the following steps (A1) and (B1): a step (A1) of causing a nanoparticle including a specific compound semiconductor and a salt of a specific metal a1 to react with each other to introduce the metal a1 into a surface layer of the nanoparticle; and a step (B1) of causing the nanoparticle in which the metal a1 is introduced into the surface layer and a salt of a specific metal b1 to react with each other to introduce the metal b1 into the surface layer of the nanoparticle. There is provided a semiconductor quantum dot having a structure in which a specific metal a1 and/or a specific metal b1 is introduced into a surface layer of a nanoparticle including a specific compound semiconductor.

    Image recording paper medium, method for manufacturing same, and image recording method

    公开(公告)号:US10391803B2

    公开(公告)日:2019-08-27

    申请号:US15938421

    申请日:2018-03-28

    Abstract: An image recording paper medium containing a resin having a constitutional unit represented by General Formula (1) and a constitutional unit represented by General Formula (2-1) and/or a constitutional unit represented by General Formula (2-2), in which in the resin, a content of the constitutional unit represented by General Formula (1) is 30% to 96% by mass, and a total content of the constitutional unit represented by General Formula (2-1) and the constitutional unit represented by General Formula (2-2) is 4% to 70% by mass. Also provided are a manufacturing method of the image recording paper medium and an image recording method including the manufacturing method: where R1, L1, R2, R3, L2, M1 and M2 are as defined herein.

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