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公开(公告)号：US08742401B2
公开(公告)日：2014-06-03
申请号：US14068781
申请日：2013-10-31
发明人： Hamza Yilmaz , Daniel Calafut , Steven Sapp , Nathan Kraft , Ashok Challa
IPC分类号： H01L29/76
CPC分类号： H01L29/7813 , H01L21/26513 , H01L21/26586 , H01L29/0634 , H01L29/0653 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/66666 , H01L29/66712 , H01L29/66727 , H01L29/66734 , H01L29/7827 , H01L2924/0002 , H01L2924/00
摘要： A field effect transistor includes a plurality of trenches extending into a semiconductor region of a first conductivity type. The plurality of trenches includes a plurality of gated trenches and a plurality of non-gated trenches. A body region of a second conductivity extends in the semiconductor region between adjacent trenches. A dielectric material fills a bottom portion of each of the gated and non-gated trenches. A gate electrode is disposed in each gated trench. A conductive material of the second conductivity type is disposed in each non-gated trench such that the conductive material and contacts corresponding body regions along sidewalls of the non-gated trench.
摘要翻译： 场效应晶体管包括延伸到第一导电类型的半导体区域的多个沟槽。 多个沟槽包括多个门控沟槽和多个非门控沟槽。 第二导电体的主体区域在相邻沟槽之间的半导体区域中延伸。 电介质材料填充每个门控沟槽和非门控沟槽的底部。 栅极电极设置在每个门控沟槽中。 第二导电类型的导电材料设置在每个非门控沟槽中，使得导电材料并且沿着非门控沟槽的侧壁接触对应的主体区域。
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2.发明申请公开(公告)号：US20130181282A1
公开(公告)日：2013-07-18
申请号：US13633038
申请日：2012-10-01
发明人： Hamza Yilmaz , Daniel Calafut , Steven Sapp , Nathan Kraft
CPC分类号： H01L29/7813 , H01L21/26513 , H01L21/26586 , H01L29/0634 , H01L29/0653 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/66666 , H01L29/66712 , H01L29/66727 , H01L29/66734 , H01L29/7827 , H01L2924/0002 , H01L2924/00
摘要： A field effect transistor includes a plurality of trenches extending into a semiconductor region of a first conductivity type. The plurality of trenches includes a plurality of gated trenches and a plurality of non-gated trenches. A body region of a second conductivity extends in the semiconductor region between adjacent trenches. A dielectric material fills a bottom portion of each of the gated and non-gated trenches. A gate electrode is disposed in each gated trench. A conductive material of the second conductivity type is disposed in each non-gated trench such that the conductive material and contacts corresponding body regions along sidewalls of the non-gated trench.
摘要翻译： 场效应晶体管包括延伸到第一导电类型的半导体区域的多个沟槽。 多个沟槽包括多个门控沟槽和多个非门控沟槽。 第二导电体的主体区域在相邻沟槽之间的半导体区域中延伸。 电介质材料填充每个门控沟槽和非门控沟槽的底部。 栅极电极设置在每个门控沟槽中。 第二导电类型的导电材料设置在每个非门控沟槽中，使得导电材料并且沿着非门控沟槽的侧壁接触对应的主体区域。
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3.发明授权Trench-based power semiconductor devices with increased breakdown voltage characteristics 有权基于沟槽的功率半导体器件具有增加的击穿电压特性公开(公告)号：US08932924B2
公开(公告)日：2015-01-13
申请号：US14058956
申请日：2013-10-21
IPC分类号： H01L21/336 , H01L29/872 , H01L29/78 , H01L29/40 , H01L29/10 , H01L29/423 , H01L29/417 , H01L29/06
CPC分类号： H01L29/7813 , H01L29/0611 , H01L29/0619 , H01L29/0638 , H01L29/0692 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/42368 , H01L29/42372 , H01L29/4238 , H01L29/7811 , H01L29/7827 , H01L29/872 , H01L29/8725
摘要： Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
摘要翻译： 公开了具有提供增加的击穿电压和其它益处的特征的功率半导体器件。
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4.发明申请公开(公告)号：US20140042536A1
公开(公告)日：2014-02-13
申请号：US14058956
申请日：2013-10-21
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/0611 , H01L29/0619 , H01L29/0638 , H01L29/0692 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/42368 , H01L29/42372 , H01L29/4238 , H01L29/7811 , H01L29/7827 , H01L29/872 , H01L29/8725
摘要： Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
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5.发明申请公开(公告)号：US20140042532A1
公开(公告)日：2014-02-13
申请号：US14058954
申请日：2013-10-21
IPC分类号： H01L29/78 , H01L29/872
CPC分类号： H01L29/7813 , H01L29/0611 , H01L29/0619 , H01L29/0638 , H01L29/0692 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/42368 , H01L29/42372 , H01L29/4238 , H01L29/7811 , H01L29/7827 , H01L29/872 , H01L29/8725
摘要： Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
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6.发明授权Trench-based power semiconductor devices with increased breakdown voltage characteristics 有权基于沟槽的功率半导体器件具有增加的击穿电压特性公开(公告)号：US08963212B2
公开(公告)日：2015-02-24
申请号：US14058954
申请日：2013-10-21
IPC分类号： H01L29/76 , H01L29/78 , H01L29/872 , H01L29/06 , H01L29/10 , H01L29/40 , H01L29/417 , H01L29/423
CPC分类号： H01L29/7813 , H01L29/0611 , H01L29/0619 , H01L29/0638 , H01L29/0692 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/42368 , H01L29/42372 , H01L29/4238 , H01L29/7811 , H01L29/7827 , H01L29/872 , H01L29/8725
摘要： In one general aspsect, a semiconductor device can include at least a first device region and a second device region disposed at a surface of a semiconductor region where the second device region is adjacent to the first device region and spaced apart from the first device region. That semiconductor device can include a connection region disposed between the first device region and the second device region, and a trench extending into the semiconductor region and at least extending from the first device region, through the connection region, and to the second device region. The semiconductor device can include a dielectric layer lining opposing sidewalls of the trench, an electrode disposed in the trench, and a conductive trace disposed over a portion of the trench in the connection region and electrically coupled to a portion of the electrode disposed in the connection region.
摘要翻译： 在一个一般的方面中，半导体器件可以包括至少第一器件区域和第二器件区域，第二器件区域和第二器件区域设置在半导体区域的表面，其中第二器件区域与第一器件区域相邻并且与第一器件区域间隔开。 该半导体器件可以包括设置在第一器件区域和第二器件区域之间的连接区域，以及延伸到半导体区域中并且至少从第一器件区域延伸穿过连接区域到第二器件区域的沟槽。 半导体器件可以包括在沟槽的相对的侧壁衬里的介质层，设置在沟槽中的电极和布置在连接区域中的沟槽的一部分上的导电迹线，并电耦合到布置在连接中的电极的一部分 地区。
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公开(公告)号：US20140054691A1
公开(公告)日：2014-02-27
申请号：US14068781
申请日：2013-10-31
发明人： Hamza Yilmaz , Daniel Calafut , Steven Sapp , Nathan Kraft , Ashok Challa
IPC分类号： H01L29/78 , H01L21/265 , H01L29/66
CPC分类号： H01L29/7813 , H01L21/26513 , H01L21/26586 , H01L29/0634 , H01L29/0653 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/66666 , H01L29/66712 , H01L29/66727 , H01L29/66734 , H01L29/7827 , H01L2924/0002 , H01L2924/00
摘要： A field effect transistor includes a plurality of trenches extending into a semiconductor region of a first conductivity type. The plurality of trenches includes a plurality of gated trenches and a plurality of non-gated trenches. A body region of a second conductivity extends in the semiconductor region between adjacent trenches. A dielectric material fills a bottom portion of each of the gated and non-gated trenches. A gate electrode is disposed in each gated trench. A conductive material of the second conductivity type is disposed in each non-gated trench such that the conductive material and contacts corresponding body regions along sidewalls of the non-gated trench.
摘要翻译： 场效应晶体管包括延伸到第一导电类型的半导体区域的多个沟槽。 多个沟槽包括多个门控沟槽和多个非门控沟槽。 第二导电体的主体区域在相邻沟槽之间的半导体区域中延伸。 电介质材料填充每个门控沟槽和非门控沟槽的底部。 栅极电极设置在每个门控沟槽中。 第二导电类型的导电材料设置在每个非门控沟槽中，使得导电材料并且沿着非门控沟槽的侧壁接触对应的主体区域。
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公开(公告)号：US20140203355A1
公开(公告)日：2014-07-24
申请号：US14223351
申请日：2014-03-24
发明人： Christopher Boguslaw Kocon , Steven Sapp , Paul Thorup , Dean Probst , Robert Herrick , Becky Losee , Hamza Yilmaz , Christopher Lawrence Rexer , Daniel Calafut
IPC分类号： H01L29/78
CPC分类号： H01L29/7827 , H01L21/26586 , H01L27/0629 , H01L29/0619 , H01L29/0847 , H01L29/0869 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/66666 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/7828 , H01L29/872 , H01L2924/13091
摘要： In accordance with an embodiment a structure can include a monolithically integrated trench field-effect transistor (FET) and Schottky diode. The structure can include a first gate trench extending into a semiconductor region, a second gate trench extending into the semiconductor region, and a source region flanking a side of the first gate trench. The source region can have a substantially triangular shape, and a contact opening extending into the semiconductor region between the first gate trench and the second gate trench. The structure can include a conductor layer disposed in the contact opening to electrically contact the source region along at least a portion of a slanted sidewall of the source region, and the semiconductor region along a bottom portion of the contact opening. The conductor layer can form a Schottky contact with the semiconductor region.
摘要翻译： 根据实施例，结构可以包括单片集成沟槽场效应晶体管（FET）和肖特基二极管。 该结构可以包括延伸到半导体区域的第一栅极沟槽，延伸到半导体区域中的第二栅极沟槽和在第一栅极沟槽的侧面的源极区域。 源极区域可以具有基本上三角形的形状，以及延伸到第一栅极沟槽和第二栅极沟槽之间的半导体区域中的接触开口。 该结构可以包括设置在接触开口中的导体层，以沿着源极区域的倾斜侧壁的至少一部分以及沿接触开口的底部部分的半导体区域电接触源极区域。 导体层可与半导体区形成肖特基接触。
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9.发明授权公开(公告)号：US09391193B2
公开(公告)日：2016-07-12
申请号：US14628989
申请日：2015-02-23
IPC分类号： H01L29/76 , H01L29/78 , H01L29/872 , H01L29/06 , H01L29/10 , H01L29/40 , H01L29/417 , H01L29/423
CPC分类号： H01L29/7813 , H01L29/0611 , H01L29/0619 , H01L29/0638 , H01L29/0692 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/42368 , H01L29/42372 , H01L29/4238 , H01L29/7811 , H01L29/7827 , H01L29/872 , H01L29/8725
摘要： Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
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10.发明申请TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN VOLTAGE CHARACTERISTICS 有权基于TRENCH的功率半导体器件具有提高的断开电压特性公开(公告)号：US20150194521A1
公开(公告)日：2015-07-09
申请号：US14628989
申请日：2015-02-23
CPC分类号： H01L29/7813 , H01L29/0611 , H01L29/0619 , H01L29/0638 , H01L29/0692 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/42368 , H01L29/42372 , H01L29/4238 , H01L29/7811 , H01L29/7827 , H01L29/872 , H01L29/8725
摘要： Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
摘要翻译： 公开了具有提供增加的击穿电压和其他益处的特征的示例性功率半导体器件。
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