公开(公告)号：US20070018179A1

公开(公告)日：2007-01-25

申请号：US11534310

申请日：2006-09-22

申请人： Francis Kub ,  Karl Hobart

发明人： Francis Kub ,  Karl Hobart

IPC分类号： H01L33/00 ,  H01L31/00

CPC分类号： H01L29/7802 ,  H01L24/32 ,  H01L29/0657 ,  H01L29/41741 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/7803 ,  H01L29/868 ,  H01L29/872 ,  H01L2924/01322 ,  H01L2924/10155 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00

摘要： The Invention Is A Method For Making Power Device On A Semiconductor Wafer, Where The Backside Of The Wafer Has Been Thinned In Selected Regions To A Thickness Of About 25 Um By Reactive Ion Etching.

摘要翻译： 本发明是一种在半导体晶片上制造功率器件的方法，其中通过反应离子蚀刻在晶片的背面已经在选定的区域中薄化到约25μm的厚度。

公开(公告)号：US20110297958A1

公开(公告)日：2011-12-08

申请号：US13210002

申请日：2011-08-15

申请人： Francis Kub ,  Karl Hobart

发明人： Francis Kub ,  Karl Hobart

IPC分类号： H01L29/205

CPC分类号： H01L29/7787 ,  H01L29/1602 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/42316 ,  H01L29/66462

摘要： A gate after diamond transistor and method of making comprising the steps of depositing a first dielectric layer on a semiconductor substrate, depositing a diamond particle nucleation layer on the first dielectric layer, growing a diamond thin film layer on the first dielectric layer, defining an opening for the gate in the diamond thin film layer, patterning of the diamond thin film layer for a gate metal to first dielectric layer surface, etching the first dielectric layer, depositing and defining a gate metal, and forming a contact window opening in the diamond thin film layer and the first dielectric layer to the ohmic contact.

摘要翻译： 金刚石晶体管之后的栅极和制造方法包括以下步骤：在半导体衬底上沉积第一电介质层，在第一电介质层上沉积金刚石颗粒成核层，在第一电介质层上生长金刚石薄膜层，限定开口 对于金刚石薄膜层中的栅极，将用于栅极金属的金刚石薄膜层图案化成第一介电层表面，蚀刻第一介电层，沉积并限定栅极金属，并在金刚石薄片中形成接触窗口 膜层和第一介电层到欧姆接触。

公开(公告)号：US20090146186A1

公开(公告)日：2009-06-11

申请号：US12329452

申请日：2008-12-05

申请人： Francis Kub ,  Karl Hobart

发明人： Francis Kub ,  Karl Hobart

IPC分类号： H01L29/80 ,  H01L21/04

CPC分类号： H01L29/7787 ,  H01L29/1602 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/42316 ,  H01L29/66462

摘要： A gate after diamond transistor and method of making comprising the steps of depositing a first dielectric layer on a semiconductor substrate, depositing a diamond particle nucleation layer on the first dielectric layer, growing a diamond thin film layer on the first dielectric layer, defining an opening for the gate in the diamond thin film layer, patterning of the diamond thin film layer for a gate metal to first dielectric layer surface, etching the first dielectric layer, depositing and defining a gate metal, and forming a contact window opening in the diamond thin film layer and the first dielectric layer to the ohmic contact.

摘要翻译： 金刚石晶体管之后的栅极和制造方法包括以下步骤：在半导体衬底上沉积第一电介质层，在第一电介质层上沉积金刚石颗粒成核层，在第一电介质层上生长金刚石薄膜层，限定开口 对于金刚石薄膜层中的栅极，将用于栅极金属的金刚石薄膜层图案化成第一介电层表面，蚀刻第一介电层，沉积并限定栅极金属，并在金刚石薄片中形成接触窗口 膜层和第一介电层到欧姆接触。

公开(公告)号：US20060118728A1

公开(公告)日：2006-06-08

申请号：US11258464

申请日：2005-10-25

申请人： Bernard Phlips ,  Francis Kub ,  Karl Hobart ,  James Kurfess

发明人： Bernard Phlips ,  Francis Kub ,  Karl Hobart ,  James Kurfess

IPC分类号： G01T1/24

CPC分类号： G01T1/24

摘要： An apparatus and method for operating a direct wafer bonded semiconductor radiation detector includes bonding a plurality of wafers, receiving a radiation signal from a radiation source thereby producing electron and hole pairs via the radiation signal interacting with the detecting device. A voltage source produces a voltage across the direct bonded wafers, thereby drifting the electrons and holes through the plurality of bonded layers. The drifted electrons and/or holes include total drifted charge information of the detector and are collected and processed either at the detector or remote from the detector.

摘要翻译： 用于操作直接晶片接合半导体辐射检测器的装置和方法包括：接合多个晶片，从辐射源接收辐射信号，从而通过与检测装置相互作用的辐射信号产生电子和空穴对。 电压源在直接接合的晶片上产生电压，从而通过多个接合层漂移电子和空穴。 漂移的电子和/或空穴包括检测器的总漂移电荷信息，并且在检测器处或者远离检测器被收集和处理。

公开(公告)号：US08039301B2

公开(公告)日：2011-10-18

申请号：US12329452

申请日：2008-12-05

申请人： Francis Kub ,  Karl Hobart

发明人： Francis Kub ,  Karl Hobart

IPC分类号： H01L21/00

CPC分类号： H01L29/7787 ,  H01L29/1602 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/42316 ,  H01L29/66462

摘要： A gate after diamond transistor and method of making comprising the steps of depositing a first dielectric layer on a semiconductor substrate, depositing a diamond particle nucleation layer on the first dielectric layer, growing a diamond thin film layer on the first dielectric layer, defining an opening for the gate in the diamond thin film layer, patterning of the diamond thin film layer for a gate metal to first dielectric layer surface, etching the first dielectric layer, depositing and defining a gate metal, and forming a contact window opening in the diamond thin film layer and the first dielectric layer to the ohmic contact.

摘要翻译： 金刚石晶体管之后的栅极和制造方法包括以下步骤：在半导体衬底上沉积第一电介质层，在第一电介质层上沉积金刚石颗粒成核层，在第一电介质层上生长金刚石薄膜层，限定开口 对于金刚石薄膜层中的栅极，将用于栅极金属的金刚石薄膜层图案化成第一介电层表面，蚀刻第一介电层，沉积并限定栅极金属，并在金刚石薄片中形成接触窗口 膜层和第一介电层到欧姆接触。

公开(公告)号：US07358152B2

公开(公告)日：2008-04-15

申请号：US11164412

申请日：2005-11-22

申请人： Francis Kub ,  Karl Hobart

发明人： Francis Kub ,  Karl Hobart

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L24/96 ,  B82Y30/00 ,  H01L21/187 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/4827 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/19042 ,  H01L2924/3011 ,  H01L2924/00

摘要： A method of bonding a wafer to a substrate comprising the steps of: providing a wafer having a front surface and a back surface; attaching the front surface of the wafer to a support; thinning the wafer from the back surface; bonding the back surface of the wafer to a substrate using a thin bonding technique; and removing the support from the front surface of the wafer. A circuit comprising: a substrate; and a wafer; wherein the wafer is at most about 50 microns thick; wherein the wafer has a front surface comprising features; and wherein the wafer has a back surface bonded to the substrate using a thin bonding technique.

摘要翻译： 一种将晶片接合到基板的方法，包括以下步骤：提供具有前表面和后表面的晶片; 将晶片的前表面附接到支撑件; 从背面使晶片变薄; 使用薄接合技术将晶片的背面粘合到基板上; 以及从所述晶片的前表面移除所述支撑件。 一种电路，包括：基板; 和晶圆; 其中所述晶片至多约50微米厚; 其中所述晶片具有包括特征的前表面; 并且其中所述晶片具有使用薄接合技术结合到所述衬底的背表面。

公开(公告)号：US20060199353A1

公开(公告)日：2006-09-07

申请号：US11164412

申请日：2005-11-22

申请人： Francis Kub ,  Karl Hobart

发明人： Francis Kub ,  Karl Hobart

IPC分类号： H01L21/30

CPC分类号： H01L24/96 ,  B82Y30/00 ,  H01L21/187 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/4827 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/19042 ,  H01L2924/3011 ,  H01L2924/00

摘要： A method of bonding a wafer to a substrate comprising the steps of: providing a wafer having a front surface and a back surface; attaching the front surface of the wafer to a support; thinning the wafer from the back surface; bonding the back surface of the wafer to a substrate using a thin bonding technique; and removing the support from the front surface of the wafer. A circuit comprising: a substrate; and a wafer; wherein the wafer is at most about 50 microns thick; wherein the wafer has a front surface comprising features; and wherein the wafer has a back surface bonded to the substrate using a thin bonding technique.

摘要翻译： 一种将晶片接合到基板的方法，包括以下步骤：提供具有前表面和后表面的晶片; 将晶片的前表面附接到支撑件; 从背面使晶片变薄; 使用薄接合技术将晶片的背面粘合到基板上; 以及从所述晶片的前表面移除所述支撑件。 一种电路，包括：基板; 和晶圆; 其中所述晶片至多约50微米厚; 其中所述晶片具有包括特征的前表面; 并且其中所述晶片具有使用薄接合技术结合到所述衬底的背表面。

公开(公告)号：US20120141799A1

公开(公告)日：2012-06-07

申请号：US13310347

申请日：2011-12-02

申请人： Francis Kub ,  Travis Anderson ,  Michael Mastro

发明人： Francis Kub ,  Travis Anderson ,  Michael Mastro

IPC分类号： B32B9/00 ,  B82Y30/00

CPC分类号： B82Y30/00 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/072 ,  H01L33/26 ,  H01L51/442 ,  Y02E10/541 ,  Y10T428/30

摘要： A structure having a semiconductor material film formed graphene material layer that is disposed on a substrate is provided. The structure consists of a heterostructure comprising a semiconductor material film, a substrate, and a graphene material layer consisting of one or more sheets of graphene situated between the semiconductor material film and the substrate. The structure also can further include a graphene interface transition layer at the semiconductor material film interface with the graphene material layer and/or a substrate transition layer at the graphene material layer interface with the substrate.

摘要翻译： 提供了具有设置在基板上的形成有石墨烯材料层的半导体材料膜的结构。 该结构由包括半导体材料膜，衬底和由位于半导体材料膜和衬底之间的一层或多片石墨烯组成的石墨烯材料层的异质结构组成。 该结构还可以包括在与石墨烯材料层的半导体材料膜界面处的石墨烯界面过渡层和/或在与基底的石墨烯材料层界面处的基底过渡层。