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1.发明授权Methods for checking and calibrating concentration sensors in a semiconductor processing chamber 有权在半导体处理室中检查和校准浓度传感器的方法公开(公告)号：US08191397B2
公开(公告)日：2012-06-05
申请号：US12332796
申请日：2008-12-11
IPC分类号： G01N21/00
CPC分类号： G01N27/06
摘要： The present invention provides methods for checking and calibrating one or more concentration sensors in an open or closed system. More specifically, in one embodiment of the present invention, the disclosed method allows for the checking and calibration of one or more concentration sensors in which removal of the liquid from the system is required. In two additional embodiments, the disclosed methods allow for the checking and calibration of one or more concentration sensors without having to remove the liquid from the closed system thereby minimizing contamination of the system while at the same time greatly reducing or eliminating contact of the user with the liquid.
摘要翻译： 本发明提供了用于在开放或封闭系统中检查和校准一个或多个浓度传感器的方法。 更具体地说，在本发明的一个实施例中，所公开的方法允许检查和校准需要从系统中去除液体的一个或多个浓度传感器。 在两个附加实施例中，所公开的方法允许检查和校准一个或多个浓度传感器，而不必从封闭系统中移除液体，从而最小化系统的污染，同时大大减少或消除用户与 液体。
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2.发明申请Methods For Checking And Calibrating Concentration Sensors In A Semiconductor Processing Chamber 有权在半导体处理室中检查和校准浓度传感器的方法公开(公告)号：US20090151419A1
公开(公告)日：2009-06-18
申请号：US12332796
申请日：2008-12-11
IPC分类号： G01D18/00
CPC分类号： G01N27/06
摘要： The present invention provides methods for checking and calibrating one or more concentration sensors in an open or closed system. More specifically, in one embodiment of the present invention, the disclosed method allows for the checking and calibration of one or more concentration sensors in which removal of the liquid from the system is required. In two additional embodiments, the disclosed methods allow for the checking and calibration of one or more concentration sensors without having to remove the liquid from the closed system thereby minimizing contamination of the system while at the same time greatly reducing or eliminating contact of the user with the liquid.
摘要翻译： 本发明提供了用于在开放或封闭系统中检查和校准一个或多个浓度传感器的方法。 更具体地说，在本发明的一个实施例中，所公开的方法允许检查和校准需要从系统中去除液体的一个或多个浓度传感器。 在两个附加实施例中，所公开的方法允许检查和校准一个或多个浓度传感器，而不必从封闭系统中移除液体，从而最小化系统的污染，同时大大减少或消除用户与 液体。
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公开(公告)号：US08974758B2
公开(公告)日：2015-03-10
申请号：US13319281
申请日：2010-04-30
CPC分类号： B01D53/02 , B01D2253/108 , B01D2253/112 , B01D2257/30 , B01D2257/304 , B01D2257/504 , B01D2257/80 , B01D2259/4143 , B01D2259/4145 , B01J20/0244 , B01J20/18 , B01J20/28052 , B01J2220/42 , B01J2220/56 , C01B17/0408 , Y02C10/08 , Y02P20/152
摘要： Disclosed is a process to purify COS and remove H2S without hydrolyzing or trapping the desired COS product.
摘要翻译： 公开了一种净化COS并除去H 2 S而不水解或捕获所需的COS产物的方法。
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公开(公告)号：US08361199B2
公开(公告)日：2013-01-29
申请号：US13117257
申请日：2011-05-27
IPC分类号： B01D53/02
CPC分类号： C01B19/04 , B01D53/02 , B01D53/261 , B01D53/52 , B01D2253/108 , B01D2253/308 , B01D2256/00 , B01D2257/304 , B01D2257/80
摘要： Methods of purifying H2Se by removing H2S and/or H2O are disclosed. The amount of H2S in the H2Se-containing gas is reduced below 10 ppmv by passing the H2Se-containing gas through an AW-500 molecular sieve. H2S and H2O are removed by passing H2Se through a 4 A molecular sieve and subsequently passing H2Se through an AW-500 molecular sieve.
摘要翻译： 公开了通过除去H 2 S和/或H 2 O来纯化H 2 Se的方法。 通过使含H2Se的气体通过AW-500分子筛，含H2Se的气体中的H 2 S的量被降低到低于10ppmv。 通过使H 2 S通过4A分子筛并随后使H 2 Se通过AW-500分子筛除去H 2 S和H 2 O.
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公开(公告)号：US08088938B2
公开(公告)日：2012-01-03
申请号：US12340888
申请日：2008-12-22
CPC分类号： C23C16/4404 , C23C16/4481
摘要： Methods of storing a precursor which decreases the precursor decomposition rate. A vessel is provided, where the vessel has an outer surface made of a first material, and an inner surface made of a second material. The first and second materials are different. A tantalum containing precursor is placed inside the vessel, and the vessel is heated to a temperature between 60° C. and 150° C. At least part of the precursor is withdrawn from the vessel.
摘要翻译： 存储降低前体分解速率的前体的方法。 提供容器，其中容器具有由第一材料制成的外表面和由第二材料制成的内表面。 第一和第二种材料是不同的。 将含钽的前体放置在容器内，并将容器加热至60℃至150℃之间的温度。将至少部分前体从容器中取出。
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公开(公告)号：US20090163732A1
公开(公告)日：2009-06-25
申请号：US12340888
申请日：2008-12-22
IPC分类号： C07F9/00
CPC分类号： C23C16/4404 , C23C16/4481
摘要： Methods of storing a precursor which decreases the precursor decomposition rate. A vessel is provided, where the vessel has an outer surface made of a first material, and an inner surface made of a second material. The first and second materials are different. A tantalum containing precursor is placed inside the vessel, and the vessel is heated to a temperature between 60° C. and 150° C. At least part of the precursor is withdrawn from the vessel.
摘要翻译： 存储降低前体分解速率的前体的方法。 提供容器，其中容器具有由第一材料制成的外表面和由第二材料制成的内表面。 第一和第二种材料是不同的。 将含钽的前体放置在容器内，并将容器加热至60℃至150℃之间的温度。将至少部分前体从容器中取出。
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公开(公告)号：US20120227762A1
公开(公告)日：2012-09-13
申请号：US13502057
申请日：2010-10-14
IPC分类号： B08B7/00
CPC分类号： H01L21/31138 , G03F7/427
摘要： Disclosed are compounds for plasma ashing photoresist layers on a substrate and methods of using the same. The plasma ashing compounds induce limited to no damage to the underlying layer, such as the low-k film layer.
摘要翻译： 公开了用于基板上的等离子体灰化光刻胶层的化合物及其使用方法。 等离子体灰化化合物诱导限于对下层（例如低k膜层）没有损伤。
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8.发明申请Preparation of Lanthanide-Containing Precursors and Deposition of Lanthanide-Containing Films 审中-公开含镧系元素前体的制备和含镧系元素膜的沉积公开(公告)号：US20100078601A1
公开(公告)日：2010-04-01
申请号：US12414152
申请日：2009-03-30
IPC分类号： H01L21/3205 , C23C16/44 , C23C16/00 , H01B1/22 , C07F5/00
摘要： Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. In certain embodiments, the disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent.
摘要翻译： 本文描述了用于沉积含稀土金属的层的方法和组合物。 通常，所公开的方法使用诸如化学气相沉积或原子层沉积的气相沉积方法沉积包含稀土含量化合物的前体化合物。 在某些实施方案中，所公开的前体化合物包括具有至少一个脂族基团作为取代基的环戊二烯基配位体。
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公开(公告)号：US09514959B2
公开(公告)日：2016-12-06
申请号：US14439831
申请日：2013-10-30
申请人： L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , Curtis Anderson , Rahul Gupta , Vincent M. Omarjee , Nathan Stafford , Christian Dussarrat
IPC分类号： H01L21/3065 , H01L21/3213 , H01L21/311 , C07C21/18 , C07C23/06
CPC分类号： H01L21/32139 , C07C17/263 , C07C19/08 , C07C21/18 , C07C23/06 , C07C2601/04 , H01L21/02315 , H01L21/3065 , H01L21/31116 , H01L21/32136 , H01L21/32137
摘要： Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.
摘要翻译： 公开了用于等离子体蚀刻通道孔，栅极沟槽，阶梯接触，电容器孔，接触孔等的衬底上的含Si层中的蚀刻气体，以及使用其的等离子体蚀刻方法。 蚀刻气体是反式-1,1,1,4,4,4-六氟-2-丁烯; 顺式-1,1,1,4,4,4-六氟-2-丁烯; 六氟异丁烯 六氟环丁烷（反式-1,1,2,2,3,4）; 五氟环丁烷（1,1,2,2,3-）; 四氟环丁烷（1,1,2,2-）; 或六氟环丁烷（顺式-1,1,2,2,3,4）。 蚀刻气体可以在含Si层和掩模材料之间提供改进的选择性，对通道区域的损害更小，直的垂直剖面，以及图案高纵横比结构中的弯曲减小。
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公开(公告)号：US20120051995A1
公开(公告)日：2012-03-01
申请号：US13319281
申请日：2010-04-30
IPC分类号： C01B31/26
CPC分类号： B01D53/02 , B01D2253/108 , B01D2253/112 , B01D2257/30 , B01D2257/304 , B01D2257/504 , B01D2257/80 , B01D2259/4143 , B01D2259/4145 , B01J20/0244 , B01J20/18 , B01J20/28052 , B01J2220/42 , B01J2220/56 , C01B17/0408 , Y02C10/08 , Y02P20/152
摘要： Disclosed is a process to purify COS and remove H2S without hydrolyzing or trapping the desired COS product.
摘要翻译： 公开了一种净化COS并除去H 2 S而不水解或捕获所需的COS产物的方法。
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