公开(公告)号：US09045509B2

公开(公告)日：2015-06-02

申请号：US13390452

申请日：2010-08-13

Applicant: Christian Dussarrat ,  Vincent M. Omarjee ,  Venkateswara R. Pallem

Inventor： Christian Dussarrat ,  Vincent M. Omarjee ,  Venkateswara R. Pallem

IPC: C23C16/18 ,  C07F17/00

CPC classification number: C07F17/00 ,  C23C16/18

Abstract: Disclosed are hafnium- and zirconium-containing precursors and methods of providing the same. The disclosed precursors include a ligand and at least one aliphatic group as substituent selected to have greater degrees of freedom than the usual substituents. The disclosed precursors may be used to deposit hafnium- or zirconium-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.

Abstract translation: 公开了含铪和锆的前体及其提供方法。 所公开的前体包括配体和至少一个选自具有比通常取代基更大的自由度的取代基的脂族基团。 所公开的前体可用于使用诸如化学气相沉积或原子层沉积的气相沉积方法沉积含铪层或含锆层。

公开(公告)号：US20170291915A1

公开(公告)日：2017-10-12

申请号：US15512968

申请日：2015-09-23

Applicant: Claudia FAFARD ,  Venkateswara R. PALLEM ,  Jean-Marc GIRARD ,  American Air Liquide, Inc.

Inventor： Claudia FAFARD ,  Venkateswara R. PALLEM ,  Jean-Marc GIRARD

IPC: C07F7/10 ,  H01L21/02 ,  C23C16/455 ,  C07F7/08 ,  C23C16/24

CPC classification number: C07F7/10 ,  C07F7/02 ,  C07F7/08 ,  C23C16/24 ,  C23C16/30 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02123 ,  H01L21/0228 ,  H01L21/02532

Abstract: Disclosed are Si-containing film forming compositions comprising carbosilane substituted amine precursors. The carbosilane substituted amine precursors have the formula (R1)aN(—SiHR2—CH2—SiH2R3)3-a, wherein a=0 or 1; R1 is H, a C1 to C6 alkyl group, or a halogen; R2 and R3 is each independently H; a halogen; an alkoxy group having the formula OR′, wherein R′ is an alkyl group (C1 to C6); or an alkylamino group having the formula NR″2, wherein each R″ is independently H, a C1-C6 alkyl group, a C1-C6 alkenyl group, or a C3-C10 aryl or heterocycle group. Also disclosed are methods of synthesizing the carbosilane substituted amine precursors and their use for deposition processes.

公开(公告)号：US20120145953A1

公开(公告)日：2012-06-14

申请号：US13378093

申请日：2010-06-30

Applicant: Venkateswara R. Pallem ,  Christian Dussarrat

Inventor： Venkateswara R. Pallem ,  Christian Dussarrat

IPC: H01M4/485 ,  H01M4/525 ,  H01M4/505 ,  C01D15/02

CPC classification number: C23C16/45553 ,  C23C16/40 ,  C23C16/409 ,  C23C16/45531

Abstract: Disclosed are lithium-containing compounds and methods of utilizing the same. The disclosed compounds may be used to deposit alkali metal-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. In certain embodiments, the lithium-containing compounds include a ligand and at least one aliphatic group as substituents selected to have greater degrees of freedom than the usual substituent.

Abstract translation: 公开了含锂化合物及其利用方法。 所公开的化合物可以使用诸如化学气相沉积或原子层沉积的气相沉积方法沉积含碱金属的层。 在某些实施方案中，含锂化合物包括配体和至少一个脂族基团，其被选择为具有比常规取代基更大的自由度。

公开(公告)号：US20110250354A1

公开(公告)日：2011-10-13

申请号：US12981872

申请日：2010-12-30

Applicant: Venkateswara R. Pallem ,  Christian Dussarrat

Inventor： Venkateswara R. Pallem ,  Christian Dussarrat

IPC: C23C16/44 ,  C23C16/00 ,  C07F7/28

CPC classification number: H01L21/02205 ,  C07F7/003 ,  C07F7/28 ,  C23C16/18 ,  C23C16/40 ,  C23C16/45553 ,  H01L21/02186 ,  H01L21/02271 ,  H01L21/28229

Abstract: Disclosed are titanium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit titanium, titanium oxide, strontium-titanium oxide, and barium strontium titanate containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.

Abstract translation: 公开了含钛前体及其合成方法。 该化合物可用于使用诸如化学气相沉积或原子层沉积的气相沉积方法沉积钛，氧化钛，锶 - 氧化钛和含钛酸钡锶层。

公开(公告)号：US09087690B2

公开(公告)日：2015-07-21

申请号：US14009812

申请日：2011-04-06

Applicant: Venkateswara R. Pallem ,  Christian Dussarrat

Inventor： Venkateswara R. Pallem ,  Christian Dussarrat

IPC: H01L21/02 ,  C07F7/00 ,  C23C16/40

CPC classification number: H01L21/02181 ,  C07F7/003 ,  C23C16/405 ,  H01L21/02189 ,  H01L21/0228

Abstract: Disclosed are hafnium-containing and zirconium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit hafnium, zirconium, hafnium oxide, and zirconium oxide containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.

Abstract translation: 公开了含铪和锆的前体及其合成方法。 这些化合物可用于使用诸如化学气相沉积或原子层沉积的气相沉积方法沉积铪，锆，氧化铪和含氧化锆的层。

公开(公告)号：US20120329999A1

公开(公告)日：2012-12-27

申请号：US13602717

申请日：2012-09-04

Applicant: Venkateswara R. PALLEM ,  Christian Dussarrat

Inventor： Venkateswara R. PALLEM ,  Christian Dussarrat

IPC: C07F5/00

CPC classification number: H01L21/02192 ,  C07C257/14 ,  C07F17/00 ,  C23C16/18 ,  C23C16/409 ,  C23C16/45531

Abstract: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.

Abstract translation: 本文描述了用于沉积含稀土金属的层的方法和组合物。 通常，所公开的方法使用诸如化学气相沉积或原子层沉积的沉积方法沉积包含稀土含量化合物的前体化合物。 所公开的前体化合物包括具有至少一个脂族基团作为取代基的环戊二烯基配体和脒配体。

公开(公告)号：US20120207928A1

公开(公告)日：2012-08-16

申请号：US13501057

申请日：2010-11-05

Applicant: Christian Dussarrat ,  Vincent M. Omarjee ,  Venkateswara R. Pallem

Inventor： Christian Dussarrat ,  Vincent M. Omarjee ,  Venkateswara R. Pallem

IPC: C23C16/44 ,  C23C16/40

CPC classification number: H01L21/02181 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45553 ,  H01L21/0228

Abstract: Disclosed are hafnium- or zirconium-containing compounds. The compounds may be used to deposit hafnium- or zirconium-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. The hafnium- or zirconium-containing compounds include a ligand at least one aliphatic group as substituents selected to have greater degrees of freedom than the substituents disclosed in the prior art.

Abstract translation: 公开了含铪或锆的化合物。 该化合物可用于使用诸如化学气相沉积或原子层沉积的气相沉积方法沉积含铪层或含锆层。 含铪或锆的化合物包括至少一个脂族基团作为取代基的配体，其被选择为具有比现有技术中公开的取代基更大的自由度。

公开(公告)号：US20100078601A1

公开(公告)日：2010-04-01

申请号：US12414152

申请日：2009-03-30

Applicant: Venkateswara R. PALLEM ,  Benjamin J. Feist ,  Nathan Stafford ,  Christian Dussarrat

Inventor： Venkateswara R. PALLEM ,  Benjamin J. Feist ,  Nathan Stafford ,  Christian Dussarrat

IPC: H01L21/3205 ,  C23C16/44 ,  C23C16/00 ,  H01B1/22 ,  C07F5/00

CPC classification number: C23C16/40 ,  C07F17/00

Abstract: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. In certain embodiments, the disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent.

Abstract translation: 本文描述了用于沉积含稀土金属的层的方法和组合物。 通常，所公开的方法使用诸如化学气相沉积或原子层沉积的气相沉积方法沉积包含稀土含量化合物的前体化合物。 在某些实施方案中，所公开的前体化合物包括具有至少一个脂族基团作为取代基的环戊二烯基配位体。

公开(公告)号：US20160152640A1

公开(公告)日：2016-06-02

申请号：US14905859

申请日：2014-07-18

Applicant: Glenn KUCHENBEISER ,  Christian DUSSARRAT ,  Venkateswara R. PALLEM ,  L'AIR LIQUIDE SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE ,  AMERICAN AIR LIQUIDE, INC.

Inventor： Glenn KUCHENBEISER ,  Christian DUSSARRAT ,  Venkateswara R. PALLEM

IPC: C07F7/02 ,  C23C16/455

CPC classification number: C07F7/025 ,  C07F7/10 ,  C23C16/345 ,  C23C16/401 ,  C23C16/455 ,  C23C16/45553

Abstract: Disclosed are hexacoordinate silicon-containing precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel type devices, refractory materials, or aeronautics. The hexacoordinate silicon-containing molecule have the following formula: (I), wherein each L1, L2, L3 and L4 is independently selected from oxygen or nitrogen atoms; L1 and L2 are joined together via a carbon bridge having one to three carbon atoms; L3 and L4 are joined together via a carbon bridge having one to three carbon atoms; L1, L2 and the carbon bridge forming a monoanionic ligand bonded to silicon; and L3, L4 and the carbon bridge form a monoanionic ligand bonded to silicon.

Abstract translation: 公开了六配位含硅前体，其合成方法及其使用方法使用蒸镀法制造半导体，光伏，LCD-TFT，平板型器件，耐火材料或航空中沉积含硅膜 。 六配位含硅分子具有下式：（I），其中每个L1，L2，L3和L4独立地选自氧或氮原子; L1和L2通过具有一至三个碳原子的碳桥连接在一起; L3和L4通过具有1至3个碳原子的碳桥连接在一起; L1，L2和形成与硅结合的单阴离子配体的碳桥; 并且L3，L4和碳桥形成与硅结合的单阴离子配体。

公开(公告)号：US08692010B1

公开(公告)日：2014-04-08

申请号：US13549067

申请日：2012-07-13

Applicant: Andrey V. Korolev ,  Venkateswara R. Pallem

Inventor： Andrey V. Korolev ,  Venkateswara R. Pallem

IPC: C07F1/08

CPC classification number: C07C225/14 ,  C07C251/12

Abstract: Disclosed are synthesis methods to produce copper bis-ketoiminate and copper bis-ketiminate compounds.

Abstract translation: 公开了生产双 - 酮亚铜酸铜和双 - 酮亚胺铜化合物的合成方法。