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公开(公告)号：US09196765B2
公开(公告)日：2015-11-24
申请号：US14716233
申请日：2015-05-19
申请人： Shuqiang Yang , Michael N. Miller , Mohamed M. Hilali , Fen Wan , Gerard M. Schmid , Liang Wang , Sidlgata V. Sreenivasan , Frank Y. Xu
发明人： Shuqiang Yang , Michael N. Miller , Mohamed M. Hilali , Fen Wan , Gerard M. Schmid , Liang Wang , Sidlgata V. Sreenivasan , Frank Y. Xu
IPC分类号： H01L31/0236 , C23C14/34 , H01L31/20
CPC分类号： H01L31/02363 , B82Y20/00 , C23C14/34 , H01L31/022466 , H01L31/0236 , H01L31/035263 , H01L31/035281 , H01L31/03762 , H01L31/0392 , H01L31/03921 , H01L31/03926 , H01L31/0463 , H01L31/075 , H01L31/076 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： Systems and methods for fabrication of nanostructured solar cells having arrays of nanostructures are described, including nanostructured solar cells having a repeating pattern of pyramid nanostructures, providing for low cost thin-film solar cells with improved PCE.
摘要翻译： 描述了具有纳米结构阵列的纳米结构太阳能电池的制造系统和方法，包括具有金字塔纳米结构重复图案的纳米结构太阳能电池，为具有改进的PCE的低成本薄膜太阳能电池提供。
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公开(公告)号：US08828297B2
公开(公告)日：2014-09-09
申请号：US13290770
申请日：2011-11-07
CPC分类号： B29C59/022 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L29/0673
摘要： Methods of making nano-scale structures with geometric cross-sections, including convex or non-convex cross-sections, are described. The approach may be used to directly pattern substrates and/or create imprint lithography templates or molds that may be subsequently used to directly replicate nano-shaped patterns into other substrates, such as into a functional or sacrificial resist to form functional nanoparticles.
摘要翻译： 描述了制造具有几何横截面的纳米级结构的方法，包括凸形或非凸形横截面。 该方法可以用于直接图案化衬底和/或创建压印光刻模板或模具，其可以随后用于将纳米形图案直接复制到其它衬底中，例如形成功能性或牺牲抗蚀剂以形成功能纳米颗粒。
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公开(公告)号：US20090140458A1
公开(公告)日：2009-06-04
申请号：US12275998
申请日：2008-11-21
申请人： Frank Y. Xu , Weijun Liu , Edward Brian Fletcher , Sidlgata V. Sreenivasan , Byung Jin Choi , Niyaz Khusnatdinov , Anshuman Cherala , Kosta S. Selinidis
发明人： Frank Y. Xu , Weijun Liu , Edward Brian Fletcher , Sidlgata V. Sreenivasan , Byung Jin Choi , Niyaz Khusnatdinov , Anshuman Cherala , Kosta S. Selinidis
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10T428/249978
摘要： An imprint lithography template or imprinting stack includes a porous material defining a multiplicity of pores with an average pore size of at least about 0.4 nm. A porosity of the porous material is at least about 10%. The porous template, the porous imprinting stack, or both may be used in an imprint lithography process to facilitate diffusion of gas trapped between the template and the imprinting stack into the template, the imprinting stack or both, such that polymerizable material between the imprinting stack and the template rapidly forms a substantially continuous layer between the imprinting stack and the template.
摘要翻译： 压印光刻模板或压印叠层包括限定平均孔径至少约0.4nm的多个孔的多孔材料。 多孔材料的孔隙率至少约为10％。 多孔模板，多孔印迹叠层或两者可用于压印光刻工艺，以便于将模板和压印叠层之间的气体扩散到模板，压印叠层或两者中，使得压印叠层之间的可聚合材料 并且模板在压印堆栈和模板之间快速形成基本上连续的层。
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公开(公告)号：US09070803B2
公开(公告)日：2015-06-30
申请号：US13105422
申请日：2011-05-11
申请人： Shuqiang Yang , Michael N. Miller , Mohamed M. Hilali , Fen Wan , Gerard M. Schmid , Liang Wang , Sidlgata V. Sreenivasan , Frank Y. Xu
发明人： Shuqiang Yang , Michael N. Miller , Mohamed M. Hilali , Fen Wan , Gerard M. Schmid , Liang Wang , Sidlgata V. Sreenivasan , Frank Y. Xu
IPC分类号： H01L31/00 , H01L31/0352 , B82Y20/00 , H01L31/0224 , H01L31/0236 , H01L31/0376 , H01L31/0392 , H01L31/075 , H01L31/076 , H01L31/20 , H01L31/0463
CPC分类号： H01L31/02363 , B82Y20/00 , C23C14/34 , H01L31/022466 , H01L31/0236 , H01L31/035263 , H01L31/035281 , H01L31/03762 , H01L31/0392 , H01L31/03921 , H01L31/03926 , H01L31/0463 , H01L31/075 , H01L31/076 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： Systems and methods for fabrication of nanostructured solar cells having arrays of nanostructures are described, including nanostructured solar cells having a repeating pattern of pyramid nanostructures, providing for low cost thin-film solar cells with improved PCE.
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公开(公告)号：US08968620B2
公开(公告)日：2015-03-03
申请号：US13095514
申请日：2011-04-27
申请人： Se-Hyuk Im , Mahadevan GanapathiSubramanian , Edward Brian Fletcher , Niyaz Khusnatdinov , Gerard M. Schmid , Mario Johannes Meissl , Anshuman Cherala , Frank Y. Xu , Byung-Jin Choi , Sidlgata V. Sreenivasan
发明人： Se-Hyuk Im , Mahadevan GanapathiSubramanian , Edward Brian Fletcher , Niyaz Khusnatdinov , Gerard M. Schmid , Mario Johannes Meissl , Anshuman Cherala , Frank Y. Xu , Byung-Jin Choi , Sidlgata V. Sreenivasan
CPC分类号： B29C59/02 , B29C45/76 , B29L2007/001 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10S977/877
摘要： Control of lateral strain and lateral strain ratio (dt/db) between template and substrate through the selection of template and/or substrate thicknesses (Tt and/or Tb), control of template and/or substrate back pressure (Pt and/or Pb), and/or selection of material stiffness are described.
摘要翻译： 通过选择模板和/或衬底厚度（Tt和/或Tb），模板和/或衬底背压（Pt和/或Pb）的控制来控制模板和衬底之间的横向应变和横向应变比（dt / db） ）和/或材料刚度的选择。
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公开(公告)号：US08802747B2
公开(公告)日：2014-08-12
申请号：US13017259
申请日：2011-01-31
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A lithography method for forming nanoparticles includes patterning sacrificial material on a multilayer substrate. In some cases, the pattern is transferred to or into a removable layer of the multilayer substrate, and functional material is disposed on the removable layer of the multilayer substrate and solidified. At least a portion of the functional material is then removed to expose protrusions of the removable layer, and pillars of the functional material are released from the removable layer to yield nanoparticles. In other cases, the multilayer substrate includes the functional material, and the pattern is transferred to or into a removable layer of the multilayer substrate. The sacrificial layer is removed, and pillars of the functional material are released from the removable layer to yield nanoparticles.
摘要翻译： 用于形成纳米颗粒的光刻方法包括在多层基板上图案化牺牲材料。 在一些情况下，将图案转移到多层基板的可移除层或其中，并且将功能材料设置在多层基板的可移除层上并固化。 然后去除功能材料的至少一部分以暴露可移除层的突起，并且功能材料的柱从可除去的层释放以产生纳米颗粒。 在其他情况下，多层基板包括功能材料，并且图案被转移到多层基板的可移除层中或其中。 去除牺牲层，并且功能材料的柱从可除去的层中释放出来以产生纳米颗粒。
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公开(公告)号：US08529778B2
公开(公告)日：2013-09-10
申请号：US12616896
申请日：2009-11-12
IPC分类号： B44C1/22
CPC分类号： G03F7/0035 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： Methods for creating nano-shaped patterns are described. This approach may be used to directly pattern substrates and/or create imprint lithography molds that may be subsequently used to directly replicate nano-shaped patterns into other substrates in a high throughput process.
摘要翻译： 描述了形成纳米形图案的方法。 该方法可以用于直接图案化基底和/或产生压印光刻模具，其可以随后用于在高通量过程中将纳米形图案直接复制到其它基底中。
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公开(公告)号：US20120187085A1
公开(公告)日：2012-07-26
申请号：US13441500
申请日：2012-04-06
申请人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
发明人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
IPC分类号： B44C1/22
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.
摘要翻译： 可以改变残余层的厚度以控制由压印光刻工艺提供的图案化层中的特征的临界尺寸。 残余层的厚度可以与特征的临界尺寸成正比或成反比。 分配技术和材料选择也可以提供图案化层中特征的临界尺寸的控制。
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公开(公告)号：US08021594B2
公开(公告)日：2011-09-20
申请号：US12488642
申请日：2009-06-22
申请人： Steven C. Shackleton , Pankaj B. Lad , Ian Matthew McMackin , Frank Y. Xu , Sidlgata V. Sreenivasan
发明人： Steven C. Shackleton , Pankaj B. Lad , Ian Matthew McMackin , Frank Y. Xu , Sidlgata V. Sreenivasan
CPC分类号： G03F7/0002 , B29C43/003 , B29C43/021 , B29C43/34 , B29C2043/025 , B29C2043/142 , B29C2043/3438 , B29K2105/0002 , B82Y10/00 , B82Y40/00
摘要： A method/process for curing imprint on a template prior to contact with a substrate. A curing process is used to adhere the imprint to a wafer or substrate. Monomer is deposited on a template and then partially cured using a UV exposure. The exposure is controlled so that the imprint is cured past the gel point, but still retains a thin liquid layer of uncured monomer at the surface that will bond with the wafer. Further, this partially cured layer enables the alignment adjustments between the template and the substrate to be performed after contact between the two without pulling any monomer out of the features.
摘要翻译： 在与基底接触之前在模板上固化印模的方法/方法。 使用固化过程将印记粘附到晶片或基板上。 将单体沉积在模板上，然后使用UV曝光部分固化。 控制曝光使得印迹经过凝胶点固化，但仍然保留在将与晶片结合的表面上的未固化单体的薄液体层。 此外，这种部分固化的层使得能够在两者之间接触之后进行模板和基板之间的对准调整，而不将任何单体拉出特征。
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公开(公告)号：US09778562B2
公开(公告)日：2017-10-03
申请号：US12275998
申请日：2008-11-21
申请人： Frank Y. Xu , Weijun Liu , Edward Brian Fletcher , Sidlgata V. Sreenivasan , Byung Jin Choi , Niyaz Khusnatdinov , Anshuman Cherala , Kosta S. Selinidis
发明人： Frank Y. Xu , Weijun Liu , Edward Brian Fletcher , Sidlgata V. Sreenivasan , Byung Jin Choi , Niyaz Khusnatdinov , Anshuman Cherala , Kosta S. Selinidis
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10T428/249978
摘要： An imprint lithography template or imprinting stack includes a porous material defining a multiplicity of pores with an average pore size of at least about 0.4 nm. A porosity of the porous material is at least about 10%. The porous template, the porous imprinting stack, or both may be used in an imprint lithography process to facilitate diffusion of gas trapped between the template and the imprinting stack into the template, the imprinting stack or both, such that polymerizable material between the imprinting stack and the template rapidly forms a substantially continuous layer between the imprinting stack and the template.
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