公开(公告)号：US20120049252A1

公开(公告)日：2012-03-01

申请号：US13289742

申请日：2011-11-04

申请人： Fujio MASUOKA ,  Hiroki NAKAMURA ,  Shintaro ARAI ,  Tomohiko KUDO ,  Navab Singh ,  Kavitha Devi Buddharaju ,  Shen Nansheng ,  Rukmani Devi Sayanthan

发明人： Fujio MASUOKA ,  Hiroki NAKAMURA ,  Shintaro ARAI ,  Tomohiko KUDO ,  Navab Singh ,  Kavitha Devi Buddharaju ,  Shen Nansheng ,  Rukmani Devi Sayanthan

IPC分类号： H01L29/78

CPC分类号： H01L29/7827 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/458 ,  H01L29/66666 ,  H01L29/78642

摘要： A semiconductor device includes a first insulating film formed between a gate electrode and a first flat semiconductor layer, and a sidewall-shaped second insulating film formed to surround an upper sidewall of a first columnar silicon layer while contacting an upper surface of the gate electrode and to surround a sidewall of the gate electrode and the first insulating film. The semiconductor device further includes a metal-semiconductor compound formed on each of an upper surface of a first semiconductor layer of the second conductive type formed in the entirety or the upper portion of the first flat semiconductor layer, and an upper surface of the second semiconductor layer of the second conductive type formed in the upper portion of the first columnar semiconductor layer.

摘要翻译： 半导体器件包括形成在栅极电极和第一平坦半导体层之间的第一绝缘膜，以及侧壁形状的第二绝缘膜，其形成为围绕第一柱状硅层的上侧壁，同时接触栅电极的上表面和 以围绕栅电极和第一绝缘膜的侧壁。 半导体器件还包括形成在第一导电类型的第一半导体层的上表面上的第一半导体层的整体或上部形成的金属半导体化合物和第二半导体的上表面 形成在第一柱状半导体层的上部的第二导电类型的层。

公开(公告)号：US20110042740A1

公开(公告)日：2011-02-24

申请号：US12858840

申请日：2010-08-18

申请人： Fujio MASUOKA ,  Shintaro ARAI ,  Hiroki NAKAMURA ,  Tomohiko KUDO ,  R. Ramana MURTHY ,  Nansheng SHEN ,  Kavitha Devi BUDDHARAJU ,  Navab SINGH

发明人： Fujio MASUOKA ,  Shintaro ARAI ,  Hiroki NAKAMURA ,  Tomohiko KUDO ,  R. Ramana MURTHY ,  Nansheng SHEN ,  Kavitha Devi BUDDHARAJU ,  Navab SINGH

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66666 ,  H01L21/76804 ,  H01L21/76816 ,  H01L29/41741 ,  H01L29/42356 ,  H01L29/7827

摘要： A method for producing a semiconductor device includes preparing a structure having a substrate, a planar semiconductor layer and a columnar semiconductor layer, forming a second drain/source region in the upper part of the columnar semiconductor layer, forming a contact stopper film and a contact interlayer film, and forming a contact layer on the second drain/source region. The step for forming the contact layer includes forming a pattern and etching the contact interlayer film to the contact stopper film using the pattern to form a contact hole for the contact layer and removing the contact stopper film remaining at the bottom of the contact hole by etching. The projection of the bottom surface of the contact hole onto the substrate is within the circumference of the projected profile of the contact stopper film formed on the top and side surface of the columnar semiconductor layer onto the substrate.

摘要翻译： 一种制造半导体器件的方法包括制备具有基板，平面半导体层和柱状半导体层的结构，在柱状半导体层的上部形成第二漏极/源极区域，形成接触阻挡膜和触点 并在第二漏极/源极区域上形成接触层。 形成接触层的步骤包括形成图案，并使用图案将接触层间膜蚀刻到接触阻挡膜，以形成用于接触层的接触孔，并通过蚀刻去除残留在接触孔底部的接触阻挡膜 。 接触孔的底面向基板的突出部位于形成在柱状半导体层的顶部和侧面上的接触阻挡膜的突出轮廓的圆周上。

公开(公告)号：US20110207260A1

公开(公告)日：2011-08-25

申请号：US13101833

申请日：2011-05-05

申请人： Fujio MASUOKA ,  Hiroki NAKAMURA

发明人： Fujio MASUOKA ,  Hiroki NAKAMURA

IPC分类号： H01L31/18

CPC分类号： H01L27/14812 ,  H01L27/14837 ,  H01L31/035281 ,  H01L31/03529 ,  Y02E10/50

摘要： It is an object to provide a CCD solid-state image sensor, in which an area of a read channel is reduced and a rate of a surface area of a light receiving portion (photodiode) to an area of one pixel is increased. There is provided a solid-state image sensor, including: a first conductive type semiconductor layer; a first conductive type pillar-shaped semiconductor layer formed on the first conductive type semiconductor layer; a second conductive type photoelectric conversion region formed on the top of the first conductive type pillar-shaped semiconductor layer, an electric charge amount of the photoelectric conversion region being changed by light; and a high-concentrated impurity region of the first conductive type formed on a surface of the second conductive type photoelectric conversion region, the impurity region being spaced apart from a top end of the first conductive type pillar-shaped semiconductor layer by a predetermined distance, wherein a transfer electrode is formed on the side of the first conductive type pillar-shaped semiconductor layer via a gate insulating film, a second conductive type CCD channel region is formed below the transfer electrode, and a read channel is formed in a region between the second conductive type photoelectric conversion region and the second conductive type CCD channel region.

摘要翻译： 本发明的目的是提供一种CCD固态图像传感器，其中读取通道的面积减小，并且光接收部分（光电二极管）到一个像素的区域的表面积的比率增加。 提供了一种固态图像传感器，包括：第一导电型半导体层; 形成在第一导电型半导体层上的第一导电型柱状半导体层; 第二导电型光电转换区，形成在第一导电型柱状半导体层的顶部，光电转换区域的电荷量由光改变; 以及形成在所述第二导电型光电转换区域的表面上的所述第一导电类型的高浓度杂质区域，所述杂质区域与所述第一导电型柱状半导体层的顶端隔开预定距离， 其中，在所述第一导电型柱状半导体层的侧面经由栅极绝缘膜形成有转印电极，在所述转印电极的下方形成第二导电型CCD沟道区，在所述第二导电型柱状半导体层之间的区域形成读取沟道 第二导电型光电转换区域和第二导电型CCD沟道区域。

公开(公告)号：US20100200731A1

公开(公告)日：2010-08-12

申请号：US12700294

申请日：2010-02-04

申请人： Fujio Masuoka ,  Hiroki NAKAMURA

发明人： Fujio Masuoka ,  Hiroki NAKAMURA

IPC分类号： H01L27/146 ,  H01L31/113

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14689

摘要： It is intended to provide a CMOS image sensor with a high degree of pixel integration. A solid-state imaging device comprises a signal line (256) formed on a Si substrate, an island-shaped semiconductor formed on the signal line, and a pixel selection line (255). The island-shaped semiconductor includes: a first semiconductor layer (252) connected to the signal line; a second semiconductor layer (251) located above and adjacent to the first semiconductor layer; a gate (253) connected to the second semiconductor layer through an insulating film; and a charge storage section comprised of a third semiconductor layer (254) connected to the second semiconductor layer and adapted, in response to receiving light, to undergo a change in amount of electric charges therein; a fourth semiconductor layer (250) located above and adjacent to the second and third semiconductor layers. The pixel selection line (255) is connected to the fourth semiconductor layer formed as a top portion of the island-shaped semiconductor.

摘要翻译： 旨在提供具有高度像素集成度的CMOS图像传感器。 固态成像装置包括形成在Si衬底上的信号线（256），形成在信号线上的岛状半导体和像素选择线（255）。 岛状半导体包括：连接到信号线的第一半导体层（252）; 位于第一半导体层上方并与其相邻的第二半导体层（251）; 通过绝缘膜连接到第二半导体层的栅极（253）; 以及电荷存储部，包括连接到第二半导体层的第三半导体层（254），并且响应于接收光而适应其中的电荷量的变化; 位于第二和第三半导体层上方并与其相邻的第四半导体层（250）。 像素选择线（255）连接到形成为岛状半导体的顶部的第四半导体层。

公开(公告)号：US20110089496A1

公开(公告)日：2011-04-21

申请号：US12854564

申请日：2010-08-11

申请人： Fujio MASUOKA ,  Hiroki NAKAMURA

发明人： Fujio MASUOKA ,  Hiroki NAKAMURA

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/823885 ,  H01L21/8238 ,  H01L21/823807 ,  H01L21/823857 ,  H01L21/84 ,  H01L27/092 ,  H01L27/12

摘要： The object to provide a semiconductor device comprising a highly-integrated SGT-based CMOS inverter circuit is achieved by forming an inverter which comprises: a first transistor including; an first island-shaped semiconductor layer; a first gate insulating film; a gate electrode; a first first-conductive-type high-concentration semiconductor layer arranged above the first island-shaped semiconductor layer; and a second first-conductive-type high-concentration semiconductor layer arranged below the first island-shaped semiconductor layer, and a second transistor including; a second gate insulating film surrounding a part of the periphery of the gate electrode; a second semiconductor layer in contact with a part of the periphery of the second gate insulating film; a first second-conductive-type high-concentration semiconductor layer arranged above the second semiconductor layer; and a second second-conductive-type high-concentration semiconductor layer arranged below the second semiconductor layer.

摘要翻译： 通过形成逆变器来实现提供包括高度集成的基于SGT的CMOS反相器电路的半导体器件的目的，该逆变器包括：第一晶体管， 第一岛形半导体层; 第一栅极绝缘膜; 栅电极; 布置在第一岛状半导体层上方的第一第一导电型高浓度半导体层; 以及布置在所述第一岛状半导体层的下方的第二第一导电型高浓度半导体层，以及第二晶体管， 围绕所述栅电极的周围的一部分的第二栅极绝缘膜; 与所述第二栅极绝缘膜的周边的一部分接触的第二半导体层; 布置在所述第二半导体层上方的第一第二导电型高浓度半导体层; 以及布置在所述第二半导体层下方的第二第二导电型高浓度半导体层。

公开(公告)号：US20100308422A1

公开(公告)日：2010-12-09

申请号：US12794088

申请日：2010-06-04

申请人： Fujio MASUOKA ,  Hiroki NAKAMURA

发明人： Fujio MASUOKA ,  Hiroki NAKAMURA

IPC分类号： H01L27/04

CPC分类号： H01L27/1104 ,  H01L27/0207 ,  H01L27/11

摘要： The object to provide a highly-integrated SGT-based SRAM is achieved by forming an SRAM using an inverter which comprises a first island-shaped semiconductor layer, a first gate dielectric film in contact with a periphery of the first island-shaped semiconductor layer, a first gate electrode having one surface in contact with the first gate dielectric film, a second gate dielectric film in contact with another surface of the first gate electrode, a first arc-shaped semiconductor layer in contact with the second gate dielectric film, a first first-conductive-type high-concentration semiconductor layer arranged on a top of the first island-shaped semiconductor layer, a second first-conductive-type high-concentration semiconductor layer arranged underneath the first island-shaped semiconductor layer, a first second-conductive-type high-concentration semiconductor layer arranged on a top of the first arc-shaped semiconductor layer, and a second second-conductive-type high-concentration semiconductor layer arranged underneath the first arc-shaped semiconductor layer.

摘要翻译： 提供高度集成的基于SGT的SRAM的目的是通过使用逆变器形成SRAM来实现，该逆变器包括第一岛状半导体层，与第一岛状半导体层的周边接触的第一栅极电介质膜， 具有与第一栅极电介质膜接触的一个表面的第一栅极电极，与第一栅电极的另一表面接触的第二栅极电介质膜，与第二栅极电介质膜接触的第一弧形半导体层，第一栅极电极 布置在第一岛状半导体层的顶部上的第一导电型高浓度半导体层，布置在第一岛状半导体层下方的第二第一导电型高浓度半导体层，第一导电型高浓度半导体层，第一导电型高浓度半导体层， 布置在第一弧形半导体层的顶部上的高浓度半导体层和第二第二导电型高浓度半导体层 所述半导体层布置在所述第一弧形半导体层下方。

公开(公告)号：US20120252547A1

公开(公告)日：2012-10-04

申请号：US13426058

申请日：2012-03-21

申请人： Kenta KITAMURA ,  Masumi FUJISAWA ,  Hiroki NAKAMURA

发明人： Kenta KITAMURA ,  Masumi FUJISAWA ,  Hiroki NAKAMURA

IPC分类号： A63F13/12

CPC分类号： G07F17/3276

摘要： A gaming machine, at the time of the result of the base game associated with the payout, determines whether at least a competing game condition associated with the payout is satisfied or not. In the case where it is determined that the competing game condition is satisfied, the gaming machine sets the neighboring gaming terminals as opponents. When the opponent participates in the competing game for winning a payout by competing against the opponent, the gaming machine repeatedly runs an auxiliary unit game as a trigger of running a competing game. In the auxiliary unit game, pieces move on a plurality of chained frames scroll-displayed on the common display. In the case where the frame on which the piece is stopped corresponds to the trigger of the competing game, the competing game is run.

摘要翻译： 在与支付相关联的基本游戏结果时，游戏机确定是否满足至少与支付相关联的竞争游戏条件。 在确定竞争游戏条件满足的情况下，游戏机将相邻的游戏终端设置为对手。 当对手参与通过与对手竞争来获得支付的竞争游戏时，游戏机重复地运行辅助单元游戏作为运行竞争游戏的触发器。 在辅助单元游戏中，片段在公共显示器上滚动显示的多个链接帧上移动。 在停止片段的框架对应于竞争游戏的触发的情况下，竞争游戏被运行。

公开(公告)号：US20070037366A1

公开(公告)日：2007-02-15

申请号：US11462575

申请日：2006-08-04

申请人： Hiroki NAKAMURA

发明人： Hiroki NAKAMURA

IPC分类号： H01L21/20 ,  H01L21/00

CPC分类号： H01L21/02675 ,  H01L21/02524 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/268

摘要： A method of crystallizing a non-monocrystalline semiconductor film, including forming a non-monocrystalline semiconductor film on a substrate, subjecting the non-monocrystalline semiconductor film to a dehydrogenation treatment by way of at least one kind of heat treatment which is selected from the group consisting of irradiating flash lamp beam to a surface of the non-monocrystalline semiconductor film, and blowing a heated inert gas to the surface of the non-monocrystalline semiconductor film, forming a cap film on the surface of the non-monocrystalline semiconductor film, and irradiating, through the cap film, a laser beam to the surface of the non-monocrystalline semiconductor film, the laser beam having a light intensity distribution where the intensity of light increases gradually from a region exhibiting a lowermost light intensity to the periphery of the region, thereby crystallizing the laser beam-irradiated region of the non-monocrystalline semiconductor film.

摘要翻译： 一种使非单晶半导体膜结晶的方法，包括在衬底上形成非单晶半导体膜，通过至少一种热处理对非单晶半导体膜进行脱氢处理，该热处理选自组 包括将闪光灯光束照射到非单晶半导体膜的表面，以及向非单晶半导体膜的表面吹入加热的惰性气体，在非单晶半导体膜的表面上形成盖膜，以及 通过盖膜将激光束照射到非单晶半导体膜的表面，激光束具有光强度分布，其中光强度从表现出最低光强度的区域逐渐增加到该区域的周围 从而结晶非单晶半导体膜的激光束照射区域。

公开(公告)号：US20080303786A1

公开(公告)日：2008-12-11

申请号：US12026814

申请日：2008-02-06

申请人： Hiroki NAKAMURA ,  Hirotaka Hayashi ,  Takashi Nakamura ,  Takayuki Imai

发明人： Hiroki NAKAMURA ,  Hirotaka Hayashi ,  Takashi Nakamura ,  Takayuki Imai

IPC分类号： G06F3/033

CPC分类号： G06F3/04883 ,  A63F2300/1075 ,  G06F3/0412 ,  G06F3/042 ,  G06F3/04886 ,  G06F2203/04806

摘要： An object of the present invention is to achieve an advanced input operation without complicating image processing. A display device of the present invention includes a display unit, an optical input unit, and an image processor. The display unit displays an image on a display screen. The optical input unit captures an image of an object approaching the display screen. The image processor detects that the object comes into contact with the display screen on the basis of a captured image captured by the optical input unit, and then performs image processing to obtain the position coordinates of the object. In the display device, the image processor divides the captured image into a plurality of regions, and performs the image processing on each of the divided regions.

摘要翻译： 本发明的目的是实现高级输入操作而不使图像处理复杂化。 本发明的显示装置包括显示单元，光学输入单元和图像处理器。 显示单元在显示屏幕上显示图像。 光学输入单元捕获接近显示屏幕的物体的图像。 图像处理器基于由光学输入单元捕获的拍摄图像检测对象与显示屏幕接触，然后执行图像处理以获得对象的位置坐标。 在显示装置中，图像处理器将拍摄图像分割成多个区域，并对各分割区域进行图像处理。

公开(公告)号：US20080206941A1

公开(公告)日：2008-08-28

申请号：US12068263

申请日：2008-02-05

申请人： Eiichi OKUNO ,  Hiroki NAKAMURA ,  Naohiro SUZUKI

发明人： Eiichi OKUNO ,  Hiroki NAKAMURA ,  Naohiro SUZUKI

IPC分类号： H01L21/336

CPC分类号： H01L29/7828 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813

摘要： A method for manufacturing a SiC semiconductor device includes: preparing a SiC substrate having a (11-20)-orientation surface; forming a drift layer on the substrate; forming a base region in the drift layer; forming a first conductivity type region in the base region; forming a channel region on the base region to couple between the drift layer and the first conductivity type region; forming a gate insulating film on the channel region; forming a gate electrode on the gate insulating film; forming a first electrode to electrically connect to the first conductivity type region; and forming a second electrode on a backside of the substrate. The device controls current between the first and second electrodes by controlling the channel region. The forming the base region includes epitaxially forming a lower part of the base region on the drift layer.

摘要翻译： 一种制造SiC半导体器件的方法包括：制备具有（11-20）取向表面的SiC衬底; 在衬底上形成漂移层; 在漂移层中形成基极区; 在所述基底区域中形成第一导电类型区域; 在所述基极区上形成沟道区，以在所述漂移层和所述第一导电类型区之间耦合; 在沟道区上形成栅极绝缘膜; 在栅极绝缘膜上形成栅电极; 形成电连接到所述第一导电类型区域的第一电极; 以及在所述衬底的背面上形成第二电极。 该器件通过控制沟道区域来控制第一和第二电极之间的电流。 形成基极区域包括外延地形成漂移层上的基极区域的下部。