公开(公告)号：US5372850A

公开(公告)日：1994-12-13

申请号：US18900

申请日：1993-02-17

申请人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shin-ichi Kinouchi ,  Toshihisa Honda ,  Takeharu Kuroiwa ,  Hisao Watarai ,  Takashi Higaki

发明人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shin-ichi Kinouchi ,  Toshihisa Honda ,  Takeharu Kuroiwa ,  Hisao Watarai ,  Takashi Higaki

IPC分类号： C23C16/40 ,  C23C16/448 ,  C23C16/00

CPC分类号： C23C16/409 ,  C23C16/4481

摘要： In a process for manufacturing an oxide-system dielectric thin film using a raw material compound in which a metal atom is coupled with an organic group through oxygen atoms by the CVD method. A vapor of organic solvent having a boiling point less than 100.degree. C. contacts to the raw material compound at least in one of processes for vaporizing or transporting said raw material compound. The raw material compound of oxide-system dielectric thin film can be vaporized stably and transported to the reactor at a low temperature than before. Therefore, a composition can be controlled homogeneously and an oxide-system dielectric thin film having a good performance can be manufactured.

摘要翻译： 在使用其中通过CVD法将金属原子与有机基团通过氧原子偶联的原料化合物制造氧化物系介质薄膜的方法中。 沸点低于100℃的有机溶剂的蒸气与原料化合物接触，至少一种蒸发或输送原料化合物的方法。 氧化物系介质薄膜的原料化合物能够在比以前低的温度下稳定地蒸发并输送到反应器。 因此，可以均匀地控制组合物，并且可以制造具有良好性能的氧化物系介电薄膜。

公开(公告)号：US06236559B1

公开(公告)日：2001-05-22

申请号：US09461732

申请日：1999-12-16

申请人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

发明人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

IPC分类号： H01G410

CPC分类号： H01L28/40 ,  C23C16/409 ,  C23C16/448 ,  H01L21/31691 ,  H01L28/55

摘要： A capacitor comprising a metal oxide dielectric film deposited by chemical vapor deposition includes dissolving at least one organometallic CVD precursor compound in a solvent system including tetrahydrofuran to form a liquid solution; vaporizing the liquid solution including the at least one organometallic compound; and forming the metal oxide dielectric thin film by depositing at least a portion of the at least one organometallic compound from the vaporized solution on a substrate.

摘要翻译： 包括通过化学气相沉积沉积的金属氧化物电介质膜的电容器包括将至少一种有机金属CVD前体化合物溶解在包括四氢呋喃的溶剂体系中以形成液体溶液; 蒸发包含至少一种有机金属化合物的液体溶液; 以及通过将至少一部分来自所述汽化溶液的所述至少一种有机金属化合物沉积在基底上而形成所述金属氧化物电介质薄膜。

公开(公告)号：US06063443A

公开(公告)日：2000-05-16

申请号：US677317

申请日：1996-07-02

申请人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

发明人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

IPC分类号： C01G23/00 ,  C23C16/40 ,  C23C16/448 ,  C30B29/32 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108

CPC分类号： H01L28/40 ,  C23C16/409 ,  C23C16/448 ,  H01L21/31691 ,  H01L28/55

摘要： The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good repeatability. The present invention provides CVD raw material for oxide-system dielectric thin film wherein organic metal raw material is dissolved in the tetra-hydrofuran and the metal atom of the organic metal raw material is selected at least among Pb, Ti, Zr or alkaline earth metal. As a result, a stable dielectric thin film can be formed by CVD method and the dielectric thin film can be used for a capacitor for memory devices.

摘要翻译： 多源原料以液态溶解在四氢呋喃中，同时并且稳定地输送到反应器，由此形成具有良好重复性的用于具有良好性能的电容器的电介质薄膜。 本发明提供了氧化物系介电薄膜的CVD原料，其中有机金属原料溶解在四氢呋喃中，有机金属原料的金属原子至少选自Pb，Ti，Zr或碱土金属 。 结果，可以通过CVD法形成稳定的电介质薄膜，并且电介质薄膜可以用于存储器件的电容器。

公开(公告)号：US5555154A

公开(公告)日：1996-09-10

申请号：US367745

申请日：1995-01-03

申请人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

发明人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

IPC分类号： C01G23/00 ,  C23C16/40 ,  C23C16/448 ,  C30B29/32 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01G4/10

CPC分类号： H01L28/40 ,  C23C16/409 ,  C23C16/448 ,  H01L21/31691 ,  H01L28/55

摘要： The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good repeatability. The present invention provides CVD raw material for oxide-system dielectric thin film wherein organic metal raw material is dissolved in the tetra-hydrofuran and the metal atom of the organic metal raw material is selected at least among Pb, Ti, Zr or alkaline earth metal. As a result, a stable dielectric thin film can be formed by CVD method and the dielectric thin film can be used for a capacitor for memory devices.

摘要翻译： 多源原料以液态溶解在四氢呋喃中，同时并且稳定地输送到反应器，由此形成具有良好重复性的用于具有良好性能的电容器的电介质薄膜。 本发明提供了氧化物系介电薄膜的CVD原料，其中有机金属原料溶解在四氢呋喃中，有机金属原料的金属原子至少选自Pb，Ti，Zr或碱土金属 。 结果，可以通过CVD法形成稳定的电介质薄膜，并且电介质薄膜可以用于存储器件的电容器。

公开(公告)号：US06212059B1

公开(公告)日：2001-04-03

申请号：US09592862

申请日：2000-06-13

申请人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

发明人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

IPC分类号： H01G410

CPC分类号： C23C16/448 ,  C23C16/409 ,  H01G4/085 ,  H01G4/1227 ,  H01L21/31691 ,  H01L28/40 ,  H01L28/55

摘要： A capacitor for memory devices including a barium strontium titanate system dielectric film, the film being formed from a chemical vapor deposition source material including a liquid solution of respective organometallic compounds of barium, strontium, and titanium dissolved in tetrahydrofuran.

摘要翻译： 一种用于包括钡锶钛酸盐系介电膜的存储器件的电容器，该膜由化学气相沉积源材料形成，该化学气相沉积源材料包括溶解在四氢呋喃中的各种钡，锶和钛的有机金属化合物的液体溶液。

公开(公告)号：US6103002A

公开(公告)日：2000-08-15

申请号：US112569

申请日：1998-07-09

申请人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

发明人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

IPC分类号： C23C16/40 ,  C23C16/448 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316

CPC分类号： C23C16/448 ,  C23C16/409 ,  H01G4/085 ,  H01G4/1227 ,  H01L21/31691 ,  H01L28/40 ,  H01L28/55

摘要： The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good repeatability. The present invention provides CVD raw material for oxide-system dielectric thin film wherein organic metal raw material is dissolved in the tetra-hydrofuran and the metal atom of the organic metal raw material is selected at least among Pb, Ti, Zr or alkaline earth metal. As a result, a stable dielectric thin film can be formed by CVD method and the dielectric thin film can be used for a capacitor for memory devices.

公开(公告)号：US4621249A

公开(公告)日：1986-11-04

申请号：US696795

申请日：1985-01-31

申请人： Fusaoki Uchikawa ,  Morihisa Takeuchi ,  Kozo Shimamoto ,  Kunihiko Miyao ,  Kimio Momiyama ,  Hisao Watarai

发明人： Fusaoki Uchikawa ,  Morihisa Takeuchi ,  Kozo Shimamoto ,  Kunihiko Miyao ,  Kimio Momiyama ,  Hisao Watarai

IPC分类号： G01N27/12 ,  H01C17/065 ,  H01C7/00

CPC分类号： G01N27/121 ,  H01C17/06586

摘要： A moisture sensitive element having on an insulating substrate a moisture sensitive section that changes its electrical resistance according to the humidity of atmosphere. The moisture sensitive section is prepared by mixing a polymerized organic silicon compound with particles of a moisture sensitive, electrically resistant material, applying a coat of the resulting blend onto the insulating substrate, and sintering the coat. The element is strong, has good moisture sensitivity characteristics and can be used for an extended period with little decrease in the moisture sensitivity and little change in the value of resistance.

摘要翻译： 一种湿度敏感元件，在绝缘基板上具有根据大气湿度改变其电阻的湿度敏感部分。 通过将聚合的有机硅化合物与水分敏感的电阻材料的颗粒混合，将所得共混物的涂层施加到绝缘基材上并烧结该涂层来制备湿敏部分。 该元件坚固，具有良好的湿度敏感性，并且可以长时间使用，几乎不会降低湿度敏感性并且阻力值几乎没有变化。

公开(公告)号：US4673910A

公开(公告)日：1987-06-16

申请号：US432953

申请日：1982-09-29

申请人： Fusaoki Uchikawa ,  Morihisa Takeuchi ,  Kozo Shimamoto ,  Kunihiko Miyao ,  Kimio Momiyama ,  Hisao Watarai

发明人： Fusaoki Uchikawa ,  Morihisa Takeuchi ,  Kozo Shimamoto ,  Kunihiko Miyao ,  Kimio Momiyama ,  Hisao Watarai

IPC分类号： G01N27/12 ,  H01C17/065 ,  H01C7/00

CPC分类号： G01N27/121 ,  H01C17/06586

摘要： A moisture sensitive element having on an insulating substrate a moisture sensitive section that changes its electrical resistance according to the humidity of atmosphere. The moisture sensitive section is prepared by mixing a polymerized organic silicon compound with particles of a moisture sensitive, electrically resistant material, applying a coat of the resulting blend onto the insulating substrate, and sintering the coat. The element is strong, has good moisture sensitivity characteristics and can be used for an extended period with little decrease in the moisture sensitivity and little change in the value of resistance.

公开(公告)号：US5134101A

公开(公告)日：1992-07-28

申请号：US806602

申请日：1991-12-12

申请人： Akira Yamada ,  Toshihisa Honda ,  Yoshikazu Utsumi ,  Hisao Watarai

发明人： Akira Yamada ,  Toshihisa Honda ,  Yoshikazu Utsumi ,  Hisao Watarai

IPC分类号： C04B35/47 ,  C04B35/495

CPC分类号： C04B35/495 ,  C04B35/47

摘要： The improved dielectric porcelain for use at high frequencies is represented by the general formula:xSrO.multidot.yCaO.multidot.z[(1-m)TiO.sub.2 .multidot.m/2{TaO.sub.5/2 .multidot.(1-n)GaO.sub.3/2 .multidot.nGdO.sub.3/2 .music-sharp.][where 0.42.ltoreq.x.ltoreq.0.54 (or 0.06.ltoreq.x.ltoreq.0.18);0.06.ltoreq.y.ltoreq.0.18 (or 0.42.ltoreq.y.ltoreq.0.54);z=0.40;0.05.ltoreq.m.ltoreq.0.70;0.00.ltoreq.n.ltoreq.1.00;x+y=0.6]with Mn.sub.2 O.sub.3 being contained in an amount of up to 3 wt% of the total amount. The porcelain can be formulated from essentially similar basic compositions and yet it exhibits specific dielectric constants over a broad range on the order of 20-60 in the microwave frequency region and, at the same time, it has commerically acceptable high values of Q factor as well as stable and small temperature coefficients of dielectric constant.

摘要翻译： 在高频下使用的改进的电介质陶瓷由以下通式表示：xSrOxyCaOxz [（1-m）TiO2xm / 2 {TaO5 / 2x（1-n）GaO3 / 2xnGdO3 / 2＆musics＆] [其中0.42

公开(公告)号：US5128290A

公开(公告)日：1992-07-07

申请号：US721263

申请日：1991-06-26

申请人： Akira Yamada ,  Toshihisa Honda ,  Hisao Watarai ,  Kiyoshi Saitou ,  Yoshikazu Utsumi

发明人： Akira Yamada ,  Toshihisa Honda ,  Hisao Watarai ,  Kiyoshi Saitou ,  Yoshikazu Utsumi

IPC分类号： C04B35/46 ,  C04B35/468 ,  H01B3/12 ,  H01G4/12 ,  H01P7/10

CPC分类号： H01G4/1227 ,  C04B35/4682

摘要： The present invention provides microwave ceramic dielectric materials having large relative dielectric constant, very large Q, and stable and small temperature coefficient.The ceramic dielectric materials of the present invention are expressed by the general formula:[{BaO}.sub.x {TiO.sub.2 }.sub.y {(Sm.sub.2 O.sub.3).sub.1-m-n (SrO.cndot.CeO.sub.2).sub.m (CaO.cndot.CeO.sub.2).sub.n }.sub.z ].sub.1-A [SrTiO.sub.3 ].sub.Awherein, 0.1.ltoreq.x.ltoreq.0.25, 0.6.ltoreq.y.ltoreq.0.85, 0.05.ltoreq.z.ltoreq.0.3, 0.ltoreq.m.ltoreq.0.80, 0.ltoreq.n

摘要翻译： 本发明提供具有相对介电常数大，Q值非常大，温度系数稳定的微波陶瓷介电材料。 本发明的陶瓷电介质材料由以下通式表示：[{BaO} x {TiO 2} y {（Sm 2 O 3）1-mn（SrO.CeO 2）m（CaO.CeO 2）n} z] 1-A [ SrTiO 3] A，其中，0.1≤x≤0.25,0.6≤y≤0.85,0.05≤z≤0.3,0≤m≤0.80,0≤n <0.8，x + y + z = 1，m + n <0.8，x + y + z = 1,0