Abstract:
A detection apparatus comprising a chuck, a probe device, a light-sensing device and a light-concentrating unit is disclosed. The chuck bears light-emitting diode chips. The probe device includes two probes and a power supply. The end point of the probes respectively electrically connects with one of the light-emitting diode chips and the power supply to make the light-emitting diode chip emits a plurality of light beams. The light-sensing device is disposed on one side of a light-emitting surface of the light-emitting diode chip so as to receive the light beams emitted by the light-emitting diode chip. The light-concentrating unit is disposed between the light-emitting diode chip and the light-sensing device to concentrate the light beams emitted by the light-emitting diode chip.
Abstract:
A detection apparatus for light-emitting diode chip comprising a light-collecting apparatus having an opening, a bracing component and a probing device is disclosed. The bracing component is designed to bear at least one light-emitting diode chip. The probing device comprises a power supply and at least two flexible current-transporting elements. The two ends of the current-transporting elements are respectively electrically connected to the light-emitting diode chip and the power supply to enable the light-emitting diode chip to emit light beams. Besides, the detection apparatus for light-emitting diode chip of the present invention further comprises a thimble to push the light-emitting diode chip into the inside of the light-collecting apparatus via the opening such that the light beams emitted by the light-emitting diode chip are collected by the light-collecting apparatus.
Abstract:
A detection apparatus for light-emitting diode chip comprising a substrate with the function of photoelectric conversion and a probing device is disclosed. The substrate is designed to bear at least one light-emitting diode chip. The probing device comprises a power supply and at least two conductive elements. The two ends of the conductive elements are respectively electrically connected to the light-emitting diode chip and the power supply to enable the light-emitting diode chip to emit light beams. Some of the light beams are emitted from the light-emitting diode chip toward the substrate such that the light beams emitted by the light-emitting diode chip are converted into an electric signal by the substrate.
Abstract:
A detection apparatus for light-emitting diode chips comprises a transparent chuck with the light-concentration capability, a probing device and a light-sensing device. The transparent chuck comprises a light-incident plane and a light-emitting plane. The light-incident plane is used to bear a plurality of light-emitting diode chips under detection. The probing device comprises two probe pins and a power supply. The two ends of each probe pin is electrically connected to one of the light-emitting diode chips and the power supply, respectively, to make the light-emitting diode chip emit a plurality of light beams. The light beams penetrate through the transparent chuck by emitting into the incident plane of the transparent chuck. The light-sensing device is disposed on one side of the light-emitting plane of the transparent chuck to receive the light beams which penetrate through the transparent chuck.
Abstract:
The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.