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公开(公告)号：US09576922B2
公开(公告)日：2017-02-21
申请号：US14702984
申请日：2015-05-04
Applicant: GLOBALFOUNDRIES INC.
Inventor： Thomas J. Brunschwiler , Eric D. Perfecto , Jonas Zuercher
CPC classification number: H01L24/10 , B23K1/0016 , B23K1/0053 , B23K1/008 , B23K1/012 , B23K1/20 , B23K31/02 , B23K35/02 , B23K2101/42 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/26 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L2224/10175 , H01L2224/1132 , H01L2224/131 , H01L2224/13111 , H01L2224/13294 , H01L2224/133 , H01L2224/13639 , H01L2224/13644 , H01L2224/13647 , H01L2224/13687 , H01L2224/16227 , H01L2224/16505 , H01L2224/2929 , H01L2224/29387 , H01L2224/32225 , H01L2224/812 , H01L2224/81203 , H01L2224/8121 , H01L2224/8123 , H01L2224/81815 , H01L2224/81909 , H01L2224/81911 , H01L2224/8192 , H01L2224/81986 , H01L2224/83102 , H01L2224/92125 , H01L2924/01322 , H01L2924/07025 , H01L2924/3651 , H01L2924/014 , H01L2924/00014 , H01L2924/01047 , H01L2924/00012 , H01L2924/053 , H01L2924/0665 , H01L2924/05442 , H01L2224/81948
Abstract: A method of forming a stacked surface arrangement for semiconductor devices includes joining a first surface to a second surface with a solder bump, the solder bump including a substantially pure first metal; depositing nanoparticles of a second metal onto a surface of the solder bump; performing an annealing operation to form a film of the second metal on the surface of the solder bump; and performing a reflow or a second annealing operation to transform the solder bump from the substantially pure first metal to an alloy of the first metal and the second metal.
Abstract translation: 一种形成用于半导体器件的堆叠表面布置的方法包括：将第一表面与第二表面焊接在一起，所述焊料凸块包括基本上纯的第一金属; 将第二金属的纳米颗粒沉积到所述焊料凸块的表面上; 执行退火操作以在所述焊料凸块的表面上形成所述第二金属的膜; 以及执行回流或第二退火操作以将焊料凸块从基本上纯的第一金属转变为第一金属和第二金属的合金。
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公开(公告)号：US20160329289A1
公开(公告)日：2016-11-10
申请号：US14702984
申请日：2015-05-04
Applicant: GLOBALFOUNDRIES INC.
Inventor： Thomas J. Brunschwiler , Eric D. Perfecto , Jonas Zuercher
CPC classification number: H01L24/10 , B23K1/0016 , B23K1/0053 , B23K1/008 , B23K1/012 , B23K1/20 , B23K31/02 , B23K35/02 , B23K2101/42 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/26 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L2224/10175 , H01L2224/1132 , H01L2224/131 , H01L2224/13111 , H01L2224/13294 , H01L2224/133 , H01L2224/13639 , H01L2224/13644 , H01L2224/13647 , H01L2224/13687 , H01L2224/16227 , H01L2224/16505 , H01L2224/2929 , H01L2224/29387 , H01L2224/32225 , H01L2224/812 , H01L2224/81203 , H01L2224/8121 , H01L2224/8123 , H01L2224/81815 , H01L2224/81909 , H01L2224/81911 , H01L2224/8192 , H01L2224/81986 , H01L2224/83102 , H01L2224/92125 , H01L2924/01322 , H01L2924/07025 , H01L2924/3651 , H01L2924/014 , H01L2924/00014 , H01L2924/01047 , H01L2924/00012 , H01L2924/053 , H01L2924/0665 , H01L2924/05442 , H01L2224/81948
Abstract: A method of forming a stacked surface arrangement for semiconductor devices includes joining a first surface to a second surface with a solder bump, the solder bump including a substantially pure first metal; depositing nanoparticles of a second metal onto a surface of the solder bump; performing an annealing operation to form a film of the second metal on the surface of the solder bump; and performing a reflow or a second annealing operation to transform the solder bump from the substantially pure first metal to an alloy of the first metal and the second metal.
Abstract translation: 一种形成用于半导体器件的堆叠表面布置的方法包括：将第一表面与第二表面焊接在一起，所述焊料凸块包括基本上纯的第一金属; 将第二金属的纳米颗粒沉积到所述焊料凸块的表面上; 执行退火操作以在所述焊料凸块的表面上形成所述第二金属的膜; 以及执行回流或第二退火操作以将焊料凸块从基本上纯的第一金属转变为第一金属和第二金属的合金。
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