公开(公告)号：US09337334B2

公开(公告)日：2016-05-10

申请号：US14257395

申请日：2014-04-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hari V. Mallela ,  Edward J. Nowak ,  Yunsheng Song ,  Reinaldo A. Vega ,  Keith Kwong Hon Wong ,  Zhijian Yang

IPC: H01L21/02 ,  H01L29/78 ,  H01L29/49 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66 ,  H01L21/28 ,  H03K17/687 ,  H01L29/51

CPC classification number: H01L29/78391 ,  H01L21/28026 ,  H01L21/28291 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/41783 ,  H01L29/49 ,  H01L29/516 ,  H01L29/66568 ,  H01L29/6684 ,  H03K17/687

Abstract: A semiconductor memory device including a channel region and a ferromagnetic gate is provided. The channel region can be formed within a semiconductor nanowire. The ferromagnetic gate is programmed with a selected orientation of magnetization by the electrical current that passes through the channel region in one direction or another. The orientation of the magnetization in the ferromagnetic gate can be detected by changes in the threshold voltage of a field effect transistor employing the ferromagnetic gate as a gate electrode, or can be detected by the resistance of the channel region that changes with the orientation of the magnetization in a two terminal device.

Abstract translation: 提供了包括沟道区和铁磁栅的半导体存储器件。 沟道区可以形成在半导体纳米线内。 铁磁栅极通过在一个方向上通过沟道区域的电流以选定的磁化取向来编程。 可以通过使用铁磁栅极作为栅电极的场效应晶体管的阈值电压的变化来检测铁磁栅极中的磁化方向，或者可以通过随着取向的变化而改变的沟道区域的电阻来检测 二端装置的磁化。

公开(公告)号：US20160071742A1

公开(公告)日：2016-03-10

申请号：US14942228

申请日：2015-11-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Kai D. Feng ,  Wai-Kin Li ,  Ping-Chuan Wang ,  Zhijian Yang

IPC: H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/32139 ,  G09C1/00 ,  H01L21/0273 ,  H01L21/31058 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76885 ,  H01L22/34 ,  H01L23/522 ,  H01L23/5221 ,  H01L23/5226 ,  H01L23/5228 ,  H01L23/528 ,  H01L23/5386 ,  H01L23/544 ,  H01L23/57 ,  H01L2223/54433 ,  H01L2223/5444 ,  H01L2223/5448 ,  H01L2224/05097 ,  H04L9/3278 ,  H04L2209/12

Abstract: An organic material layer is lithographically patterned to include a linear array portion of lines and spaces. In one embodiment, the organic material layer can be an organic planarization layer that is patterned employing a photoresist layer, which is consumed during patterning of the organic planarization layer. Volume expansion of the organic planarization layer upon exposure to a halogen-including gas causes portions of the linear array to collapse at random locations. In another embodiment, the height of the photoresist layer is selected such that the linear array portion of the photoresist layer is mechanically unstable and produces random photoresist collapses. The pattern including random modifications due to the collapse of the organic material layer is transferred into an underlying layer to generate an array of conductive material lines with random electrical disruption of shorts or opens. The structure with random shorts can be employed as a physical unclonable function.