METHOD AND STRUCTURE FOR LOW-K FACE-TO-FACE BONDED WAFER DICING
    2.
    发明申请
    METHOD AND STRUCTURE FOR LOW-K FACE-TO-FACE BONDED WAFER DICING 审中-公开
    用于低K面对面粘结波浪方法和方法的方法和结构

    公开(公告)号:US20170062399A1

    公开(公告)日:2017-03-02

    申请号:US14833209

    申请日:2015-08-24

    Abstract: Methods for removing low-k dielectric material from dicing lanes in a bonded pair of IC wafers and the resulting device are disclosed. Embodiments include providing low-k dielectric and standard dielectric layers on upper surfaces of top and bottom IC substrates, each including an array of adjacent IC die areas separated by dicing lanes; removing from the dicing lanes the standard and low-k dielectric layers to form cavities exposing sections of the upper surfaces of IC substrates; depositing a standard dielectric material in the cavities and on upper surfaces of the standard dielectric layer of the top and bottom IC substrates; planarizing upper surfaces of the standard dielectric material of the IC substrates; forming a face-to-face bonding of the IC substrates, wherein the dicing lanes in the IC substrates are vertically aligned; and dicing adjacent bonded IC die areas through vertically aligned dicing lanes in the IC substrates.

    Abstract translation: 公开了一种用于从结合的IC晶片对中的切割通道中除去低k介电材料的方法以及所得到的器件。 实施例包括在顶部和底部IC基板的上表面上提供低k电介质和标准电介质层,每个包括由切割通道分隔开的相邻IC管芯区域的阵列; 从切割线移除标准和低k电介质层以形成暴露IC基板的上表面的部分的空腔; 在空腔中和顶部和底部IC基板的标准电介质层的上表面上沉积标准电介质材料; 平面化IC基板的标准介电材料的上表面; 形成IC基板的面对面接合,其中IC基板中的切割通道垂直对齐; 并通过IC基板中的垂直排列的切割通道切割相邻的接合IC芯片区域。

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