摘要:
Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.
摘要:
Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.
摘要:
Solar cells having a plurality of sub-cells coupled by metallization structures, and singulation approaches to forming solar cells having a plurality of sub-cells coupled by metallization structures, are described. In an example, a solar cell, includes a plurality of sub-cells, each of the sub-cells having a singulated and physically separated semiconductor substrate portion. Adjacent ones of the singulated and physically separated semiconductor substrate portions have a groove there between. The solar cell also includes a monolithic metallization structure. A portion of the monolithic metallization structure couples ones of the plurality of sub-cells. The groove between adjacent ones of the singulated and physically separated semiconductor substrate portions exposes a portion of the monolithic metallization structure.
摘要:
Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. A method involves patterning a first surface of a metal foil to provide a plurality of alternating grooves and ridges in the metal foil. Non-conductive material regions are formed in the grooves in the metal foil. The metal foil is located above a plurality of alternating N-type and P-type semiconductor regions disposed in or above a substrate to provide the non-conductive material regions in alignment with locations between the alternating N-type and P-type semiconductor regions and to provide the ridges in alignment with the alternating N-type and P-type semiconductor regions. The ridges of the metal foil are adhered to the alternating N-type and P-type semiconductor regions. The metal foil is patterned through the metal foil from a second surface of the metal foil at regions in alignment with the non-conductive material regions.
摘要:
A system and method of patterning dopants of opposite polarity to form a solar cell is described. Two dopant films are deposited on a substrate. A laser is used to pattern the N-type dopant, by mixing the two dopant films into a single film with an exposure to the laser and/or drive the N-type dopant into the substrate to form an N-type emitter. A thermal process drives the P-type dopant from the P-type dopant film to form P-type emitters and further drives the N-type dopant from the single film to either form or further drive the N-type emitter.
摘要:
Approaches for fabricating one-dimensional metallization for solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate and parallel along a first direction to form a one-dimensional layout of emitter regions for the solar cell. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal lines corresponding to the plurality of alternating N-type and P-type semiconductor regions. The plurality of metal lines is parallel along the first direction to form a one-dimensional layout of a metallization layer for the solar cell.
摘要:
Approaches for foil-based metallization of solar cells and the resulting solar cells are described. For example, a method of fabricating a solar cell involves locating a metal foil above a plurality of alternating N-type and P-type semiconductor regions disposed in or above a substrate. The method also involves laser welding the metal foil to the alternating N-type and P-type semiconductor regions. The method also involves patterning the metal foil by laser ablating through at least a portion of the metal foil at regions in alignment with locations between the alternating N-type and P-type semiconductor regions. The laser welding and the patterning are performed at the same time.
摘要:
A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.
摘要:
A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.
摘要:
A system and method of patterning dopants of opposite polarity to form a solar cell is described. Two dopant films are deposited on a substrate. A laser is used to pattern the N-type dopant, by mixing the two dopant films into a single film with an exposure to the laser and/or drive the N-type dopant into the substrate to form an N-type emitter. A thermal process drives the P-type dopant from the P-type dopant film to form P-type emitters and further drives the N-type dopant from the single film to either form or further drive the N-type emitter.