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1.发明授权Method of producing GaN-based semiconductor laser device and semiconductor substrate used therefor 失效制造GaN基半导体激光器件的方法和用于其的半导体衬底公开(公告)号：US06855571B1
公开(公告)日：2005-02-15
申请号：US10366722
申请日：2003-02-14
CPC分类号： B82Y20/00 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/005 , H01S5/0213 , H01S5/0655 , H01S5/2214 , H01S5/2231 , H01S5/34333 , H01S2304/00 , H01S2304/12
摘要： The present invention provides a method for fabricating a GaN-based semiconductor laser device comprising the steps of forming a GaN-based semiconductor layer 102 on a substrate 101; forming, on the surface of the first GaN-based semiconductor layer, a mask layer 103 that comprises a striped pattern composed of a plurality of band-like portions 103a that are regularly arranged in the width direction and an alignment pattern formed by altering the regularity of some portion of the plurality of band-like portions 103a; depositing a second GaN-based semiconductor layer 104 on the mask layer 103 by the selective lateral growth method with starting points at portions of the first GaN-based semiconductor layer 104 that are exposed from the mask layer 103; forming a multi-layered semiconductor that comprises an n-type GaN-based semiconductor layers 105 to 107, an active layer 108, and a p-type GaN-based semiconductor layers 109 to 111 on the second GaN-based semiconductor layer 104; and forming a current injection region 112 directly above the band-like portion 103a while using the alignment pattern as a reference to position the current injection region.
摘要翻译： 本发明提供一种制造GaN基半导体激光器件的方法，包括以下步骤：在衬底101上形成GaN基半导体层102; 在第一GaN基半导体层的表面上形成掩模层103，掩模层103包括由在宽度方向上规则排列的多个带状部分103a组成的条纹图案和通过改变规则性而形成的取向图案 多个带状部分103a的一些部分; 通过选择性横向生长方法在从掩模层103暴露的第一GaN基半导体层104的部分处的起始点，在掩模层103上沉积第二GaN基半导体层104; 形成包含在第二GaN基半导体层104上的n型GaN基半导体层105至107，有源层108和p型GaN基半导体层109至111的多层半导体; 并且在使用对准图案作为基准的同时，在带状部分103a的正上方形成电流注入区域112来定位电流注入区域。
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公开(公告)号：US20110215340A1
公开(公告)日：2011-09-08
申请号：US13109213
申请日：2011-05-17
IPC分类号： H01L33/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/32 , H01L33/38 , H01L33/40 , H01S5/0202 , H01S5/02272 , H01S5/028 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/3202 , H01S2304/04
摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.
摘要翻译： 根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。
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公开(公告)号：US20090022193A1
公开(公告)日：2009-01-22
申请号：US11908430
申请日：2006-03-09
CPC分类号： H01S5/32341 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L29/861 , H01L33/20 , H01L33/382 , H01L33/40 , H01S5/0207 , H01S5/0421 , H01S5/0425 , H01S2301/173
摘要： An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a p-type region and an n-type region; a p-side electrode 32 which is in contact with a portion of the p-type region included in the semiconductor multilayer structure 100; and an n-side electrode 34 provided on the rear face of the n-GaN substrate 10. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrode 34 is adjusted to 5 atom % or less.
摘要翻译： 根据本发明的氮化物半导体器件是氮化物半导体器件，其包括：n-GaN衬底10; 形成在n-GaN衬底10的主面上的半导体多层结构100，包括p型区和n型区的半导体层叠结构100; p侧电极32，其与包含在半导体多层结构体100中的p型区域的一部分接触; 以及设置在n-GaN衬底10的背面上的n侧电极34.n-GaN衬底的背面包括氮表面，使得在背面和n- 侧电极34被调整为5原子％以下。
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公开(公告)号：US08030677B2
公开(公告)日：2011-10-04
申请号：US12375118
申请日：2007-07-13
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/32 , H01L33/38 , H01L33/40 , H01S5/0202 , H01S5/02272 , H01S5/028 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/3202 , H01S2304/04
摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.
摘要翻译： 根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。
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公开(公告)号：US07816696B2
公开(公告)日：2010-10-19
申请号：US11908430
申请日：2006-03-09
IPC分类号： H01L29/267 , H01L21/332
CPC分类号： H01S5/32341 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L29/861 , H01L33/20 , H01L33/382 , H01L33/40 , H01S5/0207 , H01S5/0421 , H01S5/0425 , H01S2301/173
摘要： An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a p-type region and an n-type region; a p-side electrode 32 which is in contact with a portion of the p-type region included in the semiconductor multilayer structure 100; and an n-side electrode 34 provided on the rear face of the n-GaN substrate 10. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrode 34 is adjusted to 5 atom % or less.
摘要翻译： 根据本发明的氮化物半导体器件是氮化物半导体器件，其包括：n-GaN衬底10; 形成在n-GaN衬底10的主面上的半导体多层结构100，包括p型区和n型区的半导体层叠结构100; p侧电极32，其与包含在半导体多层结构体100中的p型区域的一部分接触; 以及设置在n-GaN衬底10的背面上的n侧电极34.n-GaN衬底的背面包括氮表面，使得在背面和n- 侧电极34被调整为5原子％以下。
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公开(公告)号：US07338827B2
公开(公告)日：2008-03-04
申请号：US10547968
申请日：2004-03-09
IPC分类号： H01L21/00
CPC分类号： H01S5/227 , H01S5/0202 , H01S5/0421 , H01S5/2205 , H01S5/32341
摘要： A method for fabricating nitride semiconductor devices according to the present invention includes the steps of: (A) providing a nitride semiconductor substrate, which will be split into chip substrates, which includes device portions that will function as the respective chip substrates when the substrate is split and interdevice portions that connect the device portions together, and in which the average thickness of the interdevice portions is smaller than the thickness of the device portions; (B) defining a masking layer, which has striped openings over the device portions, on the upper surface of the nitride semiconductor substrate; (C) selectively growing nitride semiconductor layers on portions of the upper surface of the nitride semiconductor substrate, which are exposed through the openings of the masking layer; and (D) cleaving the nitride semiconductor substrate along the interdevice portions of the nitride semiconductor substrate, thereby forming nitride semiconductor devices on the respectively split chip substrates.
摘要翻译： 根据本发明的制造氮化物半导体器件的方法包括以下步骤：（A）提供将被分成芯片衬底的氮化物半导体衬底，其包括当衬底为基底时用作各个芯片衬底的器件部分 将装置部分连接在一起的分割和互连部分，并且其中，所述装置间部分的平均厚度小于所述装置部分的厚度; （B）在氮化物半导体衬底的上表面上限定在器件部分上具有条纹开口的掩模层; （C）在氮化物半导体衬底的上表面的通过掩模层的开口露出的部分上选择性地生长氮化物半导体层; 以及（D）沿着氮化物半导体衬底的间隙部分切割氮化物半导体衬底，从而在分别的芯片衬底上形成氮化物半导体器件。
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公开(公告)号：US07056756B2
公开(公告)日：2006-06-06
申请号：US10611851
申请日：2003-07-03
IPC分类号： H01L21/00
CPC分类号： H01S5/32341 , H01S5/0213 , H01S5/0224 , H01S5/02272 , H01S5/0425
摘要： A method for fabricating a nitride semiconductor laser device including a step to expose surfaces of an n-type nitride semiconductor layer (102) and a p-type nitride semiconductor layer (108); a step to cover the surface of the multi-layered semiconductor; with an insulating film (109) that has a thickness greater than the difference in levels between the exposed surface of the n-type nitride semiconductor layer (102) and the outermost surface of the p-type nitride semiconductor layer (108); a step to flatten the surface of the insulating film (109); and a step to form an n-type electrode (111) and a p-type electrode (110) electrically connected to the n-type nitride semiconductor layer (102) and the p-type nitride semiconductor layer (108), respectively. This method makes it possible to obtain a nitride semiconductor laser device that is highly reliable and exhibits an excellent heat diffusing property.
摘要翻译： 一种用于制造氮化物半导体激光器件的方法，包括：暴露n型氮化物半导体层（102）和p型氮化物半导体层（108）的表面的步骤; 覆盖多层半导体表面的步骤; 具有大于n型氮化物半导体层（102）的露出表面与p型氮化物半导体层（108）的最外表面之间的电平差的绝缘膜（109）; 平坦化绝缘膜（109）的表面的步骤; 以及分别形成与n型氮化物半导体层（102）和p型氮化物半导体层（108）电连接的n型电极（111）和p型电极（110）的步骤。 该方法可以获得高可靠性并且具有优异的散热性能的氮化物半导体激光器件。
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8.发明授权Nitride semiconductor device and fabrication method thereof, and method for forming nitride semiconductor substrate 有权氮化物半导体器件及其制造方法以及氮化物半导体衬底的形成方法公开(公告)号：US06927149B2
公开(公告)日：2005-08-09
申请号：US10890263
申请日：2004-07-14
IPC分类号： H01L21/20 , H01S5/02 , H01S5/323 , H01L21/18 , C30B29/38 , C30B29/40 , H01L29/20 , H01L31/0304
CPC分类号： H01S5/32341 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/0265 , H01S5/0207 , H01S5/0213 , H01S5/0217 , H01S5/1017 , H01S5/22 , H01S2304/00 , H01S2304/12
摘要： A nitride semiconductor device comprising a substrate (101) having trenches (102b) each formed of a cavity and peaks (102a) formed from a group III nitride on the surface thereof; a nitride semiconductor layer (106) formed on the substrate (101); and a nitride semiconductor multilayered structure that is formed on the nitride semiconductor layer (106) and has an active layer, wherein the lattice constant of the substrate (101) is different from that of the group III nitride substance (102a), the substrate (101) has a mask (104a) formed from a dielectric (104), the mask (104a) is formed only on the side surfaces of the peaks (102a), the upper surfaces of the peaks (102a) are exposed and the substrate (101) is exposed in the trenches (102b), a height L1 of the mask (104a) is not less than 50 nm and not more than 5000 nm, a width L2 of the trench (102b) is not less than 5000 nm and not more than 50000 nm, and an aspect ratio L1/L2 of the trenches (102b) is not less than 0.001 and not more than 1.0. This structure enhances the reliability of the nitride semiconductor devices.
摘要翻译： 一种氮化物半导体器件，包括具有由空腔形成的沟槽（102b）的衬底（101）和在其表面上由III族氮化物形成的峰（102a）; 形成在所述基板（101）上的氮化物半导体层（106） 以及氮化物半导体多层结构，其形成在所述氮化物半导体层上并具有活性层，其中所述衬底（101）的晶格常数与所述III族氮化物物质（102a）的晶格常数不同，所述衬底 （101）具有由电介质（104）形成的掩模（104a），所述掩模（104a）仅形成在所述峰（102a）的侧表面上，所述峰（102a）的上表面 露出并且衬底（101）暴露在沟槽（102b）中，掩模（104a）的高度L 1不小于50nm且不大于5000nm，沟槽（102）的宽度L 2 b）不小于5000nm且不大于50000nm，并且沟槽（102b）的纵横比L 1 / L 2不小于0.001且不大于1.0。 这种结构提高了氮化物半导体器件的可靠性。
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公开(公告)号：US08222670B2
公开(公告)日：2012-07-17
申请号：US13109213
申请日：2011-05-17
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/32 , H01L33/38 , H01L33/40 , H01S5/0202 , H01S5/02272 , H01S5/028 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/3202 , H01S2304/04
摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.
摘要翻译： 根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。
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公开(公告)号：US08198637B2
公开(公告)日：2012-06-12
申请号：US11872071
申请日：2007-10-15
IPC分类号： H01L27/15
CPC分类号： H01S5/227 , H01S5/0202 , H01S5/0421 , H01S5/2205 , H01S5/32341
摘要： A semiconductor laser includes a nitride semiconductor substrate with a striped raised portion that extends in a resonant cavity length direction, a masking layer, which has been defined on the principal surface of the nitride semiconductor substrate and which has a striped opening in a selected area on the upper surface of the striped raised portion, and a nitride semiconductor multilayer structure, which has been grown on the selected area on the upper surface of the striped raised portion. The nitride semiconductor multilayer structure is thicker than nitride semiconductors on the masking layer, and the nitride semiconductor multilayer structure is broader in width than the striped opening of the masking layer and includes portions that have grown laterally onto the masking layer.
摘要翻译： 半导体激光器包括具有在共振腔长度方向上延伸的条纹凸起部分的氮化物半导体衬底，已经限定在氮化物半导体衬底的主表面上并且在选定区域中具有条纹开口的掩模层 条状隆起部分的上表面和氮化物半导体多层结构，其已经在条纹凸起部分的上表面上的选定区域上生长。 氮化物半导体多层结构比掩模层上的氮化物半导体更厚，并且氮化物半导体多层结构的宽度比掩蔽层的条纹开口宽，并且包括在掩模层上横向生长的部分。
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