公开(公告)号：US20080084678A1

公开(公告)日：2008-04-10

申请号：US11539893

申请日：2006-10-10

申请人： Gary R. Burhance ,  John C. Barron ,  Jorge L. Garcia ,  David J. Meyer

发明人： Gary R. Burhance ,  John C. Barron ,  Jorge L. Garcia ,  David J. Meyer

IPC分类号： H05K1/18

CPC分类号： H05K1/186 ,  H05K3/429 ,  H05K3/4611 ,  H05K2201/0949 ,  H05K2201/10037

摘要： A printed circuit board and a method for imbedding a battery in the printed circuit board are disclosed. The method includes connecting the battery to a first inner pad and a second inner pad on an inner core layer and forming a first battery contact between a first outer pad and the first inner pad. The method also includes electrically isolating the first battery contact and forming a second battery contact between a second outer pad and the second inner pad.

摘要翻译： 公开了印刷电路板和将电池嵌入印刷电路板中的方法。 该方法包括将电池连接到内芯层上的第一内垫和第二内垫，并在第一外垫和第一内垫之间形成第一电池接触。 该方法还包括电隔离第一电池触点并在第二外垫和第二内垫之间形成第二电池触点。

公开(公告)号：US5479665A

公开(公告)日：1996-01-02

申请号：US118883

申请日：1983-09-09

申请人： Joseph P. Cassidy ,  James L. Meyer ,  David J. Meyer

发明人： Joseph P. Cassidy ,  James L. Meyer ,  David J. Meyer

IPC分类号： A61G7/00 ,  A61G7/008 ,  A61G7/015 ,  A61G7/05

CPC分类号： A61G7/008 ,  A61G7/001 ,  A61G7/015

摘要： An automated tri-fold bed includes a bed frame, a mattress support that is pivotable between a horizontal configuration and a mattress folding configuration, and a mechanism for pivoting the mattress support about a transversely centered longitudinal pivot axis. The pivoting mechanism includes an actuating arm attached to the mattress support and an actuator for moving the actuating arm to pivot the mattress support. A mechanism is also provided for folding at least one end of the mattress support about a transverse axis to permit raising of one end of a mattress on the mattress support.

摘要翻译： 自动三折床包括床架，可在水平配置和床垫折叠构型之间枢转的床垫支撑件，以及用于围绕横向居中的纵向枢转轴线枢转床垫支撑件的机构。 枢转机构包括附接到床垫支撑件的致动臂和用于移动致动臂以枢转床垫支撑件的致动器。 还提供了一种用于将床垫支撑件的至少一端围绕横向轴线折叠以允许将床垫的一端抬高在床垫支撑件上的机构。

公开(公告)号：US10340353B2

公开(公告)日：2019-07-02

申请号：US14813460

申请日：2015-07-30

申请人： David J. Meyer ,  Brian P. Downey ,  Douglas S. Katzer

发明人： David J. Meyer ,  Brian P. Downey ,  Douglas S. Katzer

IPC分类号： H01L29/45 ,  H01L21/02 ,  H01L21/04

摘要： A method for integrating epitaxial, metallic transition metal nitride (TMN) layers within a compound semiconductor device structure. The TMN layers have a similar crystal structure to relevant semiconductors of interest such as silicon carbide (SiC) and the Group III-Nitrides (III-Ns) such as gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and their various alloys. Additionally, the TMN layers have excellent thermal stability and can be deposited in situ with other semiconductor materials, allowing the TMN layers to be buried within the semiconductor device structure to create semiconductor/metal/semiconductor heterostructures and superlattices.

公开(公告)号：US09656859B2

公开(公告)日：2017-05-23

申请号：US14687943

申请日：2015-04-16

申请人： David J. Meyer ,  Brian P. Downey

发明人： David J. Meyer ,  Brian P. Downey

IPC分类号： B81C1/00

CPC分类号： B81C1/00539 ,  B81C1/00936 ,  B81C2201/0107 ,  B81C2201/0132 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/0177

摘要： A process for fabricating a suspended microelectromechanical system (MEMS) structure comprising epitaxial semiconductor functional layers that are partially or completely suspended over a substrate. A sacrificial release layer and a functional device layer are formed on a substrate. The functional device layer is etched to form windows in the functional device layer defining an outline of a suspended MEMS device to be formed from the functional device layer. The sacrificial release layer is then etched with a selective release etchant to remove the sacrificial release layer underneath the functional layer in the area defined by the windows to form the suspended MEMS structure.

公开(公告)号：US20160304340A1

公开(公告)日：2016-10-20

申请号：US14687943

申请日：2015-04-16

申请人： David J. Meyer ,  Brian P. Downey

发明人： David J. Meyer ,  Brian P. Downey

IPC分类号： B81C1/00

CPC分类号： B81C1/00539 ,  B81C1/00936 ,  B81C2201/0107 ,  B81C2201/0132 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/0177

摘要： A process for fabricating a suspended microelectromechanical system (MEMS) structure comprising epitaxial semiconductor functional layers that are partially or completely suspended over a substrate. A sacrificial release layer and a functional device layer are formed on a substrate. The functional device layer is etched to form windows in the functional device layer defining an outline of a suspended MEMS device to be formed from the functional device layer. The sacrificial release layer is then etched with a selective release etchant to remove the sacrificial release layer underneath the functional layer in the area defined by the windows to form the suspended MEMS structure.

摘要翻译： 一种用于制造悬浮微机电系统（MEMS）结构的方法，其包括部分或完全悬浮在衬底上的外延半导体功能层。 在基板上形成牺牲剥离层和功能元件层。 功能器件层被蚀刻以在功能器件层中形成窗口，其限定要由功能器件层形成的悬置的MEMS器件的轮廓。 然后用选择性释放蚀刻剂蚀刻牺牲剥离层，以去除由窗口限定的区域中的功能层下方的牺牲剥离层，以形成悬浮的MEMS结构。

公开(公告)号：US20150021624A1

公开(公告)日：2015-01-22

申请号：US14331440

申请日：2014-07-15

申请人： David J. Meyer ,  Brian P. Downey

发明人： David J. Meyer ,  Brian P. Downey

IPC分类号： H01L21/306 ,  H01L29/20 ,  H01L29/16 ,  H01L21/762

CPC分类号： H01L29/1608 ,  H01L21/32134 ,  H01L21/32135 ,  H01L21/6835 ,  H01L21/76256 ,  H01L21/7806 ,  H01L21/7813 ,  H01L29/2003 ,  H01L2221/68368 ,  H01L2924/0002

摘要： A method to remove epitaxial semiconductor layers from a substrate by growing an epitaxial sacrificial layer on the substrate where the sacrificial layer is a transition metal nitride (TMN) or a TMN ternary compound, growing one or more epitaxial device layers on the sacrificial layer, and separating the device layers from the substrate by etching the sacrificial layer to completely remove the sacrificial layer without damaging or consuming the substrate or any device layer. Also disclosed are the related semiconductor materials made by this method.

摘要翻译： 一种通过在衬底上生长外延牺牲层（其中牺牲层是过渡金属氮化物（TMN））或TMN三元化合物，在牺牲层上生长一个或多个外延器件层的步骤，从衬底去除外延半导体层的方法，以及 通过蚀刻牺牲层将器件层与衬底分离，以完全去除牺牲层，而不损坏或消耗衬底或任何器件层。 还公开了通过该方法制造的相关半导体材料。

公开(公告)号：US08652339B1

公开(公告)日：2014-02-18

申请号：US13746361

申请日：2013-01-22

申请人： David J. Meyer ,  Neil P. Green ,  David A. Deen ,  Steven C. Binari

发明人： David J. Meyer ,  Neil P. Green ,  David A. Deen ,  Steven C. Binari

IPC分类号： C03C15/00

CPC分类号： G03F7/094

摘要： A method for patterned deposition of an arbitrary thin film on an arbitrary substrate. A GaAs substrate having a bi-layer structure deposited thereon, the bi-layer structure consisting of a bottom layer of Ge and a top layer of SiN. A photoresist deposited on the top SiN surface of the sample is patterned to form one or more desired patterned features on the sample. The Ge—SiN bi-layer structure on the patterned sample is aniostropically etched so that an undercut is formed in the Ge layer, the SiN forming an overhang over a portion of the GaAs substrate. The remaining photoresist is removed from the sample and the film is deposited on the sample to form a feature on the substrate. The remaining Ge layer is etched away and the SiN layer and film deposited on the SiN layer are lifted from the sample, leaving only the patterned features on the substrate.

摘要翻译： 在任意基板上图案化沉积任意薄膜的方法。 具有沉积在其上的双层结构的GaAs衬底，双层结构由Ge的底层和SiN的顶层组成。 图案化沉积在样品的顶部SiN表面上的光致抗蚀剂以在样品上形成一个或多个所需的图案化特征。 在图案化样品上的Ge-SiN双层结构被人工蚀刻，使得在Ge层中形成底切，SiN在GaAs衬底的一部分上形成突出端。 从样品中除去剩余的光致抗蚀剂，并将膜沉积在样品上以在基底上形成特征。 蚀刻掉剩余的Ge层，并且沉积在SiN层上的SiN层和膜从样品中提起，仅在衬底上留下图案化的特征。

公开(公告)号：US09876081B2

公开(公告)日：2018-01-23

申请号：US14331440

申请日：2014-07-15

申请人： David J. Meyer ,  Brian P. Downey

发明人： David J. Meyer ,  Brian P. Downey

IPC分类号： H01L21/306 ,  H01L29/20 ,  H01L29/16 ,  H01L21/762 ,  H01L21/78 ,  H01L21/3213 ,  H01L21/683

CPC分类号： H01L29/1608 ,  H01L21/32134 ,  H01L21/32135 ,  H01L21/6835 ,  H01L21/76256 ,  H01L21/7806 ,  H01L21/7813 ,  H01L29/2003 ,  H01L2221/68368 ,  H01L2924/0002

摘要： A method to remove epitaxial semiconductor layers from a substrate by growing an epitaxial sacrificial layer on the substrate where the sacrificial layer is a transition metal nitride (TMN) or a TMN ternary compound, growing one or more epitaxial device layers on the sacrificial layer, and separating the device layers from the substrate by etching the sacrificial layer to completely remove the sacrificial layer without damaging or consuming the substrate or any device layer. Also disclosed are the related semiconductor materials made by this method.

公开(公告)号：US09327701B2

公开(公告)日：2016-05-03

申请号：US13820165

申请日：2011-09-26

申请人： Gary M. Sich ,  Jeffrey B. Skweres ,  Michael S. Plechey ,  David J. Meyer

发明人： Gary M. Sich ,  Jeffrey B. Skweres ,  Michael S. Plechey ,  David J. Meyer

IPC分类号： B60T15/02

CPC分类号： B60T15/021 ,  Y10T137/86485

摘要： A service portion of a rail control valve includes a body defining a piston passageway, an inshot valve passageway, and a service accelerated release valve passageway. An inshot valve is received by the inshot valve passageway of the body and a service accelerated release valve is received by the service accelerated release valve passageway.

摘要翻译： 轨道控制阀的维修部分包括限定活塞通道，压头阀通道和服务加速释放阀通道的主体。 蒸气阀由本体的压入阀通道接收，并且服务加速释放阀由服务加速释放阀通道接收。

公开(公告)号：US20160035851A1

公开(公告)日：2016-02-04

申请号：US14813460

申请日：2015-07-30

申请人： David J. Meyer ,  Brian P. Downey ,  Douglas S. Katzer

发明人： David J. Meyer ,  Brian P. Downey ,  Douglas S. Katzer

IPC分类号： H01L29/45 ,  H01L21/02 ,  H01L21/285

CPC分类号： H01L29/45 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/0485 ,  H01L21/0495 ,  H01L29/452

摘要： A method for integrating epitaxial, metallic transition metal nitride (TMN) layers within a compound semiconductor device structure. The TMN layers have a similar crystal structure to relevant semiconductors of interest such as silicon carbide (SiC) and the Group III-Nitrides (III-Ns) such as gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and their various alloys. Additionally, the TMN layers have excellent thermal stability and can be deposited in situ with other semiconductor materials, allowing the TMN layers to be buried within the semiconductor device structure to create semiconductor/metal/semiconductor heterostructures and superlattices.

摘要翻译： 一种将外延金属过渡金属氮化物（TMN）层集成在化合物半导体器件结构内的方法。 TMN层具有与目标相关半导体相似的晶体结构，如碳化硅（SiC）和氮化镓（GaN），氮化铝（AlN），氮化铟（InN）等III族氮化物（III-Ns） ，及其各种合金。 另外，TMN层具有优异的热稳定性，并且可以与其它半导体材料原位沉积，允许将TMN层埋在半导体器件结构内以产生半导体/金属/半导体异质结构和超晶格。