公开(公告)号：US20180033688A1

公开(公告)日：2018-02-01

申请号：US15470387

申请日：2017-03-27

Applicant: Geun Su LEE ,  SK hynix Inc.

Inventor： Ji Won MOON ,  Jin Wook JANG ,  Sang Youl YI ,  Sung Jae LEE ,  Geun Su LEE ,  Young Sun LEE ,  Min Su KIM

IPC: H01L21/768 ,  H01L21/311 ,  C08G77/00 ,  C08G77/18 ,  C08G77/20 ,  H01L21/28 ,  H01L21/04

CPC classification number: H01L21/76861 ,  C08G77/18 ,  C08G77/20 ,  C08G77/80 ,  H01L21/048 ,  H01L21/28 ,  H01L21/311

Abstract: A gap-fill polymer for filling fine pattern gaps, which has a low dielectric constant (flow-k) and excellent gap filling properties may consist of a compound formed by condensation polymerization of a first oligomer represented by the formula 1 and a second oligomer represented by the formula 2.

公开(公告)号：US20170102619A1

公开(公告)日：2017-04-13

申请号：US15058816

申请日：2016-03-02

Applicant: SK hynix Inc.

Inventor： Sung Jae LEE ,  Keun Kyu KONG ,  Jae Hee SIM ,  Jeong Hoon AN ,  Yun Seop OH

IPC: G03F7/40 ,  H01L21/324 ,  G03F7/00 ,  H01L21/027 ,  G03F7/16 ,  G03F7/32

CPC classification number: G03F7/405 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/32 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/324

Abstract: Disclosed are a composition for coating a photoresist pattern and a method for forming a fine pattern using the same. The composition for coating a photoresist pattern includes a polymer compound containing a hydroxyl group and an ammonium base, and a solvent The method for forming a fine pattern includes coating the composition on a previously formed photoresist pattern to thereby effectively reduce the size of a photoresist contact hole or space, and can be used in all semiconductor processes in which a fine pattern is required to be formed.

公开(公告)号：US20210319824A1

公开(公告)日：2021-10-14

申请号：US16988478

申请日：2020-08-07

Applicant: SK hynix Inc. ,  INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY

Inventor： Won Woo RO ,  Hyunwuk LEE ,  Gun KO ,  Ipoom JEONG ,  Min Seong KIM ,  Yong Tag SONG ,  Sung Jae LEE

IPC: G11C11/406 ,  G06N3/04 ,  G11C11/408 ,  G11C11/4094

Abstract: A memory system includes a memory device including a first area being refreshed according to a first refresh period and a second area begin refreshed according to a second refresh period longer than the first refresh period. The memory system also includes a memory controller configured to generate a write command and a write data corresponding to a first write request and a first data.

公开(公告)号：US20180120707A1

公开(公告)日：2018-05-03

申请号：US15816783

申请日：2017-11-17

Applicant: SK hynix Inc.

Inventor： Sung Jae LEE ,  Keun Kyu Kong ,  Jae Hee Sim ,  Jeong Hoon An ,  Yun Seop Oh

IPC: G03F7/40 ,  H01L21/324 ,  H01L21/027 ,  G03F7/00 ,  G03F7/32 ,  G03F7/16

CPC classification number: G03F7/405 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/32 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/324

Abstract: Disclosed are a composition for coating a photoresist pattern and a method for forming a fine pattern using the same. The composition for coating a photoresist pattern includes a polymer compound containing a hydroxyl group and an ammonium base, and a solvent. The method for forming a fine pattern includes coating the composition on a previously formed photoresist pattern to thereby effectively reduce the size of a photoresist contact hole or space, and can be used in all semiconductor processes in which a fine pattern is required to be formed.