公开(公告)号：US20180033688A1

公开(公告)日：2018-02-01

申请号：US15470387

申请日：2017-03-27

Applicant: Geun Su LEE ,  SK hynix Inc.

Inventor： Ji Won MOON ,  Jin Wook JANG ,  Sang Youl YI ,  Sung Jae LEE ,  Geun Su LEE ,  Young Sun LEE ,  Min Su KIM

IPC: H01L21/768 ,  H01L21/311 ,  C08G77/00 ,  C08G77/18 ,  C08G77/20 ,  H01L21/28 ,  H01L21/04

CPC classification number: H01L21/76861 ,  C08G77/18 ,  C08G77/20 ,  C08G77/80 ,  H01L21/048 ,  H01L21/28 ,  H01L21/311

Abstract: A gap-fill polymer for filling fine pattern gaps, which has a low dielectric constant (flow-k) and excellent gap filling properties may consist of a compound formed by condensation polymerization of a first oligomer represented by the formula 1 and a second oligomer represented by the formula 2.

公开(公告)号：US20140057458A1

公开(公告)日：2014-02-27

申请号：US13840551

申请日：2013-03-15

Applicant: Geun Su Lee ,  SK HYNIX INC.

Inventor： Hyung Soon PARK ,  Kwon HONG ,  Jong Min LEE ,  Hyung Hwan KIM ,  Ji Hye HAN ,  Geun Su LEE

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02307 ,  H01L21/02326 ,  H01L21/02343

Abstract: A method for forming a silicon oxide film of a semiconductor device is disclosed. The method of forming the silicon oxide film of the semiconductor device includes performing surface processing using an amine-based compound, so that the uniformity and density of the silicon oxide film may be improved.

Abstract translation: 公开了一种用于形成半导体器件的氧化硅膜的方法。 形成半导体器件的氧化硅膜的方法包括使用胺类化合物进行表面处理，从而可以提高氧化硅膜的均匀性和密度。

公开(公告)号：US07314853B2

公开(公告)日：2008-01-01

申请号：US10875924

申请日：2004-06-24

Applicant: Geun Su Lee ,  Sam Young Kim ,  Keun Do Ban

Inventor： Geun Su Lee ,  Sam Young Kim ,  Keun Do Ban

IPC: C11D1/72

CPC classification number: G03F7/322 ,  C11D1/004 ,  C11D11/0047

Abstract: Disclosed herein are photoresist cleaning solutions useful for cleaning a semiconductor substrate in the last step of a developing step when photoresist patterns are formed. Also disclosed herein are methods for forming photoresist patterns using the solutions. The cleaning solutions of the present invention include H2O as a primary component, a surfactant as an additive, and optionally an alcohol compound. The cleaning solution of the present invention has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to pattern collapse and stabilizing the photoresist pattern formation.

Abstract translation: 本文公开了当形成光致抗蚀剂图案时在显影步骤的最后步骤中用于清洁半导体衬底的光致抗蚀剂清洁溶液。 本文还公开了使用该溶液形成光致抗蚀剂图案的方法。 本发明的清洗溶液包括作为主要组分的H 2 O 2，作为添加剂的表面活性剂和任选的醇化合物。 本发明的清洗液比常规清洗液使用的蒸馏水具有更低的表面张力，从而提高了图案的崩溃性和稳定光刻胶图形的形成。

公开(公告)号：US07235349B2

公开(公告)日：2007-06-26

申请号：US11321126

申请日：2005-12-29

Applicant: Sung Koo Lee ,  Jae Chang Jung ,  Geun Su Lee ,  Ki-Soo Shin

Inventor： Sung Koo Lee ,  Jae Chang Jung ,  Geun Su Lee ,  Ki-Soo Shin

IPC: G03F7/00 ,  G03F7/20 ,  G03F7/26 ,  G03F7/38 ,  G03F7/40

CPC classification number: G03F7/0392 ,  G03F7/0045 ,  G03F7/091 ,  Y10S430/114 ,  Y10S430/119 ,  Y10S430/12 ,  Y10S430/151

Abstract: A process of forming ultra fine patterns using bottom anti-reflective coating containing acid generator. More particularly, a process of forming vertical patterns using an organic bottom anti-reflective coating containing excessive amount of acid generator, in order to prevent formation of sloping patterns due to photoresist resins absorbing wavelength of light used as light sources during lithography process using light sources such as KrF, ArF, VUV, EUV, E-beam and ion beam, even when photoresist resins having high absorbance to light source are used.

Abstract translation: 使用含酸产生器的底部抗反射涂层形成超细纹图案的方法。 更具体地，涉及使用含有过量酸产生剂的有机底部防反射涂层形成垂直图案的方法，以便防止在使用光源的光刻工艺期间吸收用作光源的光的波长的光致抗蚀剂树脂形成倾斜图案 例如KrF，ArF，VUV，EUV，电子束和离子束，即使使用对光源具有高吸光度的光致抗蚀剂树脂。

公开(公告)号：US07208260B2

公开(公告)日：2007-04-24

申请号：US10080507

申请日：2002-02-22

Applicant: Jae Chang Jung ,  Keun Kyu Kong ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Balk

Inventor： Jae Chang Jung ,  Keun Kyu Kong ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Balk

IPC: G03C1/73 ,  G03F7/038 ,  G03F7/039 ,  G03F7/30 ,  C08F232/00

CPC classification number: G03F7/039 ,  C07C69/54 ,  C08F22/105 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

Abstract: The present invention discloses a cross-linking monomer represented by the following Chemical Formula 1, a process for preparing a photoresist polymer using the same, and said photoresist polymer: wherein, R′ and R″ individually represent hydrogen or methyl; m represents a number of 1 to 10; and R is selected from the group consisting of straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group.

Abstract translation: 本发明公开了由以下化学式1表示的交联单体，使用该交联单体的光致抗蚀剂聚合物的制备方法，所述光致抗蚀剂聚合物：其中，R'和R“分别表示氢或甲基 ; m表示1〜10的数; 并且R选自直链或支链C 1-10烷基，直链或支链C 1-10 1-10酯，直链或支链C 1〜 直链或支链C 1-10 1-10羧酸，直链或支链C 1-10 - 缩醛，直链或支链C 1-10 包括至少一个羟基，直链或支链C 1-10 1-10酯，包括至少一个羟基，直链或支链C 1-10 1-10酮，包括 至少一个羟基，包括至少一个羟基的直链或支链C 1-10 - 羧酸，和包含至少一个羟基的直链或支链C 1-10 - 组。

公开(公告)号：US07132217B2

公开(公告)日：2006-11-07

申请号：US10891568

申请日：2004-07-15

Applicant: Geun Su Lee ,  Sam Young Kim

Inventor： Geun Su Lee ,  Sam Young Kim

IPC: G03C1/825 ,  G03F7/20 ,  G03F7/30

CPC classification number: G03F7/091 ,  Y10S430/106 ,  Y10S430/151 ,  Y10S430/162

Abstract: Disclosed are an organic anti-reflective coating composition which is introduced to top portion of a photoresist and a pattern forming method using the same, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF or 157 nm VUV light source, and more particularly to, an organic anti-reflective coating composition which can protect photoresist from atmospheric amine to minimize a post exposure delay effect, and minimize pattern distortion caused by diffused reflection, i.e., a swing phenomenon, with the improvement of a notching phenomenon and the reduction of reflection rate, and a patterning forming method using the same.

Abstract translation: 公开了一种有机抗反射涂层组合物，其被引入到光致抗蚀剂的顶部和使用其的图案形成方法中，在用于通过使用193nm ArF或157nm VUV光形成用于光刻的光刻胶的超精细图案的工艺中 来源，更具体地涉及一种有机抗反射涂料组合物，其可以保护光致抗蚀剂免受大气胺以最小化后曝光延迟效应，并且使扩散反射（即摆动现象）引起的图案失真最小化，同时改善切口 现象和反射率的降低，以及使用其的图案形成方法。

公开(公告)号：US07083893B2

公开(公告)日：2006-08-01

申请号：US10718959

申请日：2003-11-21

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: G03C1/73 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38 ,  C08F8/14

CPC classification number: G03F7/0046 ,  G03F7/0045 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/126

Abstract: Photoresist polymers and photoresist compositions are disclosed. A photoresist polymer represented by Formula 1 and a photoresist composition containing the same have excellent etching resistance, thermal resistance and adhesive property, and high affinity to an developing solution, thereby improving LER (line edge roughness). wherein X1, X2, R1, R2, m, n, a, b and c are as defined in the description.

Abstract translation: 公开了光致抗蚀剂聚合物和光刻胶组合物。 由式1表示的光致抗蚀剂聚合物和含有它的光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且对显影液具有高亲和性，从而提高LER（线边缘粗糙度）。 其中X 1，X 2，R 1，R 2，m，n，a，b和c 如说明书中所定义。

公开(公告)号：US06924078B2

公开(公告)日：2005-08-02

申请号：US10225992

申请日：2002-08-22

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin ,  Se Jin Choi ,  Deog Bae Kim ,  Jae Hyun Kim

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin ,  Se Jin Choi ,  Deog Bae Kim ,  Jae Hyun Kim

IPC: G03F7/027 ,  C07D273/00 ,  C07D323/00 ,  C08F226/06 ,  C08F232/00 ,  C08F234/02 ,  G03F7/039 ,  H01L21/027 ,  G03F7/40

CPC classification number: C07D273/00 ,  C07D323/00 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/143

Abstract: Photoresist monomers, polymers thereof, photoresist compositions containing the same for preventing acid generated in the exposed area during the course of a photolithography process from being diffused to the unexposed area. The line edge roughness and slope pattern are improved when an ultrafine photoresist pattern is formed using photoresist copolymer having a multi-oxygen-containing compound as a repeating unit such as an ethyleneoxy moiety represented by Formula 1 with at least one polymerizable carbon-carbon double bond. In addition, the shape of pattern is improved by eliminating top loss and the adhesion of pattern to the substrate is improved. wherein n is an integer ranging from 1 to 5.

Abstract translation: 光致抗蚀剂单体，其聚合物，含有其的光致抗蚀剂组合物，用于防止在光刻过程中在曝光区域产生的酸被扩散到未曝光区域。 当使用具有多含氧化合物作为重复单元的光致抗蚀剂共聚物形成超细光致抗蚀剂图案时，线边缘粗糙度和斜率图案得到改善，所述重复单元例如由式1表示的乙氧基部分与至少一个可聚合的碳 - 碳双键 。 此外，通过消除顶部损耗来提高图案的形状，并提高图案对基板的粘附性。 其中n是1至5的整数。

公开(公告)号：US06921622B2

公开(公告)日：2005-07-26

申请号：US10054532

申请日：2002-01-22

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

IPC: C08F234/04 ,  G03F7/004 ,  G03F7/039 ,  G03F7/20

CPC classification number: G03F7/0046 ,  C08F234/04 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/106

Abstract: Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist polymer includes a repeating unit comprising the photoresist monomer of Formula 1 as a comonomer and the photoresist composition containing the same have excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device

Abstract translation: 下列通式1的光致抗蚀剂单体，其光致抗蚀剂聚合物和含有它们的光致抗蚀剂组合物。 光致抗蚀剂聚合物包括包含作为共聚单体的式1的光致抗蚀剂单体的重复单元，并且含有该光致抗蚀剂组合物的光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和与晶片的粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。 此外，光致抗蚀剂组合物在157nm波长处具有低吸光度，因此适用于在制造用于高集成度半导体器件的微小电路中使用诸如VUV（157nm）的紫外光源的光刻工艺

公开(公告)号：US06861199B2

公开(公告)日：2005-03-01

申请号：US10609509

申请日：2003-06-30

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/09

CPC classification number: G03F7/0395 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/091 ,  Y10S430/108 ,  Y10S430/115

Abstract: TIMD (tetraisopropyl methylene diphosphonate) as a light absorbance depressant to a light source of a wavelength of less than 200 nm, and a photoresist composition containing the same are disclosed. The disclosed chemically amplified photoresist composition containing TIMD is useful for a VUV (vacuum ultraviolet) photoresist composition due to its low light absorbance to a light source of a wavelength of 157 nm.

Abstract translation: 公开了作为对波长小于200nm的光源的光吸收抑制剂的TIMD（四异丙基亚甲基二膦酸酯）和含有它们的光致抗蚀剂组合物。 所公开的含有TIMD的化学放大光致抗蚀剂组合物由于对波长为157nm的光源的低吸光度而适用于VUV（真空紫外）光致抗蚀剂组合物。