公开(公告)号：US20090223633A1

公开(公告)日：2009-09-10

申请号：US12434877

申请日：2009-05-04

申请人： Go MIYA ,  Manabu EDAMURA ,  Ken YOSHIOKA ,  Ryoji NISHIO

发明人： Go MIYA ,  Manabu EDAMURA ,  Ken YOSHIOKA ,  Ryoji NISHIO

IPC分类号： C23F1/08

CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01L21/67017 ,  H01L21/67069

摘要： A plasma etching apparatus capable of performing processing with excellent in-plane uniformity on an object to be processed having a large diameter is provided. The present invention provides a plasma etching apparatus including a processing chamber 13 which performs plasma processing on an object to be processed 1, a first processing gas supply source 40, a second processing gas supply source 50, a first gas inlet 65-1 which introduces a processing gas into the processing chamber, second gas inlets 65-2 which introduce the processing gas into the processing chamber, flow rate regulators 42 and 53 which regulate the flow rate of the processing gas and a gas shunt 60 which divides the first processing gas into a plurality of portions, wherein at least two gas pipes branched by the shunt 60 are provided with the first gas inlet 65-1 or second gas inlets 65-2 and merging sections 63-1 and 63-2 are provided between the shunt 60 and the first gas inlet 65-1 and between the shunt 60 and the second gas inlets 65-2 for merging the second processing gas.

摘要翻译： 提供了能够对具有大直径的待处理物体进行具有优异的面内均匀性的处理的等离子体蚀刻装置。 本发明提供一种等离子体蚀刻装置，其包括对被处理物1进行等离子体处理的处理室13，第一处理气体供给源40，第二处理气体供给源50，第一气体供给源 进入处理室的处理气体，将处理气体引入处理室的第二气体入口65-2，调节处理气体的流量的流量调节器42和53以及将第一处理气体 其中由分流器60分支的至少两个气体管道设置有第一气体入口65-1或第二气体入口65-2以及合流部分63-1和63-2，分流器60 和第一气体入口65-1以及分流器60和第二气体入口65-2之间，用于合并第二处理气体。

公开(公告)号：US20080011716A1

公开(公告)日：2008-01-17

申请号：US11778780

申请日：2007-07-17

申请人： Ryoji NISHIO ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

发明人： Ryoji NISHIO ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

IPC分类号： C23F1/00

CPC分类号： C23C16/4558 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32697 ,  H01L21/67069

摘要： A plasma processing method for a plasma processing apparatus which includes, a gas ring, a bell jar, an antenna, a sample table, a Faraday shield, and an RF power source circuit for supplying a power source voltage to the antenna and the Faraday shield. The RF power source circuit includes an RF power source, an antenna connected with the RF power source, a resonance circuit connected in series with the antenna and supplying a resonance voltage, a detection circuit for detecting the resonance voltage of the resonance circuit, and a comparator circuit for comparing the resonance voltage detected by the detection circuit with a predetermined set value. A constant of the resonance circuit is changed based on the result of comparison by the comparison circuit.

摘要翻译： 一种等离子体处理装置的等离子体处理方法，包括气体环，钟罩，天线，样品台，法拉第屏蔽和用于向天线和法拉第屏蔽提供电源电压的RF电源电路 。 RF电源电路包括RF电源，与RF电源连接的天线，与天线串联连接并提供谐振电压的谐振电路，用于检测谐振电路的谐振电压的检测电路，以及 比较器电路，用于将由检测电路检测的谐振电压与预定设定值进行比较。 谐振电路的常数根据比较电路的比较结果而改变。

公开(公告)号：US20110209828A1

公开(公告)日：2011-09-01

申请号：US13103666

申请日：2011-05-09

申请人： Ryoji NISHIO ,  Tadamitsu Kanekiyo ,  Yoshiyuki Oota ,  Tsuyoshi Matsumoto

发明人： Ryoji NISHIO ,  Tadamitsu Kanekiyo ,  Yoshiyuki Oota ,  Tsuyoshi Matsumoto

IPC分类号： H01L21/66 ,  C23F1/08

CPC分类号： G06F17/5081 ,  G06F17/5086 ,  H01J37/32082 ,  H01J37/32642 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/6875

摘要： The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.

摘要翻译： 本发明提供一种等离子体处理装置，其能够最小化晶片周边周围的电位分布的不均匀性，并且跨晶片表面提供均匀的工艺。 该装置配备有由电介质，导体或半导体形成的并且施加RF的聚焦环，其设计被优化用于基于澄清用于使晶片上的鞘等离子体界面平坦化的物理条件的设计技术进行处理 以及聚焦环上方的鞘 - 等离子体界面。 聚焦环的表面电压被确定为不低于用于防止由晶片加工引起的反应产物沉积在其上的最小电压。 聚焦环的表面高度，表面电压，材料和结构被优化，使得形成在聚焦环表面上的离子鞘的高度相等或具有在离子鞘高度适当的公差范围内的高度差 形成在晶片表面上。 通过考虑由聚焦环的消耗引起的变化，建立适当的公差范围来实现结构的优化。

公开(公告)号：US20080251206A1

公开(公告)日：2008-10-16

申请号：US12019150

申请日：2008-01-24

申请人： Ryoji NISHIO

发明人： Ryoji NISHIO

IPC分类号： H01L21/306

CPC分类号： H01J37/32165 ,  C23F4/00 ,  H01J37/32082

摘要： A plasma processing apparatus includes a vacuum vessel, first, second and third power supplies first, second and third RF voltages, a first electrode disposed within the vacuum vessel, a second electrode disposed within the vacuum vessel, and a phase control unit for controlling the phase difference of the second and third RF voltages, wherein the second and third RF voltages are of the same frequency. The apparatus further comprises a first phase detector for detecting the phase of the third RF voltage supplied to the first electrode and a second phase detector for detecting the phase of the second RF voltage of the second electrode, a voltage detector, and a phase difference computer which computes a phase difference between the second and third RF voltages based upon an output of the voltage detector.

摘要翻译： 等离子体处理装置包括真空容器，第一，第二和第三电源第一，第二和第三RF电压，设置在真空容器内的第一电极，设置在真空容器内的第二电极，以及用于控制 第二和第三RF电压的相位差，其中第二和第三RF电压具有相同的频率。 该装置还包括用于检测提供给第一电极的第三RF电压的相位的第一相位检测器和用于检测第二电极的第二RF电压的相位的第二相位检测器，电压检测器和相位差计算机 其基于电压检测器的输出来计算第二和第三RF电压之间的相位差。

公开(公告)号：US20080180357A1

公开(公告)日：2008-07-31

申请号：US11676700

申请日：2007-02-20

申请人： Masatoshi KAWAKAMI ,  Ryoji NISHIO

发明人： Masatoshi KAWAKAMI ,  Ryoji NISHIO

IPC分类号： G09G3/28

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32568 ,  H01J37/3266

摘要： A plasma etching apparatus in which discharge instability due to insufficient DC grounding is prevented. A grounded circular conductor is provided as a DC grounding means in a vacuum processing chamber and a control means controls a DC bias power supply according to output value of a current monitor so that the current which flows from the circular conductor to the ground is around 0 A, thereby preventing discharge instability which might be caused by increased plasma space potential.

摘要翻译： 一种等离子体蚀刻装置，其中防止由于DC接地不足导致的放电不稳定。 在真空处理室中设置接地的圆形导体作为直流接地装置，并且控制装置根据电流监视器的输出值控制直流偏置电源，使得从圆形导体流到地面的电流为约0 A，从而防止可能由等离子体空间势增大引起的放电不稳定性。

公开(公告)号：US20120138229A1

公开(公告)日：2012-06-07

申请号：US13020929

申请日：2011-02-04

申请人： Yusaku SAKKA ,  Ryoji NISHIO ,  Tadayoshi KAWAGUCHI

发明人： Yusaku SAKKA ,  Ryoji NISHIO ,  Tadayoshi KAWAGUCHI

IPC分类号： C23F1/08

CPC分类号： H01J37/321 ,  H01J37/32623 ,  H01J37/32642

摘要： The invention provides a plasma processing apparatus having a means for generating a plasma capable of correcting the eccentricity of the plasma diffused above the wafer caused by magnetic field or by vacuum eccentricity, comprising a vacuum processing chamber in which a sample is processed via plasma, a gas supply means for supplying gas into the vacuum processing chamber, a sample stage disposed within the vacuum processing chamber on which the sample is placed, an induction coil disposed outside the vacuum processing chamber, a radio frequency power supply for supplying radio frequency power to the induction coil, a Faraday shield being capacitively coupled with the plasma, and an eccentricity correction means disposed between the induction coil and a dielectric sealing window constituting an upper surface of the vacuum processing chamber, wherein the eccentricity correction means generates a plasma capable of correcting the eccentricity of the plasma.

摘要翻译： 本发明提供了一种等离子体处理装置，其具有用于产生等离子体的装置，其能够校正由磁场或真空偏心引起的在晶片上方扩散的等离子体的偏心，该真空处理室包括通过等离子体处理样品的真空处理室， 用于向真空处理室供应气体的气体供给装置，设置在其上放置样品的真空处理室内的样品台，设置在真空处理室外部的感应线圈，向该真空处理室供给射频电力的射频电源 感应线圈，与等离子体电容耦合的法拉第屏蔽，以及设置在感应线圈和构成真空处理室的上表面的电介质密封窗之间的偏心校正装置，其中偏心校正装置产生能够校正 等离子体的偏心率

公开(公告)号：US20130200042A1

公开(公告)日：2013-08-08

申请号：US13840663

申请日：2013-03-15

申请人： Makoto SATAKE ,  Kenji MAEDA ,  Kenetsu YOKOGAWA ,  Tsutomu TETSUKA ,  Tatehito USUI ,  Ryoji NISHIO

发明人： Makoto SATAKE ,  Kenji MAEDA ,  Kenetsu YOKOGAWA ,  Tsutomu TETSUKA ,  Tatehito USUI ,  Ryoji NISHIO

IPC分类号： G11B5/84

CPC分类号： G11B5/84 ,  C23F4/00 ,  H01F10/14 ,  H01F10/16 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32449 ,  H01L43/12

摘要： In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.

摘要翻译： 在使用等离子体产生气体产生等离子体的真空反应器和含有C和O的气体中处理由例如形成在基板上的Fe，Co或Ni构成的磁膜和含有该磁膜的非挥发性金属， 用于产生等离子体的天线是时间调制的，其中将包含C和O的气体馈送到真空电抗器与时间调制的天线功率同步，使得当天线向真空电抗器供应包含C和O的气体被抑制时 功率高，当天线功率低时，含有C和O的气体进入真空电抗器。

公开(公告)号：US20130160949A1

公开(公告)日：2013-06-27

申请号：US13570471

申请日：2012-08-09

申请人： Yusaku SAKKA ,  Ryoji NISHIO ,  Tadayoshi KAWAGUCHI

发明人： Yusaku SAKKA ,  Ryoji NISHIO ,  Tadayoshi KAWAGUCHI

IPC分类号： H01L21/3065

CPC分类号： H01J37/32119 ,  H01J37/321 ,  H01J37/32651

摘要： A plasma processing apparatus which includes a plasma processing chamber for plasma-processing a sample, an induction antenna disposed outside the plasma processing chamber, a radio-frequency power supply for supplying radio-frequency power to the induction antenna, and a unit for controlling electrostatic capacity including a Faraday shield capacitively coupled with plasma and a dielectric window allowing an induction magnetic field to transmit into the plasma processing chamber is provided; electrostatic capacity between the Faraday shield and the dielectric window at a center portion and electrostatic capacity between the Faraday shield and the dielectric window at an edge portion are controlled.

摘要翻译： 一种等离子体处理装置，包括用于等离子体处理样品的等离子体处理室，设置在等离子体处理室外部的感应天线，向感应天线提供高频电力的射频电源以及用于控制静电的单元 提供了包括与等离子体电容耦合的法拉第屏蔽的容量和允许感应磁场传输到等离子体处理室的介电窗口; 控制法拉第屏蔽和中心部分的电介质窗之间的静电容量以及法拉第屏蔽和边缘部分的电介质窗之间的静电电容。

公开(公告)号：US20130000847A1

公开(公告)日：2013-01-03

申请号：US13209523

申请日：2011-08-15

申请人： Tsutomu TETSUKA ,  Ryoji NISHIO

发明人： Tsutomu TETSUKA ,  Ryoji NISHIO

IPC分类号： H01L21/3065 ,  C23C16/505

CPC分类号： C23C16/507 ,  C23C16/45563 ,  C23C16/45591 ,  H01J37/321 ,  H01J37/32449

摘要： There is provided a plasma processing apparatus enabling uniform plasma processing over the entire surface of a sample, without causing abnormal discharge even when the electromagnetic field strength is strong as in the case of the inductive coupling method. The plasma processing apparatus includes a process chamber, a first dielectric vacuum window, an inductive coil, a radio-frequency power supply, a gas supply unit, and a sample holder. The gas supply unit includes a second dielectric gas guide plate and a third dielectric island member. The second dielectric gas guide plate is located near below the vacuum window, and has a gas inlet port in the center. The third dielectric island member is provided in a gap between the vacuum window and the gas guide plate. The dielectric constant of the third dielectric is higher than the dielectric constant of the first and second dielectrics.

摘要翻译： 提供了一种等离子体处理装置，其能够在样品的整个表面上均匀地进行等离子体处理，即使当电感耦合方法的电磁场强度强时，也不会引起异常放电。 等离子体处理装置包括处理室，第一介电真空窗，感应线圈，射频电源，气体供应单元和样品架。 气体供给单元包括第二电介质气体引导板和第三电介质岛构件。 第二电介质气体引导板位于真空窗口附近，并且在中心具有气体入口。 第三电介质岛构件设置在真空窗和导气板之间的间隙中。 第三电介质的介电常数高于第一和第二电介质的介电常数。

公开(公告)号：US20100230053A1

公开(公告)日：2010-09-16

申请号：US12685688

申请日：2010-01-12

申请人： Ryoji NISHIO

发明人： Ryoji NISHIO

IPC分类号： H01L21/465

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32678

摘要： The invention provides a plasma processing apparatus for subjecting a sample to plasma processing by generating plasma within a vacuum processing chamber 1, wherein multiple sets (7, 7′) of high frequency induction antennas are disposed for forming an induction electric field that rotates in the right direction on an ECR plane of the magnetic field formed within the vacuum processing chamber 1, and plasma is generated via an electron cyclotron resonance (ECR) phenomenon. A Faraday shield 9 for blocking capacitive coupling and realizing inductive coupling between the high frequency induction antenna and plasma receives power supply via a matching box 46 from an output from a Faraday shield high frequency power supply 45 subjected to control of a phase controller 44 based on the monitoring of a phase detector 47-2. Multiple filters 49 short-circuit the high frequency voltage at various portions of the Faraday shield 9 to ground, thereby preventing the generation of an uneven voltage distribution having the same frequency as the plasma generating high frequency.

摘要翻译： 本发明提供一种等离子体处理装置，用于通过在真空处理室1内产生等离子体来对样品进行等离子体处理，其中设置多个高频感应天线的组（7,7'），以形成在 在真空处理室1中形成的磁场的ECR平面上的右方向，并且经由电子回旋共振（ECR）现象产生等离子体。 用于阻止电容耦合并实现高频感应天线和等离子体之间的电感耦合的法拉第屏蔽9通过匹配盒46从经过相位控制器44的控制的法拉第屏蔽高频电源45的输出接收电源，基于 监测相位检测器47-2。 多个滤波器49将法拉第屏蔽9的各个部分的高频电压短路到地，从而防止产生与等离子体产生高频相同频率的不均匀电压分布。