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    Semiconductor structures, DRAM cells and electronic systems
    4.
    发明申请
    Semiconductor structures, DRAM cells and electronic systems 失效
    半导体结构，DRAM单元和电子系统

    公开(公告)号：US20050042824A1

    公开(公告)日：2005-02-24

    申请号：US10945774

    申请日：2004-09-20

    申请人： Shenlin Chen ,  Trung Doan ,  Guy Blalock ,  Lyle Breiner ,  Er-Xuan Ping

    发明人： Shenlin Chen ,  Trung Doan ,  Guy Blalock ,  Lyle Breiner ,  Er-Xuan Ping

    IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/8242 ,  H01L23/58

    CPC分类号： H01L27/10852 ,  H01L27/10817 ,  H01L28/84 ,  Y10S438/964

    摘要： The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the first semiconductor layer. Subsequently, a third semiconductor layer is formed over the second semiconductor layer, and semiconductor-containing seeds are formed over the third semiconductor layer. The seeds are annealed to form the rugged semiconductor-containing surface. The first, second and third semiconductor layers are part of a common stack, and can be together utilized within a storage node of a capacitor construction. The invention also includes semiconductor structures comprising rugged surfaces. The rugged surfaces can be, for example, rugged silicon.

    摘要翻译： 本发明包括形成坚固的含半导体的表面的方法。 在衬底上形成第一半导体层，并且在第一半导体层上形成第二半导体层。 随后，在第二半导体层上形成第三半导体层，并且在第三半导体层上形成含半导体的种子。 将种子退火以形成坚固的含半导体的表面。 第一，第二和第三半导体层是公共堆叠的一部分，并且可以在电容器结构的存储节点内一起使用。 本发明还包括包括粗糙表面的半导体结构。 坚固的表面可以是例如坚固的硅。

    DRAM cells
    5.
    发明申请
    DRAM cells 失效
    DRAM单元

    公开(公告)号：US20060228857A1

    公开(公告)日：2006-10-12

    申请号：US11449433

    申请日：2006-06-07

    申请人： Shenlin Chen ,  Trung Doan ,  Guy Blalock ,  Lyle Breiner ,  Er-Xuan Ping

    发明人： Shenlin Chen ,  Trung Doan ,  Guy Blalock ,  Lyle Breiner ,  Er-Xuan Ping

    IPC分类号： H01L21/8242 ,  H01L21/20

    CPC分类号： H01L27/10852 ,  H01L27/10817 ,  H01L28/84 ,  Y10S438/964

    摘要： The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the first semiconductor layer. Subsequently, a third semiconductor layer is formed over the second semiconductor layer, and semiconductor-containing seeds are formed over the third semiconductor layer. The seeds are annealed to form the rugged semiconductor-containing surface. The first, second and third semiconductor layers are part of a common stack, and can be together utilized within a storage node of a capacitor construction. The invention also includes semiconductor structures comprising rugged surfaces. The rugged surfaces can be, for example, rugged silicon.

    摘要翻译： 本发明包括形成坚固的含半导体的表面的方法。 在衬底上形成第一半导体层，并且在第一半导体层上形成第二半导体层。 随后，在第二半导体层上形成第三半导体层，并且在第三半导体层上形成含半导体的种子。 将种子退火以形成坚固的含半导体的表面。 第一，第二和第三半导体层是公共堆叠的一部分，并且可以在电容器结构的存储节点内一起使用。 本发明还包括包括粗糙表面的半导体结构。 坚固的表面可以是例如坚固的硅。

    Planarization process for semiconductor substrates
    6.
    发明申请
    Planarization process for semiconductor substrates 审中-公开
    半导体衬底的平面化工艺

    公开(公告)号：US20060249723A1

    公开(公告)日：2006-11-09

    申请号：US11484809

    申请日：2006-07-11

    申请人： Trung Doan ,  Guy Blalock ,  Mark Durcan ,  Scott Meikle

    发明人： Trung Doan ,  Guy Blalock ,  Mark Durcan ,  Scott Meikle

    IPC分类号： H01L47/00 ,  C03C15/00

    CPC分类号： H01L21/31053

    摘要： A method of manufacturing semiconductor devices using an improved chemical mechanical planarization process for the planarization of the surfaces of the wafer on which the semiconductor devices are formed. The improved chemical mechanical planarization process includes the formation of a flat planar surface from a deformable coating on the surface of the wafer filling in between the surface irregularities prior to the planarization of the surface through a chemical mechanical planarization process.

    摘要翻译： 使用改进的化学机械平面化工艺制造半导体器件的方法，用于对其上形成半导体器件的晶片的表面进行平坦化。 改进的化学机械平面化处理包括从晶片表面上的可变形涂层形成平坦的平坦表面，其填充在通过化学机械平面化工艺在表面平坦化之前的表面凹凸之间。

    Electronic systems
    7.
    发明申请
    Electronic systems 失效

    公开(公告)号：US20060237763A1

    公开(公告)日：2006-10-26

    申请号：US11449431

    申请日：2006-06-07

    申请人： Shenlin Chen ,  Trung Doan ,  Guy Blalock ,  Lyle Breiner ,  Er-Xuan Ping

    发明人： Shenlin Chen ,  Trung Doan ,  Guy Blalock ,  Lyle Breiner ,  Er-Xuan Ping

    IPC分类号： H01L29/94

    CPC分类号： H01L27/10852 ,  H01L27/10817 ,  H01L28/84 ,  Y10S438/964

    摘要： The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the first semiconductor layer. Subsequently, a third semiconductor layer is formed over the second semiconductor layer, and semiconductor-containing seeds are formed over the third semiconductor layer. The seeds are annealed to form the rugged semiconductor-containing surface. The first, second and third semiconductor layers are part of a common stack, and can be together utilized within a storage node of a capacitor construction. The invention also includes semiconductor structures comprising rugged surfaces. The rugged surfaces can be, for example, rugged silicon.

    RESONATOR FOR THERMO OPTIC DEVICE
    9.
    发明申请
    RESONATOR FOR THERMO OPTIC DEVICE 有权
    热电偶装置谐振器

    公开(公告)号：US20080089647A1

    公开(公告)日：2008-04-17

    申请号：US11951796

    申请日：2007-12-06

    申请人： Gurtej Sandhu ,  Guy Blalock ,  Howard Rhodes

    发明人： Gurtej Sandhu ,  Guy Blalock ,  Howard Rhodes

    IPC分类号： G02B6/26

    CPC分类号： G02B6/132 ,  G02B6/12004 ,  G02B6/12007 ,  G02B6/136 ,  G02F1/011 ,  G02F1/0147 ,  G02F2203/15

    摘要： A resonator for thermo optic devices is formed in the same process steps as a waveguide and is formed in a depression of a lower cladding while the waveguide is formed on a surface of the lower cladding. Since upper surfaces of the resonator and waveguide are substantially coplanar, the aspect ratio, as between the waveguide and resonator in an area where the waveguide and resonator front one another, decreases thereby increasing the bandwidth of the resonator. The depression is formed by photomasking and etching the lower cladding before forming the resonator and waveguide. Pluralities of resonators are also taught that are formed in a plurality of depressions of the lower cladding. To decrease resonator bandwidth, waveguide(s) are formed in the depression(s) of the lower cladding while the resonator is formed on the surface. Thermo optic devices formed with these resonators are also taught.

    摘要翻译： 用于热光器件的谐振器以与波导相同的工艺步骤形成，并且形成在下包层的凹陷中，同时波导形成在下包层的表面上。 由于谐振器和波导的上表面基本上是共面的，因此在波导和谐振器彼此前向的区域中的波导和谐振器之间的纵横比减小，从而增加了谐振器的带宽。 在形成谐振器和波导之前，通过光掩模和蚀刻下部包层形成凹陷。 还教导了形成在下部包层的多个凹部中的多个谐振器。 为了减小谐振器带宽，当在表面上形成谐振器时，在下包层的凹陷中形成波导。 还教导了用这些谐振器形成的热光器件。

    CAPACITOR STRUCTURE
    10.
    发明申请
    CAPACITOR STRUCTURE 审中-公开
    电容结构

    公开(公告)号：US20060258113A1

    公开(公告)日：2006-11-16

    申请号：US11460021

    申请日：2006-07-26

    申请人： Gurtej Sandhu ,  Guy Blalock

    发明人： Gurtej Sandhu ,  Guy Blalock

    IPC分类号： H01L29/94 ,  H01L21/20

    CPC分类号： H01L27/10852 ,  H01L21/02183 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/31637 ,  H01L21/31654 ,  H01L27/10811 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/56 ,  H01L28/65 ,  H01L28/91

    摘要： A capacitor structure and method of forming it are described. In particular, a high-K dielectric oxide is provided as the capacitor dielectric. The high-K dielectric is deposited in a series of thin layers and oxidized in a series of oxidation steps, as opposed to a depositing a single thick layer. Further, at least one of the oxidation steps is less aggressive than the oxidation environment or environments that would be used to deposit the single thick layer. This allows greater control over oxidizing the dielectric and other components beyond the dielectric.

    摘要翻译： 描述电容器结构及其形成方法。 特别地，提供高K电介质氧化物作为电容器电介质。 与沉积单个厚层相反，高K电介质沉积在一系列薄层中并在一系列氧化步骤中被氧化。 此外，至少一个氧化步骤比用于沉积单个厚层的氧化环境或环境更不具有侵蚀性。 这允许更好地控制电介质和超过电介质的其它组件的氧化。