公开(公告)号：US09831387B2

公开(公告)日：2017-11-28

申请号：US14738490

申请日：2015-06-12

申请人： HIPHOTON CO., LTD.

发明人： Chen-Fu Chu ,  Chen-Hsien Chu

IPC分类号： H01L33/32 ,  H01L25/075 ,  H01L27/15 ,  H01L33/62 ,  H01L33/00 ,  H01L33/50

CPC分类号： H01L33/32 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/504 ,  H01L33/508 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/8192 ,  H01L2933/0041

摘要： The invention discloses a light engine array comprises a multiple light engines arranged into an array, multiple dams located on a first surface of the light engines; and the dams combined a dam array.

公开(公告)号：US10910350B2

公开(公告)日：2021-02-02

申请号：US14720316

申请日：2015-05-22

申请人： HIPHOTON CO., LTD.

发明人： Chen-Fu Chu ,  Chen-Hsien Chu

IPC分类号： H01L25/075 ,  H01L33/50 ,  H01L23/00 ,  H01L33/44 ,  H01L33/54

摘要： A structure of a semiconductor array comprises multiple semiconductor units, an isolation layer and a decomposed or buffer unit. Multiple semiconductor units combined the semiconductor array. The isolation layer coated each semiconductor unit. The decomposed or buffer unit coated the isolation layer and filled between each semiconductor unit to enhance structure of the semiconductor units. Wherein, the isolation layer protected by edge of the semiconductor units and the decomposed or buffer unit.

公开(公告)号：US10205055B2

公开(公告)日：2019-02-12

申请号：US15793087

申请日：2017-10-25

申请人： HIPHOTON CO., LTD

发明人： Chen-Fu Chu ,  Chen-Hsien Chu

IPC分类号： H01L33/32 ,  H01L25/075 ,  H01L27/15 ,  H01L33/62 ,  H01L33/00 ,  H01L33/50 ,  H01L25/16 ,  H01L33/38 ,  H01L33/58

摘要： The invention discloses a light engine array having at least an anode and a cathode comprising: a first type semiconductor layer; an active layer; and a second type semiconductor layer; a cathode electrode has a conductive metal layer in electrical contact with a portion of the first type semiconductor layer, and the second type semiconductor layer to form a short circuit structure in a common cathode region; and an anode electrode has the conductive metal layer and coupled to a portion of the first type semiconductor layer; wherein, the anode electrode is electrically isolated with the active layer and the second type semiconductor layer in a sub-pixel region.