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公开(公告)号:US09941430B2
公开(公告)日:2018-04-10
申请号:US15442113
申请日:2017-02-24
Applicant: HITACHI, LTD.
Inventor: Aleksey Andreev , David Williams , Ryuta Tsuchiya , Yuji Suwa
IPC: H01L29/06 , H01L31/0352 , H01L31/028 , H01L31/024 , H01L33/06 , H01L33/34 , H01L33/64 , H01L31/112 , H01L33/00 , G06N99/00 , B82Y10/00 , B82Y20/00
CPC classification number: H01L31/035218 , B82Y10/00 , B82Y15/00 , B82Y20/00 , B82Y30/00 , G06N99/002 , H01L29/0649 , H01L29/127 , H01L29/66977 , H01L29/7613 , H01L31/024 , H01L31/028 , H01L31/112 , H01L33/0041 , H01L33/06 , H01L33/34 , H01L33/64 , Y10S977/774 , Y10S977/814 , Y10S977/933 , Y10S977/95 , Y10S977/954
Abstract: A silicon-based quantum dot device (1) is disclosed. The device comprises a substrate (8) and a layer (7) of silicon or silicon-germanium supported on the substrate which is configured to provide at least one quantum dot (51, 52: FIG. 5). The layer of silicon or silicon-germanium has a thickness of no more than ten monolayers. The layer of silicon or silicon-germanium may have a thickness of no more than eight or five monolayers.
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公开(公告)号:US10055690B2
公开(公告)日:2018-08-21
申请号:US15631548
申请日:2017-06-23
Applicant: HITACHI, LTD.
Inventor: Aleksey Andreev , David Williams
IPC: G06N99/00
CPC classification number: G06N10/00
Abstract: A method of reducing quantum leakage in a qubit device which includes receiving a set of energy level values for a multi-level system which includes first and second working levels |0>, |1> which provide a qubit, and at least one other level |2>, and performing an iteration of determining quantum leakage from at least one of the first and second working levels to the at least one other level for a quantum operation A for at least one pulse wherein each pulse has a respective pulse duration, determining whether the quantum leakage is greater than or equal to a threshold value; and, based on the quantum leakage being greater than or equal to the threshold value, changing the duration of at least one of the at least one pulse.
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