公开(公告)号：US10043963B2

公开(公告)日：2018-08-07

申请号：US14761414

申请日：2013-01-31

申请人： Hitachi, Ltd.

发明人： Shin Yabuuchi ,  Jun Hayakawa ,  Yosuke Kurosaki ,  Akinori Nishide ,  Yuji Suwa

IPC分类号： H01L35/26 ,  H01L35/32 ,  H01L35/34 ,  H01L35/30 ,  H01L35/00

摘要： In order to provide a thermoelectric conversion element which has a high Seebeck coefficient, a low thermal conductivity, and a high performance, even if the material system that has a low environmental load and can reduce the cost is used, the thermoelectric conversion element in which lattice points are classified into two or more kinds (A site and B site), lattices of which the kinds are different are connected to each other, the numbers of lattices of which the kinds are different are different (A site: 2, and B site: 1), and a lattice structure is configured by arranging nanoparticles or semiconductor quantum dots, includes areas of which conductivity types are different.

公开(公告)号：US09941430B2

公开(公告)日：2018-04-10

申请号：US15442113

申请日：2017-02-24

申请人： HITACHI, LTD.

发明人： Aleksey Andreev ,  David Williams ,  Ryuta Tsuchiya ,  Yuji Suwa

IPC分类号： H01L29/06 ,  H01L31/0352 ,  H01L31/028 ,  H01L31/024 ,  H01L33/06 ,  H01L33/34 ,  H01L33/64 ,  H01L31/112 ,  H01L33/00 ,  G06N99/00 ,  B82Y10/00 ,  B82Y20/00

CPC分类号： H01L31/035218 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  B82Y30/00 ,  G06N99/002 ,  H01L29/0649 ,  H01L29/127 ,  H01L29/66977 ,  H01L29/7613 ,  H01L31/024 ,  H01L31/028 ,  H01L31/112 ,  H01L33/0041 ,  H01L33/06 ,  H01L33/34 ,  H01L33/64 ,  Y10S977/774 ,  Y10S977/814 ,  Y10S977/933 ,  Y10S977/95 ,  Y10S977/954

摘要： A silicon-based quantum dot device (1) is disclosed. The device comprises a substrate (8) and a layer (7) of silicon or silicon-germanium supported on the substrate which is configured to provide at least one quantum dot (51, 52: FIG. 5). The layer of silicon or silicon-germanium has a thickness of no more than ten monolayers. The layer of silicon or silicon-germanium may have a thickness of no more than eight or five monolayers.

公开(公告)号：US10338046B2

公开(公告)日：2019-07-02

申请号：US15760777

申请日：2016-01-15

申请人： HITACHI, LTD.

发明人： Masahiko Ando ,  Sanato Nagata ,  Shirun Ho ,  Yuji Suwa ,  Mitsuharu Tai ,  Kenzo Kurotsuchi ,  Hiromasa Takahashi ,  Norifumi Kameshiro ,  Seiichi Suzuki

IPC分类号： C12M1/34 ,  G01N27/27 ,  G01N33/00 ,  G01N27/414

摘要： An object of the present invention is to provide an artificial olfactory sensing system capable of sniffing out various odors highly sensitively.The artificial olfactory sensing system includes: plural sensor cells on a lipid membrane of each of which olfactory receptors have developed; and plural ion-sensitive field-effect transistors (ISFETs) that correspondingly exist to the sensor cells on a one-on-one basis. A response signal showing that each of the olfactory receptors of each of the sensor cells has recognized an odor molecule is converted into an electric signal by an ISFET corresponding to each of the sensor cells.