公开(公告)号：US11034860B2

公开(公告)日：2021-06-15

申请号：US16493409

申请日：2018-03-02

Applicant: HITACHI CHEMICAL COMPANY, LTD.

Inventor： Masayuki Hanano ,  Kouji Mishima ,  Naomi Watanabe

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/3105

Abstract: A polishing agent containing abrasive grains and water, in which the abrasive grains contain silica particles, an average particle diameter Rave of the abrasive grains is 50 nm or more, a ratio Rave/Rmin of the average particle diameter Rave to an average minor diameter Rmin of the abrasive grains is 1.0 to 2.0, and a zeta potential of the abrasive grains in the polishing agent is positive.

公开(公告)号：US10283373B2

公开(公告)日：2019-05-07

申请号：US15324578

申请日：2015-07-08

Applicant: HITACHI CHEMICAL COMPANY, LTD.

Inventor： Masahiro Sakashita ,  Naomi Watanabe ,  Masayuki Hanano ,  Kouji Mishima

IPC: H01L21/321 ,  C09G1/02 ,  H01L23/532 ,  B24B37/04 ,  B24B37/00 ,  H01L21/768 ,  C09K13/06 ,  H01L21/3105

Abstract: An embodiment of the present invention relates to a CMP polishing liquid used for polishing a polishing target surface having at least a cobalt-containing portion and a metal-containing portion that contains a metal other than cobalt, wherein the CMP polishing liquid contains polishing particles, a metal corrosion inhibitor and water, and has a pH of 4.0 or less, and when the corrosion potential EA of cobalt and the corrosion potential EB of the metal are measured in the CMP polishing liquid, the absolute value of the corrosion potential difference EA−EB between the corrosion potential EA and the corrosion potential EB is 0˜300 mV.

公开(公告)号：US10946494B2

公开(公告)日：2021-03-16

申请号：US15556824

申请日：2016-03-08

Applicant: Hitachi Chemical Company, Ltd.

Inventor： Masayuki Hanano ,  Masaya Nishiyama ,  Yutaka Goh ,  Haruaki Sakurai ,  Tomohiro Iwano

IPC: B24B37/00 ,  C09G1/02 ,  B24B37/04 ,  C09K3/14 ,  H01L21/311 ,  H01L21/3105 ,  B24B37/005

Abstract: A polishing agent for polishing a resin comprises abrasive grains, a water-soluble polymer having an ether bond, an organic solvent and water, wherein the abrasive grains have a positive charge in the polishing agent and an average particle diameter of the abrasive grains is larger than 20 nm.

公开(公告)号：US11649377B2

公开(公告)日：2023-05-16

申请号：US16638493

申请日：2017-08-14

Applicant: HITACHI CHEMICAL COMPANY, LTD.

Inventor： Masayuki Hanano ,  Toshio Takizawa

IPC: C09G1/02 ,  C09K13/06 ,  H01L21/306 ,  H01L21/3105

CPC classification number: C09G1/02 ,  C09K13/06 ,  H01L21/31053 ,  H01L21/30625

Abstract: Provided is a CMP polishing liquid used for removing a part of an insulating portion of a base substrate, which includes a substrate, a stopper provided on one surface of the substrate, and the insulating portion provided on a surface of the stopper opposite to the substrate, by CMP to expose the stopper, the polishing liquid containing: abrasive grains containing cerium; a nonionic water-soluble compound A; a polymer compound B having at least one selected from the group consisting of carboxylic acid groups and carboxylate groups; a basic pH adjusting agent which is optionally contained; and water, in which a content of the basic pH adjusting agent is less than 1.3×10−2 mol/kg based on the total mass of the polishing liquid.

公开(公告)号：US10119049B2

公开(公告)日：2018-11-06

申请号：US15736221

申请日：2015-06-17

Applicant: HITACHI CHEMICAL COMPANY, LTD.

Inventor： Makoto Mizutani ,  Satoyuki Nomura ,  Haruaki Sakurai ,  Masaya Nishiyama ,  Masayuki Hanano

IPC: C09G1/02 ,  B24B37/00 ,  B24B37/013 ,  C09K3/14 ,  H01L21/304 ,  B24B37/04 ,  H01L21/3105

Abstract: A polishing agent for chemomechanically polishing a base having a carbon-based material and an insulating material to remove at least a part of the carbon-based material, the carbon-based material having a carbon content of 60 to 95 atm % as measured by X-ray photoelectron spectroscopy, the polishing agent comprising: an abrasive grain comprising silica; an allylamine-based polymer; and water, wherein a mass ratio of a content of the allylamine-based polymer with respect to a content of the abrasive grain is 0.002 to 0.400, and the abrasive grain has a positive charge in the polishing agent.

公开(公告)号：US20180043497A1

公开(公告)日：2018-02-15

申请号：US15556824

申请日：2016-03-08

Applicant: Hitachi Chemical Company, Ltd.

Inventor： Masayuki Hanano ,  Masaya Nishiyama ,  Yutaka Goh ,  Haruaki Sakurai ,  Tomohiro Iwano

IPC: B24B37/04 ,  C09K3/14 ,  C09G1/02

CPC classification number: B24B37/044 ,  B24B37/00 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1436 ,  H01L21/31058 ,  H01L21/31144

Abstract: A polishing agent for polishing a resin comprises abrasive grains, a water-soluble polymer having an ether bond, an organic solvent and water, wherein the abrasive grains have a positive charge in the polishing agent and an average particle diameter of the abrasive grains is larger than 20 nm.