公开(公告)号：US20160240346A1

公开(公告)日：2016-08-18

申请号：US15019987

申请日：2016-02-10

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroshi OBA ,  Yasuhiko SUGIYAMA ,  Mamoru OKABE

IPC: H01J37/08 ,  H05H1/30 ,  H01J37/06 ,  H05H1/46

CPC classification number: H01J37/08 ,  H01J2237/006 ,  H01J2237/061 ,  H05H1/30 ,  H05H1/46 ,  H05H2001/4667

Abstract: A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; an insulation member provided in the gas introduction chamber; a plasma generation chamber connected to the gas introduction chamber; a coil that is wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; and an electrode arranged at a boundary between the gas introduction chamber and the plasma generation chamber and having a plurality of through-holes formed therein, wherein a size of the through-holes is smaller than a length of a plasma sheath.

Abstract translation: 等离子体离子源包括：引入原料气体的气体导入室; 绝缘部件，设置在所述气体导入室中; 连接到气体导入室的等离子体产生室; 线圈，其沿着等离子体产生室的外周卷绕并施加高频电力; 以及布置在气体导入室和等离子体生成室之间的边界处并且形成有多个通孔的电极，其中通孔的尺寸小于等离子体护套的长度。

公开(公告)号：US20160240354A1

公开(公告)日：2016-08-18

申请号：US15019990

申请日：2016-02-10

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroshi OBA ,  Yasuhiko SUGIYAMA ,  Mamoru OKABE

IPC: H01J37/32 ,  H01J37/20

CPC classification number: H01J37/32522 ,  H01J27/16 ,  H01J37/06 ,  H01J37/08 ,  H01J37/20 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32568 ,  H01J37/32807 ,  H01J2237/0815 ,  H01J2237/31749

Abstract: A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; a plasma generation chamber connected to the gas introduction chamber and made of a dielectric material; a coil wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; an envelope surrounding the gas introduction chamber, the plasma generation chamber and the coil; and insulating liquid filled inside the gas introduction chamber, the plasma generation chamber and the envelope to immerse the coil and having an dielectric strength voltage relatively greater than that of the envelope and the same dielectric dissipation factor as the plasma generation chamber.

Abstract translation: 等离子体离子源包括：引入原料气体的气体导入室; 连接到气体导入室并由介电材料制成的等离子体产生室; 沿着等离子体产生室的外周缠绕并施加高频电力的线圈; 围绕气体导入室的包络线，等离子体产生室和线圈; 以及填充在气体导入室，等离子体产生室和外壳内部的绝缘液体，以使线圈浸没，并且其介电强度电压相对大于封套的绝缘强度电压和与等离子体产生室相同的介电损耗因数。