公开(公告)号：US20200219243A1

公开(公告)日：2020-07-09

申请号：US16638033

申请日：2017-08-23

Applicant: Hitachi High-Technologies Corporation

Inventor： Takeyoshi OHASHI ,  Atsuko SHINTANI ,  Masami IKOTA ,  Kazuhisa HASUMI

IPC: G06T7/00 ,  G06T7/60 ,  G01N23/22 ,  G01B15/04

Abstract: An object of the invention is to quantitatively evaluate crystal growth amount in a wide range from an undergrowth state to an overgrowth state with nondestructive inspection. By using a plenty of image feature values such as pattern brightness, a pattern area and a pattern shape which are extracted from an SEM image, and depending on whether brightness inside a pattern is lower than brightness outside the pattern (401), undergrowth and overgrowth is determined (402, 405). Based on a brightness difference or the pattern area, a growth amount index or a normality index of crystal growth in a concave pattern such as a hole pattern or a trench pattern is calculated (404, 407).

公开(公告)号：US20180308228A1

公开(公告)日：2018-10-25

申请号：US15758630

申请日：2015-09-10

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Atsuko YAMAGUCHI ,  Masami IKOTA ,  Kazuhisa HASUMI

IPC: G06T7/00 ,  G01N23/2251 ,  G01N21/956 ,  H01L21/67 ,  G03F1/44

Abstract: In order to provide an inspection device capable of quantitatively evaluating a pattern related to a state of a manufacturing process or performance of an element, it is assumed that an inspection device includes an image analyzing unit that analyzes a top-down image of a sample in which columnar patterns are formed at a regular interval, in which an image analyzing unit 240 includes a calculation unit 243 that obtains a major axis, a minor axis, an eccentricity, and an angle formed by a major axis direction with an image horizontal axis direction of the approximated ellipse as a first index and a Cr calculation unit 248 that obtains a circumferential length of an outline of a columnar pattern on the sample and a value obtained by dividing a square of the circumferential length by a value obtained by multiplying an area surrounded by the outline and 4π as a second index.

公开(公告)号：US20190244783A1

公开(公告)日：2019-08-08

申请号：US16261784

申请日：2019-01-30

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takeyoshi OHASHI ,  Masami IKOTA

IPC: H01J37/22 ,  H01J37/28 ,  G06T7/00

CPC classification number: H01J37/222 ,  G06T7/0004 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/28 ,  H01J2237/24564 ,  H01J2237/2801

Abstract: An inspection system is provided that includes a microscope that scans a sample with a beam that is an incident electron beam, and an image processing device that controls the microscope. The image processing device performs: an acquisition process of acquiring a plurality of images relating to brightness based on an amount of a signal electron detected from the sample a result of controlling the microscope according to a s and irradiating the sample with the beam, the plurality of image acquisition condition being multiple combinations of different irradiation amounts of the beam per unit length; a first generation process of generating a plurality of actually measured profiles that show a relationship between an irradiation position of the beam in the sample and the brightness of the sample, based on the plurality of images acquired in the acquisition process; and an output process of outputting an electrical contact characteristic of the sample based on the plurality of actually measured profiles generated in the first generation process.

公开(公告)号：US20150354947A1

公开(公告)日：2015-12-10

申请号：US14759798

申请日：2014-01-10

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takanori KONDO ,  Takahiro JINGU ,  Masaaki ITO ,  Masami IKOTA

IPC: G01B11/30 ,  G01B11/24 ,  G01Q60/24

CPC classification number: G01B11/303 ,  G01B11/24 ,  G01B2210/56 ,  G01Q60/24 ,  H01L22/12 ,  H01L22/20

Abstract: Patent Document 1 discloses height measurement using an atomic force microscope (AFM) as means for measuring micro roughness. However, since it takes time for this measurement, it is difficult to apply a single display to inspection of all wafers and the entire surface thereof in an in-line manner. The invention provides a technique that estimates micro roughness from a total sum of detection signals from plural detection systems and signal ratios, using a light scattering method. The technique rotates and translates a wafer at high speed to measure the entire surface of the wafer with high throughput. Further, the relationship between the micro roughness and the intensity of scattered light varies according to a material of the wafer and a film thickness thereof. Further, calibration of an apparatus is also necessary. In consideration of this point, the invention provides a technique that has a function of correcting an optically acquired detection result using a sample which is substantially the same as a measurement target and makes the optically acquired detection result come close to a result measured by an apparatus (for example, an AFM) using a different measurement principle.

Abstract translation: 专利文献1公开了使用原子力显微镜（AFM）作为测量微观粗糙度的装置的高度测量。 然而，由于该测量需要时间，因此难以以一个一行的方式将单个显示器应用于所有晶片及其整个表面的检查。 本发明提供一种使用光散射法从多个检测系统和信号比的总和的总和估计微粗糙度的技术。 该技术高速旋转和平移晶片，以高产量测量晶片的整个表面。 此外，微观粗糙度和散射光的强度之间的关系根据晶片的材料和膜的厚度而变化。 此外，设备的校准也是必需的。 考虑到这一点，本发明提供了一种技术，其具有使用与测量目标基本相同的样本来校正光学获取的检测结果的功能，并且使光学获取的检测结果接近由装置测量的结果 （例如，AFM）使用不同的测量原理。

公开(公告)号：US20170030712A1

公开(公告)日：2017-02-02

申请号：US15215756

申请日：2016-07-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Kazuhisa HASUMI ,  Masami IKOTA

IPC: G01B15/02 ,  G01B15/06

CPC classification number: G01B15/06 ,  G01B15/04 ,  G01B2210/56 ,  H01J37/26 ,  H01L22/12 ,  H01L22/20

Abstract: A pattern measurement method and measurement apparatus are provided that appropriately evaluate the deformation of a pattern occurring due to a micro loading effect. In order to achieve the above-mentioned object, there are provided pattern measurement method and apparatus that measure a dimension of a pattern formed on a sample. In the pattern measurement method and apparatus, distances between a reference pattern and a plurality of adjacent patterns adjacent to the reference pattern or inner diameters of the reference pattern in a plurality of directions are measured, and the measurement results of the plurality of distances between the reference pattern and the adjacent patterns or the measurement results of the inner diameters of the reference pattern in the plurality of directions are classified according to distances between the reference pattern and the adjacent patterns or directions of the patterns adjacent to the reference pattern.

Abstract translation: 提供了一种图案测量方法和测量装置，其适当地评估由于微负载效应而发生的图案的变形。 为了实现上述目的，提供了测量样品上形成的图案的尺寸的图案测量方法和装置。 在图案测量方法和装置中，测量参考图案和与参考图案相邻的多个相邻图案或多个方向上的参考图案的内径之间的距离，并且测量多个距离之间的距离 参考图案和相邻图案或多个方向上的参考图案的内径的测量结果根据参考图案与与参考图案相邻的图案的相邻图案或方向之间的距离来分类。

公开(公告)号：US20150357158A1

公开(公告)日：2015-12-10

申请号：US14760322

申请日：2014-01-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Makoto SUZUKI ,  Satoru YAMAGUCHI ,  Kei SAKAI ,  Miki ISAWA ,  Satoshi TAKADA ,  Kazuhisa HASUMI ,  Masami IKOTA

IPC: H01J37/30 ,  H01J37/28

CPC classification number: H01J37/30 ,  H01J37/28 ,  H01J2237/2814 ,  H01J2237/2817 ,  H01J2237/3175

Abstract: An object of the present invention is to provide a method for pattern measurement and a charged particle radiation device in which a pattern formed by using a DSA technique can be very precisely measured and inspected. According to an aspect for achieving the object, a method for pattern measurement or a charged particle radiation device for realizing the measurement is proposed as follows. A charged particle is radiated to a polymer compound used for a self-organization lithography technique, and a specific polymer is considerably contracted as compared to the other polymer among multiple polymers forming the polymer compound. Thereafter, dimensions between multiple edges of the other polymer are measured, based on a signal obtained by scanning a region including the other polymer with the charged particle beam.

Abstract translation: 本发明的目的是提供一种用于图案测量的方法和带电粒子辐射装置，其中可以非常精确地测量和检查使用DSA技术形成的图案。 根据实现该目的的方面，提出了用于图案测量的方法或用于实现测量的带电粒子辐射装置如下。 将带电粒子照射到用于自组织光刻技术的聚合物化合物中，与形成高分子化合物的多种聚合物中的其它聚合物相比，特定聚合物显着收缩。 此后，基于通过用带电粒子束扫描包括其它聚合物的区域而获得的信号来测量另一聚合物的多个边缘之间的尺寸。