公开(公告)号：US20150348748A1

公开(公告)日：2015-12-03

申请号：US14760259

申请日：2014-01-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yuzuru MIZUHARA ,  Miki ISAWA ,  Minoru YAMAZAKI ,  Hitoshi TAMURA ,  Hideyuki KAZUMI

IPC: H01J37/244 ,  H01J37/26 ,  H01J37/147 ,  H01J37/28

CPC classification number: H01J37/268 ,  H01J37/1472 ,  H01J37/244 ,  H01J37/265 ,  H01J37/266 ,  H01J37/28 ,  H01J37/3178 ,  H01J2237/24564 ,  H01J2237/28 ,  H01J2237/2809

Abstract: An object of the present invention is to provide a method and an apparatus capable of measuring a potential of a sample surface by using a charged particle beam, or of detecting a compensation value of a variation in an apparatus condition which changes due to sample charging, by measuring a sample potential caused by irradiation with the charged particle beam. In order to achieve the object, a method and an apparatus are provided in which charged particle beams (2(a), 2(b)) emitted from a sample (23) are deflected by a charged particle deflector (33) in a state in which the sample (23) is irradiated with a charged particle beam (1), and information regarding a sample potential is detected by using a signal obtained at that time.

Abstract translation: 本发明的目的是提供一种能够通过使用带电粒子束来测量样品表面的电位或检测由于样品充电而发生变化的装置状态的变化的补偿值的方法和装置， 通过测量由带电粒子束的照射引起的样品电位。 为了实现该目的，提供了一种方法和装置，其中从样品（23）发射的带电粒子束（2（a），2（b））由带电粒子偏转器（33）在某种状态下偏转 其中样品（23）被带电粒子束（1）照射，并且通过使用当时获得的信号来检测关于样品电位的信息。

公开(公告)号：US20150357158A1

公开(公告)日：2015-12-10

申请号：US14760322

申请日：2014-01-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Makoto SUZUKI ,  Satoru YAMAGUCHI ,  Kei SAKAI ,  Miki ISAWA ,  Satoshi TAKADA ,  Kazuhisa HASUMI ,  Masami IKOTA

IPC: H01J37/30 ,  H01J37/28

CPC classification number: H01J37/30 ,  H01J37/28 ,  H01J2237/2814 ,  H01J2237/2817 ,  H01J2237/3175

Abstract: An object of the present invention is to provide a method for pattern measurement and a charged particle radiation device in which a pattern formed by using a DSA technique can be very precisely measured and inspected. According to an aspect for achieving the object, a method for pattern measurement or a charged particle radiation device for realizing the measurement is proposed as follows. A charged particle is radiated to a polymer compound used for a self-organization lithography technique, and a specific polymer is considerably contracted as compared to the other polymer among multiple polymers forming the polymer compound. Thereafter, dimensions between multiple edges of the other polymer are measured, based on a signal obtained by scanning a region including the other polymer with the charged particle beam.

Abstract translation: 本发明的目的是提供一种用于图案测量的方法和带电粒子辐射装置，其中可以非常精确地测量和检查使用DSA技术形成的图案。 根据实现该目的的方面，提出了用于图案测量的方法或用于实现测量的带电粒子辐射装置如下。 将带电粒子照射到用于自组织光刻技术的聚合物化合物中，与形成高分子化合物的多种聚合物中的其它聚合物相比，特定聚合物显着收缩。 此后，基于通过用带电粒子束扫描包括其它聚合物的区域而获得的信号来测量另一聚合物的多个边缘之间的尺寸。

公开(公告)号：US20180181009A1

公开(公告)日：2018-06-28

申请号：US15903536

申请日：2018-02-23

Applicant: Hitachi High-Technologies Corporation

Inventor： Takumichi SUTANI ,  Miki ISAWA ,  Shunsuke KOSHIHARA ,  Akiyuki SUGIYAMA

IPC: G03F7/20 ,  H01L21/033 ,  B82Y40/00

CPC classification number: G03F7/70491 ,  B82Y40/00 ,  H01L21/0337

Abstract: An image processor, a method for generating a pattern using self-organizing lithographic techniques, and a computer program are provided to achieve image processing suitable for addressing a sample generated by patterning using Directed Self-Assembly (DSA), and the processor, method, and computer program are characterized in that a template for addressing is prepared on the basis of guide pattern data used for patterning by DSA. The above configuration makes it possible to provide an addressing pattern suitable for visual field positioning in measuring or inspecting a pattern formed through the patterning process using DSA.

公开(公告)号：US20160320182A1

公开(公告)日：2016-11-03

申请号：US15104574

申请日：2014-11-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Satoru YAMAGUCHI ,  Norio HASEGAWA ,  Akiyuki SUGIYAMA ,  Miki ISAWA ,  Akihiro ONIZAWA ,  Ryuji MITSUHASHI

IPC: G01B15/00 ,  H01L21/033 ,  H01L21/66 ,  H01J37/28

CPC classification number: G01B15/00 ,  G01B2210/56 ,  H01J37/28 ,  H01J2237/2817 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L22/12

Abstract: The purpose of the present invention is to provide a pattern measurement device which adequately evaluates a pattern formed by means of a patterning method for forming a pattern that is not in a photomask. In order to fulfil the purpose, the present invention suggests a pattern measurement device provided with a computation device for measuring the dimensions between patterns formed on a sample, wherein: the centroid of the pattern formed on the sample is extracted from data to be measured obtained by irradiating beams; a position alignment process is executed between the extracted centroid and measurement reference data in which a reference functioning as the measurement start point or measurement end point is set; and the dimensions between the measurement start point or the measurement end point of the measurement reference data, which was subjected to position alignment, and the edge or the centroid of the pattern contained in the data to be measured is measured.

Abstract translation: 本发明的目的是提供一种图案测量装置，其适当地评估通过用于形成不在光掩模中的图案的图案化方法形成的图案。 为了实现该目的，本发明提出了一种图案测量装置，其具有用于测量在样品上形成的图案之间的尺寸的计算装置，其中：从获得的待测数据中提取形成在样品上的图案的质心 通过照射光束; 在提取的质心和测量参考数据之间执行位置对准过程，其中设置用作测量开始点或测量终点的参考点; 并且测量经受位置对准的测量参考数据的测量开始点或测量结束点之间的尺寸以及包含在要测量的数据中的图案的边缘或质心。

公开(公告)号：US20200098543A1

公开(公告)日：2020-03-26

申请号：US16310830

申请日：2016-07-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Miki ISAWA ,  Ayumi DOI ,  Kazuhisa HASUMI

IPC: H01J37/28 ,  H01J37/22 ,  G01N23/2251 ,  G06T7/00

Abstract: Provided is a pattern evaluation device with which measurement or inspection conditions, supplied for the measurement and inspection of a replica produced by transferring a pattern for a semiconductor wafer or the like, can be easily set, and with which recipes can be easily generated, when measurement and inspection conditions for a semiconductor wafer or the like and recipes in which these conditions are stored have been prepared in advance. The pattern evaluation device in which a pattern formed on a sample is evaluated on the basis of image data or signal waveforms obtained on the basis of beam irradiation or probe scanning of the sample, wherein the device conditions for evaluating a semiconductor wafer are converted to device conditions for evaluating a replica obtained by transferring a semiconductor wafer, and the converted device conditions are used to evaluate the replica.

公开(公告)号：US20160313266A1

公开(公告)日：2016-10-27

申请号：US15103894

申请日：2014-11-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Akiyuki SUGIYAMA ,  Miki ISAWA ,  Satoru YAMAGUCHI ,  Motonobu HOMMI

IPC: G01N23/22 ,  G01N23/225

CPC classification number: G01N23/2206 ,  G01B15/00 ,  G01B2210/56 ,  G01N23/2251 ,  G01N2223/071 ,  G01N2223/302 ,  G01N2223/306 ,  G01N2223/6116 ,  G03F7/0002

Abstract: The purpose of the present invention is to provide a pattern measurement device for quantitatively evaluating a pattern formed using a directed self-assembly (DSA) method with high accuracy. The present invention is a pattern measurement device for measuring distances between patterns formed in a sample, wherein the centroids of a plurality of patterns included in an image are determined; the inter-centroid distances, and the like, of the plurality of centroids are determined; and on the basis of the inter-centroid distances, and the like, of the plurality of centroids, a pattern meeting a specific condition is distinguished from patterns different from the pattern meeting the specific condition or information is calculated about the number of the patterns meeting the specific condition, the size of an area including the patterns meeting the specific condition, and the number of imaginary lines between the patterns meeting the specific condition.

Abstract translation: 本发明的目的是提供一种用于使用定向自组装（DSA）方法以高精度定量评估图案的图案测量装置。 本发明是一种图形测量装置，用于测量在样本中形成的图案之间的距离，其中确定包括在图像中的多个图案的质心; 确定多个质心的质心距离等; 并且基于多个质心之间的像素间距等，将符合特定条件的图案区别于与满足特定条件的图案不同的图案，或者计算关于图案会议次数的信息 特定条件，包括满足特定条件的图案的区域的尺寸以及满足特定条件的图案之间的虚线数量。

公开(公告)号：US20150357153A1

公开(公告)日：2015-12-10

申请号：US14410999

申请日：2013-06-10

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroshi MAKINO ,  Hideyuki KAZUMI ,  Minoru YAMAZAKI ,  Yuzuru MIZUHARA ,  Miki ISAWA

IPC: H01J37/147 ,  H01J37/28

CPC classification number: H01J37/147 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/24485 ,  H01J2237/2449 ,  H01J2237/2806 ,  H01J2237/281

Abstract: An objective of the present invention is to provide a charged particle beam device with which information based on a charged particle which is discharged from a bottom part of high-aspect structure is revealed more than with previous technology. To achieve the objective, proposed is a charged particle beam device comprising: a first orthogonal electromagnetic field generator which deflects charged particles which are discharged from a material; a second orthogonal electromagnetic field generator which further deflects the charged particles which are deflected by the first orthogonal electromagnetic field generator; an aperture forming member having a charged particle beam pass-through aperture; and a third orthogonal electromagnetic field generator which deflects the charged particles which have passed through the aperture forming member.

Abstract translation: 本发明的目的是提供一种带电粒子束装置，与先前的技术相比，显示出从高方面结构的底部排出的基于带电粒子的信息。 为了实现该目的，提出了一种带电粒子束装置，包括：第一正交电磁场发生器，其偏转从材料排出的带电粒子; 第二正交电磁场发生器，其进一步偏转由第一正交电磁场发生器偏转的带电粒子; 具有带电粒子束直通孔的孔形成构件; 以及第三正交电磁场发生器，其使穿过孔形成构件的带电粒子偏转。

公开(公告)号：US20140014836A1

公开(公告)日：2014-01-16

申请号：US13939767

申请日：2013-07-11

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Miki ISAWA ,  Minoru YAMAZAKI ,  Yuzuru MIZUHARA ,  Hiroshi MAKINO ,  Hideyuki KAZUMI

IPC: G01N23/225

CPC classification number: G01N23/2258 ,  G01B2210/56 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/1508 ,  H01J2237/2448 ,  H01J2237/281 ,  H01J2237/2816

Abstract: The charged particle beam apparatus having an opening formation member formed with an opening for passage of a charged particle beam emitted from a charged particle source, and either a detector adapted to detect charged particles having passed through the passage opening or a detector adapted to detect charged particles resulting from bombardment on another member of the charged particles having passed through the opening, comprises an aligner for aligning charged particles discharged from the sample and a control unit for controlling the aligner, wherein the control unit controls the aligner to cause it to shift trajectories of the charged particles discharged from the sample so that length measurement may be executed on the basis of detection signals before and after the alignment by the aligner.

Abstract translation: 带电粒子束装置具有开口形成构件，该开口形成构件形成有用于通过从带电粒子源发射的带电粒子束的开口，以及适于检测通过通道开口的带电粒子的检测器或适于检测带电粒子的检测器 通过对通过开口的带电粒子的另一个部件进行轰击而产生的粒子包括用于对准从样品排出的带电粒子的对准器和用于控制对准器的控制单元，其中控制单元控制对准器使其移动轨迹 从样品排出的带电粒子可以根据校准器对准前后的检测信号进行长度测量。