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    STORAGE DEVICE, OPERATION METHOD OF STORAGE DEVICE AND METHOD OF ACCESSING STORAGE DEVICE
    2.
    发明申请
    STORAGE DEVICE, OPERATION METHOD OF STORAGE DEVICE AND METHOD OF ACCESSING STORAGE DEVICE 有权
    存储装置，存储装置的操作方法和存取装置的访问方法

    公开(公告)号：US20160033976A1

    公开(公告)日：2016-02-04

    申请号：US14638012

    申请日：2015-03-04

    申请人： GOEUN JUNG ,  KYUNGRYUN KIM ,  SANGYONG YOON ,  SEUNG-CHEOL HAN

    发明人： GOEUN JUNG ,  KYUNGRYUN KIM ,  SANGYONG YOON ,  SEUNG-CHEOL HAN

    IPC分类号： G05D23/19 ,  G05B15/02 ,  G06F3/06

    CPC分类号： G05B15/02 ,  G11C7/04 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/32

    摘要： A method of operating a storage device includes a nonvolatile memory device, a controller configured to control the nonvolatile memory device and a temperature sensor configured to measure a temperature of the nonvolatile memory device. The method includes calculating an average sensing temperature of a sensing temperature measured by the temperature sensor for a period of time, and periodically calculating an elapsed time of data after the data is programmed in the nonvolatile memory device based upon the average sensing temperature.

    摘要翻译： 操作存储装置的方法包括非易失性存储装置，被配置为控制非易失性存储装置的控制器和配置成测量非易失性存储装置的温度的温度传感器。 该方法包括计算一段时间内由温度传感器测量的感测温度的平均感测温度，并且基于平均感测温度周期性地计算数据在非易失性存储器件中被编程之后的经过时间。

    NONVOLATILE MEMORY DEVICES AND METHODS OF PROGRAMMING NONVOLATILE MEMORY DEVICES
    3.
    发明申请
    NONVOLATILE MEMORY DEVICES AND METHODS OF PROGRAMMING NONVOLATILE MEMORY DEVICES 有权
    非易失性存储器件和编程非易失性存储器件的方法

    公开(公告)号：US20120314500A1

    公开(公告)日：2012-12-13

    申请号：US13477161

    申请日：2012-05-22

    申请人： YOUNGSUN SONG ,  BOGEUN KIM ,  OHSUK KWON ,  KITAE PARK ,  SEUNG-HWAN SHIN ,  SANGYONG YOON

    发明人： YOUNGSUN SONG ,  BOGEUN KIM ,  OHSUK KWON ,  KITAE PARK ,  SEUNG-HWAN SHIN ,  SANGYONG YOON

    IPC分类号： G11C16/04 ,  G11C16/06

    CPC分类号： G11C16/10 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/08 ,  G11C16/34 ,  G11C16/3459

    摘要： A nonvolatile memory device includes a memory cell array, a page buffer unit which output a verify-read result, a reference current generating unit which generates a reference current signal, a page buffer decoding unit which outputs currents according to the verify-read result. The nonvolatile memory device further includes an analog bit counting unit which counts the currents, a digital adding unit which calculates an accumulated sum of the counting result, a pass/fail checking unit which outputs a pass signal or fail signal according to the calculation result, and a control unit controlling a program operation.

    摘要翻译： 非易失性存储器件包括存储单元阵列，输出验证读取结果的页面缓冲器单元，产生参考电流信号的参考电流产生单元，根据验证读取结果输出电流的页面缓冲器解码单元。 非易失性存储装置还包括对电流进行计数的模拟比特计数单元，计算计数结果的累计和的数字加法单元，根据计算结果输出通过信号或失败信号的通过/失败检查单元， 以及控制程序操作的控制单元。

    STORAGE DEVICE AND READ METHODS THEREOF
    4.
    发明申请
    STORAGE DEVICE AND READ METHODS THEREOF 有权
    存储器件及其读取方法

    公开(公告)号：US20160004437A1

    公开(公告)日：2016-01-07

    申请号：US14736484

    申请日：2015-06-11

    申请人： YOON KIM ,  KYEHYUN KYUNG ,  KYUNGRYUN KIM ,  SANGYONG YOON

    发明人： YOON KIM ,  KYEHYUN KYUNG ,  KYUNGRYUN KIM ,  SANGYONG YOON

    IPC分类号： G06F3/06 ,  G11C16/04 ,  G11C16/26 ,  G11C16/32 ,  G06F11/10 ,  G11C29/52

    CPC分类号： G06F3/061 ,  G06F3/0619 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679 ,  G06F11/1048 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/32 ,  G11C29/021 ,  G11C29/023 ,  G11C29/028 ,  G11C29/52

    摘要： A read method of a storage device includes performing a first read operation on a nonvolatile memory device based on a time stamp table storing a program time and a time-read level look-up table indicating a read level shift due to a program lapsed time. A determination is made whether to adjust the time-read level look-up table based on a result of the first read operation. As a consequence of determining to adjust the time-read level look-up table, adjusting the time-read level look-up table through a valley search operation and performing a second read operation on the nonvolatile memory device based on the time stamp table and the adjusted time-read level look-up table.

    摘要翻译： 存储装置的读取方法包括：基于存储程序时间的时间戳表和指示由于程序经过时间引起的读取电平移位的时间读取级别查找表，对非易失性存储器件执行第一读取操作。 确定是否基于第一读取操作的结果来调整时间读取级别查找表。 作为确定调整时间读取级别查找表的结果，通过谷值搜索操作来调整时间读取级别查找表，并且基于时间戳表对非易失性存储器设备执行第二读取操作，以及 调整后的时间读取级别查找表。

    MEMORY SYSTEM AND MEMORY MANAGING METHOD THEREOF
    7.
    发明申请
    MEMORY SYSTEM AND MEMORY MANAGING METHOD THEREOF 有权
    存储器系统及其存储器管理方法

    公开(公告)号：US20130117500A1

    公开(公告)日：2013-05-09

    申请号：US13553845

    申请日：2012-07-20

    申请人： SANG-HYUN JOO ,  SANGYONG YOON

    发明人： SANG-HYUN JOO ,  SANGYONG YOON

    IPC分类号： G06F12/00

    CPC分类号： G06F12/0246 ,  G11C11/56 ,  G11C11/5607 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5635 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0035 ,  G11C13/0069 ,  G11C13/0097 ,  G11C16/349 ,  G11C2211/5641 ,  G11C2211/5644

    摘要： A memory managing method is provided for a memory system, including a nonvolatile memory device and a memory controller controlling the nonvolatile memory device. The memory managing method includes determining whether a program-erase number of a memory block in the nonvolatile memory device reaches a first reference value; managing a life of the memory block according to a first memory managing method when the program-erase number of the memory block is determined to be less than the first reference value; and managing the life of the memory block according to a second memory managing method different from the first memory managing method when the program-erase number of the memory block is determined to be greater than the first reference value.

    摘要翻译： 提供了一种用于存储器系统的存储器管理方法，包括非易失性存储器件和控制非易失性存储器件的存储器控​​制器。 存储器管理方法包括确定非易失性存储器件中的存储块的编程擦除次数是否达到第一参考值; 当存储块的编程擦除次数被确定为小于第一参考值时，根据第一存储器管理方法管理存储块的寿命; 以及当所述存储器块的所述编程擦除次数被确定为大于所述第一参考值时，根据与所述第一存储器管理方法不同的第二存储器管理方法来管理所述存储块的寿命。

    MULTI-LEVEL CELL MEMORY DEVICE AND METHOD OF OPERATING MULTI-LEVEL CELL MEMORY DEVICE
    8.
    发明申请
    MULTI-LEVEL CELL MEMORY DEVICE AND METHOD OF OPERATING MULTI-LEVEL CELL MEMORY DEVICE 有权
    多级单元存储器件和操作多级存储器件的方法

    公开(公告)号：US20140185377A1

    公开(公告)日：2014-07-03

    申请号：US14135734

    申请日：2013-12-20

    申请人： KYUNGRYUN KIM ,  SANGYONG YOON

    发明人： KYUNGRYUN KIM ,  SANGYONG YOON

    IPC分类号： G11C16/26

    CPC分类号： G11C16/26 ,  G11C11/5642 ,  G11C16/0483 ,  H01L27/11582 ,  H01L29/7926

    摘要： A read method of a multi-level cell memory device includes receiving a first read command, and reading first and second hard decision data by performing first and second hard decision read operations using a first hard decision read voltage and a second hard decision read voltage, respectively, the second hard decision read voltage being higher than the first hard decision read voltage. The method further includes selecting one of the first and second hard decision read voltages, reading first soft decision data by performing a first soft decision read operation using a plurality of soft decision read voltages having voltage levels which are different from that of the selected one of the first and second hard decision read voltages, and providing the first soft decision data to a memory controller for first error correction code (ECC) decoding.

    摘要翻译： 多级单元存储器件的读取方法包括接收第一读取命令，以及通过使用第一硬判决读取电压和第二硬判决读取电压执行第一和第二硬判决读取操作来读取第一和第二硬判决数据， 第二硬判决读取电压分别高于第一硬判决读电压。 该方法还包括选择第一和第二硬判决读取电压中的一个，通过使用多个软判决读取电压执行第一软判决读取操作来读取第一软判决数据，所述软判决读取电压具有不同于所选择的一个 第一和第二硬判定读取电压，并且向存储器控制器提供第一软判决数据用于第一纠错码（ECC）解码。