摘要:
Methods for designing a programmable interconnect matrix having reduced connectivity to achieve maximum routability for the reduced connectivity. An array of multiplexors, each having a multiplexor width wmux that is less than number of input conductors for the programmable matrix, are coupled to the input conductors of the programmable interconnect matrix such that the number of input signals shared between any two multiplexors is less than the multiplexor width wmux and such that each input signal has approximately the same number of chances to route. To better ensure the successful routing of input signals by a programmable interconnect matrix designed according to the present methods, improved routing methods are also described. According to a first embodiment, routing is accomplished by swapping successfully routed input signals with a blocked input signal and determining whether the input signal that has been swapped out may be routed through available multiplexors. According to a second embodiment, a predictive swapping technique is used whereby successfully routed signals qualified to provide a blocked signal with a route are first checked to determine whether a successful routing will be provided before swapping in the blocked output signal.
摘要:
Methods for designing a programmable interconnect matrix having reduced connectivity to achieve maximum routability for the reduced connectivity. An array of multiplexors, each having a multiplexor width w.sub.mux that is less than number of input conductors for the programmable matrix, are coupled to the input conductors of the programmable interconnect matrix such that the number of input signals shared between any two multiplexors is less than the multiplexor width w.sub.mux and such that each input signal has approximately the same number of chances to route. To better ensure the successful routing of input signals by a programmable interconnect matrix designed according to the present methods, improved routing methods are also described. According to a first embodiment, routing is accomplished by swapping successfully routed input signals with a blocked input signal and determining whether the input signal that has been swapped out may be routed through available multiplexors. According to a second embodiment, a predictive swapping technique is used whereby successfully routed signals qualified to provide a blocked signal with a route are first checked to determine whether a successful routing will be provided before swapping in the blocked output signal.
摘要:
Methods for designing a programmable interconnect matrix having reduced connectivity to achieve maximum routability for the reduced connectivity. An array of multiplexors, each having a multiplexor width w.sub.mux that is less than number of input conductors for the programmable matrix, are coupled to the input conductors of the programmable interconnect matrix such that the number of input signals shared between any two multiplexors is less than the multiplexor width w.sub.mux and such that each input signal has approximately the same number of chances to route. To better ensure the successful routing of input signals by a programmable interconnect matrix designed according to the present methods, improved routing methods are also described. According to a first embodiment, routing is accomplished by swapping successfully routed input signals with a blocked input signal and determining whether the input signal that has been swapped out may be routed through available multiplexors. According to a second embodiment, a predictive swapping technique is used whereby successfully routed signals qualified to provide a blocked signal with a route are first checked to determine whether a successful routing will be provided before swapping in the blocked output signal.
摘要:
Methods for designing a programmable interconnect matrix having reduced connectivity to achieve maximum routability for the reduced connectivity. An array of multiplexors, each having a multiplexor width w.sub.mux that is less than number of input conductors for the programmable matrix, are coupled to the input conductors of the programmable interconnect matrix such that the number of input signals shared between any two multiplexors is less than the multiplexor width w.sub.mux and such that each input signal has approximately the same number of chances to route. To better ensure the successful routing of input signals by a programmable interconnect matrix designed according to the present methods, improved routing methods are also described. According to a first embodiment, routing is accomplished by swapping successfully routed input signals with a blocked input signal and determining whether the input signal that has been swapped out may be routed through available multiplexors. According to a second embodiment, a predictive swapping technique is used whereby successfully routed signals qualified to provide a blocked signal with a route are first checked to determine whether a successful routing will be provided before swapping in the blocked output signal.
摘要:
A non-volatile memory device programs memory cells in each row in a manner that minimizes the coupling of spurious signals. A control logic unit programs the cells in a row using a set of bit state assignments chosen by evaluating data that are to be written to the cells in the row. The control logic unit performs this evaluation by determining the number of cells in the row that will be programmed to each of a plurality of bit states corresponding to the write data. The control logic unit then selects a set of bit state assignments that will cause the programming level assigned to each bit state to be inversely proportional to the number of memory cells in the row that are programmed with the bit state. The selected set of bit states is then used to program the memory cells in the row.
摘要:
A non-volatile memory device programs memory cells in each row in a manner that minimizes the coupling of spurious signals. A control logic unit programs the cells in a row using a set of bit state assignments chosen by evaluating data that are to be written to the cells in the row. The control logic unit performs this evaluation by determining the number of cells in the row that will be programmed to each of a plurality of bit states corresponding to the write data. The control logic unit then selects a set of bit state assignments that will cause the programming level assigned to each bit state to be inversely proportional to the number of memory cells in the row that are programmed with the bit state. The selected set of bit states is then used to program the memory cells in the row.
摘要:
A target memory cell of a memory device is programmed by applying a programming voltage to a word line that includes the target memory cell, determining whether the target memory cell is programmed, and increasing the programming voltage by a step voltage if it is determined that the target memory cell is not programmed. An initial programming voltage and the step voltage are each selectable after fabrication of the memory device.
摘要:
NAND architecture Flash memory strings, memory arrays, and memory devices are described that utilize continuous channel enhancement and depletion mode floating gate memory cells. Depletion mode floating gate memory cells allow for increased cell current through lower channel rds resistance and decreased “narrow width” effect, allowing for increased scaling of NAND memory cell strings. In addition, the required voltages for reading and programming operations are reduced, allowing the use of more efficient, lower voltage charge pumps and a reduction circuit element feature sizes and layouts. Cell inhibit of unselected cells is also increased, reducing the likelihood of cell disturb in the memory array. Operation speed is improved by increasing read current of the selected NAND string and by increasing the ability to overcome the RC time constants of circuit lines and capacitances through lowered voltage swings and increased current supplies.
摘要:
A memory device having memory cells in which a single access transistor controls the grounding of at least four storage elements, such as resistive storage elements, for purposes of reading the respective logical states of the storage elements. Unique sensing techniques are provided to sense the states of the storage elements. The logical states of the storage elements are decoupled from one another and are read independently.
摘要:
A memory array architecture suitable for variable resistance memory that mitigates sneak path and associated problems by limiting the number of memory cells associated with an addressed cell to a known number having a sneak path resistance that can be calculated and taken into consideration when sensing the addressed memory cell. Blocks of memory cells are associated with access transistors, which separate the memory cells connected thereto into one half (½) sections of cell blocks. The access transistors can be associated with n memory cells, where n is an even number of at least 2; there may or may not be an equal number of cells on either side of the transistor. The memory array has memory cells, which are grouped into 1T-2nCell blocks.