公开(公告)号：US06677249B2

公开(公告)日：2004-01-13

申请号：US09238959

申请日：1999-01-27

申请人： Franz Laermer ,  Wilhelm Frey ,  Hans Artmann

发明人： Franz Laermer ,  Wilhelm Frey ,  Hans Artmann

IPC分类号： H01L21302

CPC分类号： H01L21/7806 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  Y10S117/915

摘要： A method for removing layers or layer systems from a substrate and subsequent application onto an alternative substrate. A porous breakaway layer is formed by anodization in hydrofluoric acid. Optionally, a stabilizing layer with lower porosity is previously produced on top of the breakaway layer. The oxide of the porous breakaway layer or the stabilizing layer is removed by brief contact with HF, and an epitaxial layer is applied on the porous breakaway layer or the stabilizing layer. The epitaxial layer or the layer system is then removed from the substrate, and the epitaxial layer or the layer system is applied onto an alternative substrate. Optionally, the stabilizing layer and/or residues of the breakaway layer are removed from the epitaxial layer.

摘要翻译： 一种用于从衬底去除层或层系统并随后应用到替代衬底上的方法。 通过在氢氟酸中阳极氧化形成多孔分离层。 任选地，预先在分离层的顶部产生具有较低孔隙率的稳定层。 通过与HF短接除去多孔分离层或稳定层的氧化物，并且在多孔分离层或稳定层上施加外延层。 然后从衬底去除外延层或层系统，并且将外延层或层系统施加到替代衬底上。 任选地，从外延层去除稳定层和/或分离层的残余物。

公开(公告)号：US06726815B1

公开(公告)日：2004-04-27

申请号：US09937926

申请日：2001-12-26

申请人： Hans Artmann ,  Wilhelm Frey ,  Franz Laermer

发明人： Hans Artmann ,  Wilhelm Frey ,  Franz Laermer

IPC分类号： C25B900

CPC分类号： C25F7/00 ,  Y10S204/12

摘要： An electrochemical etching cell (1) is proposed for etching an etching body (15) made at least superficially of an etching material. The etching cell (1) has at least one chamber filled with an electrolyte, and is provided with a first electrode (13), which at least superficially has a first electrode material, and with a second electrode (13′) which at least superficially has a second electrode material. Furthermore, the etching body (15) is in contact, at least region-wise, with the electrolyte. In this context, the first electrode material and the second electrode material are selected such that, after the etching, the etching body (15) is not contaminated and/or is not impaired in its properties by the electrode materials. In particular, the electrode materials are the same materials as the etching material. Also proposed is a method for etching an etching body (15) using this etching cell (1), the first and/or the second electrode (13, 13′) being used as a sacrificial electrode. The proposed etching cell is particularly suitable for etching silicon wafers in a CMOS-compatible production line.

摘要翻译： 提出一种用于蚀刻蚀刻材料至少表面蚀刻的蚀刻体（15）的电化学蚀刻单元（1）。 蚀刻单元（1）具有填充有电解质的至少一个室，并且设置有至少表面具有第一电极材料的第一电极（13）和至少表面上的第二电极（13'） 具有第二电极材料。 此外，蚀刻体（15）至少在区域上与电解质接触。 在这种情况下，选择第一电极材料和第二电极材料，使得在蚀刻之后，蚀刻体（15）不被电极材料污染和/或不损害其性能。 特别地，电极材料与蚀刻材料相同。 还提出了使用该蚀刻单元（1）蚀刻蚀刻体（15）的方法，第一和/或第二电极（13,13'）用作牺牲电极。 所提出的蚀刻单元特别适用于在CMOS兼容的生产线中蚀刻硅晶片。

公开(公告)号：US07709933B2

公开(公告)日：2010-05-04

申请号：US10742055

申请日：2003-12-18

申请人： Hans Artmann ,  Thorsten Pannek ,  Hans-Peter Trah ,  Franz Laermer

发明人： Hans Artmann ,  Thorsten Pannek ,  Hans-Peter Trah ,  Franz Laermer

IPC分类号： H01L31/036

CPC分类号： C04B38/007 ,  B81C1/00492 ,  B81C2201/0115 ,  C04B2111/28 ,  C04B35/14

摘要： A structural element having a region of porous silicon or porous silicon oxide, which was obtained from a porization, starting from an edge area of the region, in at least largely crystalline silicon. Relative to the edge area, the crystalline silicon has a crystal orientation that has an orientation that differs from a orientation or from an orientation that is equivalent for reasons of symmetry. This structural element is suited for use in a mass-flow sensor, in a component for the thermal decoupling of sensor and/or actuator structures, or a gas sensor. Furthermore, methods for setting the thermal conductivity of a region of porous silicon or porous silicon oxide of a structural element are described. In particular, in a porization of crystalline silicon, starting from an edge area of the region, the crystalline orientation of the silicon relative to the edge area is selected such that a thermal conductivity comes about along a direction perpendicular to the edge area that differs from, in particular is lower than, the thermal conductivity, that comes about in this direction in an otherwise analogous porization of crystalline silicon having a orientation or an equivalent orientation relative to this edge area.

摘要翻译： 具有多孔硅或多孔氧化硅区域的结构元件，其从至少大部分为晶体硅的区域的边缘区域开始从孔化获得。 相对于边缘区域，晶体硅具有取向不同于<100>取向的晶体取向或者由于对称原因等同的取向。 该结构元件适用于质量流量传感器，用于传感器和/或致动器结构或气体传感器的热解耦的部件。 此外，描述了用于设定结构元件的多孔硅或多孔氧化硅区域的热导率的方法。 特别地，在从区域的边缘区域开始的晶体硅的孔化中，选择硅相对于边缘区域的晶体取向，使得热导率沿垂直于与边缘区域不同的边缘区域的方向 ，特别是低于导热率，其在相对于该边缘区域具有<100>取向或等同取向的晶体硅的另外类似的孔化中在该方向上。

公开(公告)号：US06372656B1

公开(公告)日：2002-04-16

申请号：US09406272

申请日：1999-09-24

申请人： Franz Laermer ,  Wilhelm Frey

发明人： Franz Laermer ,  Wilhelm Frey

IPC分类号： H01L21302

CPC分类号： G01J5/12 ,  H01L31/09

摘要： A method of producing an infrared sensor on a semiconductor substrate involves defining at least one area on the surface of the semiconductor substrate where a recess is to be created in the semiconductor substrate, depositing a membrane on the surface, applying a radiation absorber to the membrane in the defined area, applying thermoelements with a hot contact in thermal contact with the radiation absorber and a cold contact in thermal contact with the semiconductor substrate. In this method, an opening is provided in the membrane in the defined area, and the semiconductor substrate is etched through the opening.

摘要翻译： 在半导体衬底上制造红外传感器的方法包括：在半导体衬底的表面上形成至少一个区域，在半导体衬底的表面上形成凹槽，在半导体衬底中形成凹槽，在表面上沉积膜，向膜上施加辐射吸收体 在限定的区域中，将具有与辐射吸收体热接触的热接触件的热电偶和与半导体衬底热接触的冷接触件加热。 在该方法中，在限定区域中的膜中设置开口，并且通过开口蚀刻半导体衬底。

公开(公告)号：US06360604B1

公开(公告)日：2002-03-26

申请号：US09423532

申请日：1999-10-09

申请人： Franz Laermer ,  Bernhard Elsner ,  Wilhelm Frey

发明人： Franz Laermer ,  Bernhard Elsner ,  Wilhelm Frey

IPC分类号： G01P1500

CPC分类号： G01P15/125 ,  G01P2015/0814

摘要： An acceleration sensor has an oscillating structure which is movably suspended on a substrate and can be deflected by an acting acceleration. The acceleration sensor also has an analyzing arrangement detecting a deflection of the oscillating structure due to the acceleration. The oscillating structure and/or the analyzing arrangement are connected to the substrate by mechanical decoupling devices.

摘要翻译： 加速度传感器具有可移动地悬挂在基板上并且可以通过作用加速度而偏转的振荡结构。 加速度传感器还具有检测由于加速度引起的振动结构的偏转的分析装置。 振荡结构和/或分析装置通过机械解耦装置连接到基板。

公开(公告)号：US06960536B2

公开(公告)日：2005-11-01

申请号：US10613459

申请日：2003-07-03

申请人： Wilhelm Frey ,  Franz Laermer ,  Christoph Duenn

发明人： Wilhelm Frey ,  Franz Laermer ,  Christoph Duenn

IPC分类号： B81C1/00 ,  C23F1/14 ,  H01L21/306 ,  H01L21/461

CPC分类号： B81C1/00571 ,  B81C1/00595 ,  B81C2201/0133 ,  B81C2201/016 ,  B81C2203/0735 ,  C23F1/14 ,  H01L21/30604

摘要： A method for producing a microsystem that has, situated on a substrate, a first functional layer that includes a conductive area and a sublayer. Situated on the first functional layer is a second mechanical functional layer, which is first initially applied onto a sacrificial layer situated and structured on the first functional layer. In addition, a layer is situated on the side of the sublayer facing away from the conductive area. The layer constitutes a protective layer on the first functional layer that acts in areas during a sacrificial layer etching process so that during removal of the sacrificial layer no etching of the areas of the first functional layer covered by the protective layer occurs, and that in the region of the areas of the first functional layer implemented without the protective layer the sublayer is removed essentially selectively to the conductive area at the same time as the sacrificial layer. Further, a method is described for producing integrated microsystems having silicon-germanium functional layers, sacrificial layers containing germanium, and open metal surfaces. The sacrificial layers containing germanium are at least partially removed in an etching solution, a pH value of the etching solution being kept at least approximately neutral during the etching procedure using a buffer.

摘要翻译： 一种微系统的制造方法，其具有位于基板上的包括导电区域和子层的第一功能层。 位于第一功能层上的是第二机械功能层，其首先被初始施加到位于第一功能层上并构成的牺牲层上。 此外，层位于子层背离导电区域的一侧。 该层在第一功能层上构成保护层，其在牺牲层蚀刻工艺期间在区域中起作用，使得在去除牺牲层期间不会发生由保护层覆盖的第一功能层的区域的蚀刻， 在没有保护层的情况下实现的第一功能层的区域的区域在与牺牲层同时基本上选择性地去除导电区域。 此外，描述了一种用于制造具有硅 - 锗功能层，包含锗的牺牲层和开放金属表面的集成微系统的方法。 在蚀刻溶液中至少部分地除去含有锗的牺牲层，在使用缓冲液的蚀刻过程中，蚀刻溶液的pH值保持至少大致为中性。

公开(公告)号：US06592664B1

公开(公告)日：2003-07-15

申请号：US09656546

申请日：2000-09-06

申请人： Wilhelm Frey ,  Franz Laermer ,  Klaus Heyers

发明人： Wilhelm Frey ,  Franz Laermer ,  Klaus Heyers

IPC分类号： C30B2508

CPC分类号： C30B25/105 ,  Y10T117/10

摘要： A method for epitaxial deposition of atoms or molecules from a reactive gas on a deposition surface of a substrate is described. The method includes the following steps: a first amount of energy is supplied by heating at least the deposition surface; and an ionized inert gas is conducted, at least from time to time, onto the deposition surface in order to supply, at least from time to time, a second amount of energy through the effect of ions of the ionized inert gas on the deposition surface. The first amount of energy is less than the energy amount necessary for the epitaxial deposition of atoms or molecules of the reactive gas on the deposition surface. A sum of the first energy amount and the second energy equaling, at least from time to time, a total amount of energy that is sufficient for the epitaxial deposition of atoms or molecules of the reactive gas onto the deposition surface.

摘要翻译： 描述了从衬底的沉积表面上的反应性气体外延沉积原子或分子的方法。 该方法包括以下步骤：通过至少加热沉积表面来提供第一量的能量; 并且电离惰性气体至少不时地进行到沉积表面上，以便至少通过电离惰性气体的离子在沉积表面上的时间来供应第二量的能量。 第一量的能量小于沉积表面上的反应气体的原子或分子的外延沉积所需的能量。 至少不时地使第一能量和第二能量的总和等于足以将反应气体的原子或分子外延沉积到沉积表面上的能量的总量。

公开(公告)号：US05996409A

公开(公告)日：1999-12-07

申请号：US64495

申请日：1998-04-22

申请人： Karsten Funk ,  Franz Laermer ,  Bernhard Elsner ,  Wilhelm Frey

发明人： Karsten Funk ,  Franz Laermer ,  Bernhard Elsner ,  Wilhelm Frey

IPC分类号： B60R21/00 ,  B60R21/01 ,  B60R21/013 ,  B60R21/0132 ,  G01C19/56 ,  G01C19/5712 ,  G01P15/125 ,  G01P15/18 ,  G01C19/00 ,  G01P15/08

CPC分类号： B60R21/0132 ,  B60R21/013 ,  G01C19/5712 ,  G01P15/097 ,  G01P15/125 ,  G01P15/18 ,  B60G2800/9124 ,  B60R2021/0018 ,  B60R2021/01006 ,  B60R2021/01306 ,  G01P2015/0814

摘要： An acceleration sensing device includes a rotational speed sensor which is mounted on a substrate and detects rotational speed, at least one oscillating structure with a deflectable seismic mass, and an acceleration sensor that detects linear acceleration and has at least one additional seismic mass which is suspended on flexible elements so that it can be deflected. The seismic masses of the two sensors are deflected independently of one another.

摘要翻译： 加速度感测装置包括安装在基板上并检测转速的转速传感器，具有可偏转地震质量的至少一个振荡结构和检测线性加速度的至少一个额外的地震块悬挂的加速度传感器 在柔性元件上，使其可以偏转。 两个传感器的地震质量彼此独立地偏转。

公开(公告)号：US06645800B2

公开(公告)日：2003-11-11

申请号：US10016259

申请日：2001-10-26

申请人： Wilhelm Frey ,  Franz Laermer ,  Klaus Heyers

发明人： Wilhelm Frey ,  Franz Laermer ,  Klaus Heyers

IPC分类号： H01L218238

CPC分类号： G01P15/0802 ,  G01P15/124 ,  H01L21/3065

摘要： In a method for the production of a field-effect structure and a field-effect structure, a movable gate structure is arranged above a gate region in a substrate between a drain and a source. The gate region is covered with a gate oxide. The movable gate structure is created from silicon-germanium and in an intermediate step of the production method is arranged on a germanium sacrificial layer on the gate oxide.

摘要翻译： 在制造场效应结构和场效应结构的方法中，可动栅极结构布置在漏极和源极之间的衬底中的栅极区域的上方。 栅极区域被栅极氧化物覆盖。 可移动栅极结构由硅锗制成，并且在制造方法的中间步骤中，栅极氧化物上的锗牺牲层上布置有可动栅结构。

公开(公告)号：US06217647B1

公开(公告)日：2001-04-17

申请号：US09235018

申请日：1999-01-21

申请人： Franz Laermer ,  Wilhelm Frey

发明人： Franz Laermer ,  Wilhelm Frey

IPC分类号： C30B102

CPC分类号： C23C16/24 ,  C30B1/023 ,  C30B29/06

摘要： To produce monocrystalline layers of conducting or semiconducting materials on porous monocrystalline layers of the same material in a reproducible and time-saving manner, a method is provided which involves applying an amorphous layer of the same material to the porous material and converting the amorphous layer to a monocrystalline layer by tempering.

摘要翻译： 为了以可重复且节省时间的方式在相同材料的多孔单晶层上制造导电或半导体材料的单晶层，提供了一种方法，其包括将相同材料的非晶层施加到多孔材料并将非晶层转化为 单晶层通过回火处理。