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13 条记录 (耗时 0.021 秒)

    Acceleration sensor
    1.
    发明授权
    Acceleration sensor 有权
    加速度传感器

    公开(公告)号：US06360604B1

    公开(公告)日：2002-03-26

    申请号：US09423532

    申请日：1999-10-09

    申请人： Franz Laermer ,  Bernhard Elsner ,  Wilhelm Frey

    发明人： Franz Laermer ,  Bernhard Elsner ,  Wilhelm Frey

    IPC分类号： G01P1500

    CPC分类号： G01P15/125 ,  G01P2015/0814

    摘要： An acceleration sensor has an oscillating structure which is movably suspended on a substrate and can be deflected by an acting acceleration. The acceleration sensor also has an analyzing arrangement detecting a deflection of the oscillating structure due to the acceleration. The oscillating structure and/or the analyzing arrangement are connected to the substrate by mechanical decoupling devices.

    摘要翻译： 加速度传感器具有可移动地悬挂在基板上并且可以通过作用加速度而偏转的振荡结构。 加速度传感器还具有检测由于加速度引起的振动结构的偏转的分析装置。 振荡结构和/或分析装置通过机械解耦装置连接到基板。

    Methods for plasma etching of silicon
    3.
    发明授权
    Methods for plasma etching of silicon 有权
    硅等离子体蚀刻方法

    公开(公告)号：US07166536B1

    公开(公告)日：2007-01-23

    申请号：US09720761

    申请日：2000-03-16

    申请人： Franz Laermer ,  Andrea Schilp ,  Bernhard Elsner

    发明人： Franz Laermer ,  Andrea Schilp ,  Bernhard Elsner

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3065 ,  Y02C20/30 ,  Y02P70/605

    摘要： A method of plasma etching, in particular of anisotropic plasma etching, of laterally defined structures in a silicon substrate, using a process gas, includes having at least one passivating material precipitated on the side walls of the laterally defined structures at least from time to time prior to and/or during etching. In an exemplary method, at least one of the compounds selected from the group ClF3, BrF3, or IF5 is added to the process gas as a fluorine-delivering etching gas. In another exemplary method, NF3 is added to the process gas, at least from time to time, as an additive consuming the passivating material. Finally, in another exemplary method, a light and easily ionizable gas, in particular H2, He, or Ne, is added, at least from time to time, to the process gas. The three exemplary methods may be combined.

    摘要翻译： 使用工艺气体的硅衬底中的横向限定结构的等离子体蚀刻（特别是各向异性等离子体蚀刻）的方法至少包括至少一次在横向限定的结构的侧壁上析出的钝化材料 在蚀刻之前和/或期间。 在示例性方法中，将至少一种选自ClF 3 3，BrF 3或IF 5的化合物加入到该方法 气体作为输送氧气的蚀刻气体。 在另一示例性方法中，至少不时地将NF 3 N作为消耗钝化材料的添加剂加入到工艺气体中。 最后，在另一示例性方法中，至少不时地向工艺气体添加轻质且易于电离的气体，特别是H 2，He或Ne。 可以组合三种示例性方法。

    Field effect transistor, especially for use as a sensor element or acceleration sensor
    4.
    发明授权
    Field effect transistor, especially for use as a sensor element or acceleration sensor 失效
    场效应晶体管，特别用作传感器元件或加速度传感器

    公开(公告)号：US06724023B2

    公开(公告)日：2004-04-20

    申请号：US09838062

    申请日：2001-04-19

    申请人： Klaus Heyers ,  Bernhard Elsner

    发明人： Klaus Heyers ,  Bernhard Elsner

    IPC分类号： H01L2984

    CPC分类号： H01L29/84 ,  G01P15/0802 ,  G01P15/124 ,  G01P2015/0814

    摘要： A field effect transistor suited for use as a sensor element or in an acceleration sensor is described. For this purpose, the field effect transistor within a planar substrate has a drain area and a source area, which are separated from each other by a channel region. In addition, a gate electrode is provided which is arranged so as to be substantially self-supporting above the substrate over the channel region. The gate electrode is flexibly supported such that an external force acting upon it which has a component acting parallel to the surface of the substrate causes a deflection of the gate electrode parallel to the surface of the substrate. A method is also described in which, in a first method step, an integrated circuit having a drain area, a source area, and a channel region is manufactured or made available in a CMOS process, and thereafter, in a second method step, the substantially self-supporting gate electrode is produced on the integrated circuit using electroplating additive technology.

    摘要翻译： 描述适合用作传感器元件或加速度传感器的场效应晶体管。 为此，平面衬底内的场效应晶体管具有通过沟道区彼此分离的漏极区和源极区。 此外，提供栅极电极，其布置成在沟道区域上基板上基本上自支撑。 栅电极被柔性地支撑，使得作用在其上的具有与衬底的表面平行的部件的外力导致栅极平行于衬底的表面的偏转。 还描述了一种方法，其中在第一方法步骤中，在CMOS工艺中制造或制造具有漏极区域，源极区域和沟道区域的集成电路，此后，在第二方法步骤中， 使用电镀添加剂技术在集成电路上产生基本上自支撑的栅电极。

    Suspension for micromechanical structure and micromechanical acceleration sensor
    5.
    发明授权
    Suspension for micromechanical structure and micromechanical acceleration sensor 失效
    用于微机械结构和微机械加速度传感器的悬架

    公开(公告)号：US5646347A

    公开(公告)日：1997-07-08

    申请号：US521942

    申请日：1995-08-31

    申请人： Kurt Weiblen ,  Michael Offenberg ,  Bernhard Elsner

    发明人： Kurt Weiblen ,  Michael Offenberg ,  Bernhard Elsner

    IPC分类号： B81B3/00 ,  B81C1/00 ,  G01P1/00 ,  G01P15/125 ,  H01L49/00

    CPC分类号： G01P1/006 ,  G01P15/125 ,  G01P2015/0814

    摘要： A suspension or an acceleration sensor having a suspension is proposed, by means of which a micromechanical structure or the acceleration sensor is anchored on a substrate. The suspension takes place by means of lever elements on which an equalizing beam acts. The lever elements are deformed by the stresses in the equalizing beam with respect to the substrate in such a way that the stresses in the microstructure with respect to the substrate are either compensated for or, alternatively, are converted from compressive stresses to tensile stresses or from tensile stresses to compressive stresses.

    摘要翻译： 提出了具有悬架的悬架或加速度传感器，通过该悬架或加速度传感器将微机械结构或加速度传感器锚定在基板上。 悬挂通过杠杆元件进行，平衡梁作用在杠杆元件上。 杠杆元件通过相等于基板的均衡梁中的应力变形，使得相对于基板的微结构中的应力被补偿或者替代地从压缩应力转变为拉伸应力或从 对应力的拉伸应力。

    Manufacturing method for a micromechanical device
    6.
    发明授权
    Manufacturing method for a micromechanical device 有权
    微机械装置的制造方法

    公开(公告)号：US06290858B1

    公开(公告)日：2001-09-18

    申请号：US09416721

    申请日：1999-10-13

    申请人： Josef Hirtreiter ,  Bernhard Elsner

    发明人： Josef Hirtreiter ,  Bernhard Elsner

    IPC分类号： B44C122

    CPC分类号： B81C1/00126 ,  B81B2201/047 ,  B81B2203/0307

    摘要： A manufacturing method for a micromechanical device. In this method, a substrate is prepared with a plating base area to accommodate an anchoring region, and an adhesive layer is formed and structured on the substrate, so that the anchoring region is formed in the plating base area in the form of a quasi-insular region in a recess of the adhesive layer. The quasi-insular region is connected to the adhesive layer outside of the plated based area by at least one thin web. A mask is formed on the adhesive layer and structured so that the anchoring region and an overgrowth region adjacent to the anchoring region remain unmasked. An electroplated layer is deposited on the unmasked anchoring region so that the overgrowth region is overgrown, and the mask and the part of the adhesive layer that has not been overgrown are removed.

    摘要翻译： 一种微机械装置的制造方法。 在该方法中，制备具有电镀基底面积以容纳锚定区域的基板，并且在基板上形成并构造粘合剂层，使得锚定区域以准准地形成在电镀基区域中， 在粘合剂层的凹部中的岛状区域。 准岛状区域通过至少一个薄网连接到电镀基区域外的粘合剂层。 在粘合剂层上形成掩模，并且构造成使锚定区域和与锚固区域相邻的过度生长区域保持未被遮蔽。 在未掩蔽的锚定区域上沉积电镀层，使得过度生长区域过度生长，并且除去掩模和尚未长满的粘合剂层的部分。

    Sensor comprising multilayer substrate
    10.
    发明授权
    Sensor comprising multilayer substrate 失效
    传感器包括多层基板

    公开(公告)号：US5631422A

    公开(公告)日：1997-05-20

    申请号：US550484

    申请日：1995-10-30

    申请人： Peter Sulzberger ,  Michael Offenberg ,  Bernhard Elsner ,  Markus Lutz

    发明人： Peter Sulzberger ,  Michael Offenberg ,  Bernhard Elsner ,  Markus Lutz

    IPC分类号： G01P15/08 ,  G01P15/125 ,  H01L29/84 ,  H01G7/00

    CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P2015/0814

    摘要： A sensor includes a first silicon layer, and a sensor element including at least one electrode structured from the first silicon layer. The sensor also includes at least one connecting element also structured from the first silicon layer. The connecting element has a doping less than the doping of the electrode. The sensor comprises at least one conductor track on the first silicon layer routed over the connecting element and coupled to the sensor element for supplying an external signal.

    摘要翻译： 传感器包括第一硅层和包括由第一硅层构成的至少一个电极的传感器元件。 该传感器还包括至少一个也由第一硅层构成的连接元件。 连接元件的掺杂小于电极的掺杂。 传感器包括在连接元件上布线的第一硅层上的至少一个导体轨道，并且耦合到传感器元件以提供外部信号。