摘要:
A measurement system configured to measure wave front aberrations of a projection system, as well as a lithographic apparatus including such a measurement system, is provided wherein the measurement system includes a diffractive element and structure configured to increase the pupil filling of the radiation in the pupil of the projection system, both movable into the projection beam between a radiation system and the projection system, and a sensor module configured to sense radiation that has traversed the projection system to measure wave front aberrations of the projection system.
摘要:
A lithographic projection apparatus contains a projection system configured to project a patterned beam of radiation onto a target portion of a substrate. The projection system contains one or more optically active mirrors and heat shields located to intercept heat radiation to or from the mirrors and/or their support. The heat shields are actively cooled and the mirrors and the heat shields and the mirrors are supported separately on a support frame to reduce vibration of the mirrors due to active cooling. The heat shields may include heat shields that intercept heat radiation to or from the support and/or respective heat shields for individual mirrors that intercept heat radiation to or from the mirrors.
摘要:
An illumination intensity adjustment device includes a plurality of blades disposed in the projection beam so as to cast half-shadows extending across the illumination field. The blades can be selectively rotated to increase their width perpendicular to the projection beam to control uniformity.
摘要:
A device manufacturing method according to one embodiment of the invention includes positioning a reflective patterning structure to reflect at least a portion of a beam of radiation as a patterned beam of radiation having a pattern in its cross-section. The method also includes using a projection system to project the patterned beam of radiation to form an image on a target portion of a layer of radiation-sensitive material. Positioning includes at least one among shifting and tilting a nominal reflective surface of the reflective patterning structure with respect to a nominal object plane of the projection system according to a distortion value.
摘要:
In a lithographic projection apparatus, an object such as a mask is shielded from stray particles by a particle shield using electromagnetic fields. The fields may be a uniform electric field, a non-uniform electric field or an optical breeze. The particle shield is fixed to the mask holder rather than the mask.
摘要:
A device manufacturing method according to one embodiment of the invention includes positioning a reflective patterning structure to reflect at least a portion of a beam of raditaion as a patterned beam of radiation having a pattern in its cross-section. The method also includes using a projection system to project the patterned beam of radiation to form an image on a target portion of a layer of radiation-sensitive material. Positioning includes at least one among shifting and tilting a nominal reflective surface of the reflective patterning structure with respect to a nominal object plane of the projection system according to a distortion value.
摘要:
A device manufacturing method according to one embodiment of the invention includes positioning a reflective patterning structure to reflect at least a portion of a beam of radiation as a patterned beam of radiation having a pattern in its cross-section. The method also includes using a projection system to project the patterned beam of radiation to form an image on a target portion of a layer of radiation-sensitive material. Positioning includes at least one among shifting and tilting a nominal reflective surface of the reflective patterning structure with respect to a nominal object plane of the projection system according to a distortion value.
摘要:
A lithographic projection apparatus is disclosed. The apparatus includes a radiation system that provides a beam of radiation, and a support structure that supports a patterning structure. The patterning structure is configured to pattern the beam of radiation according to a desired pattern. The apparatus also includes a substrate support that supports a substrate, a projection system that projects the patterned beam onto a target portion of the substrate, a plurality of optical elements that form part of at least one of the radiation system, the patterning structure, and the projection system; and a cleaning device. The cleaning device includes at least one cleaning beam of radiation, and a gas. The cleaning device is configured to clean an individual optical element or a subset of the plurality of optical elements.
摘要:
System aberrations are effected in a projection system of a lithographic apparatus to optimize imaging of a thick reflective mask with a thick absorber that is obliquely illuminated. The aberrations may include Z5 astigmatism, Z9 spherical, and Z12 astigmatism.
摘要:
An immersion lithographic apparatus is cleaned by use of a cleaning liquid consisting essentially of ultra-pure water and (a) a mixture of hydrogen peroxide and ozone, or (b) hydrogen peroxide at a concentration of up to 5%, or (c) ozone at a concentration of up to 50 ppm, or (d) oxygen at concentration of up to 10 ppm, or (e) any combination selected from (a)-(d).