Wiring structure and method of forming the structure
    4.
    发明授权
    Wiring structure and method of forming the structure 有权
    布线结构及形成方法

    公开(公告)号:US08569888B2

    公开(公告)日:2013-10-29

    申请号:US13114079

    申请日:2011-05-24

    IPC分类号: H01L23/48 H01L21/4763

    摘要: Disclosed is a wiring structure and method of forming the structure with a conductive diffusion barrier layer having a thick upper portion and thin lower portion. The thicker upper portion is located at the junction between the wiring structure and the adjacent dielectric materials. The thicker upper portion: (1) minimizes metal ion diffusion and, thereby TDDB; (2) allows a wire width to dielectric space width ratio that is optimal for low TDDB to be achieved at the top of the wiring structure; and (3) provides a greater surface area for via landing. The thinner lower portion: (1) allows a different wire width to dielectric space width ratio to be maintained in the rest of the wiring structure in order to balance other competing factors; (2) allows a larger cross-section of wire to reduce current density and, thereby reduce EM; and (3) avoids an increase in wiring structure resistivity.

    摘要翻译: 公开了一种具有导电扩散阻挡层的结构的布线结构和方法,所述导电扩散阻挡层具有较厚的上部和较薄的下部。 较厚的上部位于布线结构和相邻电介质材料之间的接合处。 较厚的上部:(1)最小化金属离子扩散,从而使TDDB; (2)允许在布线结构的顶部实现对于低TDDB最佳的电线宽度与电介质空间宽度比; 和(3)为通孔着陆提供更大的表面积。 较薄的下部:(1)允许在布线结构的其余部分中保持不同的导线宽度与电介质空间宽度比,以平衡其他竞争因素; (2)允许更大的导线截面减小电流密度,从而减少EM; 和(3)避免了布线结构电阻率的增加。

    WIRING STRUCTURE AND METHOD OF FORMING THE STRUCTURE
    5.
    发明申请
    WIRING STRUCTURE AND METHOD OF FORMING THE STRUCTURE 有权
    导线结构及形成结构的方法

    公开(公告)号:US20120299188A1

    公开(公告)日:2012-11-29

    申请号:US13114079

    申请日:2011-05-24

    IPC分类号: H01L23/485 H01L21/768

    摘要: Disclosed is a wiring structure and method of forming the structure with a conductive diffusion barrier layer having a thick upper portion and thin lower portion. The thicker upper portion is located at the junction between the wiring structure and the adjacent dielectric materials. The thicker upper portion: (1) minimizes metal ion diffusion and, thereby TDDB; (2) allows a wire width to dielectric space width ratio that is optimal for low TDDB to be achieved at the top of the wiring structure; and (3) provides a greater surface area for via landing. The thinner lower portion: (1) allows a different wire width to dielectric space width ratio to be maintained in the rest of the wiring structure in order to balance other competing factors; (2) allows a larger cross-section of wire to reduce current density and, thereby reduce EM; and (3) avoids an increase in wiring structure resistivity.

    摘要翻译: 公开了一种具有导电扩散阻挡层的结构的布线结构和方法,所述导电扩散阻挡层具有较厚的上部和较薄的下部。 较厚的上部位于布线结构和相邻电介质材料之间的接合处。 较厚的上部:(1)最小化金属离子扩散,从而使TDDB; (2)允许在布线结构的顶部实现对于低TDDB最佳的电线宽度与电介质空间宽度比; 和(3)为通孔着陆提供更大的表面积。 较薄的下部:(1)允许在布线结构的其余部分中保持不同的导线宽度与电介质空间宽度比,以平衡其他竞争因素; (2)允许更大的导线截面减小电流密度,从而减少EM; 和(3)避免了布线结构电阻率的增加。