公开(公告)号：US4924334A

公开(公告)日：1990-05-08

申请号：US233235

申请日：1988-08-17

申请人： Heinrich Diepers ,  Dietrich Stephani

发明人： Heinrich Diepers ,  Dietrich Stephani

IPC分类号： G11B5/48 ,  G11B5/596

CPC分类号： G11B5/4886 ,  G11B5/59633

摘要： A magnetic storage device which includes a magnetizable storage disk, a read/write magnetic head arranged on a flying body and a track guidance system has a servo head formed on a long side face of the flying body in the form of a magneto restrictive sensor. Subsequent electronics keep the head on at least one separate guidance track.

摘要翻译： 包括可磁化存储盘，布置在飞行体上的读/写磁头和轨道引导系统的磁存储装置具有形成在磁限制传感器形式的飞行体的长侧面上的伺服头。 随后的电子设备将头部保持在至少一个单独的引导轨道上。

公开(公告)号：US07646026B2

公开(公告)日：2010-01-12

申请号：US12088298

申请日：2006-09-19

申请人： Peter Friedrichs ,  Dethard Peters ,  Reinhold Schörner ,  Dietrich Stephani

发明人： Peter Friedrichs ,  Dethard Peters ,  Reinhold Schörner ,  Dietrich Stephani

IPC分类号： H01L31/00 ,  H01L31/117

CPC分类号： H01L29/861 ,  H01L29/1608 ,  H01L29/36

摘要： An integrated vertical SiC—PN power diode has a highly doped SiC semiconductor body of a first conductivity type, a low-doped drift zone of the first conductivity type, arranged above the semiconductor body on the emitter side, an emitter zone of a second conductivity type, applied to the drift zone, and at least one thin intermediate layer of the first conductivity type. The intermediate layer is arranged inside the drift zone, has a higher doping concentration than the drift zone, and divides the drift zone into at least one first anode-side drift zone layer and at least one second cathode-side drift zone layer. There is also disclosed a circuit configuration with such SiC—PN power diodes.

摘要翻译： 集成的纵向SiC-PN功率二极管具有第一导电类型的高掺杂SiC半导体本体，第一导电类型的低掺杂漂移区，布置在发射极侧的半导体主体上方，具有第二导电性的发射极区 类型，施加到漂移区，以及至少一个第一导电类型的薄中间层。 中间层布置在漂移区内，具有比漂移区更高的掺杂浓度，并将漂移区分成至少一个第一阳极侧漂移区层和至少一个第二阴极侧漂移区层。 还公开了具有这种SiC-PN功率二极管的电路结构。

公开(公告)号：US06232625B1

公开(公告)日：2001-05-15

申请号：US09472060

申请日：1999-12-23

申请人： Wolfgang Bartsch ,  Heinz Mitlehner ,  Dietrich Stephani

发明人： Wolfgang Bartsch ,  Heinz Mitlehner ,  Dietrich Stephani

IPC分类号： H01L2980

CPC分类号： H01L29/1608 ,  H01L29/8083 ,  H02H9/02

摘要： A semiconductor configuration, in particular based on silicon carbide, is specified which rapidly limits a short-circuit current to an acceptable current value. For this purpose, when a predetermined saturation current is exceeded, a lateral channel region is pinched off, and the current is limited to a value below the saturation current.

摘要翻译： 特别是基于碳化硅的半导体结构被规定为将短路电流快速地限制到可接受的电流值。 为此，当超过预定的饱和电流时，横向沟道区被夹紧，电流被限制在低于饱和电流的值。

公开(公告)号：US5712502A

公开(公告)日：1998-01-27

申请号：US619688

申请日：1996-03-27

申请人： Heinz Mitlehner ,  Dietrich Stephani ,  Ulrich Weinert

发明人： Heinz Mitlehner ,  Dietrich Stephani ,  Ulrich Weinert

IPC分类号： H01L29/41 ,  H01L29/06 ,  H01L29/10 ,  H01L29/12 ,  H01L29/16 ,  H01L29/20 ,  H01L29/22 ,  H01L29/24 ,  H01L29/78 ,  H01L29/861 ,  H01L29/872 ,  H01L29/76 ,  H01L23/58 ,  H01L27/095

CPC分类号： H01L29/0615 ,  H01L29/1608 ,  H01L29/7811 ,  H01L29/861 ,  H01L29/872 ,  H01L29/0661 ,  H01L29/1095 ,  H01L29/1602 ,  H01L29/20 ,  H01L29/22 ,  H01L2924/0002

摘要： An n- or p-doped semiconductor region accommodates the depletion zone of an active area of the semiconductor component with a vertical extension dependent upon an applied blocking voltage. The junction termination for the active area is constituted with a semiconductor doped oppositely to the semiconductor region, and is arranged immediately adjacently around the active area on or in a surface of the semiconductor region. The lateral extension of the junction termination is greater than the maximum vertical extension of the depletion zone, and the semiconductor region as well as the junction termination are constituted with a semiconductor with a band gap of at least 2 eV.

摘要翻译： PCT No.PCT / DE95 / 00935 Sec。 371日期：1996年3月27日 102（e）1996年3月27日PCT提交1995年7月14日PCT公布。 出版物WO96 / 03774 日期1996年2月8日n或p掺杂半导体区域根据施加的阻断电压适应具有垂直延伸的半导体部件的有效区域的耗尽区。 用于有源区的接合端接由与半导体区相反掺杂的半导体构成，并且在半导体区的表面上或其表面上的有源区周围相邻设置。 连接终端的横向延伸大于耗尽区的最大垂直延伸，并且半导体区以及结终端由具有至少2eV的带隙的半导体构成。

公开(公告)号：US4843507A

公开(公告)日：1989-06-27

申请号：US126771

申请日：1987-11-30

申请人： Herbert Schewe ,  Dietrich Stephani ,  Armin Lenhart

发明人： Herbert Schewe ,  Dietrich Stephani ,  Armin Lenhart

IPC分类号： G11B5/127 ,  G11B5/23

CPC分类号： G11B5/23 ,  G11B5/1278

摘要： A magnetic head having layered structure for a recording medium for vertical magnetization contains a conductor body on a non-magnetic substrate for conducting the magnetic flux with two magnet legs, the end pieces of which form a thin main pole and a comparatively thicker auxiliary pole. The two magnetic poles are separated by an insulating gap layer of at least 5 .mu.m. This magnetic head and particularly its gap layer should be relatively simple to produce. Recesses are provided in the substrate to submerge at least the end piece of the auxiliary pole of one magnet leg and an adjoining part of this leg as well as at least part of the gap layer.

摘要翻译： 具有用于垂直磁化的记录介质的分层结构的磁头包含在非磁性基板上的导体，用于传导具有两个磁极腿的磁通量，其末端形成薄的主极和较厚的辅助极。 两个磁极由至少5μm的绝缘间隙层隔开。 这种磁头，特别是其间隙层应该相对简单的制造。 凹槽设置在基底中以至少浸没一个磁铁支腿的辅助极端和该腿的相邻部分的端片以及间隙层的至少一部分。

公开(公告)号：US4735920A

公开(公告)日：1988-04-05

申请号：US10961

申请日：1987-02-04

申请人： Dietrich Stephani ,  Peter Lanig ,  Guenther Ziegler

发明人： Dietrich Stephani ,  Peter Lanig ,  Guenther Ziegler

IPC分类号： C23F4/00 ,  H01L21/04 ,  H01L21/42 ,  H01L21/467

CPC分类号： H01L21/0475 ,  Y10S148/148 ,  Y10S438/945

摘要： A method for structuring silicon carbide by photolithography and plasma etching wherein a substrate of silicon carbide is covered on a flat side with a structured silicon layer, and the plasma etching is then carried out with a gaseous mixture of a halogenated hydrocarbon and oxygen, the oxygen being present in an amount of at least 40% and preferably 70 to 95% by volume.

摘要翻译： 通过光刻和等离子体蚀刻来形成碳化硅的方法，其中碳化硅衬底在平坦的一侧覆盖有结构硅层，然后用卤代烃和氧气的气体混合物进行等离子体蚀刻，氧气 以至少40％，优选为70〜95体积％的量存在。

公开(公告)号：US20120091471A1

公开(公告)日：2012-04-19

申请号：US13340192

申请日：2011-12-29

申请人： Alexandre ELLISON ,  Björn Magnusson ,  Asko Vehanen ,  Dietrich Stephani ,  Heinz Mitlehner ,  Peter Friedrichs

发明人： Alexandre ELLISON ,  Björn Magnusson ,  Asko Vehanen ,  Dietrich Stephani ,  Heinz Mitlehner ,  Peter Friedrichs

IPC分类号： H01L29/739 ,  H01L29/24

CPC分类号： H01L29/7395 ,  C30B25/00 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/0455 ,  H01L29/1608 ,  H01L29/66068 ,  Y10S438/931

摘要： A semiconductor device including a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side. A first contact electrode is arranged at the front side of the drift zone. A control region is arranged at the front side and controls an injection of carriers of at least the first conductivity type into the drift zone. A second contact electrode is arranged at the backside of the drift zone. The drift zone is arranged to carry a carrier flow between the first and the second contact electrode. The drift zone includes a silicon carbide wafer with a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns.

摘要翻译： 一种半导体器件，包括用作具有正面和背面的衬底层的第一导电类型的漂移区。 第一接触电极布置在漂移区的前侧。 控制区域布置在前侧，并且控制至少第一导电类型的载流子注入漂移区。 第二接触电极布置在漂移区的背面。 漂移区布置成在第一和第二接触电极之间承载载流子。 漂移区包括净载流子浓度小于1015cm-3且载流子寿命至少为50ns的碳化硅晶片。

公开(公告)号：US07482068B2

公开(公告)日：2009-01-27

申请号：US10526059

申请日：2003-08-22

申请人： Alexandre Ellison ,  Björn Magnusson ,  Asko Vehanen ,  Dietrich Stephani ,  Heinz Mitlehner ,  Peter Friedrichs

发明人： Alexandre Ellison ,  Björn Magnusson ,  Asko Vehanen ,  Dietrich Stephani ,  Heinz Mitlehner ,  Peter Friedrichs

IPC分类号： B32B18/00 ,  C30B23/00 ,  H01L31/0312 ,  H01L29/00 ,  H01L29/30 ,  H01L29/12

CPC分类号： H01L29/7395 ,  C30B25/00 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/0455 ,  H01L29/1608 ,  H01L29/66068 ,  Y10S438/931

摘要： A uniform silicon carbide single crystal with either an n-type or a p-type conductivity. The crystal has a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns at room temperature.

摘要翻译： 具有n型或p型导电性的均匀碳化硅单晶。 晶体的净载流子浓度小于1015cm-3，载流子寿命在室温下至少为50ns。

公开(公告)号：US06459108B1

公开(公告)日：2002-10-01

申请号：US09426424

申请日：1999-10-25

申请人： Wolfgang Bartsch ,  Heinz Mitlehner ,  Dietrich Stephani

发明人： Wolfgang Bartsch ,  Heinz Mitlehner ,  Dietrich Stephani

IPC分类号： H01L2980

CPC分类号： H01L29/1608 ,  H01L29/8083 ,  H02H9/02

摘要： The semiconductor configuration is formed with a lateral channel region and an adjoining vertical channel region in an n-conductive first semiconductor region. When a predetermined saturation current is exceeded, the lateral channel region is pinched off and the current is limited to a value below the saturation current.

摘要翻译： 半导体结构形成在n导电的第一半导体区域中的横向沟道区域和相邻的垂直沟道区域。 当超过预定的饱和电流时，横向沟道区被夹断，电流被限制在低于饱和电流的值。

公开(公告)号：US08097524B2

公开(公告)日：2012-01-17

申请号：US12352793

申请日：2009-01-13

申请人： Alexandre Ellison ,  Björn Magnusson ,  Asko Vehanen ,  Dietrich Stephani ,  Heinz Mitlehner ,  Peter Friedrichs

发明人： Alexandre Ellison ,  Björn Magnusson ,  Asko Vehanen ,  Dietrich Stephani ,  Heinz Mitlehner ,  Peter Friedrichs

IPC分类号： C30B15/14

CPC分类号： H01L29/7395 ,  C30B25/00 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/0455 ,  H01L29/1608 ,  H01L29/66068 ,  Y10S438/931

摘要： A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5×1014 cm−3, and a concentration of transition metals impurities less than 5×1014 cm−3. Intrinsic defects in the crystal are minimised. The intrinsic defects include silicon vacancies or carbon vacancies. The crystal is annealed for a desired time at a temperature above 700° C. in an atmosphere containing any of the gases hydrogen or a mixture of hydrogen and an inert gas, such that the density of intrinsic defects and any associated defects is decreased to a concentration low enough to confer to the crystal a desired carrier life time of at least 50 ns at room temperature.

摘要翻译： 一种碳化硅单晶的制造方法。 生长碳化硅单晶。 该晶体的硼浓度小于5×1014cm-3，过渡金属杂质浓度小于5×1014cm-3。 晶体中的固有缺陷被最小化。 内在缺陷包括硅空位或碳空位。 在包含任何气体氢气或氢气和惰性气体的混合物的气氛中，在高于700℃的温度下将晶体退火所需时间，使得本征缺陷和任何相关缺陷的密度降低到 浓度足够低以使晶体在室温下达到至少50ns的所需载流子寿命。