Head lamp with integrated microwave antenna
    1.
    发明授权
    Head lamp with integrated microwave antenna 失效
    带集成微波天线的头灯

    公开(公告)号:US5963172A

    公开(公告)日:1999-10-05

    申请号:US945480

    申请日:1997-10-28

    摘要: A headlight with an integrated microwave antenna is provided with a rotationally-symmetrical, paraboloid reflector (21) and direct, lateral radiation of the microwaves. An electrical feeder element (15) is disposed to the side of the reflector (21) and, seen in the radiation direction (14), with suitable spacing in front of a light source (13). The arrangement of the feeder element (15) of the microwave system according to some embodiments is such that the radar beam is directed and bundled over the upper half of the reflector. The beam path for the light source is represented by the respective edge beams (131) and (132). The beam path for the feeder element (15) of the microwave system is represented by the respective edge beams (151) and (152). The optical system with its light source (13) and the microwave system with its feeder element (15) and/or receiver element are functionally and spatially configured and disposed completely separately from one another. Being separately optimized, the two systems can then be adjusted together in the common housing of the headlight.

    摘要翻译: PCT No.PCT / DE96 / 02454 Sec。 371日期1997年10月28日第 102(e)1997年10月28日PCT PCT 1996年12月19日PCT公布。 出版物WO97 / 32357 日期1997年9月4日具有集成微波天线的头灯具有旋转对称的抛物面反射器(21)和微波的直接横向辐射。 馈电元件(15)设置在反射器(21)的侧面,并且在辐射方向(14)处看到,在光源(13)的前面具有合适的间隔。 根据一些实施例的微波系统的馈电元件(15)的布置使得雷达波束被引导并聚集在反射器的上半部上。 用于光源的光束路径由相应的边缘光束(131)和(132)表示。 用于微波系统的馈电元件(15)的光束路径由相应的边缘光束(151)和(152)表示。 具有其光源(13)的光学系统和具有其馈线元件(15)和/或接收器元件的微波系统在功能和空间上被构造和完全彼此分离设置。 分别优化后,两个系统可以在头灯的共同外壳中一起调整。

    Device for the transmission and /or reception of radar beams
    2.
    发明授权
    Device for the transmission and /or reception of radar beams 失效
    用于发射和/或接收雷达波束的装置

    公开(公告)号:US06759987B2

    公开(公告)日:2004-07-06

    申请号:US10240586

    申请日:2002-10-02

    IPC分类号: H01Q138

    摘要: The device has a printed-circuit board (5), on one side of which at least one antenna (1) is located and, on the other side of which electrical circuits (3) are located. An electromagnetic shield between the antenna (1) and the electrical circuits (3) is realized in a manner that is simple with regard for production engineering by locating a feeder network (13, 15)—developed using a coplanar circuit technique and with which the at least one antenna (1) is contacted—on the antenna-side surface of the printed-circuit board (5), and by covering the antenna-side surface of the printed-circuit board (5) with the connected-to-ground outer conductor (45) of the coplanar circuit to such an extent that the required shield between the antenna (1) and the electrical circuits (3) is produced as a result.

    摘要翻译: 该装置具有印刷电路板(5),其一侧位于至少一个天线(1),并且其另一侧设有电路(3)。 天线(1)和电路(3)之间的电磁屏蔽是通过定位使用共面电路技术开发的馈电网络(13,15)而以生产工程简单的方式实现的,并且 至少一个天线(1)与印刷电路板(5)的天线侧表面接触,并且通过用连接到地面的方式覆盖印刷电路板(5)的天线侧表面 外部导体(45),从而产生天线(1)和电路(3)之间所需的屏蔽。

    Resonator structure comprising metal coated tubular carrier and having
slits in the metal coating
    4.
    发明授权
    Resonator structure comprising metal coated tubular carrier and having slits in the metal coating 失效
    谐振器结构包括金属涂覆的管状载体并且在金属涂层中具有狭缝

    公开(公告)号:US4742320A

    公开(公告)日:1988-05-03

    申请号:US843798

    申请日:1986-03-26

    IPC分类号: H01P1/203 H01P7/08 H01P7/00

    CPC分类号: H01P7/082

    摘要: To improve the space factor of a barium titanate resonator, the resonator is a tubular carrier (11) having metal layers on the inner and outer surfaces. At least one of the metal layers is axially interrupted by a slit. Terminal connections for the resonator are located adjacent the slit on the interrupted layer, and on the continuous layer. For shielding, preferably, the continuous layers at the outside and end tabs (FIG. 4) may additionally be provided. More than one axially staggered inner/outer electrode layer system may be provided on one tubular carrier.

    摘要翻译: 为了提高钛酸钡谐振器的空间因子,谐振器是在内表面和外表面上具有金属层的管状载体(11)。 金属层中的至少一个被狭缝轴向地中断。 谐振器的端子连接位于中断层上的狭缝和连续层上。 为了屏蔽,优选地,可以另外设置在外部和端部突出部处的连续层(图4)。 可以在一个管状载体上设置多于一个轴向交错的内/外电极层系统。

    Intergrated semiconductor component for high-frequency measurement and use thereof
    8.
    发明授权
    Intergrated semiconductor component for high-frequency measurement and use thereof 失效
    用于高频测量和使用的集成半导体元件

    公开(公告)号:US07109917B2

    公开(公告)日:2006-09-19

    申请号:US10494660

    申请日:2002-08-16

    IPC分类号: G01S7/28 G01S13/93

    摘要: It is provided that the semiconductor component is a component of a semiconductor circuit (10) comprising a first silicon layer (12), an adjoining silicon dioxide layer (insulating layer (14)) and a subsequent further silicon layer (structured layer (16)) (SOI wafer), and the semiconductor component comprises an IMPATT oscillator (30), having a resonator (24) which includes a metallized cylinder (18) of silicon, disposed in the structured layer (16); a coupling disk (28) covering the cylinder (18) in the region of the first layer (12); and an IMPATT diode (32), communicating with the cylinder (18) of the resonator (24) via a recess (38) in the coupling disk (28); and a reference oscillator (46) of lower frequency, having a resonator (24) which includes a metal cylinder (18) of silicon, disposed in the structured layer (16), and coupling disk (28) covering the cylinder in the region of the first layer (12); and a microwave conductor, communicating with the cylinder (18) of the resonator (24) via a recess (38) in the coupling disk (28), and the reference oscillator, via an active oscillator circuit (58), serves the purpose of frequency stabilization of the IMPATT oscillator (30); with integrated Schottky diodes; and a transmitting and receiving antenna (49).

    摘要翻译: 提供了半导体部件是包括第一硅层(12),邻接的二氧化硅层(绝缘层(14))和随后的另外的硅层(结构层(16))的半导体电路(10)的部件, )(SOI晶片),并且所述半导体部件包括具有设置在所述结构化层(16)中的包括硅的金属化圆柱体(18)的谐振器(24)的IMPATT振荡器(30)。 在所述第一层(12)的区域中覆盖所述圆筒(18)的联接盘(28); 和通过所述耦合盘(28)中的凹槽(38)与所述谐振器(24)的所述气缸(18)连通的IMPATT二极管(32)。 和具有较低频率的参考振荡器(46),具有设置在所述结构化层(16)中的包括硅的金属圆筒(18)的谐振器(24)和覆盖所述圆筒的耦合盘(28) 第一层(12); 和经由有源振荡电路(58)经由耦合盘(28)中的凹槽(38)与谐振器(24)的气缸(18)连通的微波导体,以及基准振荡器,用于 IMPATT振荡器(30)的频率稳定; 集成肖特基二极管; 和发射和接收天线(49)。

    Microwave sensor for determining position for displacement of a movable part, such as a valve needle
    9.
    发明授权
    Microwave sensor for determining position for displacement of a movable part, such as a valve needle 失效
    微波传感器,用于确定可移动部件(例如阀针)的位移位置

    公开(公告)号:US06359445B1

    公开(公告)日:2002-03-19

    申请号:US09308472

    申请日:1999-05-17

    IPC分类号: G01F1700

    CPC分类号: G01D5/48

    摘要: The microwave sensor produces an electrical output signal according to a position or displacement of a movable mechanical part (2), especially a valve needle in an injector valve for injecting fuel into an internal combustion engine. This position or displacement sensor includes a cavity resonator (40,70) provided with walls bounding a cavity (4,7) dimensioned for microwaves of a predetermined frequency and an antenna (8,14) for reception of the microwaves in the cavity. The end (3) of the movable mechanical part (2) protrudes into the cavity. A hybrid evaluating circuit (9) is connected with the antenna, which detects changes in the microwave radiation fed into and coupled out of the cavity, e.g. phase relationships, which depend on the position of the mechanical part (2), so that small position changes in very tight spaces are accurately determined.

    摘要翻译: 微波传感器根据可移动机械部件(2)的位置或位移产生电输出信号,特别是用于将燃料喷射到内燃机中的喷射阀中的阀针。 该位置或位移传感器包括空腔谐振器(40,70),空腔谐振器(40,70)设置有限定用于预定频率的微波的空腔(4,7)的壁和用于接收空腔中的微波的天线(8,14)。 可移动机械部件(2)的端部(3)突出到空腔中。 混合评估电路(9)与天线连接,该天线检测馈入和耦合出腔的微波辐射的变化。 相位关系,其取决于机械部件(2)的位置,使得在非常狭窄的空间中的小位置变化被准确地确定。

    High-frequency power transistor
    10.
    发明授权
    High-frequency power transistor 失效
    高频功率晶体管

    公开(公告)号:US5032886A

    公开(公告)日:1991-07-16

    申请号:US335785

    申请日:1989-03-27

    摘要: A high-frequency power transistor is suggested in which the emitter and base contacts, as well as the collector contacts, occur in a principle plane on the silicon layer. A metallization can be arranged on the oppositely located second principle plane, which enables a connection with the heat sink in an easy manner. Shield grids can be provided within the substrate in order to compensate for the effect of unwanted depletion-layer diodes to a great extent.

    摘要翻译: PCT No.PCT / DE87 / 00397 Sec。 371日期:1989年3月27日 102(e)日期1989年3月27日PCT提交1987年9月2日PCT公布。 出版物WO88 / 02554 日期:1988年4月7日。提出了一种高频功率晶体管,其中发射极和基极接触以及集电极触点发生在硅层上的主平面中。 金属化可以布置在相对位置的第二主平面上,这使得能够以容易的方式与散热器连接。 可以在衬底内提供屏蔽栅,以便在很大程度上补偿不需要的耗尽层二极管的影响。