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24 条记录 (耗时 0.016 秒)

    Preparing highly thermoresistant relief structures
    1.
    发明授权
    Preparing highly thermoresistant relief structures 失效
    制备高度热稳定性结构

    公开(公告)号：US5104773A

    公开(公告)日：1992-04-14

    申请号：US501600

    申请日：1990-03-29

    申请人： Hellmut Ahne ,  Albert Hammerschmidt ,  Erwin Schmidt

    发明人： Hellmut Ahne ,  Albert Hammerschmidt ,  Erwin Schmidt

    IPC分类号： C08G73/22 ,  C08L79/04 ,  G03F7/038 ,  G03F7/039 ,  G03F7/40 ,  H01L21/027 ,  H01L21/30

    CPC分类号： G03F7/0387 ,  G03F7/039 ,  Y10S430/146

    摘要： Highly thermoresistant relief structures can be produced simply and cost-effectively from polybenzoxazole precursors which do not have any polymerizable groups, respectively without any photoactive components being present, when soluble hydroxypolyamides are applied in the form of a layer or film on a substrate and are irradiated through a mask by means of an UV-excimer laser with a power density >10.sup.5 W/cm.sup.2 per pulse, and are developed with an aqueous-alkaline developing agent and subsequently tempered.

    摘要翻译： 当将可溶性羟基聚酰胺以基层上的层或膜的形式施用并且被照射时，可以简单且经济地制造不具有任何可聚合基团的聚苯并恶唑前体，分别不存在任何光活性组分的高度耐热消除结构 通过具有每个脉冲功率密度> 105W / cm 2的UV-准分子激光器的掩模，并且用含水碱性显影剂显影并随后回火。

    Photosensitive mixture
    2.
    发明授权
    Photosensitive mixture 失效
    感光性混合物

    公开(公告)号：US5081000A

    公开(公告)日：1992-01-14

    申请号：US494614

    申请日：1990-03-16

    申请人： Eberhard Kuehn ,  Albert Hammerschmidt ,  Erwin Schmidt ,  Hellmut Ahne

    发明人： Eberhard Kuehn ,  Albert Hammerschmidt ,  Erwin Schmidt ,  Hellmut Ahne

    IPC分类号： G03F7/038 ,  C08K5/3432 ,  C08L101/00 ,  G03F7/004 ,  G03F7/26 ,  H01L21/027 ,  H01L21/30

    CPC分类号： G03F7/004 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/107 ,  Y10S430/111

    摘要： The invention provides photosensitive mixtures consisting of a polymer and a photoactive component which meet the requirements placed on photoresists. The polymer has carboxylic acid anhydride groups or phenolic hydroxyl groups and the photoactive component is an N-alkylated or N-arylated 1.4-dihydropyridine or a 1.4- dihydropyridine derivative of the following structure: ##STR1## where the R group is a (substituted) aryl group, which, in the ortho position to the bond with the dihydropyridine ring, carries a NO.sub.2 group; and R.sup.3 is alkyl, cyclohexyl or phenyl.

    摘要翻译： 本发明提供由聚合物和光活性组分组成的感光性混合物，其满足光刻胶的要求。 聚合物具有羧酸酐基团或酚羟基，光活性组分是以下结构的N-烷基化或N-芳基化的1,4-二氢吡啶或1,4-二氢吡啶衍生物：其中R基团是（取代的） 在与二氢吡啶环的键的邻位携带NO 2基团的芳基; 并且R 3是烷基，环己基或苯基。

    Connection and build-up technique for multichip modules
    3.
    发明授权
    Connection and build-up technique for multichip modules 失效
    多芯片模块的连接和建立技术

    公开(公告)号：US5556812A

    公开(公告)日：1996-09-17

    申请号：US495246

    申请日：1995-06-27

    申请人： Rainer Leuschner ,  Hellmut Ahne ,  Siegfried Birkle ,  Albert Hammerschmidt ,  Recai Sezi ,  Tobias Noll ,  Ann Dumoulin

    发明人： Rainer Leuschner ,  Hellmut Ahne ,  Siegfried Birkle ,  Albert Hammerschmidt ,  Recai Sezi ,  Tobias Noll ,  Ann Dumoulin

    IPC分类号： G03F7/075 ,  C23C14/20 ,  G03F7/26 ,  H01L21/48 ,  H05K3/00 ,  H05K3/02 ,  H05K3/04 ,  H05K3/10 ,  H05K3/18 ,  H05K3/38 ,  H05K3/46 ,  H01L21/60

    CPC分类号： H01L21/4846 ,  H01L21/4857 ,  H05K3/465 ,  H01L2924/0002 ,  H05K2203/072 ,  H05K3/0023 ,  H05K3/0041 ,  H05K3/048 ,  H05K3/184 ,  H05K3/388 ,  H05K3/4661

    摘要： A method for manufacturing multichip modules having layer sequences made of dielectric material with conducting tracks embedded therein is characterized by the following features: (1) a temperature-resistant, base-resistant polymer having a dielectric constant .ltoreq.3 is used as a dielectric material, which is applied to a non-conductive substrate and serves as an edge boundary for currentless, autocatalytic build-up of the conducting tracks; (2) the dielectric material is provided with a layer made of material which is soluble in organic solvents (lift-off layer); (3) the dielectric material and the lift-off layer are structured in a single lithographic step, either a direct or an indirect structuring taking place and grooves having an aspect ratio .gtoreq.1 being formed in the dielectric material; (4) a metallic seed layer is applied to the dielectric material or rather to the lift-off layer through vapor deposition in a directed manner; (5) the lift-off layer is removed using an organic solvent; and (6) conducting tracks are created in the grooves through currentless metal deposition.

    摘要翻译： 制造具有由介电材料制成的具有导电轨迹的层序列的多芯片模块的方法的特征在于具有以下特征：（1）具有介电常数<3的耐温耐碱聚合物用作电介质 材料，其被施加到非导电衬底并且用作导电轨道的无电流，自动催化积聚的边界; （2）介电材料设有可溶于有机溶剂（剥离层）的材料制成的层; （3）电介质材料和剥离层在单个光刻步骤中构成，直接或间接构造发生，并且在电介质材料中形成具有纵横比大于等于1的沟槽; （4）通过气相沉积以有向的方式将金属种子层施加到电介质材料上或者相对于剥离层; （5）使用有机溶剂除去剥离层; 并且通过无电流金属沉积在凹槽中产生（6）导电轨迹。

    Highly heat-resistant positive resists comprising end-capped hydroxypolyamides
    4.
    发明授权
    Highly heat-resistant positive resists comprising end-capped hydroxypolyamides 失效
    包含封端的羟基聚酰胺的高耐热正性抗蚀剂

    公开(公告)号：US5376499A

    公开(公告)日：1994-12-27

    申请号：US880139

    申请日：1992-05-07

    申请人： Albert Hammerschmidt ,  Siegfried Birkle ,  Hellmut Ahne

    发明人： Albert Hammerschmidt ,  Siegfried Birkle ,  Hellmut Ahne

    IPC分类号： C08L77/10 ,  C08G73/10 ,  C08L77/00 ,  G03F7/022 ,  G03F7/023 ,  G03F7/037 ,  G03F7/039 ,  G03F7/30 ,  G03F7/40 ,  H01L21/027 ,  H01L21/312

    CPC分类号： G03F7/0233 ,  Y10S430/107

    摘要： Cost-effective, highly heat-resistant positive resists based on oligomer and/or polymer polybenzoxazole precursors and diazo quinones possess a high [level of] stability in storage when the polybenzoxazole precursors are hydroxypolyamides of the following structure: ##STR1## whereby R, R*, R.sub.1, R*.sub.1, and R.sub.2 are aromatic groups, R.sub.3 is an aliphatic, cycloaliphatic or aromatic group having at least one alkenyl or alkynyl grouping and, with respect to n.sub.1, n.sub.2 and n.sub.3, the following applies:n.sub.1 =1 to 100, n.sub.3 and n.sub.3 =0 orn.sub.1 and n.sub.2 =1 to 100, n.sub.3 =0 orn.sub.2 =1 to 100, n.sub.1 and n.sub.3 =0 orn.sub.1, n.sub.2 and n.sub.3 =1 to 100 (whereby R.noteq.R* and/or R.noteq.R*.sub.1) orn.sub.1 and n.sub.3 =1 to 100, n.sub.2 =0 (whereby R.noteq.R* and/or R.sub.1 .noteq.R*.sub.1) ,provided that: n.sub.1 +n.sub.2 +n.sub.3 >3.

    摘要翻译： 当聚苯并恶唑前体是具有以下结构的羟基酰胺时，基于低聚物和/或聚合物聚苯并恶唑前体和重氮醌的成本有效的高耐热正性抗蚀剂在储存中具有高的[水平的]稳定性： + TR 3。

    Method for manufacturing highly heat-resistant dielectrics
    6.
    发明授权
    Method for manufacturing highly heat-resistant dielectrics 失效
    制造高耐热电介质的方法

    公开(公告)号：US4965134A

    公开(公告)日：1990-10-23

    申请号：US191388

    申请日：1988-05-09

    申请人： Hellmut Ahne ,  Albert Hammerschmidt

    发明人： Hellmut Ahne ,  Albert Hammerschmidt

    IPC分类号： C08G73/22 ,  H01B3/30

    CPC分类号： C08G73/22 ,  H01B3/303 ,  Y10T428/31504 ,  Y10T428/31725

    摘要： A method for manufacturing highly heat resistant dielectrics is provided wherein an oligomeric and/or polymeric hydroxypolyamide is dissolved in an organic solvent and then applied to a substrate. The solvent is removed and the hydroxypolyamide is converted into a polybenzoxazole by annealing at a temperature of between 200.degree. to 500.degree. C. The resulting dielectrics are stable up to 550.degree. C. and have a continuous temperature resistance of more than 3 hours at 470.degree. C. The dielectrics are particularly well suited for applications in microelectronics.

    摘要翻译： 提供了制造高耐热电介质的方法，其中将低聚和/或聚合羟基聚酰胺溶解在有机溶剂中，然后施加到基底上。 除去溶剂，通过在200-500℃的温度下退火将羟基聚酰胺转化为聚苯并恶唑。所得到的电介质在550℃下是稳定的，并且在470℃下具有超过3小时的连续耐温性 电介质特别适用于微电子学领域。

    Negative resists with high thermal stability comprising end capped polybenzoxazole and bisazide
    9.
    发明授权
    Negative resists with high thermal stability comprising end capped polybenzoxazole and bisazide 失效
    具有高热稳定性的负阻抗剂包括封端的聚苯并恶唑和双叠氮化物

    公开(公告)号：US5486447A

    公开(公告)日：1996-01-23

    申请号：US330227

    申请日：1994-10-27

    申请人： Albert Hammerschmidt ,  Eberhard Kuhn ,  Erwin Schmidt

    发明人： Albert Hammerschmidt ,  Eberhard Kuhn ,  Erwin Schmidt

    IPC分类号： G03F7/008 ,  C08G73/22 ,  C08L71/00 ,  C08L79/06 ,  G03F7/012 ,  G03F7/037 ,  G03F7/038 ,  H01L21/027 ,  G03F7/40

    CPC分类号： G03F7/0387 ,  G03F7/0125 ,  Y10S430/107

    摘要： Cost-effective, negative resists having high thermal stability based on oligomeric and/or polymeric polybenzoxazole precursors are disclosed. Also disclosed are resist solutions having a high level of storage stability when they contain a photoactive component in the form of a bisazide and when the polybenzoxazole precursors are hydroxypolyamides having the following structure: ##STR1## where R, R*, R.sub.1, R.sub.1 * and R.sub.2 are aromatic groups, R.sub.3 is an aromatic group or a norbornene residue, and wherein n.sub.1, n.sub.2 and n.sub.3, are defined as follows:n.sub.1 =1 to 100, n.sub.2 and n.sub.3 =0 orn.sub.1 and n.sub.2 =1 to 100, n.sub.3 =0 orn.sub.2 =1 to 100, n.sub.1 and n.sub.3 =0 orn.sub.1, n.sub.2 and n.sub.3 =1 to 100 (with R.noteq.R* or R.sub.1 .noteq.R.sub.1 * or both) orn.sub.1 and n.sub.3 =1 to 100, n.sub.2 =0 (with R.noteq.R* or R.sub.1 .noteq.R.sub.1 * or both),on the condition that: n.sub.1 +n.sub.2 +n.sub.3 .gtoreq.3.

    摘要翻译： 公开了基于低聚和/或聚合的聚苯并恶唑前体的具有高热稳定性的成本有效的负性抗蚀剂。 还公开了当它们含有双叠氮化物形式的光活性组分时以及当聚苯并恶唑前体是具有以下结构的羟基聚酰胺时具有高水平储存稳定性的抗蚀剂溶液：其中R，R *， R1，R1 *和R2是芳基，R3是芳族基团或降冰片烯残基，其中n1，n2和n3定义如下：n1 = 1〜100，n2和n3 = 0或n1，n2 = 1 至100，n3 = 0或n2 = 1至100，n1和n3 = 0或n1，n2和n3 = 1至100（使用R NOTEQUAL R *或R1 NOTEQUAL R1 *或两者）或n1和n3 = 1至100 在n1 + n2 + n3> / = 3的条件下，n2 = 0（使用R NOTEQUAL R *或R1 NOTEQUAL R1 *或两者）。