公开(公告)号：US20090197410A1

公开(公告)日：2009-08-06

申请号：US12306096

申请日：2007-06-21

申请人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano

发明人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： H01L21/443

CPC分类号： C23C16/34 ,  C23C16/52 ,  H01L21/28097 ,  H01L21/28556 ,  H01L29/4975 ,  H01L29/517

摘要： A substrate is disposed in a processing chamber. An organic Ta compound gas having Ta═N bond, a Si-containing gas and a N-containing gas are introduced into the processing chamber to form a TaSiN film on the substrate by CVD. In this film formation, at least one of a partial pressure of the Si-containing gas in the processing chamber, a total pressure in the processing chamber, a film forming temperature and a partial pressure of the N-containing gas in the processing chamber is controlled to thereby regulate Si concentration in the film. Particularly, when SiH4 gas is used as the Si-containing gas, the SiH4 gas partial pressure is determined based on the fact that the serried Si concentration in the film under giving process conditions can be expressed as a linear function involving the logarithm of the partial pressure of the SiH4 gas.

摘要翻译： 衬底设置在处理室中。 将具有Ta-N键的有机Ta化合物气体，含Si气体和含N气体引入到处理室中，通过CVD在衬底上形成TaSiN膜。 在该膜形成中，处理室中的含Si气体的分压，处理室中的总压，成膜温度和处理室中的含N气体的分压中的至少一个为 从而调节膜中的Si浓度。 特别地，当使用SiH 4气体作为含Si气体时，SiH 4气体分压基于以下事实来确定：在给定工艺条件下膜中的塞状Si浓度可以表示为包括部分的对数的线性函数 SiH4气体的压力。

公开(公告)号：US20060068097A1

公开(公告)日：2006-03-30

申请号：US10711717

申请日：2004-09-30

申请人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Paul Jamison

发明人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Paul Jamison

IPC分类号： C23C16/00

CPC分类号： H01L21/28556 ,  C23C16/16 ,  H01L21/28079 ,  H01L21/28247 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76856 ,  H01L29/517

摘要： A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a chemical vapor deposition process, and forming a passivation layer on the rhenium metal layer to thereby inhibit oxygen-induced growth of rhenium-containing nodules on the rhenium metal surface.

摘要翻译： 用于形成钝化金属层的方法，其在随后暴露于含氧环境期间保持下面的金属层的性质和形态。 该方法包括在处理室中提供衬底，将衬底暴露于含有铼 - 羰基前体的工艺气体，以在化学气相沉积工艺中在衬底上沉积铼金属层，以及在铼金属层上形成钝化层 从而抑制铼金属表面上含铼结核的氧诱导生长。

公开(公告)号：US20090142491A1

公开(公告)日：2009-06-04

申请号：US11988298

申请日：2006-07-07

申请人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano

发明人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： C23C16/44

CPC分类号： C23C16/46 ,  C23C16/34 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/76843

摘要： The present invention is a method of film deposition that comprises a first gas-supplying step of supplying a high-melting-point organometallic material gas to a processing vessel that can be evacuated, and a second gas-supplying step of supplying, to the processing vessel, a gas consisting of one, or two or more gases selected from a nitrogen-containing gas, a silicon-containing gas, and a carbon-containing gas, wherein a thin metallic compound film composed of one, or two or more compounds selected from a high-melting-point metallic nitride, a high-melting-point metallic silicate, and a high-melting-point metallic carbide is deposited on the surface of an object to be processed, placed in the processing vessel. The first and second gas-supplying steps are alternately carried out, and in these steps, the object to be processed is held at a temperature equal to or higher than the decomposition-starting temperature of the high-melting-point organometallic material.

摘要翻译： 本发明是一种薄膜沉积方法，其包括向能够抽真空的处理容器供给高熔点有机金属材料气体的第一气体供给步骤和向处理过程中供给第二气体供给步骤 容器，由选自含氮气体，含硅气体和含碳气体中的一种或两种或更多种气体组成的气体，其中选择由一种或两种或更多种化合物组成的薄金属化合物膜 从高熔点金属氮化物，高熔点金属硅酸盐和高熔点金属碳化物沉积在被处理物体的表面上，放置在处理容器中。 交替进行第一和第二供气步骤，在这些步骤中，待处理物体保持在高熔点有机金属材料的分解 - 起始温度以上的温度。

公开(公告)号：US07189431B2

公开(公告)日：2007-03-13

申请号：US10711717

申请日：2004-09-30

申请人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Yumiko Kawano ,  Gert J. Leusink ,  Fenton R. McFeely ,  Paul Jamison

发明人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Yumiko Kawano ,  Gert J. Leusink ,  Fenton R. McFeely ,  Paul Jamison

IPC分类号： C23C16/16

CPC分类号： H01L21/28556 ,  C23C16/16 ,  H01L21/28079 ,  H01L21/28247 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76856 ,  H01L29/517

摘要： A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a chemical vapor deposition process, and forming a passivation layer on the rhenium metal layer to thereby inhibit oxygen-induced growth of rhenium-containing nodules on the rhenium metal surface.

摘要翻译： 用于形成钝化金属层的方法，其在随后暴露于含氧环境期间保持下面的金属层的性质和形态。 该方法包括在处理室中提供衬底，将衬底暴露于含有铼 - 羰基前体的工艺气体，以在化学气相沉积工艺中在衬底上沉积铼金属层，以及在铼金属层上形成钝化层 从而抑制铼金属表面上含铼结核的氧诱导生长。

公开(公告)号：US07063871B2

公开(公告)日：2006-06-20

申请号：US10617819

申请日：2003-07-14

申请人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Tsukasa Matsuda ,  Taro Ikeda ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Yumiko Kawano ,  Mitsuhiro Tachibana

发明人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Tsukasa Matsuda ,  Taro Ikeda ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Yumiko Kawano ,  Mitsuhiro Tachibana

IPC分类号： C23C16/16

CPC分类号： C23C16/16

摘要： A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.

摘要翻译： 金属CVD法包括将含有羰基金属化合物的气态源材料以与金属羰基化合物具有第一分压的方式相连接的待处理基板的表面的工艺空间引入的工序（A） 以及在金属羰基化合物具有第二较小分压的情况下，通过将含有羰基金属化合物的气态源材料引入到工艺空间中，在基板的表面上沉积金属膜的工序（B）。 进行步骤（A），使得金属膜不会在基板上实质上沉积。

公开(公告)号：US20050227441A1

公开(公告)日：2005-10-13

申请号：US10830804

申请日：2004-03-31

申请人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  John Yurkas ,  Vijay Narayanan

发明人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  John Yurkas ,  Vijay Narayanan

IPC分类号： H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L21/336 ,  C30B1/00 ,  H01L21/20 ,  H01L21/3205 ,  H01L21/36 ,  H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/28088 ,  H01L21/28194 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/517

摘要： A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH3)2)3(NC(C2H5)(CH3)2)) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.

摘要翻译： 一种用于形成含钽栅电极结构的方法，其通过在处理室中提供其上具有高k电介质层的衬底，并在热化学气相沉积工艺中通过暴露在高k电介质层上形成含钽层 将衬底加工成含有TAIMATA（Ta（N（CH 3）2）3）（NC（C 2）2）的工艺气体， （CH 3）2））前体气体。 在本发明的一个实施方案中，含钽层可以包括由含有TAIMATA前体气体，含硅气体和任选的含氮气体的工艺气体形成的TaSiN层。 在本发明的另一实施例中，在TaSiN层上形成TaN层。 TaN层可以由含有TAIMATA前体气体和任选的含氮气体的工艺气体形成。 还提供了可由处理器执行以使处理系统执行该方法的计算机可读介质和用于形成含钽栅电极结构的处理系统。

公开(公告)号：US20090117270A1

公开(公告)日：2009-05-07

申请号：US12088153

申请日：2006-07-25

申请人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Yumiko Kawano

IPC分类号： C23C16/02

CPC分类号： C23C16/0227 ,  C23C16/16 ,  C23C16/34 ,  C23C16/4405

摘要： A method for processing a substrate includes a film forming step of supplying a film forming gas into the processing chamber to form a film on the substrate, a cleaning step of supplying a plasma-exited cleaning gas into the processing chamber after the film forming step to clean the inside of the processing chamber, and a coating step of forming a coating within the processing chamber after the cleaning step. The cleaning step includes a high pressure cleaning of regulating the pressure in the processing chamber so that cleaning is mainly performed by molecules formed by recombining radicals in the cleaning gas, and the coating step includes a low temperature film forming step of forming the coating film under the condition that the temperature of a substrate supporting table is set lower than that in the film formation on the substrate during the film formation step.

摘要翻译： 一种处理基板的方法包括：将成膜气体供给到处理室中以在基板上形成膜的成膜步骤，在成膜步骤之后将等离子体排出的清洗气体供给到处理室中的清洗步骤， 清洁处理室的内部，以及在清洁步骤之后在处理室内形成涂层的涂布步骤。 清洗步骤包括调节处理室中的压力的​​高压清洗，使得清洗主要由通过在清洁气体中重新组合形成的分子进行，并且涂布步骤包括在下面形成涂膜的低温成膜步骤 在成膜步骤中将基板支撑台的温度设定为低于基板上的成膜的条件。

公开(公告)号：US07456109B2

公开(公告)日：2008-11-25

申请号：US10536322

申请日：2003-11-14

申请人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

IPC分类号： H01L21/302

CPC分类号： C23C16/4405 ,  H01J37/32357 ,  H01J37/32862

摘要： A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.

摘要翻译： 一种基板处理器的清洁方法，其减少对基板处理容器中的部件的损坏。 根据本发明的清理处理目标衬底的衬底处理器的衬底处理容器的方法包括：将气体引入到衬底处理器的远程等离子体产生单元中; 通过远程等离子体发生单元激发气体，并产生反应物种; 并从远程等离子体发生单元向处理容器提供反应物质，并且在1333Pa或更大压力下加压处理容器。

公开(公告)号：US07067422B2

公开(公告)日：2006-06-27

申请号：US10830804

申请日：2004-03-31

申请人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano ,  Gert J. Leusink ,  Fenton R. McFeely ,  John J. Yurkas ,  Vijay Narayanan

发明人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano ,  Gert J. Leusink ,  Fenton R. McFeely ,  John J. Yurkas ,  Vijay Narayanan

IPC分类号： H01L21/44

CPC分类号： H01L21/28088 ,  H01L21/28194 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/517

摘要： A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH3)2)3(NC(C2H5)(CH3)2)) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.

摘要翻译： 一种通过在处理室中提供具有高k电介质层的衬底并在热化学气相沉积工艺中在高k电介质层上形成含钽层的方法来形成含钽栅电极结构的方法， 将衬底加工成含有TAIMATA（Ta（N（CH 3）2）3）（NC（C 2）2）的工艺气体， （CH 3）2））前体气体。 在本发明的一个实施方案中，含钽层可以包括由含有TAIMATA前体气体，含硅气体和任选的含氮气体的工艺气体形成的TaSiN层。 在本发明的另一实施例中，在TaSiN层上形成TaN层。 TaN层可以由含有TAIMATA前体气体和任选的含氮气体的工艺气体形成。 还提供了可由处理器执行以使处理系统执行该方法的计算机可读介质和用于形成含钽栅电极结构的处理系统。

公开(公告)号：US20060124151A1

公开(公告)日：2006-06-15

申请号：US10536322

申请日：2003-11-14

申请人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

IPC分类号： B08B6/00

CPC分类号： C23C16/4405 ,  H01J37/32357 ,  H01J37/32862

摘要： A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.

摘要翻译： 一种基板处理器的清洁方法，其减少对基板处理容器中的部件的损坏。 根据本发明的清理处理目标衬底的衬底处理器的衬底处理容器的方法包括：将气体引入到衬底处理器的远程等离子体产生单元中; 通过远程等离子体发生单元激发气体，并产生反应物种; 并从远程等离子体发生单元向处理容器提供反应物质，并且在1333Pa或更大压力下加压处理容器。