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    Wavelength tunable laser apparatus and wavelength control method
    1.
    发明授权
    Wavelength tunable laser apparatus and wavelength control method 有权
    波长可调谐激光装置及波长控制方法

    公开(公告)号：US07733933B2

    公开(公告)日：2010-06-08

    申请号：US11833271

    申请日：2007-08-03

    申请人： Hideo Arimoto ,  Kazuhiro Ito ,  Hiroyasu Sasaki

    发明人： Hideo Arimoto ,  Kazuhiro Ito ,  Hiroyasu Sasaki

    IPC分类号： H01S3/00

    CPC分类号： H01S5/146 ,  H01S5/06255

    摘要： Included are: a gain chip having a gain unit and a phase control region; a current supply for causing a positive current to flow to the phase control region; a voltage supply for applying a bias voltage to the phase control region; and a control unit for selectively driving the current supply or the voltage supply depending on a direction of the wavelength shift. The control unit drives the current supply when a laser wavelength is to be shifted to a shorter wavelength side from a wavelength with the current supply and the voltage supply being turned off, and drives the voltage supply when the laser wavelength is to be shifted to a longer wavelength side from a wavelength with the current supply and the voltage supply being turned off.

    摘要翻译： 包括：具有增益单元和相位控制区域的增益芯片; 用于使正电流流向相位控制区域的电流源; 用于向相位控制区域施加偏置电压的电压源; 以及控制单元，用于根据波长偏移的方向选择性地驱动电流源或电压源。 当激光波长从电流供应和电压供应关闭的波长移动到较短波长侧时，控制单元驱动电流源，并且当激光波长被转移到 来自具有电流供应和电压供应的波长的较长波长侧被关闭。

    BETA-SIALON, METHOD FOR PRODUCING SAME AND LIGHT-EMITTING DEVICE USING SAME
    6.
    发明申请
    BETA-SIALON, METHOD FOR PRODUCING SAME AND LIGHT-EMITTING DEVICE USING SAME 有权
    BETA-SIALON，其制备方法和使用它的发光装置

    公开(公告)号：US20120228551A1

    公开(公告)日：2012-09-13

    申请号：US13508949

    申请日：2010-11-04

    申请人： Hideyuki Emoto ,  Kazuhiro Ito

    发明人： Hideyuki Emoto ,  Kazuhiro Ito

    IPC分类号： C09K11/64

    CPC分类号： C09K11/7734 ,  C09K11/0883 ,  H01L33/50 ,  H05B33/14

    摘要： β-Sialon comprising Eu2+ that is present in a solid solution form in P-sialon represented by Si6-zAlzOzN μm [wherein z is 0.3-1.5], which shows, when excited with light of 450 nm in wavelength, a peak wavelength of fluorescent spectrum of 545-560 nm, a half-value breadth of 55 nm or greater, and an external quantum efficiency of 45% or greater. The p-sialon can be produced by blending at least one kind of oxide selected from aluminum oxide and silicon oxide with silicon nitride and aluminum nitride in such a manner as to give z of 0.3-1.5, further adding thereto a europium compound and a β-sialon powder having an average particle diameter of 5 μm or greater and an average degree of circularity of 0.7 or greater, each in a definite amount, and baking the mixture.

    摘要翻译： ＆bgr; -SiONON，其以Si6-zAlzOzNi [其中z为0.3-1.5]表示的P-sialon中的固溶体形式存在，其表示当用波长为450nm的光激发时，其峰值波长为 545-560nm的荧光光谱，55nm以上的半值宽度，45％以上的外部量子效率。 p型赛隆可以通过将选自氧化铝和氧化硅中的至少一种氧化物与氮化硅和氮化铝以使得z为0.3-1.5的方式共混而制备，进一步加入铕化合物和＆bgr ;平均粒径为5μm以上，平均圆形度为0.7以上的赛隆粉末，各定形，烧成该混合物。

    LIGHT EMITTING MODULE AND LAMP UNIT
    8.
    发明申请
    LIGHT EMITTING MODULE AND LAMP UNIT 审中-公开
    发光模块和灯泡单元

    公开(公告)号：US20120008306A1

    公开(公告)日：2012-01-12

    申请号：US13256205

    申请日：2010-03-11

    申请人： Yasutaka Sasaki ,  Masanobu Mizuno ,  Yasuaki Tsutsumi ,  Shogo Sugimori ,  Kazuhiro Ito

    发明人： Yasutaka Sasaki ,  Masanobu Mizuno ,  Yasuaki Tsutsumi ,  Shogo Sugimori ,  Kazuhiro Ito

    IPC分类号： F21V9/16 ,  H01L33/50

    CPC分类号： H01L33/508 ,  F21S41/141 ,  F21Y2115/10 ,  H01L2924/0002 ,  H01L2933/0083 ,  H01L2933/0091 ,  H01L2924/00

    摘要： In a light emitting module 40, a semiconductor light emitting element 48 is configured by forming an electrode pattern to which a current for light emission is supplied on the light emitting surface 48a. A light wavelength conversion member 52 is formed to be transparent and to convert the wavelength of the light emitted by the semiconductor light emitting element 48 and to emit the light from the emitting surface 52a. In the light wavelength conversion member 52, a plurality of protruding portions 52b are provided on the emitting surface 52a at an arrangement interval smaller than the repeating pattern interval in the electrode pattern. Each of the plurality of protruding portions 52b is formed into a hemispherical shape. In addition, the plurality of protruding portions 52b are provided on the emitting surface 52a at an arrangement interval of 300 μm or less.

    摘要翻译： 在发光模块40中，半导体发光元件48通过在发光面48a上形成发光用的电流的电极图案而构成。 光波长转换构件52形成为透明的并且转换由半导体发光元件48发射的光的波长并且从发射表面52a发射光。 在光波长转换构件52中，多个突出部52b以比电极图案中的重复图案间隔小的布置间隔设置在发光面52a上。 多个突出部52b中的每一个形成为半球形。 此外，多个突出部52b以300μm以下的配置间隔设置在发光面52a上。

    Method of fabricating semiconductor interconnections
    9.
    发明授权
    Method of fabricating semiconductor interconnections 失效
    制造半导体互连的方法

    公开(公告)号：US07781339B2

    公开(公告)日：2010-08-24

    申请号：US11765006

    申请日：2007-06-19

    申请人： Takashi Onishi ,  Mikako Takeda ,  Masao Mizuno ,  Susumu Tsukimoto ,  Tatsuya Kabe ,  Toshifumi Morita ,  Miki Moriyama ,  Kazuhiro Ito ,  Masanori Murakami

    发明人： Takashi Onishi ,  Mikako Takeda ,  Masao Mizuno ,  Susumu Tsukimoto ,  Tatsuya Kabe ,  Toshifumi Morita ,  Miki Moriyama ,  Kazuhiro Ito ,  Masanori Murakami

    IPC分类号： H01L21/44 ,  H01L21/4763

    CPC分类号： H01L21/76843 ,  H01L21/76864 ,  H01L21/76867

    摘要： A method of fabricating semiconductor interconnections is provided which can form a Ti-rich layer as a barrier layer and which can embed pure Cu material as interconnection material into every corner of grooves provided in an insulating film even when the grooves have a narrow minimum width and are deep. The method may include the steps of forming one or more grooves in an insulating film on a semiconductor substrate, the recess having a minimum width of 0.15 μm or less and a ratio of a depth of the groove to the minimum width thereof (depth/minimum width) of 1 or more, forming a Cu alloy thin film containing 0.5 to 10 atomic % of Ti in the groove of the insulated film along a shape of the groove in a thickness of 10 to 50 nm, forming a pure Cu thin film in the groove with the Cu alloy thin film attached thereto, and annealing the substrate with the films at 350° C. or more to allow the Ti to be precipitated between the insulating film and the Cu alloy thin film.

    摘要翻译： 提供一种制造半导体互连的方法，其可以形成富Ti层作为阻挡层，并且即使当沟槽具有窄的最小宽度时，也可以将纯Cu材料作为互连材料嵌入设置在绝缘膜中的沟槽的每个角落，并且 很深 该方法可以包括以下步骤：在半导体衬底上的绝缘膜中形成一个或多个凹槽，凹槽具有0.15μm或更小的最小宽度以及凹槽的深度与其最小宽度的比（深度/最小值 宽度）为1以上，沿着形状为10〜50nm的槽的形状，在绝缘膜的槽内形成含有0.5〜10原子％的Ti的Cu合金薄膜，形成纯Cu薄膜 与Cu合金薄膜连接的槽，并使膜在350℃以上退火，使Ti在绝缘膜与Cu合金薄膜之间析出。

    PLASMA DISPLAY DEVICE AND DRIVING APPARATUS THEREOF
    10.
    发明申请
    PLASMA DISPLAY DEVICE AND DRIVING APPARATUS THEREOF 审中-公开
    等离子体显示装置及其驱动装置

    公开(公告)号：US20080224952A1

    公开(公告)日：2008-09-18

    申请号：US11969132

    申请日：2008-01-03

    申请人： Kazuhiro Ito ,  Tae-Wook Kim

    发明人： Kazuhiro Ito ,  Tae-Wook Kim

    IPC分类号： G09G3/28 ,  G09G5/00 ,  G09G3/10

    CPC分类号： G09G3/296 ,  G09G3/2927 ,  G09G2310/066

    摘要： A plasma display device, and a driving apparatus thereof, is provided, which includes: a plasma display panel for displaying an image, the plasma display panel including a plurality of discharge cells and a plurality of electrodes corresponding to the discharge cells; and an electrode driver for applying a driving voltage to the plurality of electrodes, wherein the electrode driver includes: a first switch coupled between the plurality of electrodes and a first power supply for supplying a sustain voltage to the plurality of electrodes in a sustain period, a second switch having a first terminal and a second terminal, the first terminal coupled to the first power supply, the second switch for gradually increasing a voltage of the second terminal to the sustain voltage.

    摘要翻译： 提供了一种等离子体显示装置及其驱动装置，其包括：用于显示图像的等离子体显示面板，等离子体显示面板包括多个放电单元和与放电单元对应的多个电极; 以及用于向多个电极施加驱动电压的电极驱动器，其中所述电极驱动器包括：耦合在所述多个电极之间的第一开关和用于在维持周期中向所述多个电极提供维持电压的第一电源， 具有第一端子和第二端子的第二开关，所述第一端子耦合到所述第一电源，所述第二开关用于逐渐将所述第二端子的电压升高到所述维持电压。