Atomic layer deposition of metal oxides for memory applications
    5.
    发明授权
    Atomic layer deposition of metal oxides for memory applications 有权
    用于记忆应用的金属氧化物的原子层沉积

    公开(公告)号:US08846443B2

    公开(公告)日:2014-09-30

    申请号:US13198837

    申请日:2011-08-05

    摘要: Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack which contains at least one hard metal oxide film (e.g., metal is completely oxidized or substantially oxidized) and at least one soft metal oxide film (e.g., metal is less oxidized than hard metal oxide). The soft metal oxide film is less electrically resistive than the hard metal oxide film since the soft metal oxide film is less oxidized or more metallic than the hard metal oxide film. In one example, the hard metal oxide film is formed by an ALD process utilizing ozone as the oxidizing agent while the soft metal oxide film is formed by another ALD process utilizing water vapor as the oxidizing agent.

    摘要翻译: 本发明的实施例一般涉及用于制造这种存储器件的非易失性存储器件和方法。 用于形成改进的存储器件(例如ReRAM单元)的方法提供优化的原子层沉积(ALD)工艺,用于形成金属氧化物膜堆叠,其包含至少一个硬金属氧化物膜(例如,金属被完全氧化或基本上被氧化 )和至少一种软金属氧化物膜(例如,金属比硬金属氧化物氧化较少)。 由于软金属氧化物膜比硬金属氧化物膜氧化得更少或更金属,所以软金属氧化物膜的电阻小于硬金属氧化物膜。 在一个实例中,通过利用臭氧作为氧化剂的ALD工艺形成硬质金属氧化物膜,而通过利用水蒸汽作为氧化剂的另一ALD工艺形成软金属氧化物膜。

    ATOMIC LAYER DEPOSITION OF METAL OXIDES FOR MEMORY APPLICATIONS
    6.
    发明申请
    ATOMIC LAYER DEPOSITION OF METAL OXIDES FOR MEMORY APPLICATIONS 有权
    原子层沉积金属氧化物存储器应用

    公开(公告)号:US20130034947A1

    公开(公告)日:2013-02-07

    申请号:US13198837

    申请日:2011-08-05

    IPC分类号: H01L21/20 B82Y40/00

    摘要: Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack which contains at least one hard metal oxide film (e.g., metal is completely oxidized or substantially oxidized) and at least one soft metal oxide film (e.g., metal is less oxidized than hard metal oxide). The soft metal oxide film is less electrically resistive than the hard metal oxide film since the soft metal oxide film is less oxidized or more metallic than the hard metal oxide film. In one example, the hard metal oxide film is formed by an ALD process utilizing ozone as the oxidizing agent while the soft metal oxide film is formed by another ALD process utilizing water vapor as the oxidizing agent.

    摘要翻译: 本发明的实施例一般涉及用于制造这种存储器件的非易失性存储器件和方法。 用于形成改进的存储器件(例如ReRAM单元)的方法提供优化的原子层沉积(ALD)工艺,用于形成金属氧化物膜堆叠,其含有至少一个硬金属氧化物膜(例如,金属被完全氧化或基本上被氧化 )和至少一种软金属氧化物膜(例如,金属比硬金属氧化物氧化较少)。 由于软金属氧化物膜比硬金属氧化物膜氧化得更少或更金属,所以软金属氧化物膜的电阻小于硬金属氧化物膜。 在一个实例中,通过利用臭氧作为氧化剂的ALD工艺形成硬质金属氧化物膜,而通过利用水蒸汽作为氧化剂的另一ALD工艺形成软金属氧化物膜。

    Ultra low deposition rate PECVD silicon nitride
    9.
    发明授权
    Ultra low deposition rate PECVD silicon nitride 有权
    超低沉积速率PECVD氮化硅

    公开(公告)号:US06686232B1

    公开(公告)日:2004-02-03

    申请号:US10173717

    申请日:2002-06-19

    IPC分类号: H01L21471

    摘要: A thin silicon nitride layer is deposited at an ultra low deposition rate by PECVD by reducing the NH3 flow rate and/or reducing the SiH4 flow rate. Embodiments include depositing a thin layer of silicon nitride, e.g., 100 Å or less, on a thin silicon oxide liner over a gate electrode, at an NH3 flow rate of 100 to 800 sccm, a SiH4 flow rate of 50 to 100 sccm and a reduced pressure of 0.8 to 1.8 Torr. Embodiments of the present invention further include depositing the silicon nitride layer in multiple deposition stages, e.g., depositing the silicon nitride layer in five deposition stages of 20 Å each.

    摘要翻译: 通过减少NH 3流速和/或降低SiH 4流速,通过PECVD以超低沉积速率沉积薄的氮化硅层。 实施例包括在栅电极上的薄氧化硅衬垫上以100至800sccm的NH 3流速,50至100sccm的SiH 4流率和50至100sccm的SiH 4流速沉积例如100或更小的氮化硅薄层 0.8〜1.8乇减压。 本发明的实施例还包括在多个沉积阶段中沉积氮化硅层,例如,将氮化硅层沉积在各自的五个沉积阶段中。

    Modular optical printhead for hard copy printers
    10.
    发明授权
    Modular optical printhead for hard copy printers 失效
    用于硬拷贝打印机的模块化光学打印头

    公开(公告)号:US4875057A

    公开(公告)日:1989-10-17

    申请号:US239564

    申请日:1988-09-01

    IPC分类号: B41J2/45

    CPC分类号: B41J2/451

    摘要: Modular optical LED printhead arranged for a fixed focus distance outside the printhead structure. A supporting and registration plate contains a rectangular opening in which the lens is located. The plate is secured to the overall LED supporting structure of the printhead by end members which, with side members, completely seal the LED's and connections from contaminants. The registration plate has at least two surfaces thereon which mate with surfaces in the associated apparatus to accurately position the plate. During the alignment process of the printhead, the lens and plate are adjusted to provide a focus at a fixed distance from one of the registration surfaces of the plate. Alignment of the lens across the axis of the LED array is provided by recessed set screws and a shim. Because of the fixed distance from the registration surface, the printhead can be installed in suitably constructed apparatus without further alignment.

    摘要翻译: 模块化的光学LED打印头布置成在打印头结构之外的固定焦距。 支撑和配准板包含一个矩形开口,透镜位于其中。 该板通过端部构件固定到打印头的整个LED支撑结构,侧面构件完全将LED和连接件与污染物密封。 配准板具有至少两个表面,与其相关联的装置中的表面配合,以精确地定位该板。 在打印头的对准过程中,调整透镜和板以提供与板的一个对准表面固定距离的焦点。 通过凹入的固定螺钉和垫片提供透镜在LED阵列的轴线上的对准。 由于与配准表面的固定距离,打印头可以安装在适当构造的设备中,无需进一步对准。