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    Nonvolatile resistive memory element with a metal nitride containing switching layer
    5.
    发明授权
    Nonvolatile resistive memory element with a metal nitride containing switching layer 有权
    具有含有金属氮化物的开关层的非易失性电阻性存储元件

    公开(公告)号：US08853099B2

    公开(公告)日：2014-10-07

    申请号：US13328423

    申请日：2011-12-16

    申请人： Yun Wang ,  Tony P. Chiang ,  Imran Hashim ,  Tim Minvielle ,  Takeshi Yamaguchi

    发明人： Yun Wang ,  Tony P. Chiang ,  Imran Hashim ,  Tim Minvielle ,  Takeshi Yamaguchi

    IPC分类号： H01L21/31

    CPC分类号： H01L45/145 ,  B82Y10/00 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1608

    摘要： A nonvolatile resistive memory element has a novel variable resistance layer that includes a metal nitride, a metal oxide-nitride, a two-metal oxide-nitride, or a multilayer stack thereof. One method of forming the novel variable resistance layer comprises an interlayer deposition procedure, in which metal oxide layers are interspersed with metal nitride layers and then converted into a substantially homogeneous layer by an anneal process. Another method of forming the novel variable resistance layer comprises an intralayer deposition procedure, in which various ALD processes are sequentially interleaved to form a metal oxide-nitride layer. Alternatively, a metal oxide is deposited, nitridized, and annealed to form the variable resistance layer or a metal nitride is deposited, oxidized, and annealed to form the variable resistance layer.

    摘要翻译： 非易失性电阻存储元件具有新颖的可变电阻层，其包括金属氮化物，金属氧化物氮化物，二金属氧化物氮化物或其多层叠层。 形成新颖的可变电阻层的一种方法包括层间沉积程序，其中金属氧化物层散布有金属氮化物层，然后通过退火工艺转变成基本均匀的层。 形成新型可变电阻层的另一种方法包括层间沉积程序，其中各种ALD工艺顺序交错以形成金属氧化物 - 氮化物层。 或者，金属氧化物被沉积，氮化和退火以形成可变电阻层，或者金属氮化物被沉积，氧化和退火以形成可变电阻层。

    Nonvolatile memory device using a tunnel oxide layer and oxygen blocking layer as a current limiter element
    6.
    发明授权
    Nonvolatile memory device using a tunnel oxide layer and oxygen blocking layer as a current limiter element 有权
    使用隧道氧化物层和氧阻挡层作为限流元件的非易失性存储器件

    公开(公告)号：US09299926B2

    公开(公告)日：2016-03-29

    申请号：US13399728

    申请日：2012-02-17

    申请人： Mihir Tendulkar ,  Imran Hashim ,  Yun Wang ,  Tim Minvielle ,  Takeshi Yamaguchi

    发明人： Mihir Tendulkar ,  Imran Hashim ,  Yun Wang ,  Tim Minvielle ,  Takeshi Yamaguchi

    IPC分类号： H01L21/02 ,  H01L45/00

    CPC分类号： H01L45/08 ,  G11C2213/51 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/146 ,  H01L45/16

    摘要： Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element with improved device switching performance and lifetime, due to the addition of a current limiting component. In one embodiment, the current limiting component comprises a resistive material configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide layer that is a current limiting material and an oxygen barrier layer that is an oxygen deficient material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.

    摘要翻译： 本发明的实施例包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。 在一个实施例中，限流部件包括被配置为改善电阻式开关存储器元件的开关性能和寿命的电阻材料。 电流限制层的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件中存在的电阻式开关存储器元件中增加固定串联电阻来降低通过可变电阻层的电流。 在一个实施例中，限流部件包括作为限流材料的隧道氧化物层和作为设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的缺氧材料的氧阻挡层。

    Embedded nonvolatile memory elements having resistive switching characteristics
    7.
    发明授权
    Embedded nonvolatile memory elements having resistive switching characteristics 有权
    具有电阻开关特性的嵌入式非易失性存储元件

    公开(公告)号：US09129894B2

    公开(公告)日：2015-09-08

    申请号：US13621371

    申请日：2012-09-17

    申请人： Imran Hashim ,  Tony Chiang ,  Vidyut Gopal ,  Yun Wang

    发明人： Imran Hashim ,  Tony Chiang ,  Vidyut Gopal ,  Yun Wang

    IPC分类号： G11C11/21 ,  H01L27/24 ,  G11C13/00 ,  H01L45/00

    CPC分类号： H01L45/1608 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2213/32 ,  G11C2213/51 ,  G11C2213/52 ,  G11C2213/74 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

    摘要： Provided are nonvolatile memory assemblies each including a resistive switching layer and current steering element. The steering element may be a transistor connected in series with the switching layer. Resistance control provided by the steering element allows using switching layers requiring low switching voltages and currents. Memory assemblies including such switching layers are easier to embed into integrated circuit chips having other low voltage components, such as logic and digital signal processing components, than, for example, flash memory requiring much higher switching voltages. In some embodiments, provided nonvolatile memory assemblies operate at switching voltages less than about 3.0V and corresponding currents less than 50 microamperes. A memory element may include a metal rich hafnium oxide disposed between a titanium nitride electrode and doped polysilicon electrode. One electrode may be connected to a drain or source of the transistor, while another electrode is connected to a signal line.

    摘要翻译： 提供了各自包括电阻式开关层和电流控制元件的非易失性存储器组件。 转向元件可以是与开关层串联连接的晶体管。 由转向元件提供的电阻控制允许使用需要低开关电压和电流的开关层。 包括这种开关层的存储器组件比例如需要高得多的开关电压的闪速存储器更容易嵌入到具有其它低电压组件（例如逻辑和数字信号处理组件）的集成电路芯片中。 在一些实施例中，所提供的非易失性存储器组件在小于约3.0V的开关电压和小于50微安的相应电流下工作。 存储元件可以包括设置在氮化钛电极和掺杂多晶硅电极之间的富含金属的氧化铪。 一个电极可以连接到晶体管的漏极或源极，而另一个电极连接到信号线。