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    HYDROGEN PRODUCTION APPARATUS, HYDROGEN PRODUCTION METHOD, SILICON FINE PARTICLES FOR HYDROGEN PRODUCTION, AND PRODUCTION METHOD FOR SILICON FINE PARTICLES FOR HYDROGEN PRODUCTION
    1.
    发明申请
    HYDROGEN PRODUCTION APPARATUS, HYDROGEN PRODUCTION METHOD, SILICON FINE PARTICLES FOR HYDROGEN PRODUCTION, AND PRODUCTION METHOD FOR SILICON FINE PARTICLES FOR HYDROGEN PRODUCTION 审中-公开
    氢生产装置​​，氢生产方法，用于氢生产的硅精细颗粒和用于氢生产的硅精细颗粒的生产方法

    公开(公告)号：US20160200571A1

    公开(公告)日：2016-07-14

    申请号：US14916650

    申请日：2014-08-26

    申请人： Hikaru KOBAYASHI ,  KIT CO, LTD. ,  NISSHIN KASEI CO., LTD.

    发明人： Hikaru KOBAYASHI ,  Toru HIGO ,  Yayoi KANATANI

    IPC分类号： C01B3/06 ,  C01B33/021 ,  B01J8/02

    CPC分类号： C01B3/06 ,  B01J7/02 ,  B01J8/02 ,  B01J8/20 ,  B01J2208/00592 ,  B01J2208/024 ,  C01B33/021 ,  Y02E60/36

    摘要： An exemplary hydrogen production apparatus 100 according to the present invention includes a grinding unit 10 configured to grind a silicon chip or a silicon grinding scrap 1 to form silicon fine particles 2, and a hydrogen generator 70 configured to generate hydrogen by causing the silicon fine particles 2 to contact with as well as disperse in, or to contact with or dispersed in water or an aqueous solution. The hydrogen production apparatus 100 can achieve reliable production of a practically adequate amount of hydrogen from a start material of silicon chips or silicon grinding scraps that are ordinarily regarded as waste. The hydrogen production apparatus thus effectively utilizes the silicon chips or the silicon grinding scraps so as to contribute to environmental protection as well as to significant reduction in cost for production of hydrogen that is utilized as an energy source in the next generation.

    摘要翻译： 根据本发明的示例性氢制造装置100包括：研磨单元10，被配置为研磨硅芯片或硅研磨碎片1以形成硅微粒2;以及氢生成器70，其被配置为通过使硅微粒引起 2接触并分散在水中或与水或水溶液接触或分散在水中。 氢气制造装置100可以从通常被认为是废弃物的硅芯片或硅研磨废料的起始材料实现可靠地生产实际上足够量的氢。 因此，氢制造装置有效地利用硅片或硅研磨废料，以有助于环境保护，并且显着降低用于下一代作为能源的氢的生产成本。

    SOLID PREPARATION, METHOD FOR PRODUCING SOLID PREPARATION, AND METHOD FOR GENERATING HYDROGEN
    2.
    发明申请
    SOLID PREPARATION, METHOD FOR PRODUCING SOLID PREPARATION, AND METHOD FOR GENERATING HYDROGEN 审中-公开

    公开(公告)号：US20190038664A1

    公开(公告)日：2019-02-07

    申请号：US16073305

    申请日：2017-01-12

    申请人： Hikaru Kobayashi ,  KIT Co. Ltd. ,  NISSHIN KASEI CO., LTD.

    发明人： Hikaru KOBAYASHI ,  Yuki KOBAYASHI

    IPC分类号： A61K33/00 ,  A61K9/16 ,  A61K9/20 ,  A61K9/48 ,  A61P39/06

    摘要： One solid preparation of the present invention mainly includes silicon fine particles, and has a capability of generating hydrogen. In addition, one specific example of the solid preparation mainly includes silicon fine particles having a crystallite diameter principally of 1 nm or more and 100 nm or less, and exhibits a capability of generating hydrogen in an amount of 3 ml/g or more when brought into contact with a water-containing liquid having a pH value of 7 or more. In this solid preparation, hydrogen is generated when the silicon fine particles are brought into contact with a water-containing liquid having a pH value of 7 or more. Therefore, taking advantage of the characteristics of the solid preparation, generation of hydrogen is promoted in, for example, a gastrointestinal tract where the pH value is 7 or more due to secretion of pancreatic fluid after passage through the stomach after oral ingestion.

    THIN FILM TRANSISTOR, METHOD OF MANUFACTURING SAME, DISPLAY DEVICE, METHOD OF MODIFYING AN OXIDE FILM, METHOD OF FORMING AN OXIDE FILM, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE
    8.
    发明申请
    THIN FILM TRANSISTOR, METHOD OF MANUFACTURING SAME, DISPLAY DEVICE, METHOD OF MODIFYING AN OXIDE FILM, METHOD OF FORMING AN OXIDE FILM, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    薄膜晶体管，其制造方法，显示装置，氧化膜的修饰方法，形成氧化膜的方法，半导体器件，制造半导体器件的方法以及制造半导体器件的装置

    公开(公告)号：US20090137131A1

    公开(公告)日：2009-05-28

    申请号：US12336761

    申请日：2008-12-17

    申请人： Shigeki IMAI ,  Kazuhiko INOGUCHI ,  Hikaru KOBAYASHI

    发明人： Shigeki IMAI ,  Kazuhiko INOGUCHI ,  Hikaru KOBAYASHI

    IPC分类号： H01L21/31

    CPC分类号： H01L21/31695 ,  H01L21/0214 ,  H01L21/02203 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/31654 ,  H01L21/32105 ,  H01L29/4908 ,  H01L29/66757

    摘要： In a manufacturing method of a thin film transistor (1), the oxide film forming step is performed whereby: a process-target substrate (2) having a surface on which a gate oxide film (4) should be formed is immersed in an oxidizing solution containing an active oxidizing species; and a gate oxide film (4) is formed through direct oxidation of polycrystalline silicon (51) on the process-target substrate (2). With this step, a silicon dioxide film (42) is formed while growing a silicon dioxide film (41) on the process-target substrate 2. Accordingly, the interface between the polycrystalline silicon (51) and the gate oxide film (4) is kept clean. The gate oxide film (4) is uniformly formed with excellent quality in insulation tolerance and other properties. Therefore, the thin film transistor (1) contains a high quality oxide film with excellent insulation tolerance and other properties which can be formed at low temperature.

    摘要翻译： 在薄膜晶体管（1）的制造方法中，进行氧化膜形成工序，由此将具有要形成有栅极氧化膜（4）的表面的工序对象基板（2）浸渍在氧化膜 含有活性氧化物质的溶液; 通过在工艺靶基板（2）上直接氧化多晶硅（51）形成栅极氧化膜（4）。 通过该步骤，在处理对象基板2上生长二氧化硅膜（41）的同时形成二氧化硅膜（42）。因此，多晶硅（51）与栅氧化膜（4）的界面为 保持清洁 栅极氧化膜（4）均匀地形成，具有优良的绝缘耐受性等特性。 因此，薄膜晶体管（1）含有能够在低温下形成的优异的绝缘耐受性等特性的高品质氧化膜。